NCS20091_16 [ONSEMI]
Operational Amplifier, Rail-to-Rail Input;
| 型号： | NCS20091_16 |
| 厂家： | 
ONSEMI |
| 描述： | Operational Amplifier, Rail-to-Rail Input |
| 文件： | 总20页 (文件大小：685K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCS20091, NCV20091,
NCS20092, NCV20092,
NCS20094, NCV20094
Operational Amplifier,
Rail-to-Rail Input and
Output, 350 kHz
www.onsemi.com
The NCS2009 series operational amplifiers provide rail−to−rail
input and output operation, 350 kHz bandwidth, and are available in
single, dual, and quad configurations. Rail−to−rail operation gives
designers use of the entire supply voltage range while taking
advantage of the 350 kHz bandwidth. The NCS2009 can operate on
supply voltages from 1.8 to 5.5 V over a temperature range from
−40°C to 125°C. At a 1.8 V supply, this device has a slew rate of 0.15
V/ms while consuming only 20 mA of quiescent current per channel.
Since this is a CMOS device, high input impedance and low bias
currents make it ideal for interfacing to a wide variety of signal
sensors. The NCS2009 devices are available in a variety of compact
packages.
5
1
SC70−5
CASE 419A
TSOP−5/SOT23−5
CASE 483
8
1
Micro8]/MSOP8
SOIC−8
CASE 751
CASE 846A
Features
• Rail−to−Rail Input and Output
• Wide Supply Range: 1.8 to 5.5 V
• Wide Bandwidth: 350 kHz
14
1
• Slew Rate: 0.15 V/ms at V = 1.8 V
S
TSSOP−14
CASE 948G
TSSOP−8
CASE 948S
• Low Supply Current: 20 mA per Channel at V = 1.8 V
S
• Low Input Bias Current: 1 pA Typical
• Wide Temperature Range: −40°C to 125°C
• Available in a Variety of Packages
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
6
14
1
1
SOIC−14
CASE 751A
UDFN6
CASE 517AP
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
Applications
• Unity Gain Buffer
• Battery Powered / Low Quiescent Current Applications
• Low Cost Current Sensing
• Automotive
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
August, 2016 − Rev. 4
NCS2009/D
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
MARKING DIAGRAMS
Single Channel Configuration
NCS20091, NCV20091
5
1
XXMG
XXXAYWG
XX MG
G
G
G
1
SC70−5
CASE 419A
TSOP−5/SOT23−5
CASE 483
UDFN6
CASE 517AP
Dual Channel Configuration
NCS20092, NCV20092
8
8
XXX
YWW
A G
XXXXXX
ALYW
G
XXXX
AYWG
G
G
1
1
Micro8]/MSOP8
SOIC−8
CASE 751
TSSOP−8
CASE 948S
CASE 846A
Quad Channel Configuration
NCS20094, NCV20094
14
14
XXXX
XXXX
ALYWG
G
XXXXX
AWLYWWG
1
1
TSSOP−14
CASE 948G
SOIC−14
CASE 751A
XXXXX = Specific Device Code
= Assembly Location
WL, L = Wafer Lot
= Year
A
Y
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
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2
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
Single Channel Configuration
NCS20091, NCV20091
1
2
3
IN+
1
2
3
5
4
5
OUT
VSS
VDD
IN−
VDD
OUT
1
2
3
VSS
NC
6
5
4
OUT
VDD
IN+
+
−
VSS
IN−
IN−
4
IN+
SOT23−5 (TSOP−5)
SN2 Pinout
SC70−5, SOT23−5 (TSOP−5)
SQ3, SN3 Pinout
UDFN6 1.6 x 1.6
Quadruple Channel Configuration
NCS20094, NCV20094
Dual Channel Configuration
OUT 1
1
2
3
4
5
6
7
14
OUT 4
NCS20092, NCV20092
13 IN− 4
12 IN+ 4
IN− 1
IN+ 1
VDD
−
+
−
+
OUT 1
1
2
3
4
8
7
6
5
VDD
−
OUT 2
IN− 1
IN+ 1
VSS
VSS
11
+
IN− 2
IN+ 2
−
10
9
IN+ 3
IN− 3
OUT 3
IN+ 2
IN− 2
+
−
+
−
+
OUT 2
8
Figure 1. Pin Connections
ORDERING INFORMATION
†
Device
Configuration
Automotive
Marking
AAQ
Package
Shipping
NCS20091SQ3T2G
NCS20091SN2T1G
NCS20091SN3T1G
NCS20091MUTAG
NCV20091SQ3T2G
NCV20091SN2T1G
NCV20091SN3T1G
NCV20091MUTAG
NCS20092DMR2G
NCS20092DR2G
NCS20092DTBR2G
NCV20092DMR2G
NCV20092DR2G
NCV20092DTBR2G
NCS20094_
SC70
AEV
SOT23−5/TSOP−5
SOT23−5/TSOP−5
UDFN6
No
AEW
AJ
Single**
AAQ
SC70
AEV
SOT23−5/TSOP−5
SOT23−5/TSOP−5
UDFN6
Yes
AEW
AJ
2K92
NCS20092
K92
Micro8/MSOP8
SOIC−8
No
Yes
No
Contact local sales office for
more information
TSSOP−8
Dual
2K92
NCS20092
K92
Micro8/MSOP8
SOIC−8
TSSOP−8
TBD
SOIC−14
NCS20094_
TBD
SOP−14
NCS20094_
TBD
TSSOP−14
SOIC−14
Quad**
NCV20094_
TBD
NCV20094_
TBD
SOP−14
Yes
NCV20094_
TBD
TSSOP−14
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
**In Development. Not yet released.
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3
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
ABSOLUTE MAXIMUM RATINGS (Note 1)
Rating
Supply Voltage (V – V ) (Note 2)
Symbol
Limit
Unit
V
V
S
7
DD
SS
Input Voltage
V
I
V
SS
− 0.5 to V + 0.5
V
DD
Differential Input Voltage
Maximum Input Current
V
V
V
ID
s
I
10
100
mA
mA
mW
°C
°C
°C
V
I
Maximum Output Current
I
O
Continuous Total Power Dissipation (Note 2)
Maximum Junction Temperature
P
200
D
T
150
J
Storage Temperature Range
T
STG
−65 to 150
260
Mounting Temperature (Infrared or Convection – 20 sec)
T
mount
ESD Capability (Note 3)
Human Body Model
Machine Model
ESD
ESD
2000
100
HBM
MM
Charge Device Model
ESD
2000
CDM
Latch−Up Current (Note 4)
I
LU
100
mA
Moisture Sensitivity Level (Note 5)
MSL
Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS for Safe Operating Area.
2. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction
temperature of 150°C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability.
Shorting output to either VDD or VSS will adversely affect reliability.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115)
4. Latch−up Current tested per JEDEC standard: JESD78
5. Moisture Sensitivity Level tested per IPC/JEDEC standard: J- STD- 020A
THERMAL INFORMATION
Single Layer
Multi−Layer
Board (Note 6)
Board (Note 7)
Parameter
Symbol
Channels
Package
SC−70
Unit
SOT23−5/TSOP−5
UDFN6
Single
Micro8/MSOP8
SOIC−8
236
190
253
167
131
194
Junction to Ambient
Thermal Resistance
q
Dual
°C/W
JA
TSSOP−8
SOIC−14
SOP−14
Quad
TSSOP−14
2
6. Value based on 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm copper area
2
7. Value based on 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm copper area
OPERATING RANGES
Parameter
Symbol
Min
Max
Unit
V
Operating Supply Voltage
Differential Input Voltage
Input Common Mode Range
Ambient Temperature
V
S
1.8
5.5
V
V
V
ID
S
V
ICM
V
– 0.2
V + 0.2
DD
V
SS
T
−40
125
°C
A
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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4
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
ELECTRICAL CHARACTERISTICS AT VS = 1.8 V
T = 25°C; R ≥ 10 kW; V
= V
= mid−supply unless otherwise noted.
A
L
CM
OUT
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Note 8)
A
Parameter
INPUT CHARACTERISTICS
Input Offset Voltage
Symbol
Conditions
Min
Typ
Max
Unit
V
OS
0.5
3.5
mV
mV
mV/°C
pA
4
Offset Voltage Drift
DV /DT
1
1
OS
Input Bias Current (Note 8)
I
IB
1500
1100
pA
Input Offset Current (Note 8)
I
1
pA
OS
pA
Channel Separation
XTLK
DC
125
10
10
1
dB
Differential Input Resistance
Common Mode Input Resistance
Differential Input Capacitance
Common Mode Input Capacitance
Common Mode Rejection Ratio
R
R
C
GW
GW
pF
ID
IN
ID
C
5
pF
CM
CMRR
V
V
= V – 0.2 to V + 0.2
48
73
dB
CM
SS
DD
= V + 0.2 to V − 0.2
45
CM
SS
DD
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
A
85
120
dB
mA
mV
mV
VOL
73
Short Circuit Current
Output Voltage High
Output Voltage Low
I
Output to positive rail, sinking current
Output to negative rail, sourcing current
Voltage output swing from positive rail
8.5
7.5
3
SC
V
19
20
19
20
OH
V
Voltage output swing from negative rail
3
OL
AC CHARACTERISTICS
Unity Gain Bandwidth
Slew Rate at Unity Gain
Phase Margin
UGBW
SR
350
0.15
60
kHz
V/ms
°
V
ID
= 1.2 Vpp, Gain = 1
y
m
Gain Margin
A
15
dB
ms
m
S
Settling Time
t
V
IN
= 1.2 Vpp,
Settling time to 0.1%
Settling time to 0.01%
21
Gain = 1
27
Open Loop Output Impedance
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise
Input Referred Voltage Noise
Z
f = 100 Hz
1
W
OL
THD+N
V
IN
= 1.2 Vpp, f = 1 kHz, Av = 1
f = 1 kHz
0.04
40
%
e
nV/√Hz
n
f = 10 kHz
30
Input Referred Current Noise
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
i
f = 1 kHz
300
fA/√Hz
dB
n
PSRR
No Load
63
90
20
60
Power Supply Quiescent Current
I
Per channel, no load
29
mA
DD
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
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5
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
ELECTRICAL CHARACTERISTICS AT VS = 3.3 V
T = 25°C; R ≥ 10 kW; V
= V
= mid−supply unless otherwise noted.
A
L
CM
OUT
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Note 9)
A
Parameter
INPUT CHARACTERISTICS
Input Offset Voltage
Symbol
Conditions
Min
Typ
Max
Unit
V
OS
0.5
3.5
mV
mV
mV/°C
pA
4
Offset Voltage Drift
DV /DT
1
1
OS
Input Bias Current (Note 9)
I
IB
1500
1100
pA
Input Offset Current (Note 9)
I
1
pA
OS
pA
Channel Separation
XTLK
DC
125
10
10
1
dB
Differential Input Resistance
Common Mode Input Resistance
Differential Input Capacitance
Common Mode Input Capacitance
Common Mode Rejection Ratio
R
R
C
GW
GW
pF
ID
IN
ID
C
5
pF
CM
CMRR
V
V
= V – 0.2 to V + 0.2
53
76
dB
CM
SS
DD
= V + 0.2 to V − 0.2
48
CM
SS
DD
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
A
85
120
dB
mA
mV
mV
VOL
73
Short Circuit Current
Output Voltage High
Output Voltage Low
I
Output to positive rail, sinking current
Output to negative rail, sourcing current
Voltage output swing from positive rail
8.5
7.5
3
SC
V
24
25
24
25
OH
V
Voltage output swing from negative rail
3
OL
AC CHARACTERISTICS
Unity Gain Bandwidth
Slew Rate at Unity Gain
Phase Margin
UGBW
SR
350
0.15
60
kHz
V/ms
°
V
IN
= 2.5 Vpp, Gain = 1
y
m
Gain Margin
A
15
dB
ms
m
S
Settling Time
t
V
IN
= 2.5 Vpp,
Settling time to 0.1%
Settling time to 0.01%
21
Gain = 1
27
Open Loop Output Impedance
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise
Input Referred Voltage Noise
Z
f = 100 Hz
1
W
OL
THD+N
V
IN
= 2.5 Vpp, f = 1 kHz, Av = 1
f = 1 kHz
0.04
40
%
e
nV/√Hz
n
f = 10 kHz
30
Input Referred Current Noise
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
i
f = 1 kHz
300
fA/√Hz
dB
n
PSRR
No Load
63
90
21
60
Power Supply Quiescent Current
I
Per channel, no load
31
mA
DD
9. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
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6
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
ELECTRICAL CHARACTERISTICS AT VS = 5.5 V
T = 25°C; R ≥ 10 kW; V
= V
= mid−supply unless otherwise noted.
A
L
CM
OUT
Boldface limits apply over the specified temperature range, T = −40°C to 125°C. (Note 10)
A
Parameter
INPUT CHARACTERISTICS
Input Offset Voltage
Symbol
Conditions
Min
Typ
Max
Unit
V
OS
0.5
4
mV
mV
mV/°C
pA
5
Offset Voltage Drift
DV /DT
1
1
OS
Input Bias Current (Note 10)
I
IB
1500
1100
pA
Input Offset Current (Note 10)
I
1
pA
OS
pA
Channel Separation
XTLK
DC
125
10
10
1
dB
Differential Input Resistance
Common Mode Input Resistance
Differential Input Capacitance
Common Mode Input Capacitance
Common Mode Rejection Ratio
R
R
C
GW
GW
pF
ID
IN
ID
C
5
pF
CM
CMRR
V
V
= V – 0.2 to V + 0.2
55
79
dB
CM
SS
DD
= V + 0.2 to V − 0.2
51
CM
SS
DD
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
A
90
120
dB
mA
mV
mV
VOL
78
Short Circuit Current
Output Voltage High
Output Voltage Low
I
Output to positive rail, sinking current
Output to negative rail, sourcing current
Voltage output swing from positive rail
8.5
7.5
3
SC
V
24
25
24
25
OH
V
Voltage output swing from negative rail
3
OL
AC CHARACTERISTICS
Unity Gain Bandwidth
Slew Rate at Unity Gain
Phase Margin
UGBW
SR
350
0.15
60
kHz
V/ms
°
V
ID
= 5 Vpp, Gain = 1
y
m
Gain Margin
A
15
dB
ms
m
S
Settling Time
t
V
IN
= 5 Vpp,
Settling time to 0.1%
Settling time to 0.01%
f = 100 Hz
21
Gain = 1
27
Open Loop Output Impedance
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise
Input Referred Voltage Noise
Z
OL
1
W
THD+N
V
IN
= 5 Vpp, f = 1 kHz, Av = 1
f = 1 kHz
0.04
40
%
e
nV/√Hz
n
f = 10 kHz
30
Input Referred Current Noise
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio
i
f = 1 kHz
300
fA/√Hz
dB
n
PSRR
No Load
63
90
23
60
Power Supply Quiescent Current
I
Per channel, no load
33
mA
DD
10.Performance guaranteed over the indicated operating temperature range by design and/or characterization.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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7
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
TYPICAL PERFORMANCE CHARACTERISTICS
T = 25°C, R ≥ 10 kW, V
= V
= mid−supply unless otherwise specified
A
L
CM
OUT
30
25
20
15
10
30
T = 125°C
V
S
= 3.3 V
25
20
15
10
V
V
= 5.5 V
= 1.8 V
S
T = 25°C
T = −40°C
S
5
0
5
0
1.5
2.5
3.5
SUPPLY VOLTAGE (V)
4.5
5.5
−40 −20
0
20
40
60
80
100 120 140
TEMPERATURE (°C)
Figure 2. Quiescent Current per Channel vs.
Supply Voltage
Figure 3. Quiescent Current vs. Temperature
0.6
0.5
0.4
0.3
0.2
0.6
0.5
V
= 1.8 V
S
V
V
= 3.3 V
= 5.5 V
S
T = 25°C
0.4
0.3
0.2
S
T = 125°C
T = −40°C
0.1
0
0.1
0
1.5 2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
−40 −20
0
20
40
60
80 100 120 140
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
Figure 4. Offset Voltage vs. Supply Voltage
Figure 5. Offset Voltage vs. Temperature
4
3
2
1
140
120
100
80
180
V
= 5.5 V
S
10 units
Gain
135
90
Phase Margin
60
0
−1
40
R = 10 kW
−2
20
45
0
L
C = 15 pF
L
−3
−4
0
T = 25°C
−20
−2.75 −2.00 −1.25 −0.50
0
0.50
1.25
2.00 2.75
1
10
100
1k
10k
100k
1M 10M
COMMON MODE VOLTAGE (V)
FREQUENCY (Hz)
Figure 6. Offset Voltage vs. Common Mode
Voltage
Figure 7. Open−loop Gain and Phase Margin
vs. Frequency
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8
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
TYPICAL PERFORMANCE CHARACTERISTICS
T = 25°C, R ≥ 10 kW, V
= V
= mid−supply unless otherwise specified
A
L
CM
OUT
70
60
50
40
30
20
100
V
= 5.5 V
V
f
= 5.5 V
= 1 kHz
S
S
R = 10 kW
T = 25°C
L
IN
10
1
A = 1
V
0.1
0.01
0.001
10
0
0.0001
0
100
200
300
400
500
0.01
0.1
1
CAPACITIVE LOAD (pF)
OUTPUT VOLTAGE (Vpp)
Figure 8. Phase Margin vs. Capacitive Load
Figure 9. THD + N vs. Output Voltage
10
1
1000
900
800
700
600
500
A = 1
V
V
S
= 5.5 V
0.1
400
300
200
V
S
= 1.8 V
0.01
V
S
= 3.3 V
100
0
V
S
= 5.5 V
0.001
10
100
1k
FREQUENCY (Hz)
10k
100k
1
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 10. THD + N vs. Frequency
Figure 11. Input Voltage Noise vs. Frequency
1400
1200
1000
120
100
80
V
= 5.5 V, PSRR+
= 5.5 V, PSRR−
S
V
S
= 5.5 V
V
S
800
600
400
60
V
= 1.8 V, PSRR+
= 1.8 V, PSRR−
S
V
S
40
20
0
200
0
1
10
100
1k
10k
100k
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 12. Input Current Noise vs. Frequency
Figure 13. PSRR vs. Frequency
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9
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
TYPICAL PERFORMANCE CHARACTERISTICS
T = 25°C, R ≥ 10 kW, V
= V
= mid−supply unless otherwise specified
A
L
CM
OUT
90
80
70
60
50
40
30
20
300
V
S
= 1.8 V
V
V
= 5.5 V
= 3.3 V
S
V
S
= 1.8 V
A = 1
V
250
200
150
100
V
V
= 3.3 V
= 5.5 V
S
S
S
50
0
10
0
10
100
1k
10k
100k
1M
0
2
4
6
8
10
FREQUENCY (Hz)
OUTPUT CURRENT (mA)
Figure 14. CMRR vs. Frequency
Figure 15. Output Voltage High to Rail
500
400
300
200
0.10
0.08
0.06
V
S
= 1.8 V
Input
Output
0.04
0.02
0
V
S
= 3.3 V
= 5.5 V
−0.02
−0.04
−0.06
V
S
100
0
−0.08
−0.10
0
2
4
6
8
10
−20 −10
0
10 20
30 40 50 60 70 80
OUTPUT CURRENT (mA)
TIME (ms)
Figure 16. Output Voltage Low to Rail
Figure 17. Non−Inverting Small Signal
Transient Response
0.10
0.08
0.06
0.04
0.02
0
1.0
0.8
Input
Output
Input
Output
0.6
0.4
0.2
0
−0.2
−0.4
−0.6
−0.02
−0.04
−0.06
−0.8
−1.0
−0.08
−0.10
−20 −10
0
10 20 30 40 50 60 70 80
−20 −10
0
10 20 30 40 50 60 70 80
TIME (ms)
TIME (ms)
Figure 18. Inverting Small Signal Transient
Response
Figure 19. Non−Inverting Large Signal
Transient Response
www.onsemi.com
10
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
TYPICAL PERFORMANCE CHARACTERISTICS
T = 25°C, R ≥ 10 kW, V
= V = mid−supply unless otherwise specified
A
L
CM
OUT
2.0
1.5
1.0
0.5
0
600
500
Input
Output
400
I
IB+
300
200
100
I
IB−
−0.5
−1.0
I
OS
0
−1.5
−2.0
−100
−20 −10
0
10 20 30 40 50 60 70 80
−40 −20
0
20
40
60
80
100 120 140
TIME (ms)
TEMPERATURE (°C)
Figure 20. Inverting Large Signal Transient
Response
Figure 21. Input Bias and Offset Current vs.
Temperature
6
4
2
0
6
4
I
IB+
2
0
I
IB−
I
OS
−2
−2
−4
−4
−6
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
COMMON MODE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10
TIME (s)
Figure 22. Input Bias Current vs. Common
Mode Voltage
Figure 23. 0.1 Hz to 10 Hz Noise
−60
−80
10k
1k
A = 1
V
V
S
= 1.8 V
100
10
1
V
S
= 5.5 V
−100
−120
−140
0.1
0.01
100
1k
10k
100k
1M
10M
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 24. Channel Separation vs. Frequency
Figure 25. Output Impedance vs. Frequency
www.onsemi.com
11
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
TYPICAL PERFORMANCE CHARACTERISTICS
T = 25°C, R ≥ 10 kW, V
= V
= mid−supply unless otherwise specified
A
L
CM
OUT
0.20
0.15
0.10
SR+
SR−
0.05
0
−40 −20
0
20
40
60
80 100 120 140
TEMPERATURE (°C)
Figure 26. Slew Rate vs. Temperature
www.onsemi.com
12
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
G
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
3
−B−
S
INCHES
MILLIMETERS
DIM MIN
MAX
0.087
0.053
0.043
0.012
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
1
2
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.026 BSC
0.65 BSC
M
M
B
D 5 PL
0.2 (0.008)
---
0.004
0.004
0.004
0.010
0.012
---
0.10
0.10
0.10
0.25
0.30
K
N
S
N
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
J
C
K
H
SOLDER FOOTPRINT
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
www.onsemi.com
13
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
PACKAGE DIMENSIONS
TSOP−5
CASE 483
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
NOTE 5
5X
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
0.20 C A B
2X
0.10
T
M
5
4
3
2X
0.20
T
B
S
1
2
K
B
A
DETAIL Z
G
A
MILLIMETERS
TOP VIEW
DIM
A
B
MIN
3.00 BSC
1.50 BSC
MAX
DETAIL Z
C
D
0.90
0.25
1.10
0.50
J
G
H
J
K
M
S
0.95 BSC
C
0.01
0.10
0.20
0
0.10
0.26
0.60
0.05
H
SEATING
PLANE
END VIEW
C
10
_
_
SIDE VIEW
2.50
3.00
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
14
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AP
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
B
2X
L
0.10
C
L1
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN ONE
E
DETAIL A
REFERENCE
OPTIONAL
MILLIMETERS
CONSTRUCTION
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
2X
A
0.10
C
MOLD CMPD
EXPOSED Cu
A3
b
0.13 REF
TOP VIEW
0.20
0.30
D
E
e
1.60 BSC
1.60 BSC
0.50 BSC
A3
A
(A3)
DETAIL B
D2 1.10
E2 0.45
1.30
0.65
−−−
0.40
0.15
0.05
0.05
C
C
A1
K
L
0.20
0.20
DETAIL B
OPTIONAL
CONSTRUCTION
6X
L1 0.00
SIDE VIEW
SEATING
PLANE
C
A1
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
DETAIL A
6X L
1.26
D2
3
1
E2
6X
0.52
0.61 1.90
6
5
6X K
6X b
0.10 C A B
e
1
NOTE 3
C
0.05
BOTTOM VIEW
0.50 PITCH
6X
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
15
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
PACKAGE DIMENSIONS
Micro8t
CASE 846A−02
ISSUE J
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
H
E
E
MILLIMETERS
INCHES
NOM
−−
0.003
0.013
0.007
0.118
DIM
A
A1
b
c
D
MIN
−−
NOM
−−
MAX
MIN
−−
MAX
0.043
0.006
0.016
0.009
0.122
0.122
PIN 1 ID
e
1.10
0.15
0.40
0.23
3.10
3.10
b 8 PL
0.05
0.25
0.13
2.90
2.90
0.08
0.002
0.010
0.005
0.114
0.114
0.33
M
S
S
0.08 (0.003)
T B
A
0.18
3.00
E
3.00
0.118
e
L
0.65 BSC
0.55
4.90
0.026 BSC
0.021
0.193
SEATING
PLANE
0.40
4.75
0.70
5.05
0.016
0.187
0.028
0.199
−T−
H
E
A
0.038 (0.0015)
L
A1
c
RECOMMENDED
SOLDERING FOOTPRINT*
8X
8X
0.48
0.80
5.25
0.65
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
16
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
−X−
ANSI Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
MILLIMETERS
DIM MIN MAX
INCHES
G
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
1.27 BSC
0.050 BSC
−Z−
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
0.10 (0.004)
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
SOLDERING FOOTPRINT*
1.52
0.060
7.0
4.0
0.275
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
17
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
PACKAGE DIMENSIONS
TSSOP−8
CASE 948S
ISSUE C
8x K REF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
M
S
S
V
0.10 (0.004)
T U
S
0.20 (0.008) T U
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE -W-.
8
5
4
2X L/2
B
−U−
J
J1
L
1
PIN 1
IDENT
K1
K
S
0.20 (0.008) T U
A
SECTION N−N
−V−
MILLIMETERS
INCHES
MIN
0.114
DIM MIN
MAX
MAX
0.122
0.177
0.043
0.006
0.028
A
B
2.90
4.30
---
3.10
−W−
4.50 0.169
1.10 ---
C
C
0.076 (0.003)
D
0.05
0.50
0.15 0.002
0.70 0.020
F
DETAIL E
SEATING
D
−T−
G
G
J
0.65 BSC
0.026 BSC
PLANE
0.09
0.09
0.19
0.19
0.20 0.004
0.16 0.004
0.30 0.007
0.25 0.007
0.008
0.006
0.012
0.010
J1
K
0.25 (0.010)
N
K1
L
6.40 BSC
0.252 BSC
0
M
M
0
8
8
_
_
_
_
N
F
DETAIL E
www.onsemi.com
18
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE K
NOTES:
D
A
B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
14
8
7
A3
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
L
DETAIL A
1
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
13X b
M
M
B
0.25
A
A1
A3
b
D
E
1.35
0.10
0.19
0.35
8.55
3.80
1.75 0.054 0.068
0.25 0.004 0.010
0.25 0.008 0.010
0.49 0.014 0.019
8.75 0.337 0.344
4.00 0.150 0.157
M
S
S
B
0.25
C A
DETAIL A
h
A
X 45
_
e
H
h
L
1.27 BSC
0.050 BSC
6.20 0.228 0.244
0.50 0.010 0.019
1.25 0.016 0.049
5.80
0.25
0.40
0
M
A1
e
M
7
0
7
_
_
_
_
SEATING
PLANE
C
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
19
NCS20091, NCV20091, NCS20092, NCV20092, NCS20094, NCV20094
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G
ISSUE B
NOTES:
14X K REF
1. DIMENSIONING AND TOLERANCING PER
M
S
S
V
ANSI Y14.5M, 1982.
0.10 (0.004)
T U
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
S
0.15 (0.006) T U
N
0.25 (0.010)
14
8
2X L/2
M
B
−U−
L
N
PIN 1
IDENT.
F
7
1
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
DETAIL E
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
K
0.15 (0.006) T U
A
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
K1
−V−
A
B
C
D
F
4.90
4.30
−−−
0.05
0.50
5.10 0.193 0.200
4.50 0.169 0.177
J J1
1.20
−−− 0.047
0.15 0.002 0.006
0.75 0.020 0.030
SECTION N−N
G
H
J
J1
K
0.65 BSC
0.026 BSC
0.60 0.020 0.024
0.20 0.004 0.008
0.16 0.004 0.006
0.30 0.007 0.012
0.25 0.007 0.010
0.50
0.09
0.09
0.19
−W−
C
K1 0.19
L
M
6.40 BSC
0.252 BSC
0.10 (0.004)
0
8
0
8
_
_
_
_
SEATING
−T−
H
G
DETAIL E
D
PLANE
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
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NCS2009/D
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SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137
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SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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