NCS20071 [ONSEMI]

Rail-to-Rail Output, BW Operational Amplifier;
NCS20071
型号: NCS20071
厂家: ONSEMI    ONSEMI
描述:

Rail-to-Rail Output, BW Operational Amplifier

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中文:  中文翻译
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NCS20071, NCS20072,  
NCS20074  
Rail-to-Rail Output, 3 MHz  
BW Operational Amplifier  
The NCS2007 series operational amplifiers provide rail−to−rail  
output operation, 3 MHz bandwidth, and are available in single, dual,  
and quad configurations. Rail−to−rail operation enables the user to  
make optimal use of the entire supply voltage range while taking  
advantage of 3 MHz bandwidth. The NCS2007 can operate on supply  
voltages as low as 2.7 V over the temperature range of −40°C to  
125°C. At a 2.7 V supply, the high bandwidth provides a slew rate of  
2.8 V/ms while only consuming 405 mA of quiescent current per  
channel. The wide supply range allows the NCS2007 to run on supply  
voltages as high as 36 V, making it ideal for a broad range of  
applications. Since this is a CMOS device, high input impedance and  
low bias currents make it ideal for interfacing to a wide variety of  
signal sensors. The NCS2007 devices are available in a variety of  
compact packages.  
http://onsemi.com  
5
1
SOT−553  
TSOP−5  
CASE 463B  
CASE 483  
8
1
Micro8]  
SOIC−8  
CASE 751  
Features  
CASE 846AH  
Rail−To−Rail Output  
Wide Supply Range: 2.7 V to 36 V  
8
Wide Bandwidth: 3 MHz typical at V = 2.7 V  
S
1
High Slew Rate: 2.8 V/ms typical at V = 2.7 V  
S
Low Supply Current: 405 mA per channel at V = 2.7 V  
S
TSSOP−8  
CASE 948S  
UDFN8  
CASE 517AC  
Low Input Bias Current: 5 pA typical  
Wide Temperature Range: −40°C to 125°C  
Available in a variety of packages  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
14  
14  
1
1
TSSOP−14  
CASE 948G  
SOIC−14 NB  
CASE 751A  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Applications  
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 2 of this data sheet.  
Current Sensing  
Signal Conditioning  
Automotive  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 4 of  
this data sheet.  
End Products  
Notebook Computers  
Portable Instruments  
Power Supplies  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
July, 2014 − Rev. 1  
NCS20071/D  
NCS20071, NCS20072, NCS20074  
Single Channel Configuration  
NCS20071, NCV20071  
5
ADYAYWG  
XXMG  
G
G
1
SOT−553  
TSOP−5  
CASE 463B  
CASE 483  
Dual Channel Configuration  
NCS20072, NCV20072  
8
1
XXX  
YWW  
A G  
1
XXXXXX  
AYWW  
XXX  
YMD  
XX MG  
G
G
G
Micro8]  
SOIC−8  
CASE 751  
TSSOP−8  
CASE 948S  
UDFN8  
CASE 517AC  
CASE 846AH  
Quad Channel Configuration  
NCS20074, NCV20074  
14  
14  
XXXX  
XXXX  
ALYW  
XXXXX  
AWLYWW  
1
1
TSSOP−14  
CASE 948G  
SOIC−14 NB  
CASE 751A  
X
A, R  
Y
= Specific Device Code  
= Assembly Location  
= Year  
WW, W = Work Week  
G or G = Pb−Free Package  
Figure 1. Marking Diagrams  
http://onsemi.com  
2
NCS20071, NCS20072, NCS20074  
Single Channel Configuration  
NCS20071, NCV20071  
IN+  
OUT  
VSS  
1
2
3
5
4
VDD  
IN−  
1
2
3
5
4
VDD  
OUT  
+
VSS  
IN+  
IN−  
SOT23−5  
(TSOP−5)  
SOT553−5  
Quadruple Channel Configuration  
NCS20074, NCV20074  
Dual Channel Configuration  
NCS20072, NCV20072  
OUT 1  
IN− 1  
IN+ 1  
VDD  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
OUT 4  
IN− 4  
IN+ 4  
VSS  
OUT 1  
1
8
+
+
VDD  
2
3
4
7
6
5
OUT 2  
IN− 1  
IN+ 1  
VSS  
+
IN− 2  
IN+ 2  
IN+ 3  
IN− 3  
OUT 3  
IN+ 2  
IN− 2  
+
+
+
OUT 2  
8
Figure 2. Pin Connections  
http://onsemi.com  
3
NCS20071, NCS20072, NCS20074  
ORDERING INFORMATION  
Device  
Configuration  
Automotive  
Marking  
Package  
Shipping  
NCS20071SN2T1G*  
*
SOT23−5  
(TSOP−5)  
(Pb−Free)  
3000 / Tape and Reel  
No  
NCS20071*  
*
*
SOT553−5  
(Pb−Free)  
4000 / Tape and Reel  
3000 / Tape and Reel  
Single  
NCV20071SN2T1G*  
SOT23−5  
(TSOP−5)  
(Pb−Free)  
Yes  
NCV20071*  
*
SOT553−5  
(Pb−Free)  
4000 / Tape and Reel  
4000 / Tape and Reel  
2500 / Tape and Reel  
3000 / Tape and Reel  
3000 / Tape and Reel  
4000 / Tape and Reel  
2500 / Tape and Reel  
3000 / Tape and Reel  
3000 / Tape and Reel  
2500 / Tape and Reel  
2500 / Tape and Reel  
2500 / Tape and Reel  
2500 / Tape and Reel  
NCS20072DMR2G*  
NCS20072DR2G*  
NCS20072DTBR2G*  
NCS20072*  
*
Micro8 (MSOP8)  
(Pb−Free)  
*
SOIC−8  
(Pb−Free)  
No  
*
TSSOP−8  
(Pb−Free)  
*
UDFN8  
(Pb−Free)  
Dual  
NCV20072DMR2G*  
NCV20072DR2G*  
NCV20072DTBR2G*  
NCV20072*  
*
Micro8 (MSOP8)  
(Pb−Free)  
*
SOIC−8  
(Pb−Free)  
Yes  
*
TSSOP−8  
(Pb−Free)  
*
UDFN8  
(Pb−Free)  
NCS20074DR2G  
NCS20074DTBR2G  
NCV20074DR2G  
NCV20074DTBR2G  
NCS20074  
SOIC−14  
(Pb−Free)  
No  
NCS2  
0074  
TSSOP−14  
(Pb−Free)  
Quad  
NCS20074  
SOIC−14  
(Pb−Free)  
Yes  
NCS2  
0074  
TSSOP−14  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*Contact local sales office for more information  
http://onsemi.com  
4
NCS20071, NCS20072, NCS20074  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
Rating  
Symbol  
Limit  
Unit  
V
Supply Voltage (V – V ) (Note 2)  
V
S
40  
DD  
SS  
Input Voltage  
V
I
V
SS  
− 0.2 to V + 0.2  
V
DD  
Differential Input Voltage  
Maximum Input Current  
V
V
V
ID  
s
I
10  
100  
mA  
mA  
mW  
°C  
°C  
°C  
V
I
Maximum Output Current  
I
O
Continuous Total Power Dissipation (Note 2)  
Maximum Junction Temperature  
P
200  
D
T
150  
J
Storage Temperature Range  
T
STG  
−65 to 150  
260  
Mounting Temperature (Infrared or Convection – 20 sec)  
T
mount  
ESD Capability (Note 3)  
Human Body Model  
Machine Model  
ESD  
ESD  
2000  
150  
HBM  
MM  
Charged Device Model  
ESD  
1000 (C6)  
CDM  
Latch−Up Current (Note 3)  
I
LU  
100  
mA  
Moisture Sensitivity Level (Note 3)  
MSL  
Level 1  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.  
2. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction  
temperature of 150°C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability.  
Shorting output to either VDD or VSS will adversely affect reliability.  
3. This device series incorporates ESD protection and is tested by the following methods:  
ESD Human Body Model tested per ANSI/ANSI/ESDA/JEDEC JS-001−2010 (AEC−Q100−002)  
ESD Machine Model tested per JESD22−A115 (AEC−Q100−003)  
ESD Charged Device Model tested per ANSI/ESD S5.3.1−2009 (AEC−Q100−011)  
4. Latch−up Current tested per JEDEC standard: JESD78 (AEC−Q100−004)  
5. Moisture Sensitivity Level tested per IPC/JEDEC standard: J−STD−020A  
THERMAL INFORMATION  
Parameter  
Symbol  
Package  
SOT23−5/ TSOP5  
SOT553−5  
Micro8/MSOP8  
SOIC−8  
Value  
235  
250  
238  
190  
140  
350  
156  
190  
Unit  
Junction−to−Ambient  
q
°C/W  
JA  
TSSOP−8  
UDFN−8  
SOIC−14  
TSSOP−14  
OPERATING RANGES  
Parameter  
Symbol  
Min  
Max  
36  
Unit  
V
Operating Supply Voltage  
Differential Input Voltage  
V
S
2.7  
V
ID  
V
S
V
Input Common Mode Range  
Ambient Temperature  
V
V
V − 1.35  
DD  
V
ICM  
SS  
T
−40  
125  
°C  
A
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
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5
 
NCS20071, NCS20072, NCS20074  
ELECTRICAL CHARACTERISTICS AT VS = 2.7 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 6, 7)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
1.3  
3
mV  
mV  
mV/°C  
pA  
Input Offset Voltage  
Offset Voltage Drift  
V
OS  
+4  
DV /DT  
T = 25°C to 125°C  
2
5
OS  
A
200  
1500  
75  
Input Bias Current  
Input Offset Current  
I
IB  
Note 7  
pA  
2
pA  
I
Note 7  
DC  
OS  
175  
pA  
Channel Separation  
XTLK  
115  
50  
dB  
Differential Input Resistance  
Common Mode Input Resistance  
Differential Input Capacitance  
Common Mode Input Capacitance  
R
R
C
GW  
GW  
pF  
ID  
IN  
ID  
5
1.5  
3.5  
110  
C
pF  
CM  
90  
Common Mode Rejection Ratio  
CMRR  
V
CM  
= 0 V to V − 1.35 V  
dB  
DD  
69  
OUTPUT CHARACTERISTICS  
96  
118  
Open Loop Voltage Gain  
Output Current Capability  
Output Voltage High  
A
dB  
mA  
V
VOL  
86  
Op amp sinking current  
70  
50  
I
O
Op amp sourcing current  
0.006  
0.15  
0.22  
0.15  
0.22  
V
Voltage output swing from positive rail  
OH  
0.005  
Output Voltage Low  
V
Voltage output swing from negative rail  
V
OL  
AC CHARACTERISTICS  
Unity Gain Bandwidth  
Slew Rate at Unity Gain  
Phase Margin  
UGBW  
SR  
C = 25 pF  
3
MHz  
V/ms  
°
L
C = 20 pF  
L
2.8  
50  
ö
m
C = 25 pF  
L
Gain Margin  
A
m
C = 25 pF  
L
14  
dB  
Settling time to 0.1%  
Settling time to 0.01%  
0.6  
1.2  
V
= 1 Vpp,  
O
Settling Time  
t
S
ms  
Gain = 1, C = 20 pF  
L
NOISE CHARACTERISTICS  
Total Harmonic Distortion plus Noise  
THD+N  
V
= 0.5 Vpp, f = 1 kHz, Av = 1  
0.05  
30  
%
IN  
f = 1 kHz  
f = 10 kHz  
f = 1 kHz  
Input Referred Voltage Noise  
Input Referred Current Noise  
e
n
nV/Hz  
fA/Hz  
20  
i
n
0.25  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
6. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
http://onsemi.com  
6
NCS20071, NCS20072, NCS20074  
ELECTRICAL CHARACTERISTICS AT VS = 2.7 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 6, 7)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
135  
405  
Max  
Unit  
SUPPLY CHARACTERISTICS  
114  
Power Supply Rejection Ratio  
PSRR  
No Load  
dB  
100  
525  
Power Supply Quiescent Current  
I
Per channel, no load  
mA  
DD  
625  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
6. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
ELECTRICAL CHARACTERISTICS AT VS = 5 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 8, 9)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
1.3  
3
mV  
mV  
mV/°C  
pA  
Input Offset Voltage  
Offset Voltage Drift  
V
OS  
+4  
DV /DT  
T = 25°C to 125 °C  
2
5
OS  
A
200  
1500  
75  
Input Bias Current  
Input Offset Current  
I
IB  
Note 9  
pA  
2
pA  
I
Note 9  
DC  
OS  
175  
pA  
Channel Separation  
XTLK  
115  
50  
dB  
Differential Input Resistance  
Common Mode Input Resistance  
Differential Input Capacitance  
Common Mode Input Capacitance  
R
R
C
GW  
GW  
pF  
ID  
IN  
ID  
5
1.5  
3.5  
125  
C
pF  
CM  
105  
80  
Common Mode Rejection Ratio  
CMRR  
V
= 0 V to V − 1.35 V  
dB  
CM  
DD  
OUTPUT CHARACTERISTICS  
96  
120  
Open Loop Voltage Gain  
Output Current Capability  
Output Voltage High  
A
dB  
mA  
V
VOL  
86  
Op amp sinking current  
50  
60  
I
O
Op amp sourcing current  
0.013  
0.20  
0.25  
0.10  
0.15  
V
Voltage output swing from positive rail  
OH  
0.01  
Output Voltage Low  
V
Voltage output swing from negative rail  
V
OL  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
8. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
9. Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
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7
 
NCS20071, NCS20072, NCS20074  
ELECTRICAL CHARACTERISTICS AT VS = 5 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 8, 9)  
A
Parameter  
AC CHARACTERISTICS  
Unity Gain Bandwidth  
Slew Rate at Unity Gain  
Phase Margin  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
UGBW  
SR  
C = 25 pF  
L
3.2  
2.7  
50  
MHz  
V/ms  
°
C = 20 pF  
L
ö
m
C = 25 pF  
L
Gain Margin  
A
m
C = 25 pF  
L
14  
dB  
Settling time to 0.1%  
Settling time to 0.01%  
1.2  
5.6  
V
= 3 Vpp,  
O
Settling Time  
t
S
ms  
Gain = 1, C = 20 pF  
L
NOISE CHARACTERISTICS  
Total Harmonic Distortion plus Noise  
THD+N  
V
IN  
= 2.5 Vpp, f = 1 kHz, Av = 1  
0.009  
30  
%
f = 1 kHz  
f = 10 kHz  
f = 1 kHz  
Input Referred Voltage Noise  
e
n
nV/Hz  
fA/Hz  
20  
Input Referred Current Noise  
i
n
0.25  
SUPPLY CHARACTERISTICS  
114  
135  
410  
Power Supply Rejection Ratio  
PSRR  
No Load  
dB  
100  
530  
Power Supply Quiescent Current  
I
Per channel, no load  
mA  
DD  
630  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
8. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
9. Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
ELECTRICAL CHARACTERISTICS AT VS = 10 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 10, 11)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
1.3  
3
mV  
mV  
mV/°C  
pA  
Input Offset Voltage  
Offset Voltage Drift  
V
OS  
+4  
DV /DT  
T = 25°C to 125°C  
2
5
OS  
A
200  
1500  
75  
Input Bias Current  
Input Offset Current  
I
IB  
Note 11  
pA  
2
pA  
I
Note 11  
DC  
OS  
175  
pA  
Channel Separation  
XTLK  
115  
50  
5
dB  
Differential Input Resistance  
Common Mode Input Resistance  
Differential Input Capacitance  
Common Mode Input Capacitance  
R
R
C
GW  
GW  
pF  
ID  
IN  
ID  
1.5  
3.5  
C
pF  
CM  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
10.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
11. Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
http://onsemi.com  
8
 
NCS20071, NCS20072, NCS20074  
ELECTRICAL CHARACTERISTICS AT VS = 10 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 10, 11)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
110  
130  
Common Mode Rejection Ratio  
CMRR  
V
CM  
= 0 V to V − 1.35 V  
dB  
DD  
87  
OUTPUT CHARACTERISTICS  
98  
120  
Open Loop Voltage Gain  
Output Current Capability  
Output Voltage High  
A
dB  
mA  
V
VOL  
88  
Op amp sinking current  
50  
65  
I
O
Op amp sourcing current  
0.023  
0.08  
0.10  
0.3  
V
Voltage output swing from positive rail  
OH  
0.022  
Output Voltage Low  
V
OL  
Voltage output swing from negative rail  
V
0.35  
AC CHARACTERISTICS  
Unity Gain Bandwidth  
Slew Rate at Unity Gain  
Phase Margin  
UGBW  
SR  
C = 25 pF  
3.2  
2.2  
50  
MHz  
V/ms  
°
L
C = 20 pF  
L
ö
m
C = 25 pF  
L
Gain Margin  
A
m
C = 25 pF  
L
14  
dB  
Settling time to 0.1%  
Settling time to 0.01%  
3.4  
6.8  
V
= 8.5 Vpp,  
O
Settling Time  
t
S
ms  
Gain = 1, C = 20 pF  
L
NOISE CHARACTERISTICS  
Total Harmonic Distortion plus Noise  
THD+N  
V
IN  
= 7.5 Vpp, f = 1 kHz, Av = 1  
0.004  
30  
%
f = 1 kHz  
f = 10 kHz  
f = 1 kHz  
Input Referred Voltage Noise  
e
n
nV/Hz  
fA/Hz  
20  
Input Referred Current Noise  
i
n
0.25  
SUPPLY CHARACTERISTICS  
114  
135  
416  
Power Supply Rejection Ratio  
PSRR  
No Load  
dB  
100  
540  
Power Supply Quiescent Current  
I
Per channel, no load  
mA  
DD  
640  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
10.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
11. Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
http://onsemi.com  
9
 
NCS20071, NCS20072, NCS20074  
ELECTRICAL CHARACTERISTICS AT VS = 36 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 12, 13)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
1.3  
3
mV  
mV  
mV/°C  
pA  
Input Offset Voltage  
Offset Voltage Drift  
V
OS  
+4  
DV /DT  
T = 25°C to 125°C  
2
5
OS  
A
200  
1500  
75  
Input Bias Current  
Input Offset Current  
I
IB  
Note 13  
pA  
2
pA  
I
Note 13  
DC  
OS  
175  
pA  
Channel Separation  
XTLK  
115  
50  
dB  
Differential Input Resistance  
Common Mode Input Resistance  
Differential Input Capacitance  
Common Mode Input Capacitance  
R
R
C
GW  
GW  
pF  
ID  
IN  
ID  
5
1.5  
3.5  
145  
C
pF  
CM  
120  
Common Mode Rejection Ratio  
CMRR  
V
CM  
= 0 V to V − 1.35 V  
dB  
DD  
95  
OUTPUT CHARACTERISTICS  
98  
120  
Open Loop Voltage Gain  
Output Current Capability  
Output Voltage High  
A
dB  
mA  
V
VOL  
88  
Op amp sinking current  
50  
65  
I
O
Op amp sourcing current  
0.074  
0.10  
0.12  
0.3  
V
Voltage output swing from positive rail  
OH  
0.065  
Output Voltage Low  
V
OL  
Voltage output swing from negative rail  
V
0.35  
AC CHARACTERISTICS  
Unity Gain Bandwidth  
Slew Rate at Unity Gain  
Phase Margin  
UGBW  
SR  
C = 25 pF  
3.2  
2.4  
50  
MHz  
V/ms  
°
L
C = 20 pF  
L
ö
m
C = 25 pF  
L
Gain Margin  
A
m
C = 25 pF  
L
14  
dB  
Settling time to 0.1%  
Settling time to 0.01%  
3.2  
6.8  
V
= 10 Vpp,  
O
Settling Time  
t
S
ms  
Gain = 1, C = 20 pF  
L
NOISE CHARACTERISTICS  
Total Harmonic Distortion plus Noise  
THD+N  
V
IN  
= 28.5 Vpp, f = 1 kHz, Av = 1  
0.001  
30  
%
f = 1 kHz  
f = 10 kHz  
f = 1 kHz  
Input Referred Voltage Noise  
Input Referred Current Noise  
e
n
nV/Hz  
fA/Hz  
20  
i
n
0.25  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
12.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
13.Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
http://onsemi.com  
10  
NCS20071, NCS20072, NCS20074  
ELECTRICAL CHARACTERISTICS AT VS = 36 V  
T = 25°C; R 10 kW; V  
= V  
= mid−supply unless otherwise noted. All limits are guaranteed by testing or statistical analysis.  
A
L
CM  
OUT  
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Notes 12, 13)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
135  
465  
Max  
Unit  
SUPPLY CHARACTERISTICS  
114  
Power Supply Rejection Ratio  
PSRR  
No Load  
dB  
100  
600  
Power Supply Quiescent Current  
I
Per channel, no load  
mA  
DD  
700  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
12.Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.  
13.Performance guaranteed over the indicated operating temperature range by design and/or characterization.  
http://onsemi.com  
11  
 
NCS20071, NCS20072, NCS20074  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.7  
0.6  
0.5  
0.4  
V
= 36 V  
S
T = 125°C  
T = 85°C  
T = 25°C  
V
S
= 2.7 V  
T = −40°C  
V
= 5 V  
S
V
S
= 10 V  
0.3  
0.2  
0
6
12  
18  
24  
30  
36  
−40 −20  
0
20  
40  
60  
80  
100 120  
SUPPLY VOLTAGE (V)  
TEMPERATURE (°C)  
Figure 3. Quiescent Current Per Channel vs.  
Supply Voltage  
Figure 4. Quiescent Current vs. Temperature  
0
−0.2  
−0.4  
−0.6  
−0.8  
−1  
5
4
V
=
18 V  
V
= mid−supply  
S
CM  
10 units  
3
2
1
T = −40°C  
0
−1  
−2  
−3  
−4  
−5  
T = 85°C  
T = 25°C  
T = 125°C  
−1.2  
0
6
12  
18  
24  
30  
36  
−18 −14 −10 −6  
−2  
2
6
10  
14 18  
SUPPLY VOLTAGE (V)  
COMMON MODE VOLTAGE (V)  
Figure 5. Offset Voltage vs. Supply Voltage  
Figure 6. Input Offset Voltage vs. Common  
Mode Voltage  
5
2.5  
125  
100  
75  
180  
135  
90  
V
S
V
S
V
S
V
S
= 2.7 V, Gain  
= 36 V, Gain  
= 2.7 V, Phase  
= 36 V, Phase  
V
=
18 V  
S
Normal  
operation  
10 units  
0
GAIN  
−2.5  
−5  
50  
45  
25  
0
R = 10 kW  
C = 15 pF  
L
−7.5  
−10  
−12.5  
−15  
0
L
−45  
−90  
−135  
−180  
−25  
−50  
−75  
PHASE  
15.5  
16  
16.5  
17  
17.5  
18  
18.5  
10  
100  
1k  
10k  
100k  
1M  
10M  
COMMON MODE VOLTAGE (V)  
FREQUENCY (Hz)  
Figure 7. Input Offset Voltage vs. Common  
Mode Voltage  
Figure 8. Gain and Phase vs. Frequency  
http://onsemi.com  
12  
NCS20071, NCS20072, NCS20074  
60  
50  
40  
30  
20  
10  
0
1E+1  
V
= 36 V  
= 1 kHz  
A = 1  
V
S
V
= 5 V  
S
F
IN  
R = 10 kW  
L
1E+0  
1E−1  
1E−2  
1E−3  
1E−4  
T = 25°C  
A
0
100  
200  
300  
400  
500  
0
6
12  
18  
24  
30  
36  
CAPACITIVE LOAD (pF)  
OUTPUT VOLTAGE (Vpp)  
Figure 9. Phase Margin vs. Capacitive Load  
Figure 10. THD+N vs. Output Voltage  
275  
250  
225  
200  
175  
150  
125  
100  
75  
1E+1  
1E+0  
1E−1  
1E−2  
1E−3  
1E−4  
V
V
V
V
= 2.7 V  
= 5 V  
= 10 V  
= 36 V  
S
S
S
S
A = 1  
V
V
= 2.7 V  
S
V
= 5 V  
S
V
= 10 V  
= 36 V  
S
V
S
50  
25  
0
10  
10  
100  
1k  
10k  
100  
1k  
10k  
100k  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 11. THD+N vs. Frequency  
Figure 12. Input Voltage Noise vs. Frequency  
140  
120  
100  
80  
5
V
S
V
S
V
S
V
S
= 2.7 V, V  
= 5 V, V  
V
S
V
S
V
S
V
S
= 2.7 V  
= 5 V  
= 10 V  
= 36 V  
DD  
SS  
4
3
= 10 V, V  
DD  
SS  
= 36 V V  
2
60  
1
40  
0
20  
0
−1  
10  
100  
1k  
10k  
100k  
10  
100  
1k  
10k  
100k  
1M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 13. Input Current Noise vs. Frequency  
Figure 14. PSRR vs. Frequency  
http://onsemi.com  
13  
NCS20071, NCS20072, NCS20074  
120  
100  
80  
60  
40  
20  
0
1.4  
V
S
V
S
V
S
V
S
= 2.7 V  
= 5 V  
= 10 V  
= 36 V  
T = −40°C  
T = 25°C  
T = 85°C  
T = 125°C  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
R = 10 kW  
T = 25°C  
A
L
V
S
= 36 V  
10  
100  
1k  
10k  
100k  
1M  
0
2
4
6
8
10  
12 14  
16 18 20  
FREQUENCY (Hz)  
OUTPUT CURRENT (mA)  
Figure 15. CMRR vs. Frequency  
Figure 16. High Level Output vs. Output  
Current  
1
0.8  
0.6  
0.4  
0.2  
0
18.1  
18.05  
18  
Input  
Output  
T = −40°C  
T = 25°C  
T = 85°C  
T = 125°C  
V
= 36 V  
S
A = +1  
R = 10 kW  
L
V
17.95  
17.9  
V
S
= 36 V  
0
2
4
6
8
10  
12 14  
16 18 20  
−20  
0
20  
40  
60  
OUTPUT CURRENT (mA)  
TIME (ms)  
Figure 17. Low Level Output vs. Output  
Current  
Figure 18. Non−inverting Small Signal  
Transient Response  
18.075  
18.05  
18.025  
18  
25  
Input  
Output  
20  
15  
10  
V
= 36 V  
S
17.975  
17.95  
17.925  
A = +1  
R = 10 kW  
L
V
V
S
= 36 V  
A = +1  
R = 10 kW  
L
V
Input  
Output  
−20  
0
20  
40  
60  
−20  
0
20  
40  
60  
TIME (ms)  
TIME (ms)  
Figure 19. Inverting Small Signal Transient  
Response  
Figure 20. Non−inverting Large Signal  
Transient Response  
http://onsemi.com  
14  
NCS20071, NCS20072, NCS20074  
24  
22  
20  
18  
16  
14  
12  
10  
1200  
V
S
= 36 V  
1000  
800  
600  
400  
200  
0
I +  
V
= 36 V  
IB  
S
I −  
A = −1  
R = 10 kW  
L
IB  
V
I
OS  
Input  
Output  
−200  
−20  
0
20  
40  
60  
−25  
0
25  
50  
75  
100  
125  
TIME (ms)  
TEMPERATURE (°C)  
Figure 21. Inverting Large Signal Transient  
Response  
Figure 22. Input Bias and Offset Current vs.  
Temperature  
50  
40  
0.1 Hz to 10 Hz noise  
V
S
= 36 V  
V
S
=
18 V, V = V /2  
CM S  
I +  
IB  
R = 10 kW, C = 100 pF  
30  
L
L
I −  
IB  
A = −1, V = 0 V  
V
IN  
I
OS  
20  
10  
0
−10  
−20  
−30  
−40  
−50  
0
6
12  
18  
24  
30  
36  
0
1
2
3
4
5
6
7
8
9
10  
COMMON MODE VOLTAGE (V)  
TIME (s)  
Figure 23. Input Bias Current vs. Common  
Mode Voltage  
Figure 24. 0.1 Hz to 10 Hz Noise  
0
500  
V
S
V
S
V
S
V
S
= 2.7 V  
= 5 V  
= 10 V  
= 36 V  
R = 10 kW  
C = 25 pF  
L
L
450  
400  
350  
300  
250  
200  
150  
100  
50  
−20  
−40  
−60  
−80  
−100  
−120  
−140  
−160  
V
S
V
S
V
S
V
S
= 2.7 V  
= 5 V  
= 10 V  
= 36 V  
0
10  
100  
1k  
10k  
100k  
1M  
10  
100  
1k  
10k  
100k  
1M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 25. Channel Separation vs. Frequency  
Figure 26. Open Loop Output Impedance  
http://onsemi.com  
15  
NCS20071, NCS20072, NCS20074  
1000  
500  
10  
V
= 36 V  
S
V
= 36 V  
S
8
6
10 V step  
A = −1  
5 Units  
= mid−supply  
V
V
CM  
0
4
2
12−bit Setting  
−500  
−1000  
−1500  
−2000  
−2500  
0
1/2LSB = 0.024%  
−2  
−4  
−6  
−8  
−10  
−50  
−25  
0
25  
50  
75  
100  
125  
0
5
10  
15  
20 25 30 35 40  
45 50  
TEMPERATURE (°C)  
TIME (ms)  
Figure 27. Offset Voltage vs. Temperature  
Figure 28. Large Signal Settling Time  
5
4
3
2
1
0
SR+  
SR−  
V
S
= 36 V  
−40 −20  
0
20  
40  
60  
80  
100 120  
TEMPERATURE (°C)  
Figure 29. Slew Rate vs. Temperature  
http://onsemi.com  
16  
NCS20071, NCS20072, NCS20074  
PACKAGE DIMENSIONS  
SOT−553, 5 LEAD  
CASE 463B  
ISSUE C  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
A
−X−  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
L
5
4
3
MILLIMETERS  
INCHES  
NOM  
0.022  
0.009  
0.005  
0.063  
0.047  
0.020 BSC  
0.008  
0.063  
E
−Y−  
DIM  
A
b
c
D
E
MIN  
0.50  
0.17  
0.08  
1.55  
1.15  
NOM  
0.55  
0.22  
0.13  
1.60  
MAX  
MIN  
MAX  
0.024  
0.011  
0.007  
0.065  
0.049  
H
E
0.60  
0.27  
0.18  
1.65  
1.25  
0.020  
0.007  
0.003  
0.061  
0.045  
1
2
b 5 PL  
c
1.20  
e
M
e
L
0.50 BSC  
0.20  
1.60  
0.08 (0.003)  
X Y  
0.10  
1.55  
0.30  
1.65  
0.004  
0.061  
0.012  
0.065  
H
E
RECOMMENDED  
SOLDERING FOOTPRINT*  
0.3  
0.0118  
0.45  
0.0177  
1.0  
0.0394  
1.35  
0.0531  
0.5  
0.5  
0.0197 0.0197  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
17  
NCS20071, NCS20072, NCS20074  
PACKAGE DIMENSIONS  
TSOP−5  
CASE 483−02  
ISSUE K  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
NOTE 5  
5X  
D
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE  
MINIMUM THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD  
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT  
EXCEED 0.15 PER SIDE. DIMENSION A.  
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL  
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.  
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2  
FROM BODY.  
0.20 C A B  
2X  
0.10  
T
M
5
4
3
2X  
0.20  
T
B
S
1
2
K
B
A
DETAIL Z  
G
A
MILLIMETERS  
TOP VIEW  
DIM  
A
B
MIN  
3.00 BSC  
1.50 BSC  
MAX  
DETAIL Z  
C
D
0.90  
0.25  
1.10  
0.50  
J
G
H
J
K
M
S
0.95 BSC  
C
0.01  
0.10  
0.20  
0
0.10  
0.26  
0.60  
0.05  
H
SEATING  
PLANE  
END VIEW  
C
10  
_
_
SIDE VIEW  
2.50  
3.00  
SOLDERING FOOTPRINT*  
1.9  
0.074  
0.95  
0.037  
2.4  
0.094  
1.0  
0.039  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
18  
NCS20071, NCS20072, NCS20074  
PACKAGE DIMENSIONS  
Micro8 / MSOP8 (150 mil)  
CASE 846AH  
ISSUE A  
SOLDERING FOOTPRINT*  
4.30  
(Unit: mm)  
1.0  
0.35  
0.65  
NOTE: The measurements are not to guarantee but for reference only.  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
http://onsemi.com  
19  
NCS20071, NCS20072, NCS20074  
PACKAGE DIMENSIONS  
SOIC−8 NB  
CASE 751−07  
ISSUE AK  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
−X−  
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW  
STANDARD IS 751−07.  
S
M
M
B
0.25 (0.010)  
Y
1
K
−Y−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
G
MIN  
MAX  
0.197  
0.157  
0.069  
0.020  
A
B
C
D
G
H
J
K
M
N
S
4.80  
3.80  
1.35  
0.33  
5.00 0.189  
4.00 0.150  
1.75 0.053  
0.51 0.013  
C
N X 45  
_
SEATING  
PLANE  
1.27 BSC  
0.050 BSC  
−Z−  
0.10  
0.19  
0.40  
0
0.25 0.004  
0.25 0.007  
1.27 0.016  
0.010  
0.010  
0.050  
8
0.020  
0.244  
0.10 (0.004)  
M
J
H
D
8
0
_
_
_
_
0.25  
5.80  
0.50 0.010  
6.20 0.228  
M
S
S
X
0.25 (0.010)  
Z
Y
SOLDERING FOOTPRINT*  
1.52  
0.060  
7.0  
4.0  
0.275  
0.155  
0.6  
0.024  
1.270  
0.050  
mm  
inches  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
20  
NCS20071, NCS20072, NCS20074  
PACKAGE DIMENSIONS  
TSSOP−8  
CASE 948S  
ISSUE C  
8x K REF  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
M
S
S
V
0.10 (0.004)  
T U  
S
0.20 (0.008) T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.  
PROTRUSIONS OR GATE BURRS. MOLD FLASH  
OR GATE BURRS SHALL NOT EXCEED 0.15  
(0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE INTERLEAD  
FLASH OR PROTRUSION. INTERLEAD FLASH OR  
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)  
PER SIDE.  
5. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
6. DIMENSION A AND B ARE TO BE DETERMINED  
AT DATUM PLANE -W-.  
8
5
4
2X L/2  
B
−U−  
J
J1  
L
1
PIN 1  
IDENT  
K1  
K
S
0.20 (0.008) T U  
A
SECTION N−N  
−V−  
MILLIMETERS  
INCHES  
MIN  
DIM MIN  
MAX  
3.10  
4.50  
1.10  
0.15  
0.70  
MAX  
0.122  
0.177  
0.043  
0.006  
0.028  
A
B
2.90  
4.30  
---  
0.114  
0.169  
---  
−W−  
C
C
0.076 (0.003)  
D
0.05  
0.50  
0.002  
0.020  
F
DETAIL E  
SEATING  
D
−T−  
G
G
J
0.65 BSC  
0.026 BSC  
PLANE  
0.09  
0.09  
0.19  
0.19  
0.20  
0.16  
0.30  
0.25  
0.004  
0.004  
0.007  
0.007  
0.008  
0.006  
0.012  
0.010  
J1  
K
0.25 (0.010)  
N
K1  
L
6.40 BSC  
0.252 BSC  
0
M
M
0
8
8
_
_
_
_
N
F
DETAIL E  
http://onsemi.com  
21  
NCS20071, NCS20072, NCS20074  
PACKAGE DIMENSIONS  
UDFN8, 1.6x1.6, 0.4P  
CASE 517AC  
ISSUE A  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
A
D
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED TERMINAL  
AND IS MEASURED BETWEEN 0.25 AND  
0.30 mm FROM TERMINAL.  
B
2X  
0.10  
C
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
5. EXPOSED PADS CONNECTED TO DIE FLAG.  
USED AS TEST CONTACTS.  
PIN ONE  
REFERENCE  
E
MILLIMETERS  
2X  
(A3)  
DIM MIN  
0.45  
A1 0.00  
NOM MAX  
0.10  
C
A
0.50  
0.03  
0.55  
0.05  
TOP VIEW  
A3  
0.127 REF  
b
D
0.15  
0.20  
1.60 BSC  
0.80  
1.60 BSC  
0.50  
0.25  
A
(A3)  
D2 0.70  
E
E2 0.40  
0.90  
0.60  
0.10  
0.08  
C
C
e
K
L
0.40 BSC  
−−−  
0.30  
SEATING  
PLANE  
0.20  
0.20  
−−−  
0.40  
8X  
SIDE VIEW  
D2  
C
A1  
e
SOLDERING FOOTPRINT*  
0.490  
0.0193  
0.924  
0.0364  
8X L  
4
1
E2  
0.902  
0.0355  
0.200  
0.0079  
8
5
8X K  
8X b  
0.10 C A B  
BOTTOM VIEW  
0.400  
0.0157  
PITCH  
NOTE 3  
C
0.05  
0.502  
0.0197  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
22  
NCS20071, NCS20072, NCS20074  
PACKAGE DIMENSIONS  
TSSOP−14  
CASE 948G  
ISSUE B  
NOTES:  
14X K REF  
1. DIMENSIONING AND TOLERANCING PER  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL  
IN EXCESS OF THE K DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
S
0.15 (0.006) T U  
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
−U−  
L
N
PIN 1  
IDENT.  
F
7
1
DETAIL E  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE −W−.  
S
K
0.15 (0.006) T U  
A
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
K1  
−V−  
A
B
C
D
F
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION N−N  
G
H
J
J1  
K
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
−W−  
C
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
0.10 (0.004)  
0
8
0
8
_
_
_
_
SEATING  
−T−  
H
G
DETAIL E  
D
PLANE  
SOLDERING FOOTPRINT*  
7.06  
1
0.65  
PITCH  
14X  
0.36  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
23  
NCS20071, NCS20072, NCS20074  
PACKAGE DIMENSIONS  
SOIC−14 NB  
CASE 751A−03  
ISSUE K  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C A  
DETAIL A  
h
A
X 45  
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
SOLDERING FOOTPRINT*  
6.50  
14X  
1.18  
1
1.27  
PITCH  
14X  
0.58  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,  
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC  
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC  
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for  
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where  
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and  
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture  
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
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For additional information, please contact your local  
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NCS20071/D  

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