NCV20166SN2T1G [ONSEMI]
Precision Operational Amplifier, Low Offset, 10 MHz, Rail-to-Rail Input / Output;
| 型号： | NCV20166SN2T1G |
| 厂家： | 
ONSEMI |
| 描述： | Precision Operational Amplifier, Low Offset, 10 MHz, Rail-to-Rail Input / Output |
| 文件： | 总14页 (文件大小：1621K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Precision Operational
Amplifier, Low Offset,
10ꢀMHz, Rail-to-Rail
Input/Output
NCS20166, NCV20166
www.onsemi.com
The NCS20166 features rail−to−rail input and output, and 10 MHz
bandwidth. This low quiescent current, low noise amplifier is trimmed
to provide a low initial input offset voltage. This op amp operates over
a supply range from 3.0 V to 5.5 V. All versions are specified for
operation from −40ꢀC to +125ꢀC.
5
1
SC−74A (SOT23−5)
Features
CASE 318BQ
• Gain Bandwidth: 10 MHz Typical
• Offset Voltage: 550 mV Max (V = 5 V)
S
• Supply Voltage: 3 V to 5.5 V
MARKING DIAGRAM
• Quiescent Current: 1.55 mA Max
• Voltage Noise Density: 10 nV/√Hz Typical
• Rail−to−Rail Input and Output
AX
ꢁ
ꢁ
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
AX
M
ꢁ
= Specific Device Code
= Date Code
= Pb−Free Package
• These Devices are Pb−free, Halogen Free/BFR Free and are RoHS
(Note: Microdot may be in either location)
Compliant
Typical Applications
• Current Sensing
PIN CONNECTIONS
• Current Sensing in Motor Control Circuits
• Current Monitor for Power Supplies
• Battery Powered Instrumentation
• Transducer or Sensor Interface
• Medical Instrumentation
OUT
VSS
IN+
1
2
3
5
VDD
4
IN−
SC−74A (SOT23−5)
End Products
• Industrial
SN2 Pinout
• Power Supplies
• Computers and Servers
• Automotive
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
• Medical Instrumentation
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2020 − Rev. 0
NCS20166/D
NCS20166, NCV20166
ORDERING INFORMATION
Device
Configuration
Marking
Package
Shipping†
INDUSTRIAL AND AUTOMOTIVE
NCS20166SN2T1G
AX
AX
SC−74A
(SOT23−5)
Single
3000 / Tape and Reel
NCV20166SN2T1G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q100 qualified and PPAP capable
** Contact local sales office for more information
Table 1. ABSOLUTE MAXIMUM RATINGS Over operating free−air temperature, unless otherwise stated.
Parameter
Rating
Unit
Supply Voltage (V − V
)
6
V
DD
SS
INPUT AND OUTPUT PINS
Input Voltage (Note 1)
V
SS
– 0.3 to V + 0.3
V
V
DD
Differential Input Voltage (Note 1)
Input Current (Note 1)
V
s
10
mA
Output Short Circuit Current (Note 2)
TEMPERATURE
Continuous
Operating Temperature
–40 to +125
–65 to +150
+150
°C
°C
°C
°C
Storage Temperature
Junction Temperature
Lead Temperature Soldering Reflow (SMD Styles Only), Pb−Free Versions
ESD RATINGS (Note 3)
+260
Human Body Model (HBM)
2000
1000
V
V
Charged Device Model (CDM)
OTHER RATINGS
Latch−up Current (Note 4)
100
1
mA
Moisture Sensitivity Level (MSL)
Continuous Total Power Dissipation
200
mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Input terminals are diode clamped to the power supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should
be current limited to 10 mA or less
2. Short−circuit to ground up to T = 125°C.
A
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JEDEC standard JS−001−2017 (AEC−Q100−002)
ESD Charged Device Model tested per JEDEC standard JS−002−2014 (AEC−Q100−011)
4. Latch−up Current tested per JEDEC standard JESD78E (AEC−Q100−004)
Table 2. THERMAL INFORMATION (Note 5)
Parameter
Symbol
Package
Value
Unit
Junction−to−Ambient
q
SC−74A (SOT23−5)
198
°C/W
JA
2
5. As mounted on an 80x80x1.5 mm FR4 PCB with 600 mm and 2 oz (0.034 mm) thick copper heat spreader. Following JEDEC JESD/EIA
51.1, 51.2, 51.3 test guidelines
Table 3. OPERATING CONDITIONS
Parameter
Symbol
Min
3
Max
5.5
Units
V
Supply Voltage (V − V
)
V
S
DD
SS
Specified Operating Temperature Range
Input Common Mode Voltage Range
T
−40
125
°C
A
V
V
SS
V
DD
V
ICMR
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NCS20166, NCV20166
Table 4. ELECTRICAL CHARACTERISTICS V = 3.0 V to 5.5 V
S
At T = +25°C, R = 10 kW, C = 15 pF connected to mid supply, V
= V /2, unless otherwise noted.
A
L
L
CM
S
Boldface limits apply over the specified temperature range, T = –40°C to 125°C, guaranteed by characterization and/or design.
A
Parameter
Symbol
Conditions
Min
Typ
Max
Units
INPUT CHARACTERISTICS
Input Offset Voltage
V
V
S
= 3 to 5.5 V, T = 25°C
50
100
1
550
+1050
5
mV
OS
A
V
S
= 3 to 5.5 V
Offset Voltage Drift
DV /DT
mV/°C
pA
OS
Input Bias Current (Note 6)
I
1
IB
600
600
pA
Input Offset Current (Note 6)
I
1
pA
OS
pA
Common Mode Rejection
Ratio @ Vs = 5.5 V
CMRR
V
CM
= V to V
DD
77
70
92
87
dB
SS
Common Mode Rejection
Ratio @ Vs = 3 V
Input Capacitance
C
Differential
Common Mode
6
pF
IN
12
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
A
VOL
V
O
= V + 0.05 V to V – 0.05 V
120
dB
SS
DD
Open Loop Output Impedance
Z
See
Figure 29
W
OUT_OL
Output Voltage High, Refer-
enced to Rail (Note 6)
V
I = 1 mA
30
120
30
mV
mV
mA
OH
L
I = 10 mA
L
Output Voltage Low, Refer-
enced to Rail (Note 6)
V
I = 1 mA
L
OL
I = 10 mA
L
120
Short Circuit Current
I
Sinking Current
25
25
SC
Sourcing Current
DYNAMIC PERFORMANCE
Gain Bandwidth Product
Gain Margin
GBWP
10
10
50
6
MHz
dB
A
V
V
= 5.5 V, Load = 10 kW || 100 pF
= 5.5 V, Load = 10 kW || 100 pF
M
M
S
Phase Margin
f
°
S
Slew Rate
SR
1 V Step, Rising Edge, V = 5.5 V
V/ms
S
A = 1, Load = 10 kW || 100 pF
v
1 V Step, Falling Edge, V = 5.5 V
4
6
4
S
A = 1, Load = 10 kW || 100 pF
v
1 V Step, Rising Edge, V = 5.5 V
S
A = 1, Load = 10 kW || 60 pF
v
1 V Step, Falling Edge, V = 5.5 V
S
A = 1, Load = 10 kW || 60 pF
v
Settling Time
t
0.1% V = 2 V step, AV = −1
0.5
1
ms
ms
ms
ms
pF
S
o
0.01% V = 2 V step, AV = −1
o
Turn On Time
t
3.5
2
ON
Overload Recovery Time
Capacitive Load Drive
t
VIN ≤ 100 mV Step, A = −100
OR
V
C
See
Figure 30
L
www.onsemi.com
3
NCS20166, NCV20166
Table 4. ELECTRICAL CHARACTERISTICS V = 3.0 V to 5.5 V
S
At T = +25°C, R = 10 kW, C = 15 pF connected to mid supply, V
= V /2, unless otherwise noted.
A
L
L
CM
S
Boldface limits apply over the specified temperature range, T = –40°C to 125°C, guaranteed by characterization and/or design.
A
Parameter
Symbol
Conditions
Min
Typ
Max
Units
NOISE PERFORMANCE
Total Harmonic Distortion +
Noise
THD+N
V
S
= 5.5 V, f = 1 kHz, AV = 1,
0.001
%
IN
V
= 1 Vrms
out
Voltage Noise Density
Voltage Noise, Peak−to−Peak
POWER SUPPLY
e
V
= 5.5 V, f = 1 kHz
10
3
nV/√Hz
N
S
IN
e
PP
V
S
= 5.5 V, f = 0.1 Hz to 10 Hz
mV
PP
IN
Power Supply Rejection Ratio
Quiescent Current
PSRR
V
S
= 3 V to 5.5 V
No load
73
89
1
dB
mA
I
Q
1.25
1.55
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
www.onsemi.com
4
NCS20166, NCV20166
TYPICAL CHARACTERISTICS
T = 25°C, V = 5.5 V, V
= V /2, unless otherwise noted.
A
S
CM
S
Figure 1. Input Offset Voltage Distribution,
Figure 2. Input Offset Voltage Distribution,
VS = 5.5 V, 255C
VS = 3 V, 255C
Figure 3. Input Offset Voltage vs. Temperature
Distribution, VS = 5.5 V
Figure 4. Input Offset Voltage vs. Temperature
Distribution, VS = 3 V
Figure 5. Input Offset Voltage vs. Temperature,
VS = 5.5 V
Figure 6. Input Offset Voltage vs. Temperature,
VS = 3 V
www.onsemi.com
5
NCS20166, NCV20166
TYPICAL CHARACTERISTICS
T = 25°C, V = 5.5 V, V
= V /2, unless otherwise noted.
A
S
CM
S
Figure 7. Input Offset Voltage vs. Input
Common Mode Voltage, VS = 5.5 V
Figure 8. Input Offset Voltage vs. Input
Common Mode Voltage, VS = 3 V
Figure 9. Input Offset Voltage vs. Supply
Figure 10. Gain and Phase vs. Frequency,
VS = 5.5 V
Voltage, 255C
Figure 11. Input Bias and Offset Current vs.
Common Mode Voltage, VS = 5.5 V
Figure 12. Input Bias Current and Input Offset
Current vs. Temperature, VS = 5.5 V
www.onsemi.com
6
NCS20166, NCV20166
TYPICAL CHARACTERISTICS
T = 25°C, V = 5.5 V, V
= V /2, unless otherwise noted.
A
S
CM
S
Figure 13. VOH vs. Output Current vs.
Temperature, VS = 5.5 V
Figure 14. VOL vs. Output Current vs.
Temperature, VS = 5.5 V
Figure 15. VOH vs. Output Current vs.
Temperature, VS = 3 V
Figure 16. VOL vs. Output Current vs.
Temperature, VS = 3 V
Figure 17. Common Mode Rejection Ratio vs.
Frequency
Figure 18. Power Supply Rejection Ratio vs.
Frequency, VS = 5.5 V
www.onsemi.com
7
NCS20166, NCV20166
TYPICAL CHARACTERISTICS
T = 25°C, V = 5.5 V, V
= V /2, unless otherwise noted.
A
S
CM
S
Figure 19. Common Mode Rejection Ratio vs.
Temperature, VS = 5.5 V
Figure 20. Common Mode Rejection Ratio vs.
Temperature, VS = 3 V
Figure 21. Power Supply Rejection Ratio vs.
Temperature
Figure 22. 0.1 Hz 10 Hz Voltage Noise
Figure 23. Voltage Noise Density vs.
Frequency
Figure 24. THD + Noise vs. Frequency,
VS = 5.5 V
www.onsemi.com
8
NCS20166, NCV20166
TYPICAL CHARACTERISTICS
T = 25°C, V = 5.5 V, V
= V /2, unless otherwise noted.
A
S
CM
S
Figure 25. THD + Noise vs. Output Amplitude
at 1 KHz
Figure 26. Quiescent Current vs. Supply
Voltage
Figure 27. Open Loop Gain vs. Temperature,
VS = 5.5 V
Figure 28. Open Loop Gain vs. Temperature,
VS = 3 V
Figure 29. Open Loop Output Impedance vs.
Frequency
Figure 30. Small Signal Overshoot vs.
Capacitive Load
www.onsemi.com
9
NCS20166, NCV20166
TYPICAL CHARACTERISTICS
T = 25°C, V = 5.5 V, V
= V /2, unless otherwise noted.
A
S
CM
S
Figure 31. No Phase Reversal,
VS = 5.5 V
Figure 32. Positive Overload Recovery,
VS = 5.5 V
Figure 33. Negative Overload Recovery,
VS = 5.5 V
Figure 34. Small Signal Step Response,
Non−Inverting, VS = 5.5 V
Figure 35. Small Signal Step Response,
Inverting, VS = 5.5 V
Figure 36. Large Signal Step Response,
Non−Inverting, VS = 5.5 V
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10
NCS20166, NCV20166
TYPICAL CHARACTERISTICS
T = 25°C, V = 5.5 V, V
= V /2, unless otherwise noted.
A
S
CM
S
Figure 37. Large Signal Step Response,
Inverting, VS = 5.5 V
Figure 38. Large Signal Settling Time
(2 V Negative Step)
Figure 39. Large Signal Settling Time
(2 V Positive Step)
Figure 40. Full Power Bandwidth
Figure 41. Turn On Time, VS = 5.5 V
www.onsemi.com
11
NCS20166, NCV20166
APPLICATIONS INFORMATION
APPLICATION CIRCUITS
Low−Side Current Sensing
The goal of low−side current sensing is to detect
over−current conditions or as a method of feedback control.
A sense resistor is placed in series with the load to ground.
Typically, the value of the sense resistor is less than 100 mW
to reduce power loss across the resistor. The op amp
amplifies the voltage drop across the sense resistor with a
gain set by external resistors R1, R2, R3, and R4 (where R1
= R2, R3 = R4). Precision resistors are required for high
accuracy, and the gain is set to utilize the full scale of the
ADC for the highest resolution.
R3
VLOAD
VDD
VDD
VDD
Load
R1
Microcontroller
+
RSENSE
ADC
control
−
R2
R4
Figure 42. Low−Side Current Sensing
Differential Amplifier for Bridged Circuits
GENERAL LAYOUT GUIDELINES
Sensors to measure strain, pressure, and temperature are
often configured in a Wheatstone bridge circuit as shown in
Figure 43. In the measurement, the voltage change that is
produced is relatively small and needs to be amplified before
going into an ADC. Precision amplifiers are recommended
in these types of applications due to their high gain, low
noise, and low offset voltage.
To ensure optimum device performance, it is important to
follow good PCB design practices. Place 0.1 mF decoupling
capacitors as close as possible to the supply pins. Keep traces
short, utilize a ground plane, choose surface−mount
components, and place components as close as possible to
the device pins. These techniques will reduce susceptibility
to electromagnetic interference (EMI). Thermoelectric
effects can create an additional temperature dependent
offset voltage at the input pins. To reduce these effects, use
metals with low thermoelectric−coefficients and prevent
temperature gradients from heat sources or cooling fans.
VDD
VDD
−
+
Figure 43. Bridge Circuit Amplification
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12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−74A
CASE 318BQ
ISSUE B
5
1
DATE 18 JAN 2018
SCALE 2:1
5X b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
0.20 C A B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE.
M
5
4
E1
E
1
2
3
0.05
A1
L
B
e
DETAIL A
A
D
MILLIMETERS
DIM
A
A1
b
c
D
E
E1
e
MIN
0.90
0.01
0.25
0.10
2.85
2.50
1.35
MAX
1.10
0.10
0.50
0.26
3.15
3.00
1.65
TOP VIEW
SIDE VIEW
A
DETAIL A
c
0.95 BSC
SEATING
PLANE
END VIEW
C
L
M
0.20
0
0.60
10
_
_
RECOMMENDED
GENERIC
SOLDERING FOOTPRINT*
MARKING DIAGRAM*
0.95
PITCH
XXX MG
G
XXX
M
= Specific Device Code
= Date Code
2.40
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
5X
1.00
5X
0.70
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON66279G
SC−74A
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
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