NCS21802 [ONSEMI]

Precision Operational Amplifier, 10 V, Zero-Drift, 1.6 V to 5.5 V Supply, 1.5 MHz;
NCS21802
型号: NCS21802
厂家: ONSEMI    ONSEMI
描述:

Precision Operational Amplifier, 10 V, Zero-Drift, 1.6 V to 5.5 V Supply, 1.5 MHz

文件: 总13页 (文件大小:187K)
中文:  中文翻译
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Precision Operational  
Amplifier, 10 mV, Zero-Drift,  
1.6 V to 5.5 V Supply,  
1.5 MHz  
Product Preview  
www.onsemi.com  
NCS21801, NCS21802,  
NCS21803, NCS21804  
The NCS21801, NCS21802, NCS21803, and NCS21804 are  
precision op amps featuring low input offset voltage and low offset  
drift over time and temperature. The common mode voltage range  
extends 100 mV beyond the supply rails, which makes it suitable for  
both highside and lowside current sensing applications.  
The NCS2180x is available in single, dual, and quad channel  
configurations. All versions are specified for operation from 40°C to  
+125°C. NCV prefix parts are automotive grade 1 qualified and offer  
performance over the extended temperature range from 40°C to  
+150°C.  
5
5
1
1
SC88A / SC705  
CASE 419A02  
TSOP5  
CASE 483  
1
1
SC88 / SC706  
CASE 419B02  
UDFN8  
CASE 517AW  
Features  
Input Offset Voltage: 10 mV max  
14  
Offset Voltage Drift Over Temperature: 5 nV/°C  
Common Mode Input Voltage Range: V – 0.1 V to V + 0.1 V  
SS  
DD  
1
Micro8  
CASE 846A02  
TSSOP14 WB  
CASE 948G  
Supply Voltage Range: 1.8 V to 5.5 V  
Extended Supply Voltage Range: 1.6 V to 5.5 V for T = 0°C to 85°C  
A
Unity Gain Bandwidth: 1.5 MHz  
Quiescent Consumption: 95 mA max  
Enable Function available on NCS21803  
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 2 of this data sheet.  
NCV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ100  
Qualified and PPAP Capable  
PIN CONNECTIONS  
See pin connections on page 3 of this data sheet.  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
Applications  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
HighSide Current Sensing  
LowSide Current Sensing  
Difference Amplifier  
Instrumentation Amplifier  
Power Management  
Automotive  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
April, 2020 Rev. P1  
NCS21801/D  
NCS21801, NCS21802, NCS21803, NCS21804  
DEVICE MARKING INFORMATION  
6
XXAYWG  
XXMG  
XXMG  
G
G
G
1
TSOP5  
CASE 483  
SC88A / SC705  
CASE 419A02  
SC88 / SC706 / SOT363  
CASE 419B02  
14  
8
XX  
AYWG  
G
XX  
XX  
YM  
ALYWG  
G
1
1
1
UDFN8, 2x2, 0.5P  
CASE 517AW  
Micro8  
CASE 846A02  
TSSOP14 WB  
CASE 948G  
XX  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
W
M
= Work Week  
= Date Code  
G or G = PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Channels  
Enable  
Package  
Part Number  
Marking  
Shipping  
Industrial and Consumer  
Single  
No  
SOT235 / TSOP5  
SC705 / SC885 / SOT3535  
SC88 / SC706 / SOT363  
UDFN8  
NCS21801  
NCS21801  
3000 / Tape & Reel  
Yes  
No  
NCS21803  
Dual  
NCS21802MUTBG  
NCS21802DMR2G  
NCS21804  
3000 / Tape & Reel  
4000 / Tape & Reel  
2500 / Tape & Reel  
Micro8  
Quad  
No  
TSSOP14  
Automotive Qualified  
Single  
No  
SOT235 / TSOP5  
SC705 / SC885 / SOT3535  
Micro8  
NCV21801  
NCV21801  
3000 / Tape & Reel  
Dual  
No  
No  
NCV21802DMR2G  
NCV21804  
4000 / Tape & Reel  
2500 / Tape & Reel  
Quad  
TSSOP14  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
2
NCS21801, NCS21802, NCS21803, NCS21804  
PIN CONNECTIONS  
Single Channel Configuration  
NCS21801  
Single Channel with Enable Configuration  
NCS21803  
1
5
4
1
2
3
6
5
4
OUT  
VSS  
IN+  
IN+  
VSS  
IN  
VDD  
OUT  
IN+  
VSS  
IN−  
VDD  
EN  
1
2
3
VDD  
5
2
3
OUT  
4
IN  
SC705 / SC885 / SOT3535  
SC88 / SC706 / SOT363  
SOT235 / TSOP5  
Dual Channel Configuration  
NCS21802  
Quad Channel Configuration  
NCS21804  
1
OUT 1  
IN1  
IN+ 1  
VDD  
14  
13  
12  
11  
10  
9
OUT 4  
IN4  
IN+ 4  
OUT 1  
IN1  
IN+ 1  
VSS  
1
2
3
4
8
7
6
5
VDD  
2
OUT 2  
IN2  
IN+ 2  
+
+
+
3
4
5
6
7
+
VSS  
IN+ 3  
IN3  
OUT 3  
IN+ 2  
IN2  
+
+
UDFN8 / Micro8  
8
OUT 2  
TSSOP14  
www.onsemi.com  
3
NCS21801, NCS21802, NCS21803, NCS21804  
MAXIMUM RATINGS  
Parameter  
Symbol  
Rating  
0.3 to 6  
(V 0.3) to (V + 0.3)  
Unit  
V
Supply Voltage (Note 1)  
V
S
Input Voltage  
V
V
V
V
IN+, IN, EN  
SS  
DD  
Differential Input Voltage  
V
V
(V – V + 0.3)  
V
IN+, IN−  
DD  
SS  
Output Voltage (Note 2)  
V
(V 0.3) to (V + 0.3)  
V
OUT  
OUT  
SS  
DD  
Output Short Circuit Current (Note 3)  
Input Current into Any Pin (Note 2)  
Maximum Junction Temperature  
Storage Temperature Range  
I
Continuous  
I
10  
+150  
mA  
°C  
°C  
V
IN  
T
J(max)  
T
STG  
65 to +150  
2000  
ESD  
Human Body Model (Note 3)  
HBM  
Charged Device Model (Note 3)  
CDM  
1000  
V
Latchup Current (Note 4)  
100  
mA  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe  
operating parameters  
2. Input terminals are diodeclamped to the powersupply rails. Input signals that can swing more than 0.5 V beyond the supply rails should  
be current limited to 10 mA or less  
3. Short circuit current to ground.  
4. This device series incorporates ESD protection and is tested by the following methods:  
ESD Human Body Model tested per JEDEC standard JS0012017 (AECQ100002)  
ESD Charged Device Model tested per JEDEC standard JS0022014 (AECQ100011)  
5. Latchup Current tested per JEDEC standard: JESD78E.  
THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Package  
TSOP5 / SOT235  
SC705 / SC885 / SOT3535  
SC88 / SC706 / SOT363  
UDFN8  
Value  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
Unit  
Thermal Resistance,  
JunctiontoAir  
(Notes 6, 7)  
q
°C/W  
JA  
Micro8 / MSOP8  
TSSOP14  
6. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe  
operating parameters  
2
2
7. Values based on copper area of 645 mm (or 1 in ) of 1 oz copper thickness and FR4 PCB substrate  
RECOMMENDED OPERATING RANGES  
Parameter  
Ambient Temperature  
Symbol  
Conditions  
NCS prefix  
Min  
40  
40  
Max  
125  
150  
Unit  
T
A
°C  
NCV prefix  
Common Mode Input Voltage  
Supply Voltage  
V
Full temperature range  
V
SS  
– 0.1  
V + 0.1  
DD  
V
V
CM  
V
T = 0 to 85°C  
A
1.6  
1.8  
5.5  
5.5  
S
Full temperature range  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
4
NCS21801, NCS21802, NCS21803, NCS21804  
ELECTRICAL CHARACTERISTICS  
At T = +25°C, V = 3.3 V, and V  
= V  
= midsupply, unless otherwise noted. Boldface limits apply over the specified  
A
S
CM  
OUT  
temperature range, unless otherwise noted, guaranteed by characterization and/or design.  
Parameter  
Symbol  
Conditions  
Temp (°C)  
Min  
Typ  
Max  
Unit  
Input  
Common Mode Rejection  
Ratio  
CMRR  
V
= V 0.1 to V  
DD  
25  
113  
110  
90  
TBD  
dB  
CM  
+ 0.1  
SS  
–40 to 125  
–40 to 150  
25  
Input Offset Voltage  
V
OS  
10  
50  
mV  
Input Offset Voltage Drift  
vs. Temperature  
dV /dT  
OS  
–40 to 125  
–40 to 150  
25  
5
5
nV/°C  
75  
Input Bias Current  
Input Offset Current  
Input Capacitance  
I
IB  
TBD  
160  
600  
4000  
160  
600  
4000  
pA  
pA  
pF  
–40 to 125  
–40 to 150  
25  
I
5
OS  
–40 to 125  
–40 to 150  
25  
C
Differential  
Common mode  
Shutdown  
1
5
IN  
25  
Enable Input Low (Note 8)  
Enable Input High (Note 8)  
V
ENL  
–40 to 125  
–40 to 125  
25  
0.5  
V
V
V
ENH  
Enabled  
1.3  
Enable Pin Input Leakage  
(Note 8)  
I
1
100  
nA  
EN  
Output Characteristics  
Open Loop Voltage Gain  
A
25  
–40 to 125  
–40 to 150  
25  
120  
110  
90  
TBD  
dB  
VOL  
Output Voltage High,  
Referenced from  
V
V  
I
= 30 mA  
TBD  
22  
50  
mV  
DD  
OH  
OUT  
–40 to 125  
–40 to 150  
25  
V
DD  
Supply Rail  
100  
I
I
= 3 mA  
50  
OUT  
Output Voltage Low,  
V
V  
= 30 mA  
25  
TBD  
22  
90  
mV  
OL  
SS  
OUT  
Referenced to V Supply  
SS  
–40 to 125  
–40 to 150  
25  
Rail  
100  
I
= 3 mA  
50  
30  
OUT  
Short Circuit Current  
I
Sinking Current  
Sourcing Current  
25  
mA  
pF  
SC  
25  
30  
Maximum Capacitive Load  
C
No sustained oscillation  
25  
400  
L
Dynamic Response  
Bandwidth (f  
Gain Margin  
)
BW  
C = 20 pF  
25  
25  
25  
25  
25  
1.5  
15  
60  
0.7  
20  
MHz  
dB  
°
3dB  
L
A
C = 20 pF  
L
M
M
Phase Margin  
Slew Rate  
Φ
C = 20 pF  
L
SR  
V/ms  
ms  
Settling Time  
t
s
0.1%, A = 1  
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
8. The enable function is available on NCS21673 only  
9. Shutdown Time (t  
) and Enable Time (t ) are defined as the time between the 50% point of the signal applied to the EN pin and the  
OFF  
ON  
point at which the output voltage reaches within 10% of its final value  
www.onsemi.com  
5
NCS21801, NCS21802, NCS21803, NCS21804  
ELECTRICAL CHARACTERISTICS (continued)  
At T = +25°C, V = 3.3 V, and V = V = midsupply, unless otherwise noted. Boldface limits apply over the specified  
A
S
CM  
OUT  
temperature range, unless otherwise noted, guaranteed by characterization and/or design.  
Parameter  
Dynamic Response  
Overload Recovery Time  
Crosstalk  
Symbol  
Conditions  
Temp (°C)  
Min  
Typ  
Max  
Unit  
t
V
IN  
* GAIN > V  
S
25  
25  
25  
25  
25  
200  
100  
70  
ms  
dB  
dB  
OR  
f = 10 kHz  
EMI Rejection Ratio  
EMIRR  
f = 400 MHz  
f = 800 MHz  
f = 1.8 GHz  
77  
91  
Noise  
Voltage Noise Density  
e
f
f
= 1 kHz  
25  
25  
42  
nV/Hz  
N
in  
Voltage Noise,  
PeaktoPeak  
e
PP  
= 0.1 Hz to 10 Hz  
400  
nV  
PP  
in  
Current Noise Density  
Power Supply  
i
f
= 1 kHZ  
25  
20  
90  
fA/Hz  
mA  
N
in  
Quiescent Current  
I
Per channel  
Per channel  
25  
–40 to 125  
–40 to 150  
25  
95  
Q
125  
200  
300  
300  
Quiescent Current in  
Shutdown (Note 8)  
I
TBD  
nA  
QSD  
–40 to 125  
25  
Power Up Time  
t
40  
40  
ms  
ms  
ms  
dB  
ON  
Enable Time (Note 8, 9)  
Shutdown Time (Note 8, 9)  
t
25  
EN  
t
25  
TBD  
TBD  
OFF  
Power Supply Rejection  
Ratio  
PSRR  
V
V
= 1.6 V to 5.5 V  
= 1.8 V to 5.5 V  
25  
115  
110  
90  
S
–40 to 125  
–40 to 150  
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
8. The enable function is available on NCS21673 only  
9. Shutdown Time (t  
) and Enable Time (t ) are defined as the time between the 50% point of the signal applied to the EN pin and the  
OFF  
ON  
point at which the output voltage reaches within 10% of its final value  
www.onsemi.com  
6
 
NCS21801, NCS21802, NCS21803, NCS21804  
PACKAGE DIMENSIONS  
SC88A (SC705/SOT353)  
CASE 419A02  
ISSUE L  
A
NOTES:  
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. 419A01 OBSOLETE. NEW STANDARD  
419A02.  
G
4. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD FLASH, PROTRUSIONS, OR GATE  
BURRS.  
5
4
3
B−  
S
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
1.80  
1.15  
0.80  
0.10  
MAX  
2.20  
1.35  
1.10  
0.30  
1
2
A
B
C
D
G
H
J
0.071  
0.045  
0.031  
0.004  
0.087  
0.053  
0.043  
0.012  
0.026 BSC  
0.65 BSC  
M
M
B
D 5 PL  
0.2 (0.008)  
---  
0.004  
0.004  
0.004  
0.010  
0.012  
---  
0.10  
0.10  
0.10  
0.25  
0.30  
K
N
S
N
0.008 REF  
0.20 REF  
0.079  
0.087  
2.00  
2.20  
J
C
K
H
SOLDER FOOTPRINT  
0.50  
0.0197  
0.65  
0.025  
0.65  
0.025  
0.40  
0.0157  
1.9  
0.0748  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
7
NCS21801, NCS21802, NCS21803, NCS21804  
PACKAGE DIMENSIONS  
TSOP5  
CASE 483  
ISSUE M  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
NOTE 5  
5X  
D
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE  
MINIMUM THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD  
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT  
EXCEED 0.15 PER SIDE. DIMENSION A.  
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL  
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.  
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2  
FROM BODY.  
0.20 C A B  
2X  
0.10  
T
M
5
4
3
2X  
0.20  
T
B
S
1
2
K
B
A
DETAIL Z  
G
A
MILLIMETERS  
TOP VIEW  
DIM  
A
B
C
D
MIN  
2.85  
1.35  
0.90  
0.25  
MAX  
3.15  
1.65  
1.10  
0.50  
DETAIL Z  
J
G
H
J
K
M
S
0.95 BSC  
C
0.01  
0.10  
0.20  
0
0.10  
0.26  
0.60  
10  
3.00  
0.05  
H
SEATING  
PLANE  
END VIEW  
C
_
_
SIDE VIEW  
2.50  
SOLDERING FOOTPRINT*  
1.9  
0.074  
0.95  
0.037  
2.4  
0.094  
1.0  
0.039  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
8
NCS21801, NCS21802, NCS21803, NCS21804  
PACKAGE DIMENSIONS  
SC88/SC706/SOT363  
CASE 419B02  
ISSUE Y  
2X  
aaa H D  
NOTES:  
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-  
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.  
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF  
THE PLASTIC BODY AND DATUM H.  
5. DATUMS A AND B ARE DETERMINED AT DATUM H.  
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE  
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.  
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.  
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN  
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-  
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER  
RADIUS OF THE FOOT.  
D
GAGE  
PLANE  
6
1
5
2
4
3
L
L2  
E1  
E
DETAIL A  
aaa C  
2X  
2X 3 TIPS  
bbb H D  
e
MILLIMETERS  
DIM MIN NOM MAX  
−−−  
INCHES  
MIN  
−−−  
NOM MAX  
−−− 0.043  
−−− 0.004  
6X b  
B
TOP VIEW  
A
−−−  
−−−  
1.10  
A1 0.00  
A2 0.70  
0.10 0.000  
M
ddd  
C A-B D  
0.90  
0.20  
0.15  
2.00  
2.10  
1.25  
0.65 BSC  
0.36  
1.00 0.027 0.035 0.039  
0.25 0.006 0.008 0.010  
0.22 0.003 0.006 0.009  
2.20 0.070 0.078 0.086  
2.20 0.078 0.082 0.086  
1.35 0.045 0.049 0.053  
0.026 BSC  
b
C
D
E
0.15  
0.08  
1.80  
2.00  
A2  
DETAIL A  
A
E1 1.15  
e
L
0.26  
0.46 0.010 0.014 0.018  
0.006 BSC  
L2  
0.15 BSC  
0.15  
aaa  
bbb  
ccc  
ddd  
0.006  
0.012  
0.004  
0.004  
0.30  
0.10  
0.10  
6X  
ccc C  
A1  
SEATING  
PLANE  
c
C
SIDE VIEW  
END VIEW  
RECOMMENDED  
SOLDERING FOOTPRINT*  
6X  
0.30  
6X  
0.66  
2.50  
0.65  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
9
NCS21801, NCS21802, NCS21803, NCS21804  
PACKAGE DIMENSIONS  
UDFN8, 2x2  
CASE 517AW  
ISSUE A  
A
B
E
NOTES:  
D
L
L
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINALS AND IS MEASURED BETWEEN  
0.15 AND 0.30 MM FROM THE TERMINAL  
TIP.  
L1  
PIN ONE  
REFERENCE  
DETAIL A  
ALTERNATE  
CONSTRUCTIONS  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
5. FOR DEVICE OPN CONTAINING W OPTION,  
DETAIL B ALTERNATE CONSTRUCTION IS  
2X  
0.10  
C
2X  
0.10  
C
NOT APPLICABLE.  
TOP VIEW  
MILLIMETERS  
MOLD CMPD  
DIM MIN  
MAX  
0.55  
0.05  
EXPOSED Cu  
A
A1  
A3  
b
D
D2  
E
E2  
e
L
0.45  
0.00  
DETAIL B  
A
0.13 REF  
0.10  
C
A3  
C
0.18  
0.30  
2.00 BSC  
A3  
A1  
1.50  
1.70  
0.08  
C
DETAIL B  
2.00 BSC  
A1  
SIDE VIEW  
0.80  
1.00  
NOTE 4  
ALTERNATE  
SEATING  
PLANE  
0.50 BSC  
CONSTRUCTION  
0.20  
0.45  
L1  
−−−  
0.15  
D2  
DETAIL A  
RECOMMENDED  
8X L  
SOLDERING FOOTPRINT*  
1
4
8X  
0.50  
1.73  
PACKAGE  
OUTLINE  
E2  
b
5
8
8X  
e
1.00  
2.30  
0.10 C A B  
e/2  
0.05  
C
NOTE 3  
BOTTOM VIEW  
1
8X  
0.30  
0.50  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
10  
NCS21801, NCS21802, NCS21803, NCS21804  
PACKAGE DIMENSIONS  
Micro8t  
CASE 846A02  
ISSUE J  
D
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE  
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED  
0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.  
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.  
H
E
E
MILLIMETERS  
INCHES  
NOM  
−−  
0.003  
0.013  
0.007  
0.118  
DIM  
A
A1  
b
c
D
E
MIN  
−−  
NOM  
−−  
MAX  
MIN  
−−  
MAX  
0.043  
0.006  
0.016  
0.009  
0.122  
0.122  
PIN 1 ID  
e
1.10  
0.15  
0.40  
0.23  
3.10  
3.10  
b 8 PL  
0.05  
0.25  
0.13  
2.90  
2.90  
0.08  
0.002  
0.010  
0.005  
0.114  
0.114  
0.33  
M
S
S
0.08 (0.003)  
T B  
A
0.18  
3.00  
3.00  
0.118  
e
L
0.65 BSC  
0.55  
4.90  
0.026 BSC  
0.021  
0.193  
SEATING  
PLANE  
0.40  
4.75  
0.70  
5.05  
0.016  
0.187  
0.028  
0.199  
T−  
H
E
A
0.038 (0.0015)  
L
A1  
c
RECOMMENDED  
SOLDERING FOOTPRINT*  
8X  
8X  
0.48  
0.80  
5.25  
0.65  
PITCH  
DIMENSION: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
11  
NCS21801, NCS21802, NCS21803, NCS21804  
PACKAGE DIMENSIONS  
TSSOP14 WB  
CASE 948G  
ISSUE C  
NOTES:  
14X K REF  
1. DIMENSIONING AND TOLERANCING PER  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
S
0.15 (0.006) T U  
N
0.25 (0.010)  
14  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL  
IN EXCESS OF THE K DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
8
2X L/2  
M
B
L
N
U−  
PIN 1  
IDENT.  
F
7
1
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
DETAIL E  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
S
K
0.15 (0.006) T U  
A
V−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
K1  
A
B
C
D
F
G
H
J
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION NN  
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
J1  
K
W−  
C
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
0.10 (0.004)  
0
8
0
8
_
_
_
_
SEATING  
PLANE  
T−  
H
G
DETAIL E  
D
SOLDERING FOOTPRINT  
7.06  
1
0.65  
PITCH  
01.34X6  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
www.onsemi.com  
12  
NCS21801, NCS21802, NCS21803, NCS21804  
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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