NCP81111MNI2TXG [ONSEMI]

3 相 VR12.5-6 高速数字控制器,带 SVID 和 I2C 接口;
NCP81111MNI2TXG
型号: NCP81111MNI2TXG
厂家: ONSEMI    ONSEMI
描述:

3 相 VR12.5-6 高速数字控制器,带 SVID 和 I2C 接口

控制器 小信号双极晶体管
文件: 总3页 (文件大小:29K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
January 2005  
BC517  
NPN Darlington Transistor  
This device is designed for applications requiring extremely high current gain at currents to 1.0A.  
Sourced from process 05.  
TO-92  
1
1. Collector 2. Base 3. Emitter  
Absolute Maximum Ratings *  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
30  
Units  
V
V
V
Collector-Emitter Voltage  
V
V
CEO  
CBO  
EBO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
10  
V
I
- Continuous  
1.2  
A
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ 150  
°C  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Conditions  
Min.  
Max  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 2.0mA, I = 0  
30  
40  
10  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= 10µA, I = 0  
E
= 100nA, I = 0  
V
C
I
V
= 30V, I = 0  
100  
nA  
CB  
E
On Characteristics *  
h
DC Current Gain  
V
= 2.0V, I = 20mA  
30,000  
FE  
CE  
C
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
= 100mA, I = 0.1mA  
1
V
V
CE(sat)  
BE(on)  
C
C
B
= 10mA, V = 5.0V  
1.4  
CE  
Thermal Characteristics  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
P
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
θJC  
θJA  
©2005 Fairchild Semiconductor Corporation  
BC517 Rev. A  
1
www.fairchildsemi.com  
Mechanical Dimensions  
TO-92  
+0.25  
–0.15  
4.58  
0.46 ±0.10  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
0.38  
[1.27 ±0.20  
]
[1.27 ±0.20]  
3.60 ±0.20  
(R2.29)  
Dimensions in Millimeters  
2
www.fairchildsemi.com  
BC517 Rev. A  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
POP™  
SPM™  
Stealth™  
IntelliMAX™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
MSXPro™  
OCX™  
OCXPro™  
OPTOLOGIC  
OPTOPLANAR™  
PACMAN™  
FAST  
FASTr™  
FPS™  
FRFET™  
GlobalOptoisolator™  
GTO™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
FACT™  
Power247™  
PowerEdge™  
PowerSaver™  
PowerTrench  
QFET  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
QS™  
HiSeC™  
I2C™  
QT Optoelectronics™ TinyLogic  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
TINYOPTO™  
TruTranslation™  
UHC™  
i-Lo™  
ImpliedDisconnect™  
FACT Quiet Series™  
UltraFET  
Across the board. Around the world.™  
The Power Franchise  
ProgrammableActive Droop™  
SILENT SWITCHER UniFET™  
SMART START™  
VCX™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY  
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY  
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT  
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I15  

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