NCV1406SNT1G [ONSEMI]
25 V/25 mA PFM Step−Up DC−DC Converter;型号: | NCV1406SNT1G |
厂家: | ONSEMI |
描述: | 25 V/25 mA PFM Step−Up DC−DC Converter |
文件: | 总23页 (文件大小:216K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NCP1406
25 V/25 mA PFM Step−Up
DC−DC Converter
The NCP1406 is a monolithic PFM step−up DC−DC converter.
This device is designed to boost single Lithium or two cells AA/AAA
battery voltage up to 25 V (with internal MOSFET) output for
handheld applications. A pullup Chip Enable feature is built−in with
this device to extend battery−operating life. In addition to standard
boost converter topologies, this device can be configured for
voltage−inverting and step−down applications. This device is
available in space−saving TSOP−5 package. With its small footprint,
the device is also ideal for generating a boosted voltage from a 3.3 V
or 5.0 V power rail.
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MARKING
DIAGRAM
5
5
1
DAMAYWG
G
TSOP−5/SOT23−5/SC59−5
SN SUFFIX
1
Features
CASE 483
• 85% Efficiency at V
= 25 V, I
= 25 mA, V = 5.0 V
OUT IN
OUT
• Low Operating Current of 15 mA (Not Switching)
• Low Shutdown Current of 0.3 mA
• Low Startup Voltage of 1.8 V Typical at 0 mA
• Output Voltage up to 25 V with Built−in 26 V MOSFET Switch
• PFM Switching Frequency up to 1.0 MHz
• Chip Enable
DAM = Device Marking
A
Y
W
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
• Output Voltage Soft−Start
PIN CONNECTIONS
• Feedback Pin Open/Short Circuit Protection
• Input Undervoltage Lockout
• Thermal Shutdown
• Low Profile and Minimum External Parts
• Micro Miniature TSOP−5 Package
• Pb−Free Package is Available
CE
FB
5
LX
1
2
3
VDD
4
GND
(Top View)
Typical Applications
• LCD Bias
ORDERING INFORMATION
• White LED Driver
• OLED Driver
• Personal Digital Assistants (PDA)
• Digital Still Camera
• Cellular Telephone
• Hand−Held Games
• Hand−Held Instrument
Device
Package
Shipping†
NCP1406SNT1
TSOP−5
3000 Tape & Reel
3000 Tape & Reel
NCP1406SNT1G
TSOP−5
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 2
NCP1406/D
NCP1406
L1 8.2 mH
D1
MBR0530T1
V
OUT
V
IN
25 V
2.0 V to 5.5 V
CE
1
LX
5
C
3.3 mF
2
C
1
C
3
10 mF
FB
2
82 pF
R
R
2.2 MW
110 kW
1
VDD
3
GND
4
Enable
2
R
R
2
1
+ 1.19ǒ ) 1Ǔ
V
OUT
Figure 1. Typical 25 V Step−Up Application Circuit
L1 8.2 mH
D1
MBR0520LT1
V
OUT
V
IN
15 V
2.0 V to 5.5 V
CE
1
LX
5
C
4.7 mF
2
C
1
C
3
10 mF
FB
2
68 pF
R
R
1.3 MW
1
VDD
3
GND
4
Enable
110 kW
2
R
1
+ 1.19ǒ ) 1Ǔ
V
OUT
R
2
Figure 2. Typical 15 V Step−Up Application Circuit
L1 8.2 mH
D1
MBR0520LT1
V
OUT
V
IN
8 V
2.0 V to 5.5 V
CE
1
LX
5
C
4.7 mF
2
C
1
C
3
10 mF
FB
2
12 pF
R
R
620 kW
1
VDD
3
GND
4
Enable
110 kW
2
R
1
+ 1.19ǒ ) 1Ǔ
V
OUT
R
2
Figure 3. Typical 8.0 V Step−Up Application Circuit
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2
NCP1406
LX
VDD
FB Fault
Protection
TSD
UVLO
PFM
Comparator
Driver
PFM ON/OFF
Timing
−
+
FB
Control
+
−
Vref
Soft−Start
GND
CE
Figure 4. Representative Block Diagram
PIN FUNCTION DESCRIPTION
Pin
Symbol
Description
1
CE
Chip Enable Pin
(1) The chip is enabled if a voltage which is equal to or greater than 0.9 V is applied.
(2) The chip is disabled if a voltage which is less than 0.3 V is applied.
(3) The chip will be enabled if it is left floating.
2
3
4
5
FB
VDD
GND
LX
PFM comparator inverting input, and is connected to off−chip resistor divider which sets output voltage.
Power supply pin for internal circuit.
Ground pin.
External inductor connection pin.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage (Pin 3)
VDD
−0.3 to 6.0
V
Input/Output Pin
LX (Pin 5)
LX Peak Sink Current
FB (Pin 2)
V
I
−0.3 to 27
1.5
−0.3 to 6.0
V
A
V
LX
LX
V
FB
CE (Pin 1)
Input Voltage Range
V
R
−0.3 to 6.0
V
CE
Power Dissipation and Thermal Characteristics
Maximum Power Dissipation @ T = 25_C
P
D
500
250
mW
_C/W
_C
_C
_C
A
Thermal Resistance, Junction−to−Air
Operating Ambient Temperature Range
Operating Junction Temperature Range
Storage Temperature Range
q
JA
T
−40 to +85
−40 to +150
−55 to +150
A
T
J
T
stg
Maximumratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values
(not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage
may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) "2.0 kV per JEDEC standard: JESD22−A114 for all pins.
Machine Model (MM) "200 V per JEDEC standard: JESD22−A115 for all pins.
2. Latchup Current Maximum Rating: "150 mA per JEDEC standard: JESD78.
3. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
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3
NCP1406
DISSIPATION RATINGS
Power Rating
Derating Factor
Power Rating
Power Rating
@T
ꢀ
255C
@T
ꢁ
255C
@T = 705C
@T = 855C
Package
A
A
A
A
TSOP−5
500 mW
4.0 mW/°C
320 mW
260 mW
ELECTRICAL CHARACTERISTICS (V
otherwise noted.)
= 25 V, T = −40_C to +85_C for min/max values, typical values are at T = 25_C, unless
OUT
A
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON/OFF TIMING CONTROL
Minimum Off Time (V = 3.0 V, V = 0 V)
t
off
0.08
0.58
84
−
0.13
0.90
90
0.20
1.40
96
ms
ms
DD
FB
Maximum On Time (Current Not Asserted)
Maximum Duty Cycle
t
on
D
MAX
%
Minimum Startup Voltage (I
= 0 mA)
V
start
1.8
1.6
1.7
3.0
2.0
−
V
OUT
Minimum Startup Voltage Temperature Coefficient (T = −40 to +85°C)
DV
−
mV/°C
V
A
start
Minimum Hold Voltage (I
= 0 mA)
V
hold
−
1.9
8.0
OUT
Soft−Start Time
t
SS
−
ms
LX (PIN 5)
Internal Switch Voltage (Note 4) (Note 5)
LX Pin On−State Resistance (V = 0.4 V, V = 5.0 V)
V
−
−
−
−
26
−
V
W
A
LX
R
sw(on)
0.7
0.80
LX
DD
Current Limit (When I reaches I , the LX switch is turned off by the LX switch
I
LIM
−
LX
LIM
protection circuit) (Note 5)
Off−State Leakage Current (V = 26 V)
I
−
0.1
1.0
mA
LX
LKG
CE (PIN 1)
CE Input Voltage (V = 3.0 V, V = 0 V)
DD
FB
High State, Device Enabled
Low State, Device Disabled
V
V
0.9
−
−
−
−
0.3
V
V
CE(high)
CE(low)
CE Input Current
High State, Device Enabled (V = V = 5.5 V)
I
−
−500
10
−150
500
−
nA
nA
DD
CE
CE(high)
Low State, Device Disabled (V = 5.5 V, V = V = 0 V)
I
CE(low)
DD
CE
FB
TOTAL DEVICE
Supply Voltage
V
1.4
−
−
5.5
1.3
V
V
V
DD
Undervoltage Lockout (V Falling)
V
UVLO
1.0
DD
Feedback Voltage
T = 25°C
A
V
1.178
1.170
1.190
1.190
1.202
1.210
A
FB
T = −40 to +85°C
Feedback Pin Bias Current (V = 1.19 V)
I
−
−
−
−
−
−
15
0.7
15
45
1.5
25
1.3
−
nA
mA
mA
mA
°C
FB
FB
Operating Current 1 (V = 0 V, V = V = 3.0 V, Maximum Duty Cycle)
I
I
I
FB
DD
CE
DD1
DD2
OFF
Operating Current 2 (V = V = V = 3.0 V, Not Switching)
DD
CE
FB
Off−State Current (V = 5.0 V, V = 0 V)
0.3
140
10
DD
CE
Thermal Shutdown (Note 5)
T
SD
Thermal Shutdown Hysteresis (Note 5)
4. Recommended maximum V up to 25 V.
T
−
°C
SDHYS
OUT
5. Guaranteed by design, not tested.
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NCP1406
TYPICAL CHARACTERISTICS
26.0
25.5
25.0
24.5
24.0
100
5.0 V
4.2 V
3.7 V
90
5.0 V
4.2 V
V
= 25 V
80
70
60
OUT
V
= 25 V
OUT
L1 = 8.2 mH, Sumida
CR43−8R2MC
C1 = 10 mF
C2 = 3.3 mF
C3 = 82 pF
3.0 V
L1 = 8.2 mH, Sumida
CR43−8R2MC
C1 = 10 mF
C2 = 3.3 mF
C3 = 82 pF
3.0 V
V
IN
= 2.4 V
V
IN
= 2.4 V
3.7 V
T
A
= 25°C
T
A
= 25°C
Figure 1
Figure 1
0
10
20
30
40
50
0
10
20
30
40
50
I , OUTPUT CURRENT (mA)
OUT
I , OUTPUT CURRENT (mA)
OUT
Figure 5. Output Voltage versus Output Current
Figure 6. Efficiency versus Output Current
(VOUT = 25 V, L = 8.2 ꢀ H)
(VOUT = 25 V, L = 8.2 ꢀ H)
16.0
15.5
15.0
14.5
14.0
100
90
80
70
60
V
= 15 V
OUT
L1 = 8.2 mH, Sumida
CR43−8R2MC
C1 = 10 mF
C2 = 4.7 mF
C3 = 68 pF
5.0 V
4.2 V
3.7 V
3.7 V
3.0 V
T
= 25°C
A
Figure 2
3.0 V
V
= 15 V
OUT
2.4 V
L1 = 8.2 mH, Sumida
CR43−8R2MC
C1 = 10 mF
C2 = 4.7 mF
C3 = 68 pF
5.0 V
2.4 V
V
IN
= 2.0 V
V
IN
= 2.0 V
4.2 V
T
A
= 25°C
Figure 2
0
20
I
40
60
80
0
20
I
40
60
80
, OUTPUT CURRENT (mA)
, OUTPUT CURRENT (mA)
OUT
OUT
Figure 7. Output Voltage versus Output Current
Figure 8. Efficiency versus Output Current
(VOUT = 15 V, L = 8.2 ꢀ H)
(VOUT = 15 V, L = 8.2 ꢀ H)
9.0
8.5
8.0
7.5
7.0
100
90
80
70
60
V
= 8.0 V
OUT
L1 = 8.2 mH, Sumida CR43−8R2MC
C1 = 10 mF
C2 = 4.7 mF
C3 = 12 pF
5.0 V
4.2 V
T
= 25°C
3.7 V
A
3.0 V
4.2 V 5.0 V
3.7 V
Figure 3
2.4 V
V
IN
= 2.0 V
V
= 8.0 V
OUT
L1 = 8.2 mH, Sumida
CR43−8R2MC
C1 = 10 mF
2.4 V
50
V
= 2.0 V
3.0 V
C2 = 4.7 mF
C3 = 12 pF
= 25°C
Figure 3
IN
T
A
0
25
75
100
125
150
0
25
50
75
100
125
150
I , OUTPUT CURRENT (mA)
OUT
I , OUTPUT CURRENT (mA)
OUT
Figure 10. Efficiency versus Output Current
Figure 9. Output Voltage versus Output Current
(VOUT = 8.0 V, L = 8.2 ꢀ H)
(VOUT = 8.0 V, L = 8.2 ꢀ H)
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NCP1406
TYPICAL CHARACTERISTICS
26.0
25.5
25.0
24.5
24.0
100
V
= 25 V
OUT
L1 = 10 mH, Sumida
CMD4D11−100MC
C1 = 10 mF
C2 = 3.3 mF
C3 = 150 pF
90
80
70
60
5.0 V
4.2 V
3.7 V
T
= 25°C
A
Figure 1
V
= 25 V
OUT
2.4 V
L1 = 10 mH, Sumida
CMD4D11−100MC
C1 = 10 mF
C2 = 3.3 mF
C3 = 150 pF
3.7 V
4.2 V
5.0 V
3.0 V
3.0 V
V
IN
= 2.0 V
2.4 V
T
A
= 25°C
Figure 1
V
IN
= 2.0 V
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I , OUTPUT CURRENT (mA)
OUT
I , OUTPUT CURRENT (mA)
OUT
Figure 11. Output Voltage versus Output Current
Figure 12. Efficiency versus Output Current
(VOUT = 25 V, L = 10 ꢀ H)
(VOUT = 25 V, L = 10 ꢀ H)
16.0
15.5
15.0
14.5
14.0
100
90
80
70
60
V
= 15 V
OUT
L1 = 10 mH, Sumida
CMD4D11−100MC
C1 = 10 mF
C2 = 4.7 mF
C3 = 120 pF
5.0 V
4.2 V
3.7 V
3.0 V
T
= 25°C
A
3.7 V
3.0 V
Figure 2
V
= 15 V
OUT
2.4 V
= 2.0 V
L1 = 10 mH, Sumida
CMD4D11−100MC
C1 = 10 mF
C2 = 4.7 mF
C3 = 120 pF
5.0 V
4.2 V
2.4 V
V
IN
V
IN
= 2.0 V
T
A
= 25°C
Figure 2
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I , OUTPUT CURRENT (mA)
OUT
I , OUTPUT CURRENT (mA)
OUT
Figure 13. Output Voltage versus Output Current
Figure 14. Efficiency versus Output Current
(VOUT = 15 V, L = 10 ꢀ H)
(VOUT = 15 V, L = 10 ꢀ H)
9.0
8.5
8.0
7.5
7.0
100
90
80
70
60
V
= 8.0 V
OUT
L1 = 10 mH, Sumida CMD4D11−100MC
C1 = 10 mF
C2 = 4.7 mF
C3 = 20 pF
5.0 V
4.2 V
3.7 V
T
= 25°C
A
4.2 V
5.0 V
3.0 V
2.4 V
Figure 3
3.7 V
V
IN
= 2.0 V
V
= 8.0 V
OUT
L1 = 10 mH, Sumida
CMD4D11−100MC
C1 = 10 mF
2.4 V
3.0 V
C2 = 4.7 mF
C3 = 20 pF
V
= 2.0 V
IN
T
= 25°C
A
Figure 3
0
25
50
75
100
0
25
50
75
100
I , OUTPUT CURRENT (mA)
OUT
I , OUTPUT CURRENT (mA)
OUT
Figure 16. Efficiency versus Output Current
Figure 15. Output Voltage versus Output Current
(VOUT = 8.0 V, L = 10 ꢀ H)
(VOUT = 8.0 V, L = 10 ꢀ H)
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NCP1406
TYPICAL CHARACTERISTICS
1.22
1.20
1.18
1.16
1.14
100
90
80
70
V
V
= 3.0 V
= 0 V
DD
FB
V
= 3.0 V
75
DD
60
−50
−50
−25
0
25
50
100
100
100
−25
0
25
50
75
100
100
100
T , AMBIENT TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
A
A
Figure 17. Feedback Voltage versus
Ambient Temperature
Figure 18. Maximum Duty Cycle versus
Ambient Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.18
0.16
0.14
0.12
0.10
0.08
V
DD
= 3.0 V
V
= 3.0 V
DD
−50
−25
0
25
50
75
−50
−25
0
25
50
75
T , AMBIENT TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
A
A
Figure 19. Maximum On Time versus
Ambient Temperature
Figure 20. Minimum Off Time versus
Ambient Temperature
1000
900
800
700
600
500
25
20
15
10
5
V
V
= V = 3.0 V
DD
FB
CE
= 0 V
V
DD
= V = V = 3.0 V
CE FB
0
−50
−25
0
25
50
75
−50
−25
0
25
50
75
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 22. Operating Current 2 versus
Ambient Temperature
Figure 21. Operating Current 1 versus
Ambient Temperature
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NCP1406
TYPICAL CHARACTERISTICS
1000
800
600
400
200
0
50
40
30
20
10
V
V
= 5.0 V
= 0 V
DD
CE
V
= V = 5.5 V
DD
CE
0
−50
−25
0
25
50
75
100
100
100
−50
−25
0
25
50
75
100
100
100
T , AMBIENT TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
A
A
Figure 23. Off−State Current versus
Ambient Temperature
Figure 24. CE “High” Input Current versus
Ambient Temperature
−500
−400
−300
−200
−100
0
2.4
2.2
2.0
1.8
1.6
1.4
V
V
= 5.5 V
= 0 V
DD
CE
I
= 0 mA
OUT
−50
−25
0
25
50
75
−50
−25
0
25
50
75
T , AMBIENT TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
A
A
Figure 25. CE “Low” Input Current versus
Ambient Temperature
Figure 26. Minimum Startup Voltage versus
Ambient Temperature
1.3
1.2
1.1
1.0
0.9
0.8
6
5
4
3
2
1
0
−50
−25
0
25
50
75
−50
−25
0
25
50
75
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 28. Soft−start Time versus
Ambient Temperature
Figure 27. Undervoltage Lockout Voltage versus
Ambient Temperature
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NCP1406
TYPICAL CHARACTERISTICS
0.5
0.4
0.3
0.2
0.1
0
1.1
V
= 25 V
OUT
L1 = 8.2 mH
D1 = MBR0530LT1
C1 = 10 mF
C2 = 3.3 mF
C3 = 82 pF
R1 = 2.2 MW
R2 = 110 kW
1.0
0.9
0.8
0.7
0.6
T = 25°C
A
1
2
3
4
5
6
−50
−25
0
25
50
75
100
100
100
V
, INPUT VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
IN
A
Figure 29. No Load Input Current versus
Input Voltage
Figure 30. Current Limit versus
Ambient Temperature
1.4
1.2
1.0
0.8
0.6
0.4
1.4
1.2
1.0
0.8
0.6
0.4
1.8 V
2.0 V
2.4 V
3.0 V
3.7 V
T = 85°C
A
T = 25°C
A
V
= 5.0 V
DD
T = −40°C
A
1
2
3
4
5
−50
−25
0
25
50
6
75
V
IN
, INPUT VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
A
Figure 31. Switch−ON Resistance versus
Input Voltage
Figure 32. Switch−ON Resistance versus
Ambient Temperature
1000
800
600
400
200
0
50
40
30
20
10
0
V
DD
V
LX
V
CE
= 3.0 V
= 26 V
= 0 V
V
DD
V
FB
= 3.0 V
= 1.19 V
−50
−25
0
25
50
75
100
−50
−25
0
25
50
75
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 34. Feedback Pin Bias Current versus
Ambient Temperature
Figure 33. LX Pin OFF−State Leakage Current
versus Ambient Temperature
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NCP1406
TYPICAL CHARACTERISTICS
L1 = 8.2 mH, C1 = 10 mF, C2 = 3.3 mF, V = 3.7 V
L1 = 8.2 mH, C1 = 10 mF, C2 = 4.7 mF, V = 3.7 V
IN
IN
1. V
= 25 V (AC Coupled), 100 mV/div
1. V
= 15 V (AC Coupled), 100 mV/div
OUT
OUT
2. I
= 1.0 mA to 15 mA, 20 mA/div
2. I
= 1.0 mA to 20 mA, 20 mA/div
OUT
OUT
Figure 35. Load Transient Response (VOUT = 25 V)
Figure 36. Load Transient Response (VOUT = 15 V)
L1 = 8.2 mH, C1 = 10 mF, C2 = 3.3 mF, I
= 15 mA
L1 = 8.2 mH, C1 = 10 mF, C2 = 4.7 mF, I
= 15 mA
OUT
OUT
1. V
= 25 V (AC Coupled), 100 mV/div
1. V
= 15 V (AC Coupled), 100 mV/div
OUT
OUT
2. V = 3.0 V to 4.0 V, 2.0 V/div
2. V = 3.0 V to 4.0 V, 2.0 V/div
IN
IN
Figure 37. Line Transient Response (VOUT = 25 V)
Figure 38. Line Transient Response (VOUT = 15 V)
L1 = 8.2 mH, C1 = 10 mF, C2 = 3.3 mF, V = 4.2 V,
L1 = 8.2 mH, C1 = 10 mF, C2 = 3.3 mF, V = 4.2 V,
IN
IN
V
OUT
= 25 V, I
= 5.0 mA
V
OUT
= 25 V, I
= 30 mA
OUT
OUT
1. V , 10 V/div
1. V , 10 V/div
LX
LX
2. I , 200 mA/div
2. I , 200 mA/div
L
L
3. V , 50 mV/div
ripple
3. V , 50 mV/div
ripple
Figure 39. Operating Waveforms (Light Load)
Figure 40. Operating Waveforms (Heavy Load)
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10
NCP1406
TYPICAL CHARACTERISTICS
L1 = 8.2 mH, C1 = 10 mF, C2 = 3.3 mF, V = 4.2 V,
L1 = 8.2 mH, C1 = 10 mF, C2 = 4.7 mF, V = 4.2 V,
IN
IN
I
= 20 mA
I
= 25 mA
OUT
OUT
1. V , 0 V to 1.0 V to 0 V, 1.0 V/div
1. V , 0 V to 1.0 V to 0 V, 1.0 V/div
CE
CE
2. I , 500 mA/div
2. I , 500 mA/div
L
L
3. V , 10 mV/div
OUT
3. V , 10 mV/div
OUT
Figure 41. Startup/Shutdown Waveforms
(VOUT = 25 V)
Figure 42. Startup/Shutdown Waveforms
(VOUT = 15 V)
5.0
4.0
3.0
2.0
1.0
0
5.0
4.0
3.0
2.0
1.0
0
V
= 25 V
OUT
L1 = 10 mH, Sumida
CMD4D11−100MC
C1 = 10 mF
C2 = 3.3 mF
D1 = MBR0530LT1
Figure 1
V
= 15 V
OUT
L1 = 10 mH, Sumida
CMD4D11−100MC
C1 = 10 mF
C2 = 4.7 mF
D1 = MBR0520LT1
Figure 2
T = 25°C
A
T = 25°C
A
0
5
10
15
20
25
30
0
5
10
15
20
25
I , OUTPUT CURRENT (mA)
OUT
I , OUTPUT CURRENT (mA)
OUT
Figure 44. Startup Voltage versus Output Current
(VOUT = 15 V)
Figure 43. Startup Voltage versus Output Current
(VOUT = 25 V)
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NCP1406
DETAILED OPERATING DESCRIPTION
Current Limit
Operation
The NCP1406 is a monolithic DC−DC switching
converter optimized for single Lithium or two cells
AA/AAA size batteries powered portable products.
The NCP1406 device consists of soft−start circuit, chip
enable circuit, PFM comparator, voltage reference, PFM
on/off timing control circuit, driver, current limit circuit,
open−drain MOSFET switch, input voltage UVLO,
thermal shutdown, and feedback pin short−circuit/
open−circuit protection. The device operating current is
typically 15 mA, and can be further reduced to about 0.3 mA
The current limit circuit limits the maximum current
flowing through the LX pin to typical 0.80 A during the
MOSFET switch turn−on period. When the current limit is
exceeded, the switch will be turned off. With the current
limit circuit, the peak inductor current is limited to the
current limit, saturation of inductor is prevented and output
voltage over−shoot during startup can also be minimized.
N−Channel MOSFET Switch
The NCP1406 is built−in with a 26 V open drain
N−Channel MOSFET switch which allows high output
voltage up to 25 V to be generated from simple step−up
topology.
when the chip is disabled (V < 0.3 V).
CE
The operation of NCP1406 can be best understood by
referring to the block diagram and typical application
circuit in Figures 1 and 4. The PFM comparator monitors
the output voltage via the external feedback resistor divider
by comparing the feedback voltage with the reference
voltage. When the feedback voltage is lower than the
reference voltage, the PFM control and driver circuit turns
on the N−Channel MOSFET switch and the current ramps
up in the inductor. The switch will remain on for the
maximum on−time, 0.90 ms, or until the current limit is
reached, whichever occurs first. The MOSFET switch is
then turned off and energy stored in the inductor will be
discharged to the output capacitor and load through the
Schottky diode. The MOSFET switch will be turned off for
at least the minimum off−time, 0.13 ms, and will remain off
if the feedback voltage is higher than the reference voltage
and output capacitor will be discharged to sustain the
output current, until the feedback voltage is again lower
than reference voltage. This switching cycle is then
repeated to attain voltage regulation.
Input Voltage Undervoltage Lockout
There is an undervoltage lockout circuit continuously
monitoring the voltage at the VDD pin. The device will be
disabled if the VDD pin voltage drops below the UVLO
threshold voltage.
FB Pin Short−Circuit/Open−Circuit Protection
With the FB protection circuit, the drain−to−source
leakage current of the N−Ch MOSFET is sensed. When the
FB pin connection is shorted or opened, the converter
switches at maximum duty cycle, the peak of V and the
LX
V
OUT
will build up, and the leakage current will increase.
When the leakage current increases to a certain level, the
converter will stop switching with the protection circuit.
Therefore, the peak of V will stop increasing at a certain
LX
level before the N−Ch MOSFET is damaged immediately.
However, the sensing of the leakage current is not very
accurate and cannot be too close to the normal 26 V
maximum operating condition. Therefore, the V
is
LX
around 30 V to 40 V during a FB pin protection fault.
Soft−Start
Thermal Shutdown
There is a soft−start circuit in NCP1406. When power is
applied to the device, the soft−start circuit limits the device
to switch at a small duty cycle initially, the duty cycle is
then increased gradually until the output voltage is in
regulation. With the soft−start circuit, the output voltage
over−shoot is minimized and the startup capability with
heavy loads is also improved.
When the chip junction temperature exceeds 140°C, the
entire IC is shutdown. The IC will resume operation when
the junction temperature drops below 130°C.
Enable/Disable Operation
The NCP1406 offers IC shutdown mode by the chip
enable pin (CE pin) to reduce current consumption. An
internal 150 nA pullup current source ties the CE pin to the
VDD pin by default. Therefore, the user can float the CE
pin for permanent “ON”. When the voltage at the CE pin
is equal to or greater than 0.9 V, the chip will be enabled,
which means the device is in normal operation. When the
voltage at the CE pin is less than 0.3 V, the chip is disabled,
which means IC is shutdown. During shutdown, the IC
supply current reduces to 0.3 mA and the LX pin enters
high impedance state. However, the input remains
connected to the output through the inductor and the
Schottky diode, keeping the output voltage one diode
forward voltage drop below the input voltage.
ON/OFF Timing Control
The maximum on−time is typically 0.90 ms, whereas, the
minimum off−time is typically 0.13 ms. The switching
frequency can be up to 1.0 MHz.
Voltage Reference and Output Voltage
The internal bandgap voltage reference is trimmed to
1.19 V at an accuracy of "1.0% at 25°C. The voltage
reference is connected to the non−inverting input of the
PFM comparator and the inverting input of the PFM
comparator is connected to the FB pin. The output voltage
can be set by connected an external resistor voltage divider
from the VOUT to the FB pin. With the internal 26 V
MOSFET switch, the output voltage can be set between VIN
to 25 V.
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NCP1406
APPLICATIONS CIRCUIT INFORMATION
External Component Selection
increases above the maximum output current in DCM
mode. However, stable operation in continuous conduction
mode is hard to achieve, and double pulsing or group
pulsing will occur which will lead to much larger inductor
current ripple and result in larger output ripple voltage.
If the current limit is used to turn off the MOSFET in
order to maximize the output current, it is critical to make
sure that the current limit has been reached before the
maximum on−time is met. To ensure this condition is met,
the inductance L should be selected according the
following inequality:
Inductor
The NCP1406 is designed to work well with a range of
inductance values; the actual inductance value depends on
the specific application, output current, efficiency, and
output ripple voltage. For step−up conversion, the device
works well with inductance ranging from 1.0 mH to 47 mH.
In general, an inductor with small DCR, usually less than
1.0 W, should be used to minimize loss. It is necessary to
choose an inductor with saturation current greater than the
peak switching current in the application.
V
NCP1406 is designed to operate in discontinuous
conduction mode (DCM). Stable operation in continuous
conduction mode is not guaranteed. For each switching
cycle, if the internal MOSFET is switched on, it will be
IN
L t
t
on(max)
I
LIM
Since there is 100 ns internal propagation delay between
the time the current limit is reached and the time the
MOSFET is switched off, the actual peak inductor current
can be obtained from the equation below:
switched off only when either the maximum on−time, t ,
on
of typical 0.9 ms is reached or the inductor current limit of
0.8 A is met, whichever is earlier. Therefore, the designer
can choose to use either the maximum on−time or the
current limit to turn off the MOSFET switch. If the goal is
targeted to minimize output ripple voltage, the maximum
on−time of 0.9 ms should be used to turn off the MOSFET;
however, the maximum output current will be reduced. If
we target to maximize the output current, the current limit
should be chosen to turn off the MOSFET, but this method
will result in a larger output ripple voltage.
V
L
IN
I
+ I
LIM
)
100 ns
PK
Where ILIM is the current limit which is typically 0.8 A,
is the input voltage, L is the selected inductance.
Then the maximum output current under the current limit
control can be calculated by the equation below:
V
IN
V
IN
I
PK
I
+
h
OUT(max)
2(V
) V )
OUT
D
This method can achieve larger maximum output current
in DCM mode. Since the current limit is reached in each
switching cycle, the inductor current ripple is larger
resulting in larger output voltage ripple. Two ceramic
capacitors in parallel can be used at the output to keep the
output ripple small.
If the maximum on−time is used to turn off the MOSFET
in order to achieve a smaller output ripple voltage, it is
critical to ensure that the maximum on−time has been
reached before the current limit is met. To ensure this
condition is met, the inductance L should be selected
according to the following inequality:
Diode
V
IN
L u
t
on(max)
The diode is the main source of loss in DC–DC
converters. The key parameters which affect their
efficiency are the forward voltage drop, V , and the reverse
I
LIM
Where VIN is the input voltage, ILIM is the current limit
which is typically 0.8 A, and t is the maximum
D
on(max)
recovery time, trr. The forward voltage drop creates a loss
just by having a voltage across the device while a current
flowing through it. The reverse recovery time generates a
loss when the diode is reverse biased, and the current
appears to actually flow backwards through the diode due
to the minority carriers being swept from the P–N junction.
A Schottky diode with the following characteristics is
recommended:
on−time which is typically 0.9 ms.
The maximum output current under this maximum
on−time control can be calculated from the equation below:
2
IN
V
t
on(max)
I
+
h
OUT(max)
2L(V
) V )
OUT
D
Where V is the input voltage, t
is the maximum
IN
on(max)
on−time which is typically 0.9 ms, L is the selected
inductance, VOUT is the desired output voltage, V is the
1. Small forward voltage, V < 0.3 V.
D
D
2. Small reverse leakage current.
3. Fast reverse recovery time/switching speed.
4. Rated current larger than peak inductor current,
Schottky diode forward voltage, and h is the conversion
efficiency which can be assumed typically 80% for better
margin for estimation.
The above equation for calculating IOUT(max) is for DCM
mode operation only. In fact, the operation can go beyond
the critical conduction mode if the current loading further
I
> I
.
rated
PK
5. Reverse voltage larger than output voltage,
> V
V
reverse
.
OUT
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NCP1406
Input Capacitor
1% tolerance resistors should be used for both R1 and R2
for better VOUT accuracy.
The input capacitor stabilizes the input voltage and
minimizes peak current ripple from the power source. The
capacitor should be connected directly to the inductor pin
where the input voltage is applied in order to effectively
smooth the input current ripple and voltage due to the
inductor current ripple. The input capacitor is also used to
decouple the high frequency noise from the VDD supply to
the internal control circuit; therefore, the capacitor should
be placed close to the VDD pin. For some particular
applications, separate decoupling capacitors should be
provided and connected directly to the VDD pin for better
decoupling effect. A larger input capacitor can better
reduce ripple current at the input. By reducing the ripple
current at the input, the converter efficiency can be
improved. In general, a 4.7 mF to 22 mF ceramic input
capacitor is sufficient for most applications. X5R and X7R
type ceramic capacitors are recommended due to their
good capacitance tolerance and stable temperature
behavior.
Feedforward Capacitor
A feedforward capacitor is required to add across the
upper feedback resistor to avoid double pulsing or group
pulsing at the switching node which will cause larger
inductor ripple current and higher output voltage ripple.
With adequate feedforward capacitance, evenly distributed
single pulses at the switching node can be achieved. The
range of the capacitor value is from 5.0 pF to 200 pF for
most applications. For NCP1406, the lower the switching
frequency, the larger the feedforward capacitance is
needed; besides, the higher the output voltage, the larger
the feedforward capacitance is required. For the initial trial
value of the feedforward capacitor, the following equation
can be used; however, the actual value needs fine tuning:
1
C
FF
[
f
SW(Load)
2 p
R1
20
Output Voltage Higher than 25 V
Output Capacitor
The NCP1406 can be used to generate output voltage
higher than 25 V by adding an external high voltage N−Ch
MOSFET in series with the internal MOSFET switch as
shown in Figure 51. The drain−to−source breakdown
voltage of the external MOSFET must be at least 1.0 V
higher than the output voltage. The diode D2 connected
across the gate and the source of the external MOSFET
helps the external MOSFET to turn off and ensures that
most of the voltage drops across the external MOSFET
during the switch−off period. Since the high voltage
external MOSFET is in series with the internal MOSFET,
higher break down voltage is achieved but the current
capability is not increased.
There is an alternative application circuit shown in
Figure 53 which can output voltage up to 30 V. For this
circuit, a diode−capacitor charge−pump voltage doubler
constructed by D2, D3 and C1 is added. During the internal
MOSFET switch−on time, the LX pin is shorted to ground
and D2 will charge up C1 to the stepped up voltage at the
cathode of D1. During the MOSFET switch−off time, the
voltage at VOUT will be almost equal to the double of the
voltage at the cathode of D1. The VOUT is monitored by the
FB pin via the resistor divider and can be set by the resistor
values. Since the maximum voltage at the cathode of D1 is
15 V, the maximum VOUT is 30 V. The value of C1 can be in
the range of 0.47 mF to 2.2 mF.
The output capacitor is used for sustaining the output
voltage when no current is delivering from the input, and
smoothing the ripple voltage. Ceramic capacitors should
be used for the output capacitor due to their low ESR at high
switching frequency and low profile in physical size. In
general, a 3.3 mF to 22 mF ceramic capacitor should be
appropriate for most applications. X5R and X7R type
ceramic capacitors are recommended due to their good
capacitance tolerance and temperature coefficient, while
Y5V type ceramic capacitors are not recommended since
both their capacitance tolerance and temperature
coefficient are too large. The output voltage ripple and
switching frequency at nominal load current can be
calculated by the following equations:
I
C
I
L
OUT
OUT SW(Load)
1
PK
ǒ
Ǔ
V
ripple
+
*
f
V
) V −V
IN
OUT
D
* (I −I
PK OUT
) ESR
2I
(V
) V −V
)
IN
OUT OUT
2
D
f
+
SW(Load)
I
L
PK
Where I
is the nominal load current, C
is the
OUT
OUT
selected output capacitance, I
is the peak inductor
PK
current, L is the selected inductance, V
is the output
OUT
voltage, V is the Schottky diode forward voltage, V is
D
IN
the input voltage, ESR is the ESR of the output capacitor.
Negative Voltage Generation
The NCP1406 can be used to produce a negative voltage
output by adding a diode−capacitor charge−pump circuit
(D2, D3, and C1) to the LX pin as shown in Figure 50. The
feedback voltage resistor divider is still connected to the
positive output to monitor the positive output voltage and
a small value capacitor is used at C2. When the internal
MOSFET switches off, the voltage at the LX pin charges
up the capacitor through diode D2. When the MOSFET
Feedback Resistors
To achieve better efficiency at light load, a high
impedance feedback resistor divider should be used.
Choose the lower resistor R2 value from the range of 10 kW
to 200 kW. The value of the upper resistor R1 can then be
calculated from the equation below:
V
1.19
OUT
+ R ǒ * 1Ǔ
R
1
2
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NCP1406
switches on, the capacitor C1 is effectively connected like
a reversed battery and C1 discharges the stored charge
through the R of the internal MOSFET and D3 to
Moreover, the brightness of the LEDs can be adjusted by
a DC voltage or a PWM signal with an additional circuit
illustrated below:
DS(on)
charge up COUT and builds up a negative voltage at VOUT
.
To FB Pin
To LED
D2
Since the negative voltage output is not directly monitored
by the NCP1406, the output load regulation of the negative
output is not as good as the standard positive output circuit.
The resistance values of the resistors of the voltage divider
can be one−tenth of those used in the positive output circuit
in order to improve the regulation at light load.
The application circuit in Figure 54, is actually the
combination of the application circuits in Figures 50 and
51.
R2
R1
100 kW
C2
DC/
PWM
Signal
C1
0.1 mF
RS
680 pF
GND
Step−Down Converter
Figure 45.
NCP1406 can be configured as a simple step−down
converter by using the open−drain LX pin to drive an
external P−Ch MOSFET as shown in Figure 52. The
resistor RGS is used to switch off the P−Ch MOSFET during
the switch−off period. Too small a resistance value should
not be used for RGS, otherwise, the efficiency will be
reduced. RGS should be in the range of 510 W to 5.1 kW.
With this additional circuit, the maximum LED current
is set by the above equation. The value of R2 can be
obtained by the following equation:
V
D * V * 1.19
CTL(MAX) D
MAX
(I
R2 +
*I
) R
S
LED(MAX) LED(MIN)
R1
ǒ
Ǔ
White LED Driver
The NCP1406 can be used as a constant current LED
driver which can drive up to 6 white LEDs in series as
shown in Figure 57. The LED current can be set by the
resistance value of RS. The desired LED current can be
calculated by the equation below:
VMAX is the maximum voltage of the control signal,
DCTL(MAX) is the maximum duty cycle of the control signal,
VD is the diode forward voltage, ILED(MAX) is the maximum
LED current and ILED(MIN) is the minimum LED current. If
a PWM control signal is used, the signal frequency can be
in the range of 5.0 kHz to 30 kHz. It is recommended to
keep the input PWM frequency about 15 kHz to avoid
generating audio noise.
1.19
I
+
LED
R
S
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NCP1406
PCB Layout Guidelines
PCB layout is very important for switching converter
performance. All the converter’s external components
should be placed closed to the IC. The schematic, PCB
trace layout, and component placement of the step−up
DC−DC converter demonstration board are shown in
Figure 46 to Figure 49 for PCB layout design reference.
The following guidelines should be observed:
traces for connecting the inductor L can also reduce stray
inductance). The path between C1, L1, D1, and C2 should
be kept short. The trace from L to LX pin of the IC should
also be kept short.
3. External Feedback Components
Feedback resistors R1 and R2, and feedforward
capacitor C3 should be located as close to the FB pin as
possible to minimize noise picked up by the FB pin. The
ground connection of the feedback resistor divider should
be connected directly to the GND pin.
1. Grounding
Single−point grounding should be used for the output
power return ground, the input power return ground, and
the device switch ground to reduce noise. The input ground
and output ground traces must be thick and short enough for
current to flow through. A ground plane should be used to
reduce ground bounce.
4. Input Capacitor
The input capacitor should be located close to both the
input to the inductor and the VDD pin of the IC.
5. Output Capacitor
2. Power Traces
The output capacitor should be placed close to the
output terminals to obtain better smoothing effect on output
ripple voltage.
Low resistance conducting paths (short and thick traces)
should be used for the power carrying traces to reduce
power loss so as to improve efficiency (short and thick
L1 8.2 mH
D1
TP1
TP3
V
IN
V
OUT
1.8 V to 5.0 V
25 V
MBR0530T1
R1
R2
CE
1
LX
5
C3
FB
2
C
2
C
1
3.3 mF
10 mF
VDD
3
GND
4
Enable
TP4
GND
TP2
GND
Figure 46. Step−Up Converter Demonstration Board Schematic
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NCP1406
Figure 47. Step−Up Converter Demonstration Board Top Layer Component Silkscreen
Figure 48. Step−Up Converter Demonstration Board Top Layer Copper
Figure 49. Step−Up Converter Demonstration Board Bottom Layer Copper
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NCP1406
Components Supplier
Output
Voltage
Parts
Supplier
Part Number
Description
Website
C1
Panasonic
ECJ2FB0J106M
ECJ3YB1E475M
ECJ1VC1H560K
MBR0520LT1
Ceramic Capacitor 0805 10 mF/6.3 V
Ceramic Capacitor 1206 4.7 mF/25 V
Ceramic Capacitor 0603 56 pF/50 V
www.panasonic.com
www.panasonic.com
www.panasonic.com
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C2
Panasonic
C3
Panasonic
D1
ON Semiconductor
Schottky Power Rectifier
20 V/500 mA
15 V
L1
R1
R2
U1
C1
C2
C3
D1
Sumida Electric Co. Ltd CMD4D11−100MC
Inductor 10 mH 1.2 mm Low Profile
Resistor 0603 1.3 MW
www.sumida.com
www.panasonic.com
www.panasonic.com
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Panasonic
ERJ3GEYJ135V
ERJ3GEYJ114V
NCP1406SNT1
ECJ2FB0J106M
ECJ5YB1H335M
ECJ1VC1H151K
MBR0530LT1
Panasonic
Resistor 0603 110 kW
ON Semiconductor
Panasonic
25 V Step−up DC−DC Converter
Ceramic Capacitor 0805 10 mF/6.3 V
Ceramic Capacitor 1812 3.3 mF/50 V
Ceramic Capacitor 0603 150 pF/50 V
www.panasonic.com
www.panasonic.com
www.panasonic.com
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Panasonic
Panasonic
ON Semiconductor
Schottky Power Rectifier
30 V/500 mA
25 V
L1
Sumida Electric Co. Ltd CMD4D11−100MC
Inductor 10 mH 1.2 mm Low Profile
www.sumida.com
R1
R2
U1
Panasonic
ERJ3GEYJ225V
ERJ3GEYJ114V
NCP1406SNT1
Resistor 0603 2.2 MW
www.panasonic.com
www.panasonic.com
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Panasonic
Resistor 0603 110 kW
ON Semiconductor
25 V Step−up DC−DC Converter
OTHER APPLICATION CIRCUITS
L 8.2 mH
C1
2.2 mF
V
IN
V
OUT
−15 V
2.0 V to 5.5 V
D3
C2
C
4.7 mF
25 V
OUT
6.0 mA at V = 2.0 V
40 mA at V = 5.5 V
IN
D2
IN
D1
CE
1
LX
5
C
IN
10 mF
C3
1000 pF
FB
2
2.2 mF
VDD
3
GND
4
R
1
R
1
[ * 1.19 ǒ ) 1Ǔ) 1
V
OUT
R
2
R
2
L: CR43−8R2MC, Sumida
CIN: ECJ2FB0J106M, Panasonic
COUT: ECJ3YB1E475M, Panasonic
C1: ECJ2FB1C225K, Panasonic
C2: ECJ2FB1C225K, Panasonic
C3: ECJ1VC1H102J, Panasonic
D1, D2: MBR0520LT1, ON Semiconductor
D3: MBR0520LT1 x 2, ON Semiconductor
Figure 50. Positive−to−Negative Output Converter for Negative LCD Bias
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NCP1406
L 8.2 mH
D1
V
OUT
V
IN
Up to 30 V
3.0 V to 5.5 V
C
3.3 mF
50 V
Q1
OUT
6.0 mA at V = 3.0 V
35 mA at V = 5.5 V
IN
IN
D2
C1
R
1
CE
1
LX
5
C
IN
5 pF to
1000 pF
10 mF
FB
2
10 V
R
2
VDD
3
GND
4
R
1
+ 1.19 ǒ ) 1Ǔ
V
OUT
R
2
L: CR43−8R2MC, Sumida
CIN: ECJ2FB0J106M, Panasonic
COUT: ECJ5YB1H335M, Panasonic
Q1: MGSF1N03T1, ON Semiconductor /
NTHS5402T1, ON Semiconductor
D1: MBR0530T1, ON Semiconductor
D2: MMSD914T1, ON Semiconductor
Figure 51. Step−Up DC−DC Converter with 30 V Output Voltage
L 10 mH
Q1
V
IN
V
OUT
1.6 V
200 mA
3.0 V to 5.5 V
R
1 k
GS
C
22 mF
6.3 V
OUT
C1
1000 pF
R
39 k
CE
1
LX
5
1
C
IN
D1
10 mF
FB
2
6.3 V
R
1
110 k
VDD
3
GND
4
R
1
+ 1.19 ǒ ) 1Ǔ
V
OUT
R
2
L: CR43−100MC, Sumida
CIN: ECJ2FB0J106M, Panasonic
COUT: ECJHVB0J226M, Panasonic
Q1: MGSF1P02LT1, ON Semiconductor
D1: MBR0530T1, ON Semiconductor
Figure 52. Step−Down DC−DC Converter with 1.6 V Output Voltage for DSP Circuit
http://onsemi.com
19
NCP1406
L 6.8 mH
C1 1.0 mF
D3
V
OUT
V
IN
30 V
2.0 V to 5.5 V
C
OUT1
2.0 mA at V = 2.0 V
IN
10 mF
16 V
35 mA at V = 5.5 V
D2
IN
C
10 mF
6.3 V
IN
CE
1
LX
5
C2
7.0 pF
R
1
2.2 MW
D1
FB
2
C
OUT2
10 mF
16 V
VDD
3
GND
4
R
91 kW
2
R
1
+ 1.19 ǒ ) 1Ǔ
V
OUT
R
2
L: CR43−6R8MC, Sumida
CIN: ECJ2FB0J106M, Panasonic
COUT1, COUT2: ECJ3YB1C106M, Panasonic
C1: ECJ2FB1C225K, Panasonic
D1, D2, D3: MBR0540T1, ON Semiconductor
Figure 53. Step−Up DC−DC Converter with 30 V Output Voltage
D3
D4
V
OUT
−28 V
C2
C3
9.0 mA at V = 3.3 V
3.3 mF
50 V
IN
L 8.2 mH
D2
20 mA at V = 5.0 V
IN
2.2 mF/50 V
V
IN
3.3 V to 5.0 V
C1
1 mF
50 V
Q1
CE
1
LX
5
D1
C
10 mF
6.3 V
IN
C4
750 pF to
2000 pF
R
1
FB
2
VDD
3
GND
4
R
2
R
1
[ * 1.19 ǒ ) 1Ǔ) 1
V
OUT
R
2
L: CR43−8R2MC, Sumida
CIN: ECJ2FB0J106M, Panasonic
C1: ECJGVB1C105M, Panasonic
C2: ECJ5YB1H335M, Panasonic
C3: ECJ4YB1H105M, Panasonic
Q1: MGSF1N03T1, ON Semiconductor /
NTHS5402T1, ON Semiconductor
D1, D2: MMSD914T1, ON Semiconductor
D3: MBR0530T1, ON Semiconductor
D4: MBR0530T1 x 2, ON Semiconductor
Figure 54. Voltage Inverting DC−DC Converter with −28 V Output Voltage
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20
NCP1406
D2
D3
V
OUT2
−15 V
C5
2.0 mA at V = 2.0 V
IN
4.7 mF
25 V
C4
5.0 mA at V = 2.4 V
IN
L1 10 mH
2.2 mF
10 mA at V = 3.0 V
IN
D1
V
IN
V
OUT1
15 V
2.0 V to 5.5 V
5 pF to
1000 pF
C2
4.7 mF
25 V
ON
JP1
OFF
2.0 mA at V = 2.0 V
5.0 mA at V = 2.4 V
10 mA at V = 3.0 V
IN
C
1
CE
1
LX
5
IN
10 mF
6.3 V
IN
R1 FB
C3
2
R2
VDD
3
GND
4
R
1
+ 1.19 ǒ ) 1Ǔ
V
OUT1
R
2
V
OUT2
[ −V ) 0.3
OUT1
L: CR43−100MC, Sumida
C1: ECJ2FB0J106M, Panasonic
C2, C5: ECJ3YB1E475M, Panasonic
C3: ECJ1VC1H102J, Panasonic
C4: ECJ2FB1C225K, Panasonic
D1: MBR0520LT1, ON Semiconductor
D2, D3: MBR0520LT1 x 2, ON Semiconductor
R1: 1.3 MW
R2: 110 kW
Figure 55. +15 V, −15 V Outputs Converter for LCD Bias Supply
D4
D5
V
OUT2
−7.5 V
C7
10 mA at V = 3.0 V
IN
10 mF
C5
16 V
L1 10 mH
2.2 mF
C4
2.2 mF
D3
V
IN
V
OUT1
3.0 V to 5.5 V
15 V
C6
10 mF
16 V
820 pF
C3
ON
JP1
OFF
10 mA at V = 3.0 V
D2
IN
C
1
CE
1
LX
5
10 mF
6.3 V
D1
R1 FB
2
C2
2.2 mF
16 V
R2
VDD
3
GND
4
C9
L: CR43−100MC, Sumida
C1: ECJ2FB0J106M, Panasonic
C6, C7: ECJ3YB1C106M, Panasonic
C3: ECJ1VC1H821J, Panasonic
C2, C4, C5: ECJ2FB1C225K, Panasonic
R
1
+ 1.19 ǒ ) 1Ǔ
V
V
OUT1
R
2
V
OUT1
2
[ −
OUT2
D1, D2, D3, D4, D5: MBR0520LT1, ON Semiconductor
R1: 1.3 MW
R2: 110 kW
Figure 56. +15 V, −7.5 V Outputs Converter for CCD Supply Circuit
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21
NCP1406
L1 4.7 mH
D1
TP1
TP3
V
OUT
I
LED
V
IN
JP1
ON
100 mA
3.0 V to 5.5 V
C1
22 mF
6.3 V
C2
TP2
GND
TP4
GND
CE
1
LX
5
CE
10 mF
16 V
FB
2
OFF
White LED x 3
Control
Signal
VDD
3
GND
4
R2
100 kW
U1: NCP1406, ON Semiconductor
D1: MBR0520LT1, ON Semiconductor
L1: CR43−4R7MC, Sumida
R1
12 W
1.19 V
R1
I
+
LED(DC)
C1: ECJHVB0J226M, Panasonic
C2: ECJ3YB1C106M, Panasonic
LED1, LED2, LED3: LWH1033 (Luxpia)
R1: 12 W
R2: 100 kW
Figure 57. White LEDs Driver Circuit
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22
NCP1406
PACKAGE DIMENSIONS
TSOP−5
SN SUFFIX
CASE 483−02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. A AND B DIMENSIONS DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
5
4
3
B
C
S
1
2
L
MILLIMETERS
INCHES
MIN MAX
0.1142 0.1220
G
DIM
A
B
C
D
G
H
J
K
L
MIN
2.90
1.30
0.90
0.25
0.85
0.013
0.10
0.20
1.25
0
MAX
3.10
A
1.70 0.0512 0.0669
1.10 0.0354 0.0433
0.50 0.0098 0.0197
1.05 0.0335 0.0413
0.100 0.0005 0.0040
0.26 0.0040 0.0102
0.60 0.0079 0.0236
1.55 0.0493 0.0610
J
0.05 (0.002)
H
M
K
M
S
10
0
10
_
_
_
_
2.50
3.00 0.0985 0.1181
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
MountingTechniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
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NCP1406/D
相关型号:
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