NCS4333DR2G [ONSEMI]
运算放大器，30 µV 偏移，0.07 µV/°C，低功耗，零漂移;
| 型号： | NCS4333DR2G |
| 厂家： | 
ONSEMI |
| 描述： | 运算放大器，30 µV 偏移，0.07 µV/°C，低功耗，零漂移 放大器 光电二极管 运算放大器 |
| 文件： | 总16页 (文件大小：640K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCS333, NCV333,
NCS2333, NCV2333,
NCS4333, NCV4333
10 mV Offset, 0.07 mV/5C,
Low Power, Zero-Drift
Operational Amplifier
www.onsemi.com
The NCS333 family of high precision op amps feature very low
input offset voltage and near−zero drift over time and temperature.
These low quiescent current amplifiers have high impedance inputs
with a common−mode range 100 mV beyond the rails as well as
rail−to−rail output swing within 50 mV of the rails. These op amps
operate over a wide supply range from 1.8 V to 5.5 V. The NCS333
family exhibits outstanding CMRR without the crossover associated
with traditional complementary input stages. The NCS333, as well as
the dual version, NCS2333, and the quad version, NCS4333, come in a
variety of packages and pinouts. Automotive qualified options are
available under NCV prefix.
5
5
1
1
SOT23−5
SN SUFFIX
CASE 483
SC70−5
SQ SUFFIX
CASE 419A
1
DFN−8
MSOP−8
DM SUFFIX
CASE 846A−02
MN SUFFIX
CASE 506BW
Features
• Low Offset Voltage: 10 mV max for NCS333, 30 mV max for
NCS2333 and NCS4333
• Zero Drift: 0.07 mV/°C max
8
14
• Low Noise: 1.1 mVpp, 0.1 Hz to 10 Hz
• Quiescent Current per Channel: 17 mA Typical at 3.3 V Supply
• Supply Voltage: 1.8 V to 5.5 V
1
1
SOIC−8
D SUFFIX
CASE 751
SOIC−14
D SUFFIX
CASE 751A
• Rail−to−Rail Input and Output
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Typical Applications
• Temperature Measurements
• Transducer Applications
• Current Sensing
End Products
• Battery Powered Instruments
• Electronic Scales
• Medical Instrumentation
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2016 − Rev. 10
NCS333/D
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
DEVICE MARKING INFORMATION
Single Channel Configuration
NCS333, NCV333
33EAYWG
33HMG
G
G
TSOP−5/SOT23−5
CASE 483
SC70−5
CASE 419A
Dual Channel Configuration
NCS2333, NCV2333
8
8
1
1
NCS
2333
ALYWG
G
2333
AYWG
G
N2333
ALYW
G
1
DFN8, 3x3, 0.65P
CASE 506BW
Micro8/MSOP8
CASE 846A−02
SOIC−8
CASE 751
Quad Channel Configuration
NCS4333, NCV4333
14
NCS4333G
AWLYWW
1
SOIC−14
CASE 751A
33E
33H
A
= Specific Device Code (SOT23−5)
= Specific Device Code (SC70−5)
= Assembly Location
= Year
Y
W
= Work Week
M
= Date Code
G or G = Pb−Free Package
(Note: Microdot may be in either location)
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2
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
PIN CONNECTIONS
Single Channel Configuration
NCS333, NCV333
1
2
3
5
4
OUT
VSS
IN+
IN+
VSS
IN−
VDD
OUT
1
2
3
VDD
5
4
IN−
SC70−5 / SC−88−5 / SOT−353−5
SOT23−5 / TSOP−5
Dual Channel Configuration
NCS2333, NCV2333
Quad Channel Configuration
NCS4333, NCV4333
1
OUT 1
IN− 1
IN+ 1
VDD
14
13
12
11
10
9
OUT 4
IN− 4
IN+ 4
2
−
−
+
+
3
4
5
6
7
VSS
IN+ 3
IN− 3
OUT 3
IN+ 2
IN− 2
+
−
+
−
8
OUT 2
ORDERING INFORMATION
†
Configuration
Automotive
Device
Package
Shipping
Single
No
NCS333SN2T1G
SOT23−5 / TSOP−5
3000 / Tape & Reel
3000 / Tape & Reel
NCS333ASN2T1G*
(In Development)
NCS333SQ3T2G
SC70−5 / SC−88−5 / SOT−353−5
3000 / Tape & Reel
3000 / Tape & Reel
NCS333ASQ3T2G*
(In Development)
Yes
No
NCV333SN2T1G*
(In Development)
SOT23−5 / TSOP−5
DFN8
3000 / Tape & Reel
3000 / Tape & Reel
Dual
NCS2333MNTXG*
(In Development)
NCS2333DR2G
NCS2333DMR2G
NCV2333DR2G
SOIC−8
MICRO−8
SOIC−8
2500 / Tape & Reel
4000 / Tape & Reel
2500 / Tape & Reel
4000 / Tape & Reel
Yes
NCV2333DMR2G*
(In Development)
MICRO−8
Quad
No
NCS4333DR2G
NCV4333DR2G
SOIC−14
SOIC−14
2500 / Tape & Reel
2500 / Tape & Reel
Yes
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact local sales office for more information
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3
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
ABSOLUTE MAXIMUM RATINGS
Over operating free−air temperature, unless otherwise stated.
Parameter
Rating
Unit
Supply Voltage
7
V
INPUT AND OUTPUT PINS
Input Voltage (Note 1)
(VSS) − 0.3 to (VDD) + 0.3
V
Input Current (Note 1)
10
mA
Output Short Circuit Current (Note 2)
TEMPERATURE
Continuous
Operating Temperature Range
Storage Temperature Range
Junction Temperature
−40 to +125
−65 to +150
+150
°C
°C
°C
ESD RATINGS (Note 3)
Human Body Model (HBM)
Machine Model (MM)
4000
200
V
V
V
Charged Device Model (CDM)
OTHER RATINGS
2000
Latch−up Current (Note 4)
MSL
100
mA
Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Input terminals are diode−clamped to the power−supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should
be current limited to 10 mA or less
2. Short−circuit to ground.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115)
4. Latch−up Current tested per JEDEC standard: JESD78.
THERMAL INFORMATION (Note 5)
Parameter
Symbol
Package
SOT23−5 / TSOP5
SC70−5 / SC−88−5 / SOT−353−5
Micro8 / MSOP8
SOIC−8
Value
290
425
298
250
130
216
Unit
Thermal Resistance,
Junction to Ambient
q
°C/W
JA
DFN−8
SOIC−14
2
5. As mounted on an 80x80x1.5 mm FR4 PCB with 650 mm and 2 oz (0.034 mm) thick copper heat spreader. Following JEDEC JESD/EIA
51.1, 51.2, 51.3 test guidelines
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Range
Unit
V
Supply Voltage (V − V
)
V
T
1.8 to 5.5
−40 to 105
−40 to 125
DD
SS
S
Specified Operating Range
NCS333
NCS333A, NCV333, NCx2333, NCx4333
°C
A
Input Common Mode Voltage Range
V
ICMR
V
SS
−0.1 to V +0.1
V
DD
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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4
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
ELECTRICAL CHARACTERISTICS: V = 1.8 V to 5.5 V
S
At T = +25°C, R = 10 kW connected to midsupply, V
= V
= midsupply, unless otherwise noted.
A
L
CM
OUT
Boldface limits apply over the specified temperature range, guaranteed by characterization and/or design.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Symbol
Conditions
Min
Typ
Max
Unit
mV
V
OS
V
= +5 V
NCS333
NCx2333, NCx4333
NCS333
NCx2333, V = 5 V
3.5
6.0
10
30
S
Offset Voltage Drift vs Temp
Offset Voltage Drift vs Supply
Input Bias Current
DV /DT
0.03
0.04
0.095
0.32
0.32
0.07
0.07
0.14
5
mV/°C
OS
S
NCx4333, V = 5 V
S
DV /DV
NCS333
Full temperature range
mV/V
OS
S
NCx2333, NCx4333
T = +25°C
A
5
Full temperature range
NCS333
12.6
200
400
I
IB
T = +25°C
A
60
60
pA
NCx2333, NCx4333
Full temperature range
+400
50
Input Offset Current
I
T = +25°C
NCS333
400
800
pA
dB
OS
A
NCx2333, NCx4333
50
Common Mode Rejection Ratio
CMRR
V
− 0.1 < V
<
V
S
V
S
V
S
V
S
= 1.8 V
= 3.3 V
= 5.0 V
= 5.5 V
111
118
123
127
180
90
SS
CM
V
DD
+ 0.1
106
Input Resistance
Input Capacitance
R
C
Differential
Common Mode
GW
IN
IN
NCS333
Differential
Common Mode
Differential
2.3
4.6
4.1
7.9
pF
NCx2333, NCx4333
Common Mode
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
Open Loop Output Impedance
Output Voltage High,
A
V
+ 100 mV < V < V − 100 mV
106
145
300
10
dB
W
VOL
SS
O
DD
Z
f = UGBW, I = 0 mA
out−OL
O
V
T = +25°C
A
50
70
50
70
mV
OH
Referenced to V
DD
Full temperature range
Output Voltage Low,
Referenced to V
V
T = +25°C
A
10
mV
mA
OL
SS
Full temperature range
Output Current Capability
I
Sinking Current
NCS333
25
O
NCx2333, NCx4333
11
5.0
Sourcing Current
Capacitive Load Drive
C
See Figure 13
L
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5
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
ELECTRICAL CHARACTERISTICS: V = 1.8 V to 5.5 V
S
At T = +25°C, R = 10 kW connected to midsupply, V
= V
= midsupply, unless otherwise noted.
A
L
CM
OUT
Boldface limits apply over the specified temperature range, guaranteed by characterization and/or design.
Parameter
NOISE PERFORMANCE
Voltage Noise Density
Voltage Noise
Symbol
Conditions
Min
Typ
Max
Unit
e
N
f
IN
= 1 kHz
62
1.1
0.5
350
135
nV / √Hz
e
P−P
f
f
= 0.1 Hz to 10 Hz
= 0.01 Hz to 1 Hz
mV
PP
IN
IN
Current Noise Density
Channel Separation
i
N
f
IN
= 10 Hz
fA / √Hz
NCx2333, NCx4333
dB
DYNAMIC PERFORMANCE
Gain Bandwidth Product
GBWP
C = 100 pF
NCS333, NCx4333
NCx2333
350
270
18
kHz
L
Gain Margin
A
M
C = 100 pF
dB
°
L
Phase Margin
f
M
C = 100 pF
55
L
Slew Rate
SR
G = +1
0.15
V/ms
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
NCS333
Full temperature
106
130
130
dB
range
NCx2333, NCx4333,
NCV333
T = +25°C
A
106
Full temperature range
98
Turn−on Time
t
V
= 5 V
100
17
ms
ON
S
Quiescent Current
I
Q
No load, per channel
1.8 V ≤ V ≤ 3.3 V
25
27
33
35
mA
S
3.3 V < V ≤ 5.5 V
21
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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6
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
TYPICAL CHARACTERISTICS
120
100
80
60
40
20
0
120
105
90
120
110
100
90
T = 25°C
Phase Margin
80
75
70
Gain
60
60
50
45
40
C = 100 pF
R = 10 kW
L
30
30
L
20
T = 25°C
−20
−40
15
0
10
0
10
100
1k
10k
100k
1M
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 1. Open Loop Gain and Phase Margin
vs. Frequency
Figure 2. CMRR vs. Frequency
120
3
2
1
0
T = 25°C
T = 25°C
V
V
= 5.5 V, V
= 1.8 V, V
S
OH
100
80
S
OH
+PSRR
−PSRR
60
V
= 1.8 V, V
S
S
OL
40
−1
20
0
−2
−3
V
= 5.5 V, V
3
OL
10
100
1k
10k
100k
1M
0
1
2
4
5
6
7
8
9
10
FREQUENCY (Hz)
OUTPUT CURRENT (mA)
Figure 3. PSRR vs. Frequency
Figure 4. Output Voltage Swing vs. Output
Current
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7
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
TYPICAL CHARACTERISTICS
200
150
100
50
200
T = 25°C
S
150
V
= 1.8 V
100
50
I
I
IB+
I
I
IB+
IB−
0
0
IB−
−50
−100
−50
−100
T = 25°C
S
V
= 5 V
−150
−200
−150
−200
−0.2
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
COMMON MODE VOLTAGE (V)
−40 −20
0
20
40
60
80
100
TEMPERATURE (°C)
Figure 5. Input Bias Current vs. Common
Mode Voltage
Figure 6. Input Bias Current vs. Temperature
5
4
30
25
20
15
4
3
V
= 5.5 V
S
Input
V
V
= 5.0 V
= 3.3 V
3
2
1
S
S
2
Output
0
1
0
V
S
= 1.8 V
−1
−2
10
V
= 5.0 V
A = +1
R = 10 kW
S
−1
V
5
0
−3
−4
−2
−3
L
Per Channel
−40 −20
0
20
40
60
80
100
−100
0
100
200
TIME (ms)
300
400
TEMPERATURE (°C)
Figure 7. Quiescent Current vs. Temperature
Figure 8. Large Signal Step Response
0.20
0.15
0.10
0.05
0
1.0
3.0
0.5
0
2.5
2.0
Input
Input
−0.5
−1.0
−1.5
−2.0
1.5
1.0
0.5
0
V
= 5.0 V
S
A = −10
V
= 5.0 V
V
S
R = 10 kW
A = −1
L
V
Output
R = 10 kW
L
−0.05
Output
10
−0.10
−0.15
−2.5
−3.0
−0.5
−1.0
−10
0
20
30
TIME (ms)
TIME (50 ms/div)
Figure 9. Small Signal Step Response
Figure 10. Positive Overvoltage Recovery
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8
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
TYPICAL CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
0.5
0
500
400
300
200
1.0
T = 25°C
R = 10 kW
0.5
0
L
Output
−0.5
−1.0
−1.5
−2.0
V
= 5.0 V
S
A = −10
V
R = 10 kW
L
Input
100
0
−0.5
−1.0
−2.5
−3.0
1
0
1
10
100
TIME (50 ms/div)
GAIN (V/V)
Figure 11. Negative Overvoltage Recovery
Figure 12. Setting Time to 0.1% vs.
Closed−Loop Gain
65
1000
750
500
250
0
60
55
V
= V /2
S
CM
R = 10 kW
T = 25°C
L
50
45
T = 25°C
40
35
30
25
20
15
10
−250
−500
−750
5
0
−1000
10
100
1000
1
2
3
4
5
6
7
8
9
10
LOAD CAPACITANCE (pF)
TIME (s)
Figure 13. Small−Signal Overshoot vs. Load
Capacitance
Figure 14. 0.1 Hz to 10 Hz Noise
1000
1000
T = 25°C
T = 25°C
100
100
10
10
1
10
100
1000
10,000
10
100
1000
10,000
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 15. Voltage Noise Density vs.
Frequency
Figure 16. Current Noise Density vs.
Frequency
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9
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
APPLICATIONS INFORMATION
APPLICATION CIRCUITS
to reduce power loss across the resistor. The op amp
amplifies the voltage drop across the sense resistor with a
gain set by external resistors R1, R2, R3, and R4 (where R1
= R2, R3 = R4). Precision resistors are required for high
accuracy, and the gain is set to utilize the full scale of the
ADC for the highest resolution.
Low−Side Current Sensing
The goal of low−side current sensing is to detect
over−current conditions or as a method of feedback control.
A sense resistor is placed in series with the load to ground.
Typically, the value of the sense resistor is less than 100 mW
R3
VLOAD
VDD
VDD
VDD
Load
R1
Microcontroller
+
RSENSE
ADC
control
−
R2
R4
Figure 17. Low−Side Current Sensing
Differential Amplifier for Bridged Circuits
produced is relatively small and needs to be amplified before
going into an ADC. Precision amplifiers are recommended
in these types of applications due to their high gain, low
noise, and low offset voltage.
Sensors to measure strain, pressure, and temperature are
often configured in a Wheatstone bridge circuit as shown in
Figure 18. In the measurement, the voltage change that is
VDD
VDD
−
+
Figure 18. Bridge Circuit Amplification
EMI Susceptibility and Input Filtering
General Layout Guidelines
Op amps have varying amounts of EMI susceptibility.
Semiconductor junctions can pick up and rectify EMI
signals, creating an EMI−induced voltage offset at the
output, adding another component to the total error. Input
pins are the most sensitive to EMI. The NCS333 op amp
family integrates low−pass filters to decrease sensitivity to
EMI.
To ensure optimum device performance, it is important to
follow good PCB design practices. Place 0.1 mF decoupling
capacitors as close as possible to the supply pins. Keep traces
short, utilize a ground plane, choose surface−mount
components, and place components as close as possible to
the device pins. These techniques will reduce susceptibility
to electromagnetic interference (EMI). Thermoelectric
effects can create an additional temperature dependent
offset voltage at the input pins. To reduce these effects, use
metals with low thermoelectric−coefficients and prevent
temperature gradients from heat sources or cooling fans.
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10
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
G
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
5
4
BURRS.
−B−
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
1
2
3
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
0.026 BSC
0.65 BSC
M
M
B
D 5 PL
0.2 (0.008)
---
0.004
0.004
0.004
0.010
0.012
---
0.10
0.10
0.10
0.25
0.30
K
N
S
N
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
J
C
K
H
SOLDER FOOTPRINT
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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11
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
NOTE 5
5X
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
0.20 C A B
2X
0.10
T
M
5
4
3
2X
0.20
T
B
S
1
2
K
B
A
DETAIL Z
G
A
MILLIMETERS
TOP VIEW
DIM
A
B
MIN
3.00 BSC
1.50 BSC
MAX
DETAIL Z
C
D
0.90
0.25
1.10
0.50
J
G
H
J
K
M
S
0.95 BSC
C
0.01
0.10
0.20
0
0.10
0.26
0.60
0.05
H
SEATING
PLANE
END VIEW
C
10
_
_
SIDE VIEW
2.50
3.00
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
12
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
PACKAGE DIMENSIONS
DFN8, 3x3, 0.65P
CASE 506BW
ISSUE O
NOTES:
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM THE TERMINAL TIP.
L
L
L1
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
DETAIL A
OPTIONAL
CONSTRUCTIONS
E
MILLIMETERS
PIN ONE
DIM MIN
0.80
A1 0.00
MAX
1.00
0.05
REFERENCE
A
2X
EXPOSED Cu
MOLD CMPD
0.10
C
A3
b
0.20 REF
0.25
0.35
D
3.00 BSC
2.50
3.00 BSC
1.75
0.65 BSC
2X
0.10
C
C
D2 2.30
E
E2 1.55
e
K
L
TOP VIEW
DETAIL B
A
C
DETAIL B
(A3)
OPTIONAL
0.05
CONSTRUCTIONS
0.20
0.35
−−−
0.45
0.15
L1 0.00
0.05
C
RECOMMENDED
SOLDERING FOOTPRINT*
NOTE 4
SEATING
PLANE
A1
SIDE VIEW
D2
8X
0.62
DETAIL A
2.50
1
4
8X
L
E2
3.30
1.75
8X
K
8
5
1
8X b
08.4X0
e/2
0.10 C A B
0.65
PITCH
e
DIMENSIONS: MILLIMETERS
NOTE 3
C
0.05
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
13
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
PACKAGE DIMENSIONS
Micro8t
CASE 846A−02
ISSUE J
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
H
E
E
MILLIMETERS
INCHES
NOM
−−
0.003
0.013
0.007
0.118
DIM
A
A1
b
c
D
MIN
−−
NOM
−−
MAX
MIN
−−
MAX
0.043
0.006
0.016
0.009
0.122
0.122
PIN 1 ID
e
1.10
0.15
0.40
0.23
3.10
3.10
b 8 PL
0.05
0.25
0.13
2.90
2.90
0.08
0.002
0.010
0.005
0.114
0.114
0.33
M
S
S
0.08 (0.003)
T B
A
0.18
3.00
E
3.00
0.118
e
L
H
E
0.65 BSC
0.55
4.90
0.026 BSC
0.021
0.193
SEATING
PLANE
0.40
4.75
0.70
5.05
0.016
0.187
0.028
0.199
−T−
A
0.038 (0.0015)
L
A1
c
RECOMMENDED
SOLDERING FOOTPRINT*
8X
8X
0.48
0.80
5.25
0.65
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
14
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
−X−
A
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
MILLIMETERS
DIM MIN MAX
INCHES
G
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
1.27 BSC
0.050 BSC
−Z−
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
0.10 (0.004)
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
SOLDERING FOOTPRINT*
1.52
0.060
7.0
4.0
0.275
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
15
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE K
NOTES:
D
A
B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
14
8
7
A3
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
L
DETAIL A
1
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
13X b
M
M
B
0.25
A
A1
A3
b
D
E
1.35
0.10
0.19
0.35
8.55
3.80
1.75 0.054 0.068
0.25 0.004 0.010
0.25 0.008 0.010
0.49 0.014 0.019
8.75 0.337 0.344
4.00 0.150 0.157
M
S
S
B
0.25
C A
DETAIL A
h
A
X 45
_
e
H
h
L
1.27 BSC
0.050 BSC
6.20 0.228 0.244
0.50 0.010 0.019
1.25 0.016 0.049
5.80
0.25
0.40
0
M
A1
e
M
7
0
7
_
_
_
_
SEATING
PLANE
C
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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