NCV6356QMTWTXG [ONSEMI]

同步降压转换器,处理器电源,I2C 编程,5.0 A;
NCV6356QMTWTXG
型号: NCV6356QMTWTXG
厂家: ONSEMI    ONSEMI
描述:

同步降压转换器,处理器电源,I2C 编程,5.0 A

开关 光电二极管 转换器
文件: 总34页 (文件大小:2368K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NCV6356  
AOT Step Down Converter,  
Configurable  
5.0 A  
Description  
www.onsemi.com  
The NCV6356 is a synchronous AOT (Adaptive Ontime) buck  
converter optimized to supply the different sub systems of automotive  
applications post regulation system up to 5 V input. The device is able  
to deliver up to 5.0 A, with programmable output voltage from 0.6 V  
to 1.4 V. Operation at up to 2.4 MHz switching frequency allows the  
use of small components. Synchronous rectification and automatic  
PFM PseudoPWM (PPWM) transitions improve overall solution  
efficiency. The NCV6356 is in low profile 3.0 x 4.0 mm DFN14  
package.  
1
WDFNW14 4x3, 0.5P  
CASE 511CM  
MARKING DIAGRAM  
Features  
6356  
xx  
AYWW  
G
Input Voltage Range from 2.5 V to 5.5 V : Battery, 3.3 V and 5.0 V  
Rail Powered Applications  
Power Capability : 3.0 A Ta = 105°C 5.0 A Ta = 85°C  
Programmable Output Voltage : 0.6 V to 1.4 V in 6.25 mV Steps  
Up to 2.4 MHz Switching Frequency with On Chip Oscillator  
Uses 330 nH Inductor and at least 22 mF Capacitors for Optimized  
Footprint and Solution Thickness  
6356  
xx  
= Specific Device Code  
= C: 1.150 V / 1.150 V  
= B: 1.200 V / 1.200 V  
= Q: 0.875 V / 0.906 V  
= Assembly Location  
= Year  
PFM/PPWM Operation for Optimum Efficiency  
A
Y
WW  
G
Low 60 mA Quiescent Current  
= Work Week  
= PbFree Package*  
2
I C Control Interface with Interrupt and Dynamic Voltage Scaling  
Support  
(Note: Microdot may be in either location)  
Enable / VSEL Pins, Power Good / Interrupt Signaling  
Thermal Protections and Temperature Management  
Transient Load Helper: Share the Same Rail with Another Rail  
3.0 x 4.0 mm / 0.5 mm Pitch DFN 14 Package  
AECQ100 Qualified and PPAP Capable  
Typical Applications  
Snap Dragon  
Automotive POL  
Instrumentation, Clusters  
Infotainment  
ADAS System (Vision, Radar)  
(Top View)  
14Pin 0.50 mm pitch DFN  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 32 of this data sheet.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
August, 2019 Rev. 0  
NCV6356/D  
NCV6356  
NCV6356  
Supply Input  
4.7 u F  
AVIN  
PVIN  
SW  
Supply Input  
Core  
AGND  
10uF  
Thermal  
Protection  
DCDC  
5A  
Enable Control  
Input  
EN  
Operating  
Mode  
Modular  
Driver  
330nH  
VSEL  
Voltage Selection  
Control  
2x 22uF  
PGND  
FB  
Output  
PGND  
Interrupt  
Monitoring  
INTB  
DCDC  
2.4MHz  
Processor  
Core  
SDA  
Sense  
I@C  
Processor I@C  
Controller  
SCL  
Control Interface  
Figure 1. Typical Application Circuit  
PVIN  
PVIN  
POWER INPUT  
SUPPLY INPUT  
AVIN  
Core  
Thermal  
ANALOG GROUND  
AGND  
SW  
SW  
SW  
5.0 A  
DC-DC  
SWITCH NODE  
Protection  
Output Voltage  
Monitoring  
ENABLE CONTROL INPUT  
EN  
Up to 2.4 MHz  
DCDC converter  
Controller  
Operating  
Mode Control  
VOLTAGE SELECTION  
VS EL  
PGND  
PGND  
POWER GROUND  
FEEDBACK  
INTB  
SCL  
SDA  
Logic Control  
Interrupt  
I2C  
2
PROCESSOR I C  
VOUT  
Sense  
CONTROL INTERFACE  
Figure 2. Simplified Block Diagram  
www.onsemi.com  
2
NCV6356  
Figure 3. Pin Out (Top View)  
Table 1. PIN FUNCTION DESCRIPTION  
Pin  
Name  
Type  
Description  
REFERENCE  
4
AVIN  
AGND  
Analog Input  
Analog Supply. This pin is the device analog and digital supply. Could be connected di-  
rectly to the VIN plane with a dedicated 4.7 mF ceramic capacitor. Must be equal to PVIN  
15  
Analog Ground  
Analog Ground. Analog and digital modules ground. Must be connected to the system  
ground.  
CONTROL AND SERIAL INTERFACE  
14  
EN  
Digital Input  
Enable Control. Active high will enable the part. There is an internal pull down resistor on  
this pin.  
13  
VSEL  
Digital Input  
Output voltage / Mode Selection. The level determines which of two programmable con-  
figurations to utilize (operating mode / output voltage). There is an internal pull down resis-  
tor on this pin; could be left open if not used.  
3
1
INTB  
SCL  
Digital Output  
Digital Input  
Interrupt open drain output. Must be connected to the ground plane if not used.  
2
I C interface Clock line. There is an internal pull down resistor on this pin; could be left  
open if not used  
2
12  
SDA  
Digital  
Input/Output  
I C interface Bidirectional Data line. There is an internal pull down resistor on this pin;  
could be left open if not used  
DC to DC CONVERTER  
8, 9  
PVIN  
Power Input  
Switch Supply. These pins must be decoupled to ground by at least a 10 mF ceramic  
capacitor. It should be placed as close as possible to these pins. All pins must be used  
with short heavy connections. Must be equal to AVIN  
5, 6, 7  
SW  
Power Output  
Switch Node. These pins supply drive power to the inductor. Typical application uses  
0.33 mH inductor; refer to application section for more information.  
All pins must be used with short heavy connections.  
10, 11  
PGND  
VOUT  
Power Ground  
Analog Input  
Switch Ground. This pin is the power ground and carries the high switching current. High  
quality ground must be provided to prevent noise spikes. To avoid highdensity current  
flow in a limited PCB track, a local ground plane that connects all PGND pins together is  
recommended. Analog and power grounds should only be connected together in one loca-  
tion with a trace.  
2
Feedback Voltage Input. Must be connected to the output capacitor positive terminal with  
a trace, not to a plane. This is the positive input to the error amplifier.  
www.onsemi.com  
3
NCV6356  
Table 2. MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Analog and power pins (Note 1):  
V
A
V
AVIN, PVIN, SW, INTB, VOUT, DC non switching  
PVINPGND pins, transient 3 ns – 2.4 MHz  
0.3 to +6.0  
0.3 to +7.5  
2
I C pins: SDA, SCL  
V 2  
I C  
0.3 to +6.0  
V
Digital pins : EN, VSEL  
Input Voltage  
V
DG  
0.3 to V +0.3 6.0  
V
A
Input Current  
I
10  
mA  
DG  
Human Body Model (HBM) ESD Rating (Note 2)  
Charged Device Model (CDM) ESD Rating (Note 2)  
ESD HBM  
ESD CDM  
2500  
1000  
V
V
Latch Up Current: (Note 3)  
Digital Pins  
I
LU  
100  
100  
mA  
All Other Pins  
Storage Temperature Range  
Maximum Junction Temperature  
Moisture Sensitivity (Note 4)  
T
65 to +150  
40 to +150  
Level 1  
°C  
°C  
STG  
T
JMAX  
MSL  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe  
Operating parameters.  
2. This device series contains ESD protection and passes the following ratings:  
Human Body Model (HBM) 2.5 kV per JEDEC standard: JESD22*A114.  
Charged Device Model (CDM) 1.0 kV per JEDEC standard: JESD22C101 Class IV  
3. Latch up Current per JEDEC standard: JESD78 class II.  
4. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: JSTD020A.  
Table 3. OPERATING CONDITIONS  
Symbol  
AV PV  
Parameter  
Conditions  
PV  
Min  
2.5  
40  
Typ  
Max  
5.5  
+125  
Unit  
V
Power Supply  
AV  
IN =  
IN,  
IN  
IN  
T
J
Junction Temperature Range (Note 6)  
Thermal Resistance Junction to Ambient (Note 7)  
Power Dissipation Rating (Note 8)  
25  
30  
°C  
R
DFN14 on Demoboard  
105°C,  
°C/W  
mW  
q
JA  
P
D
T
A
666  
R
= 30°C/W  
q
JA  
T
R
85°C  
1333  
2000  
mW  
mW  
A
= 30°C/W  
q
JA  
T = 65°C  
A
R
= 30°C/W  
q
JA  
L
Inductor for DC to DC converter (Note 5)  
0.15  
15  
0.33  
0.47  
200  
mH  
mF  
mF  
Co  
Output Capacitor for DC to DC Converter (Note 5)  
Input Capacitor for DC to DC Converter (Note 5)  
Cin  
Per 1.0 A of I  
6.0  
10.0  
OUT  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
5. Including deratings (Refer to the Application Information section of this document for further details)  
6. The thermal shutdown set to 150°C (typical) avoids potential irreversible damage on the device due to power dissipation  
7. The R  
is dependent of the PCB heat dissipation. Board used to drive this data was a NCV6356EVB board. It is a multilayer board with  
q
JA  
1once internal power and ground planes and 2once copper traces on top and bottom of the board  
8. The maximum power dissipation (PD) is dependent on input voltage, maximum output current, pcb stack up and layout, and external  
components selected.  
125 * T  
RqJA  
+
A , by taking RqJA + 30oC  
PD  
www.onsemi.com  
4
 
NCV6356  
Table 4. ELECTRICAL CHARACTERISTICS (Note 9)  
Min and Max Limits apply for T = 40°C to +125°C, AVIN = PVIN = 3.3 V and default configuration, unless otherwise specified.  
J
Typical values are referenced to T = + 25°C, AVIN = PVIN = 3.3 V and default configuration, unless otherwise specified.  
A
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Supply Current: Pins AVIN – PVINx  
I
I
I
I
Operating quiescent current PPWM  
Operating quiescent current PFM  
Product sleep mode current  
Product in off mode  
DCDC active in Forced PPWM  
no load  
22  
60  
5
25  
90  
10  
3
mA  
mA  
mA  
mA  
QPPWM  
Q PFM  
SLEEP  
OFF  
DCDC active in Auto mode  
no load – minimal switching  
Product in sleep mode  
V
IN  
= 5.5 V, T up to 85°C  
J
EN, VSEL and Sleep_Mode low,  
0.8  
2
No I C pull up  
V
IN  
= 5.5 V, T up to 85°C  
J
DC to DC Converter  
PV  
Input Voltage Range  
Load Current Range  
2.5  
5.5  
V
A
IN  
I
NCV6356B and NCV6356C  
(Note 11, 12)  
OUT  
Ipeak[1..0] = 00  
Ipeak[1..0] = 01  
Ipeak[1..0] = 10  
Ipeak[1..0] = 11  
0
0
0
0
3.5  
4.0  
4.5  
5.0  
NCV6356Q (Note 11, 12)  
Ipeak[1..0] = 00  
Ipeak[1..0] = 01  
Ipeak[1..0] = 10  
Ipeak[1..0] = 11  
0
0
0
0
5.3  
5.8  
6.3  
6.8  
D
Output Voltage DC Error  
Forced PPWM mode, V range,  
No load  
1.5  
1.5  
%
VOUT  
IN  
Forced PPWM mode, V range,  
2  
2
IN  
I
up to I  
(Note 11)  
OUT  
OUTMAX  
Auto mode, V range,  
3  
2
IN  
(Note 11)  
OUTMAX  
I
up to I  
OUT  
F
Switching Frequency  
2.16  
2.4  
38  
2.64  
50  
MHz  
SW  
R
PChannel MOSFET On Resistance  
From PVIN to SW  
= 5.0 V  
mW  
ONHS  
V
IN  
R
NChannel MOSFET On Resistance  
From SW to PGND  
= 5.0 V  
29  
40  
mW  
ONLS  
V
IN  
I
PK  
Peak Inductor Current  
NCV6356B and NCV6356C  
Open loop Ipeak[1..0] = 00  
Open loop Ipeak[1..0] = 01  
Open loop Ipeak[1..0] = 10  
Open loop Ipeak[1..0] = 11  
A
4.6  
5.2  
5.6  
6.2  
5.2  
5.8  
6.2  
6.8  
5.8  
6.4  
6.8  
7.4  
NCV6356QM  
Open loop Ipeak[1..0] = 00  
Open loop Ipeak[1..0] = 01  
Open loop Ipeak[1..0] = 10  
Open loop Ipeak[1..0] = 11  
6.4  
7.2  
7.6  
8.4  
7.0  
7.8  
8.2  
9.0  
7.7  
8.4  
8.8  
9.6  
DC  
DC  
Load Regulation  
Line Regulation  
I
from 0 A to I (Note 11)  
OUTMAX  
5
mV  
mV  
LOAD  
LINE  
OUT  
Forced PPWM mode  
2.5 V V 5.5 V  
6
IN  
Forced PPWM mode  
www.onsemi.com  
5
 
NCV6356  
Table 4. ELECTRICAL CHARACTERISTICS (Note 9)  
Min and Max Limits apply for T = 40°C to +125°C, AVIN = PVIN = 3.3 V and default configuration, unless otherwise specified.  
J
Typical values are referenced to T = + 25°C, AVIN = PVIN = 3.3 V and default configuration, unless otherwise specified.  
A
Symbol  
AC  
Parameter  
Conditions  
t = t = 100 ns  
Min  
Typ  
Max  
Unit  
Transient Load Response  
20  
mV  
LOAD  
r
f
Load step 1.5 A (Note 11)  
NCV6356Q  
60  
50  
67  
t = t = 200 ns, V = 1.0 V  
OUT  
r
f
L = 0.24 mH, C  
= 4 x 47 mF  
OUT  
Load step 0.4A / 6.6 A (Note 11)  
AC  
D
Transient Line Response  
t = t = 10 ms  
Line step 3.3 V / 3.9 V (Note 11)  
20  
mV  
LINE  
r
f
Maximum Duty Cycle  
Turn on time  
100  
100  
%
t
Time from EN transitions from Low  
to High to 90% of Output Voltage  
130  
Us  
START  
(DVS[1..0] = 00b)  
R
DCDC Active Output Discharge  
Vout = 1.15 V  
12  
20  
W
DISDCDC  
EN, VSEL  
V
V
High input voltage  
Low input voltage  
Digital input X Filter  
1.05  
V
V
IH  
0.4  
4.5  
IL  
T
FTR  
EN, VSEL rising and falling  
DBN_Time = 01 (Note 11)  
0.5  
ms  
I
Digital input X PullDown  
For EN and VSEL pins  
0.05  
1.00  
mA  
PD  
(input bias current)  
INTB (Optional)  
V
V
INTB low output voltage  
INTB high output voltage  
INTB leakage current  
I
= 5 mA  
0
0.2  
5.5  
100  
INTBL  
INTBH  
INT  
Open drain  
INTB  
3.6V at INTB pin when INTB valid  
LK  
2
I C  
V 2  
High level at SCL/SCA line  
SCL, SDA low input voltage  
SCL high input voltage  
SDA high input voltage  
SDA low output voltage  
1.7  
4.5  
0.4  
V
V
V
I CINT  
V 2  
I CIL  
SCL, SDA pin (Note 10)  
SCL pin (Note 10, 11)  
SDA pin (Note 10, 11)  
V 2  
I CIH  
1.6  
1.2  
V 2  
I COL  
I
= 3 mA  
0.4  
3.4  
V
SINK  
2
F
SCL  
I C clock frequency  
(note 11)  
MHz  
TOTAL DEVICE  
V
V
Under Voltage Lockout  
V
V
falling  
rising  
60  
2.5  
200  
V
mV  
°C  
°C  
°C  
°C  
°C  
°C  
UVLO  
IN  
Under Voltage Lockout Hysteresis  
Thermal Shut Down Protection  
Warning Rising Edge  
UVLOH  
SD  
IN  
T
T
T
T
T
T
150  
135  
105  
30  
15  
6
WARNING  
PWTH  
2
Pre – Warning Threshold  
I C default value  
Thermal Shut Down Hysteresis  
Thermal warning Hysteresis  
Thermal prewarning Hysteresis  
SDH  
WARNINGH  
PWTH H  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
9. Refer to the Application Information Section of this data sheet for more details.  
2
10.Devices that use nonstandard supply voltages which do not conform to the intent I C bus system levels must relate their input levels to the  
V
voltage to which the pullup resistors R are connected.  
DD  
P
11. Guaranteed by design and characterized.  
12.Junction temperature must be maintained below 125°C. Output load current capability depends on the application thermal capability.  
www.onsemi.com  
6
 
NCV6356  
Typical Operating Characteristics  
AV = PV = 3.3 V, T =+25°C  
IN  
IN  
J
DCDC=1.15 V, Ipeak =6.8 A (Unless otherwise noted). L=0.33 uH DFE252012F – Cout = 2 x 22uF 0603, Cin = 4.7 uF 0603.  
Figure 5. Efficiency vs ILOAD and Temperature,  
OUT = 1.39375 V, SPM5030 Inductor  
Figure 4. Efficiency vs ILOAD and VIN,  
OUT = 1.39375 V, SPM5030 Inductor  
V
V
Figure 6. Efficiency vs ILOAD and VIN,  
OUT = 1.15 V, SPM5030 Inductor  
Figure 7. Efficiency vs ILOAD and Temperature,  
OUT = 1.15 V, SPM5030 Inductor  
V
V
Figure 8. Efficiency vs ILOAD and VIN,  
VOUT = 0.60 V, SPM5030 Inductor  
Figure 9. Efficiency vs ILOAD and Temperature,  
OUT = 0.60 V, SPM5030 Inductor  
V
www.onsemi.com  
7
NCV6356  
Figure 10. Efficiency vs ILOAD and VIN,  
OUT = 1.150 V  
Figure 11. Efficiency vs ILOAD and Temperature,  
OUT = 1.150 V  
V
V
Figure 12. Efficiency vs ILOAD and VIN,  
OUT = 0.600 V  
Figure 13. Efficiency vs ILOAD and Temperature,  
OUT = 0.875 V, HEI201612AR24M Inductor  
V
V
Figure 14. Efficiency vs ILOAD and Temperature,  
OUT = 0.906 V, HEI201612AR24M Inductor  
Figure 15. Efficiency vs ILOAD and Temperature,  
OUT = 1.394 V  
V
V
www.onsemi.com  
8
NCV6356  
Figure 16. VOUT Accuracy vs ILOAD and VIN,  
OUT = 1.150 V  
Figure 17. VOUT Accuracy vs VIN and Temperature,  
OUT = 1.150 V  
V
V
Figure 18. VOUT Accuracy vs ILOAD and VIN,  
OUT = 0.600 V  
Figure 19. VOUT Accuracy vs ILOAD and VIN,  
VOUT = 0.875 V, HEI201612AR24M Inductor  
V
Figure 20. VOUT Accuracy vs ILOAD and VIN,  
OUT = 0.906 V, HEI201612AR24M Inductor  
Figure 21. VOUT Accuracy vs ILOAD and VIN,  
OUT = 1.394 V  
V
V
www.onsemi.com  
9
NCV6356  
Figure 22. HSS RON vs VIN and Temperature  
Figure 23. LSS RON vs VIN and Temperature  
Figure 24. IOFF vs VIN and Temperature  
Figure 25. ISLEEP vs VIN and Temperature  
Figure 26. IQPFM vs VIN and Temperature  
Figure 27. IQPPWM vs VIN and Temperature  
www.onsemi.com  
10  
NCV6356  
Figure 28. Switchover Point VOUT = 1.15 V  
Figure 29. Switchover Point VOUT = 1.4 V  
Figure 30. Switching Frequency vs ILOAD and VIN,  
Figure 31. Switching Frequency vs ILOAD and  
Temperature, VOUT = 1.150 V  
V
OUT = 1.150 V  
www.onsemi.com  
11  
NCV6356  
Figure 32. Ripple  
Figure 33. Normal Power Up, VOUT = 1.15 V,  
DVS[1..0] = 00  
Figure 34. Transient Load 0.4 to 6.6 A Auto Mode,  
VIN = 3.3 V VOUT = 1.0 V L = 0.24 uH COUT = 4 x  
47 uF  
Figure 35. Transient Load 0.4 to 6.6 A Forced  
PPWM, VIN = 3.3 V VOUT = 1.0 V L = 0.24 uH −  
OUT = 4 x 47 uF  
C
www.onsemi.com  
12  
NCV6356  
Figure 36. Transient Load 0.05 to 1.5 A,  
Figure 37. Transient Load 0.05 to 1.5 A,  
Transient Line 3.0 3.6 V Auto Mode  
Transient Line 3.6 3.0 V Auto Mode  
Figure 38. Transient Load 1 to 2.5 A,  
Figure 39. Transient Load 1 to 2.5 A,  
Transient Line 3.0 3.6 V Auto Mode  
Transient Line 3.6 3.0 V Auto Mode  
www.onsemi.com  
13  
NCV6356  
DETAILED OPERATING DESCRIPTION  
Output Stage  
Detailed Descriptions  
The NCV6356 is voltage mode standalone DC to DC  
converter optimized to supply different sub systems of  
automotive applications post regulation system up to 5 V  
NCV6356 is a 3.5 A to 5.0 A output current capable DC  
to DC converter with both high side and low side  
(synchronous) switches integrated.  
2
input. It can deliver up to 5 A at an I C selectable voltage  
Inductor Peak Current Limitation / Short Protection  
During normal operation, peak current limitation  
monitors and limits the inductor current by checking the  
current in the PMOSFET switch. When this current  
exceeds the Ipeak threshold, the PMOSFET is immediately  
opened.  
To protect again excessive load or short circuit, the  
number of consecutive Ipeak is counted. When the counter  
reaches 16, the DCDC is powered down during about 2 ms  
and the ISHORT interrupt is flagged. It will restart  
following the REARM bit in the LIMCONF register:  
If REARM = 0, then NCV6356 does not restart  
automatically, an EN pin toggle is required.  
If REARM = 1, NCV6356 restarts automatically after  
the 2 ms with register values set prior the fault  
condition.  
ranging from 0.6 V to 1.40 þV. The switching frequency up  
to 2.4 MHz allows the use of small output filter components.  
Power Good indicator and Interrupt management are  
available. Operating modes, configuration, and output  
power can be easily selected either by using digital I/O pins  
2
or by programming a set of registers using an I C compatible  
interface capable of operation up to 3.4 MHz.  
2
Default I C settings are factory programmable.  
DC to DC Converter Operation  
The converter integrates both high side and low side  
(synchronous) switches. Neither external transistors nor  
diodes are required for NCV6356 operation. Feedback and  
compensation network are also fully integrated.  
It uses the AOT (Adaptive OnTime) control scheme and  
can operate in two different modes: PFM and PPWM  
(PseudoPWM). The transition between modes can occur  
automatically or the switcher can be placed in forced PPWM  
This current limitation is particularly useful to protect the  
inductor. The peak current can be set by writing  
IPEAK[1..0] bits in the LIMCONF register.  
2
mode by I C programming (PPWMVSEL0 / PPWMVSEL1  
bits of COMMAND register).  
PPWM (Pseudo Pulse Width Modulation) Operating Mode  
In medium and high load conditions, NCV6356 operates  
in PPWM mode to regulate the desired output voltage. In  
this mode, the inductor current is in CCM (Continuous  
Conduction Mode) and the AOT guaranties a pseudofixed  
frequency with 10% accuracy. The internal NMOSFET  
switch operates as synchronous rectifier and is driven  
complementary to the PMOSFET switch.  
Table 5. IPEAK VALUES  
OPN  
IPEAK[1..0]  
Inductor Peak Current (A)  
5.2 – for 3.5 output current  
5.8 – for 4.0 output current  
6.2 – for 4.5 output current  
6.8 – for 5.0 output current  
7.0 – for 5.3 output current  
7.7 – for 5.8 output current  
8.2 – for 6.3 output current  
8.8 – for 6.8 output current  
NCV6356B  
NCV6356C  
00  
01  
10  
11  
00  
01  
10  
11  
NCV6356Q  
PFM (Pulse Frequency Modulation) Operating Mode  
In order to save power and improve efficiency at low  
loads, the NCV6356 operates in PFM mode as the inductor  
current drops into DCM (Discontinuous Conduction Mode).  
The upper FET ontime is kept constant and the switching  
frequency becomes proportional to the loading current. As  
it does in PPWM mode, the internal NMOSFET operates  
as a synchronous rectifier after each PMOSFET onpulse  
until there is no longer current in the coil.  
Output Voltage  
The output voltage is set internally by an integrated  
resistor bridge and no extra components are needed to set the  
output voltage. Writing in the VoutVSEL0[6..0] bits of the  
PROGVSEL0 register or VoutVSEL1[6..0] bits of the  
PROGVSEL1 register will change the output voltage. The  
output voltage level can be programmed by 6.26 mV steps  
between 0.6 V to 1.39375 V. The VSEL pin and VSELGT  
bit will determine which register between PROGVSEL0  
and PROGVSEL1 will set the output voltage.  
If VSELGT = 1 AND VSEL=0 ³ Output voltage is set  
by VoutVSEL0[6..0] bits (PROGVSEL0 register)  
Else ³ Output voltage is set by VoutVSEL1[6..0] bits  
(PROGVSEL1 register)  
When the load increases and the current in the inductor  
become continuous again, the controller automatically turns  
back to PPWM mode.  
Forced PPWM  
The NCV6356 can be programmed to only use PPWM  
and the transition to PFM can be disabled if so desired,  
2
thanks to the PPWMVSEL0 or PPWMVSEL1 I C bits  
(COMMAND register).  
www.onsemi.com  
14  
NCV6356  
Under Voltage Lock Out (UVLO)  
Enabling  
NCV6356 core does not operate for voltages below the  
Under Voltage Lock Out (UVLO) level. Below the UVLO  
threshold, all internal circuitry (both analog and digital) is  
held in reset. NCV6356 operation is guaranteed down to  
UVLO as the battery voltage is dropping off. To avoid erratic  
on / off behavior, a maximum 200 mV hysteresis is  
implemented. Restart is guaranteed at 2.7 V when the VBAT  
voltage is recovering or rising.  
The EN pin controls NCV6356 start up. EN pin Low to  
High transition starts the power up sequencer. If EN is low,  
the DC to DC converter is turned off and device enters:  
2
Sleep Mode if Sleep_Mode I C bit is high or VSEL is  
2
high or I C pull up present,  
2
Off Mode if Sleep_Mode I C bit and VSEL are low and  
2
no I C pull up.  
When EN pin is set to a high level, the DC to DC converter  
can be enabled / disabled by writing the ENVSEL0 or  
ENVSEL1 bit of the PROGVSEL0 and PROGVSEL1  
registers:  
Thermal Management  
Thermal Shut Down (TSD)  
The thermal capability of the NCV6356 can be exceeded  
due to the step down converter output stage power level. A  
thermal protection circuitry with associated interrupt is  
therefore implemented to prevent the IC from damage. This  
protection circuitry is only activated when the core is in  
active mode (output voltage is turned on). During thermal  
shut down, output voltage is turned off.  
2
Enx I C bit is high, the DC to DC converter is  
activated.  
2
Enx I C is low, the DC to DC converter is turned off  
and the device enters in Sleep Mode.  
A built in pull down resistor disables the device when this  
pin is left unconnected or not driven. EN pin activity does  
not generate any digital reset.  
During thermal shut down, the output voltage is turned  
off.  
When NCV6356 returns from thermal shutdown, it can  
restart in 2 different configurations depending on the  
REARM bit in the LIMCONF register (refer to the register  
description section):  
If REARM = 0 then NCV6356 does not restart after  
TSD. To restart, an EN pin toggle is required.  
If REARM = 1, NCV6356 restarts with register values  
set prior to thermal shutdown.  
Power Up Sequence (PUS)  
In order to power up the circuit, the input voltage AVIN  
has to rise above the VUVLO threshold. This triggers the  
internal core circuitry power up which is the “Wake Up  
Time” (including “Bias Time”)  
This delay is internal and cannot be bypassed. EN pin  
transition within this delay corresponds to the “Initial power  
up sequence” (IPUS):  
The thermal shut down threshold is set at 150°C (typical)  
and a 30°C hysteresis is implemented in order to avoid  
erratic on / off behavior. After a typical 150°C thermal shut  
down, NCV6356 will resume to normal operation when the  
die temperature cools to 120°C.  
AVIN  
UVLO  
POR  
EN  
Thermal Warnings  
In addition to the TSD, the die temperature monitoring  
DELAY[2..0]  
VOUT  
~ 80 us  
32 us  
circuitry includes  
a thermal warning and thermal  
prewarning sensor and interrupts. These sensors can  
inform the processor that NCV6356 is close to its thermal  
shutdown and preventive measures to cool down die  
temperature can be taken by software.  
Wake up  
Time  
Init DVS ramp  
Time  
Time  
Figure 40. Initial Power Up Sequence  
The Warning threshold is set by hardware to 135°C  
typical. The PreWarning threshold is set by default to  
105°C but it can be changed by setting the TPWTH[1..0] bits  
in the LIMCONF register.  
In addition a user programmable delay will also take place  
between the Wake Up Time and the Init time: The  
DELAY[2..0] bits of the TIME register will set this user  
programmable delay with a 2 ms resolution. With default  
delay of 0 ms, the NCV6356 IPUS takes roughly 100 ms, and  
the DC to DC converter output voltage will be ready within  
150 ms.  
Active Output Discharge  
To make sure that no residual voltage remains in the power  
supply rail when disabled, an active discharge path can  
ground the NCV6356 output voltage. For maximum  
flexibility, this feature can be easily disabled or enabled with  
the DISCHG bit in the PGOOD register. By default the  
discharge path is enabled and is activated during the first  
100 ms after battery insertion.  
The power up output voltage is defined by the VSEL state.  
2
NOTE: During the Wake Up time, the I C interface is  
2
not active. Any I C request to the IC during this  
time period will result in a NACK reply.  
www.onsemi.com  
15  
NCV6356  
Normal, Quick and Fast Power Up Sequence  
In addition the delay set in DELAY[2..0] bits in TIME  
register will apply only for the EN pins turn ON sequence  
(NPUS and QPUS).  
The previous description applies only when the EN  
transitions during the internal core circuitry power up (Wake  
up and calibration time). Otherwise 3 different cases are  
possible:  
Enabling the part by setting the EN pin from Off Mode  
will result in “Normal power up sequence” (NPUS,  
with DELAY;[2..0]).  
Enabling the part by setting the EN pin from Sleep  
Mode will result in “Quick power up sequence”  
(QPUS, with DELAY;[2..0]).  
Enabling the DC to DC converter, whereas EN is  
already high, either by setting the ENVSEL0 or  
ENVSEL1 bits or by VSEL pin transition will results in  
“Fast power up sequence” (FPUS, without  
DELAY[2..0]).  
The power up output voltage is defined by VSEL state.  
DC to DC Converter Shut Down  
When shutting down the device, no shut down sequence  
is required. The output voltage is disabled and, depending on  
the DISCHG bit state of the PGOOD register, the output may  
be discharged.  
DC to DC converter shutdown is initiated by either  
grounding the EN pin (Hardware Shutdown) or, depending  
on the VSEL internal signal level, by clearing the ENVSEL0  
or ENVSEL1 bits (Software shutdown) in the PROGVSEL0  
or PROGVSEL1 registers.  
In hardware shutdown (EN = 0), the internal core is still  
active and I C accessible.  
The internal core of the NCV6356 shuts down when AVIN  
falls below UVLO.  
AVIN  
UVLO  
POR  
Dynamic Voltage Scaling (DVS)  
The NCV6356 supports dynamic voltage scaling (DVS)  
allowing the output voltage to be reprogrammed via I C  
EN  
O
F
F
2
commands and provides the different voltages required by  
the processor. The change between set points is managed in  
a smooth fashion without disturbing the operation of the  
processor.  
When programming a higher voltage, the output raises  
with controlled dV/dt defined by DVS[1..0] bits in the TIME  
register. When programming a lower voltage the output  
voltage will decrease accordingly. The DVS step is fixed and  
the speed is programmable.  
DELAY[2..0]  
M
O
D
E
60 us  
32 us  
TFTR Bias  
Time  
Init  
Time  
DVS ramp  
Time  
Figure 41. Normal Power Up Sequence  
AVIN  
The DVS sequence is automatically initiated by changing  
the output voltage settings. There are two ways to change  
these settings:  
UVLO  
POR  
S
EN  
L
E
E
P
Directly change the active setting register value  
(VoutVSEL0[6..0] of the PROGVSEL0 register or  
VoutVSEL1[6..0] of the PROGVSEL1 register) via an  
DELAY[2..0]  
M
O
D
E
10 us  
32 us  
2
I C command  
TFTR Bias  
Time  
Init  
Time  
DVS ramp  
Time  
Change the VSEL internal signal level by toggling the  
VSEL pin.  
Figure 42. Quick Power Up Sequence  
2
The second method eliminates the I C latency and is  
therefore faster.  
AVIN  
The DVS transition mode can be changed with the  
DVSMODE bit in the COMMAND register:  
In forced PPWM mode when accurate output voltage  
control is needed. Rise and fall time are controlled with  
the DVS[1..0] bits.  
UVLO  
POR  
S
L
E
E
P
VSEL  
VOUT  
M
O
D
E
32 us  
T
Init  
Time  
DVS ramp  
Time  
Figure 43. Fast Power Up Sequence  
www.onsemi.com  
16  
NCV6356  
Internal  
DVS ramp  
V2  
Internal  
Reference  
Output  
Voltage  
nV  
V2  
nt  
V1  
V1  
DVS  
up  
DVS  
down  
Figure 44. DVS in Forced PPWM Mode Diagram  
PG  
In Auto mode when the output voltage must not be  
discharged. Rise time is controlled by the DVS[1..0],  
and fall time depends of the load and cannot be faster  
than the DVS[1..0] settings.  
Figure 47. Power Good during DVS Transition  
Digital IO Settings  
Output  
Voltage  
V2  
Internal  
Reference  
nV  
VSEL Pin  
nt  
By changing VSEL pin levels, the user has a latency free  
way to change NCV6356 configuration: operating mode  
(Auto or PWM forced), the output voltage as well as enable.  
V1  
Figure 45. DVS in Auto Mode Diagram  
Table 6. VSEL PIN PARAMETERS  
Power Good Indicator  
Parameter VSEL  
Pin Can Set  
REGISTER  
VSEL = LOW  
REGISTER  
VSEL = HIGH  
To indicate the output voltage level is established, a power  
good signal is available. The power good signal is low when  
the DC to DC converter is off. Once the output voltage  
reaches 95% of the expected output level, the power good  
logic signal becomes high (ACK_PG, SEN_PG bits).  
During operation, when the output drops below 90% of  
the programmed level, the power good logic signal goes low,  
indicating a power failure. When the voltage rises again to  
above 95%, the power good signal goes high again.  
During a DVS sequence, the Power Good signal is set low  
during the transition and goes back high once the transition  
is completed.  
ENABLE  
ENVSEL0  
ENVSEL1  
PROGVSEL1[7]  
PROGVSEL0[7]  
VOUT  
VoutVSEL0[6..0]  
VoutVSEL1[6..0]  
OPERATING MODE  
(Auto / PPWM  
Forced)  
PWMVSEL0  
COMMAND[7]  
PWMVSEL1  
COMMAND[6]  
VSEL pin action can be masked by writing 0 to the  
VSELGT bit in the COMMAND register. In that case I C bit  
corresponding to VSEL high will be taken into account.  
2
The Power Good signal during normal operation can be  
disabled by clearing the PGDCDC bit in the PGOOD  
register. The Power good operation during DVS can be  
activated with PGDVS bit if the PGOOD register.  
EN pin  
The EN pin can be gated by writing the ENVSEL0 or  
ENVSEL1 bits of the PROGVSEL0 and PROGVSEL1  
registers, depending on which register is activated by the  
VSEL internal signal.  
DCDC_EN  
Interrupt Pin (Optional)  
95%  
90%  
32 us  
The interrupt controller continuously monitors internal  
interrupt sources, generating an interrupt signal when a  
system status change is detected (dual edge monitoring).  
DCDC  
3.5  
14 us  
3.5−  
14 us  
3.5 us  
PG  
Table 7. INTERRUPT SOURCES  
Interrupt  
Figure 46. Power Good Signal when PGDCDC = 1  
Name  
Description  
TSD  
Thermal Shut Down  
TWARN  
TPREW  
UVLO  
IDCDC  
ISHORT  
PG  
Thermal Warning  
Thermal Pre Warning  
Under Voltage Lock Out  
DC to DC converter Current Over / below limit  
DC to DC converter ShortCircuit Protection  
Power Good  
www.onsemi.com  
17  
NCV6356  
Individual bits generating interrupts will be set to 1 in the  
INT_ACK register (I C read only registers), indicating the  
TWARN  
2
SEN_TWARN  
MSK_TWARN  
interrupt source. INT_ACK register is automatically reset  
2
by an I C read. The INT_SEN register (read only register)  
contains real time indicators of interrupt sources.  
All interrupt sources can be masked by writing in the  
register INT_MSK. Masked sources will never generate an  
interrupt request on the INTB pin.  
ACK_TWARN  
INTB  
I@C access on INT_ACK  
read  
read  
read  
read  
The INTB pin is an open drain output. A nonmasked  
interrupt request will result in the INTB pin being driven  
low.  
When the host reads the INT_ACK registers the INTB pin  
is released to high impedance and the interrupt register  
INT_ACK is cleared.  
Figure 48. TWARN Interrupt Operation Example  
Configurations  
Default output voltages, enables, DCDC modes, current  
limit and other parameters can be factory programmed upon  
request.  
Figure 48 is an example of a TWARN event of the INTB  
2
Below is the default configurations predefined:  
pin with INT_SEN/INT_MSK/INT_ACK and an I C read  
access behavior.  
Table 8. NCV6356 CONFIGURATION  
5.0 A  
5.0 A  
6.8 A  
NCV6356CM  
NCV6356BM  
NCV6356QM  
Configuration  
2
Default I C address  
ADD1 – 14h : 0010100R/W  
ADD1 – 14h : 0010100R/W  
ADD6 68h : 1101000R/W  
PID product identification  
RID revision identification  
FID feature identification  
20h  
Metal  
00h  
20h  
Metal  
01h  
20h  
Metal  
02h  
Default VOUT – VSEL=1  
Default VOUT – VSEL=0  
Default MODE – VSEL=1  
Default MODE – VSEL=0  
Default IPEAK  
1.15 V  
1.15 V  
1.20 V  
1.20 V  
0.90625 V  
0.875 V  
Forced PPWM  
Auto mode  
6.8 A  
Forced PPWM  
Auto mode  
6.8 A  
Forced PPWM  
Forced PPWM  
8.8 A  
OPN  
NCV6356CMTWTXG  
6356C  
NCV6356BMTWTXG  
6356B  
NCV6356QMTWTXG  
6356Q  
Marking  
www.onsemi.com  
18  
 
NCV6356  
I2C Compatible Interface  
NCV6356 can support a subset of the I C protocol as  
detailed below.  
2
I2C Communication Description  
FROM MCU to NCPxxxx  
FROM NCPxxxx to MCU  
READ OUT FROM PART  
START  
START  
ACK  
ACK  
/ACK  
STOP  
IC ADDRESS  
1
DATA 1  
DATA n  
1 à READ  
/ACK  
ACK  
ACK  
ACK  
STOP  
WRITE INSIDE PART  
IC ADDRESS  
0
DATA1  
DATA n  
If PART does not Acknoleg,ethe /NACK will be followed by a STOP or(Srerpeated star)t.  
If PART Acknolege,sthe ACK can be followed by another data or Stop or Sr  
à
0
WRITE  
Figure 49. General Protocol Description  
The first byte transmitted is the Chip address (with the  
LSB bit set to 1 for a read operation, or set to 0 for a Write  
operation). The following data will be:  
During a Write operation, the register address (@REG)  
is written in followed by the data. The writing process  
is autoincremental, so the first data will be written in  
@REG, the contents of @REG are incremented and the  
next data byte is placed in the location pointed to by  
@REG + 1 ..., etc.  
last write operation. Like the writing process, the  
reading process is autoincremental.  
Read Sequence  
The Master will first make a “Pseudo Write” transaction  
with no data to set the internal address register. Then, a stop  
then start or a Repeated Start will initiate the read transaction  
from the register address the initial write transaction has  
pointed to:  
During a Read operation, the NCV6356 will output the  
data from the last register that has been accessed by the  
FROM MCU to NCPxxxx  
FROM NCPxxxx to MCU  
SETS INTERNAL  
REGISTER POINTER  
START  
ACK  
ACK  
STOP  
IC ADDRESS  
0
REGISTER ADDRESS  
à
0
WRITE  
START  
ACK  
ACK  
/ACK  
STOP  
IC ADDRESS  
1
DATA1  
DATA n  
REGISTER ADDRESS  
VALUE  
REGISTER ADDRESS + (n 1)  
VALUE  
n REGISTERS READ  
à
1
READ  
Figure 50. Read Sequence  
The first WRITE sequence will set the internal pointer to  
the register that is selected. Then the read transaction will  
start at the address the write transaction has initiated.  
www.onsemi.com  
19  
NCV6356  
Write Sequence  
Write operation will be achieved by only one transaction.  
After chip address, the REG address has to be set, then  
following data will be the data we want to write in REG,  
REG + 1, REG + 2, ..., REG +n.  
Write n Registers:  
FROM MCU to NCPxxxx  
FROM NCPxxxx to MCU  
SETS INTERNAL  
REGISTER POINTER  
WRITE VALUE IN  
REGISTER REG0 + (n1)  
WRITE VALUE IN  
REGISTER REG0  
START  
ACK  
ACK  
ACK  
ACK  
STOP  
IC ADDRESS  
0
REGISTER REG0 ADDRESS  
REG VALUE  
REG+ (n – 1) VALUE  
n REGISTERS WRITE  
à
0
WRITE  
Figure 51. Write Sequence  
Write then Read Sequence  
With Stop Then Start  
FROM MCU to NCPxxxx  
FROM NCPxxxx to MCU  
SETS INTERNAL  
REGISTER POINTER  
WRITE VALUE IN  
REGISTER REG0 + (n1)  
WRITE VALUE IN  
REGISTER REG0  
START  
ACK  
ACK  
ACK  
ACK  
STOP  
IC ADDRESS  
0
REGISTER REG0 ADDRESS  
REG VALUE  
REG + (n1) VALUE  
n REGISTERS WRITE  
à
0
WRITE  
START  
ACK  
ACK  
/ACK  
STOP  
IC ADDRESS  
1
DATA 1  
DATA k  
REGISTER REG+ (n1)  
VALUE  
REGISTER ADDRESS + (n 1) +  
(k 1) VALUE  
k REGISTERS READ  
à
1
READ  
Figure 52. Write Followed by Read Transaction  
www.onsemi.com  
20  
NCV6356  
I2C Address  
settings can be generated upon request to  
ON Semiconductor. See Table 8 (NCV6356 Configuration)  
for the default I C address.  
2
The NCV6356 has 8 available I C addresses selectable by  
factory settings (ADD0 to ADD7). Different address  
2
Table 9. I2C ADDRESS  
2
I C Address  
Hex  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
ADD0  
W 0x20  
R 0x21  
0
0
1
0
0
0
0
R/W  
Add  
0x10  
0
ADD1  
ADD2  
ADD3  
ADD4  
ADD5  
ADD6  
ADD7  
W 0x28  
R 0x29  
0
0
0
1
1
1
1
0
0
0
1
1
1
1
1
1
1
0
0
0
0
1
0
1
0
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
R/W  
Add  
0x14  
1
W 0x30  
R 0x31  
R/W  
Add  
0x18  
1
W 0x38  
R 0x39  
R/W  
Add  
0x1C  
0
W 0xC0  
R 0xC1  
R/W  
Add  
0x60  
0
W 0xC8  
R 0xC9  
R/W  
Add  
0x64  
1
W 0xD0  
R 0xD1  
R/W  
Add  
0x68  
1
W 0xD8  
R 0xD9  
R/W  
Add  
0x6C  
www.onsemi.com  
21  
NCV6356  
Register Map  
The tables below describe the I C registers.  
2
Registers / bits Operations:  
R
RC  
Read only register  
Read then Clear  
RW  
Read and Write register  
Reserved  
Spare  
Address is reserved and register / bit is not physically designed  
Address is reserved and register / bit is physically designed  
Table 10. I2C REGISTERS MAP CONFIGURATION (NCV6356C)  
Add.  
00h  
Register Name  
INT_ACK  
INT_SEN  
INT_MSK  
PID  
Type  
RC  
R
Def.  
00h  
01h  
FFh  
20h  
Metal  
00h  
Function  
Interrupt register  
01h  
Sense register (real time status)  
02h  
RW  
R
Mask register to enable or disable interrupt sources (trim)  
Product Identification  
03h  
04h  
RID  
R
Revision Identification  
05h  
FID  
R
Features Identification (trim)  
06h to 0Fh  
10h  
Reserved for future use  
PROGVSEL1  
PROGVSEL0  
PGOOD  
TIME  
RW  
RW  
RW  
RW  
RW  
D8h  
D8h  
10h  
09h  
43h  
Output voltage settings and EN for VSEL pin = High (trim)  
Output voltage settings and EN for VSEL pin = Low (trim)  
Power good and active discharge settings (trim)  
Enabling and DVS timings (trim)  
Enabling and Operating mode Command register (trim)  
Reserved for future use  
11h  
12h  
13h  
14h  
COMMAND  
15h  
16h  
LIMCONF  
RW  
E3h  
Reset and limit configuration register (trim)  
Reserved for future use  
17h to 1Fh  
20h to FFh  
Reserved. Test Registers  
Table 11. I2C REGISTERS MAP CONFIGURATION (NCV6356B)  
Add.  
00h  
Register Name  
INT_ACK  
INT_SEN  
INT_MSK  
PID  
Type  
RC  
R
Def.  
00h  
01h  
FFh  
20h  
Metal  
01h  
Function  
Interrupt register  
01h  
Sense register (real time status)  
02h  
RW  
R
Mask register to enable or disable interrupt sources (trim)  
Product Identification  
03h  
04h  
RID  
R
Revision Identification  
05h  
FID  
R
Features Identification (trim)  
06h to 0Fh  
10h  
Reserved for future use  
PROGVSEL1  
PROGVSEL0  
PGOOD  
TIME  
RW  
RW  
RW  
RW  
RW  
E0h  
E0h  
10h  
09h  
43h  
Output voltage settings and EN for VSEL pin = High (trim)  
Output voltage settings and EN for VSEL pin = Low (trim)  
Power good and active discharge settings (trim)  
Enabling and DVS timings (trim)  
Enabling and Operating mode Command register (trim)  
Reserved for future use  
11h  
12h  
13h  
14h  
COMMAND  
15h  
16h  
LIMCONF  
RW  
E3h  
Reset and limit configuration register (trim)  
Reserved for future use  
17h to 1Fh  
20h to FFh  
Reserved. Test Registers  
www.onsemi.com  
22  
NCV6356  
Table 12. I2C REGISTERS MAP CONFIGURATION (NCV6356Q)  
Add.  
00h  
Register Name  
INT_ACK  
INT_SEN  
INT_MSK  
PID  
Type  
RC  
R
Def.  
00h  
01h  
FFh  
20h  
Metal  
02h  
Function  
Interrupt register  
01h  
Sense register (real time status)  
02h  
RW  
R
Mask register to enable or disable interrupt sources (trim)  
Product Identification  
03h  
04h  
RID  
R
Revision Identification  
05h  
FID  
R
Features Identification (trim)  
06h to 0Fh  
10h  
Reserved for future use  
PROGVSEL1  
PROGVSEL0  
PGOOD  
TIME  
RW  
RW  
RW  
RW  
RW  
B1h  
ACh  
10h  
09h  
C3h  
Output voltage settings and EN for VSEL pin = High (trim)  
Output voltage settings and EN for VSEL pin = Low (trim)  
Power good and active discharge settings (trim)  
Enabling and DVS timings (trim)  
Enabling and Operating mode Command register (trim)  
Reserved for future use  
11h  
12h  
13h  
14h  
COMMAND  
15h  
16h  
LIMCONF  
RW  
E3h  
Reset and limit configuration register (trim)  
Reserved for future use  
17h to 1Fh  
20h to FFh  
Reserved. Test Registers  
Registers Description  
Table 13. INTERRUPT ACKNOWLEDGE REGISTER  
Name: INTACK  
Address: 00h  
Type: RC  
Default: 00000000b (00h)  
Trigger: Dual Edge [D7..D0]  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
ACK_TSD  
ACK_TWARN  
ACK_TPREW  
Spare = 0  
ACK_ISHORT  
ACK_UVLO  
ACK_IDCDC  
ACK_PG  
Bit  
Bit Description  
ACK_PG  
ACK_IDCDC  
ACK_UVLO  
ACK_ISHORT  
ACK_TPREW  
ACK_TWARN  
ACK_TSD  
Power Good Sense Acknowledgement  
0: Cleared  
1: DCDC Power Good Event detected  
DCDC Over Current Sense Acknowledgement  
0: Cleared  
1: DCDC Over Current Event detected  
Under Voltage Sense Acknowledgement  
0: Cleared  
1: Under Voltage Event detected  
DCDC ShortCircuit Protection Sense Acknowledgement  
0: Cleared  
1: DCDC Short circuit protection detected  
Thermal Pre Warning Sense Acknowledgement  
0: Cleared  
1: Thermal Pre Warning Event detected  
Thermal Warning Sense Acknowledgement  
0: Cleared  
1: Thermal Warning Event detected  
Thermal Shutdown Sense Acknowledgement  
0: Cleared  
1: Thermal Shutdown Event detected  
www.onsemi.com  
23  
NCV6356  
Table 14. INTERRUPT SENSE REGISTER  
Name: INTSEN  
Type: R  
Address: 01h  
Default: 00000000b (00h)  
Trigger: N/A  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
SEN_TSD  
SEN_TWARN  
SEN_TPREW  
Spare = 0  
SEN_ISHORT  
SEN_UVLO  
SEN_IDCDC  
SEN_PG  
Bit  
Power Good Sense  
0: DCDC Output Voltage below target  
Bit Description  
SEN_PG  
1: DCDC Output Voltage within nominal range  
SEN_IDCDC  
SEN_UVLO  
SEN_ISHORT  
SEN_TPREW  
SEN_TWARN  
SEN_TSD  
DCDC over current sense  
0: DCDC output current is below limit  
1: DCDC output current is over limit  
Under Voltage Sense  
0: Input Voltage higher than UVLO threshold  
1: Input Voltage lower than UVLO threshold  
DCDC ShortCircuit Protection Sense  
0: ShortCircuit detected not detected  
1: ShortCircuit not detected  
Thermal Pre Warning Sense  
0: Junction temperature below thermal prewarning limit  
1: Junction temperature over thermal prewarning limit  
Thermal Warning Sense  
0: Junction temperature below thermal warning limit  
1: Junction temperature over thermal warning limit  
Thermal Shutdown Sense  
0: Junction temperature below thermal shutdown limit  
1: Junction temperature over thermal shutdown limit  
www.onsemi.com  
24  
NCV6356  
Table 15. INTERRUPT MASK REGISTER  
Name: INTMSK  
Type: RW  
Address: 02h  
Default: See Register map  
Trigger: N/A  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
MSK_TSD  
MSK_TWARN  
MSK_TPREW  
Spare = 1  
MSK_ISHORT  
MSK_UVLO  
MSK_IDCDC  
MASK_PG  
Bit  
Bit Description  
MSK_PG  
MSK_IDCDC  
MSK_UVLO  
MSK_ISHORT  
MSK_TPREW  
MSK_TWARN  
MSK_TSD  
Power Good interrupt source mask  
0: Interrupt is Enabled  
1: Interrupt is Masked  
DCDC over current interrupt source mask  
0: Interrupt is Enabled  
1: Interrupt is Masked  
Under Voltage interrupt source mask  
0: Interrupt is Enabled  
1: Interrupt is Masked  
DCDC ShortCircuit Protection source mask  
0: Interrupt is Enabled  
1: Interrupt is Masked  
Thermal Pre Warning interrupt source mask  
0: Interrupt is Enabled  
1: Interrupt is Masked  
Thermal Warning interrupt source mask  
0: Interrupt is Enabled  
1: Interrupt is Masked  
Thermal Shutdown interrupt source mask  
0: Interrupt is Enabled  
1: Interrupt is Masked  
Table 16. PRODUCT ID REGISTER  
Name: PID  
Type: R  
Address: 03h  
Default: 00011011b (20h)  
Reset on N/A  
Trigger: N/A  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
PID_7  
PID_6  
PID_5  
PID_4  
PID_3  
PID_2  
PID_1  
PID_0  
Table 17. REVISION ID REGISTER  
Name: RID  
Type: R  
Address: 04h  
Default: Metal  
Trigger: N/A  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
RID_7  
RID_6  
RID_5  
RID_4  
RID_3  
RID_2  
RID_1  
RID_0  
Bit  
RID[7..0]  
Bit Description  
Revision Identification  
00000000: First Silicon  
00000001: Final Silicon  
www.onsemi.com  
25  
NCV6356  
Table 18. FEATURE ID REGISTER  
Name: FID  
Type: R  
Address: 05h  
Default: See Register map  
Trigger: N/A  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
Spare  
Spare  
Spare  
Spare  
FID_3  
FID_2  
FID_1  
FID_0  
Bit  
FID[3..0]  
Bit Description  
Feature Identification  
00000000: NCV6356C 5.0 A, 1.15 V configuration  
00000001: NCV6356B 5.0 A, 1.20 V configuration  
00000010: NCV6356Q 6.8 A, 0.875 V 0.906 V configuration  
Table 19. DC TO DC VOLTAGE PROG (VSEL = 1) REGISTER  
Name: PROGVSEL1  
Type: RW  
Trigger: N/A  
D7  
Address: 10h  
Default: See Register map  
D6  
D5  
D4  
D3  
VoutVSEL1[6..0]  
Bit Description  
D2  
D1  
D0  
ENVSEL1  
Bit  
VoutVSEL1[6..0]  
Sets the DC to DC converter output voltage when VSEL pin = 1 and VSEL pin function is enabled in register  
COMMAND.D0, or when VSEL pin function is disabled in register COMMAND.D0  
0000000b = 600 mV 1111111b = 1393.75 mV (steps of 6.25 mV)  
ENVSEL1  
EN Pin Gating for VSEL internal signal = High  
0: Disabled  
1: Enabled  
Table 20. DC TO DC VOLTAGE PROG (VSEL = 0) REGISTER  
Name: PROGVSEL0  
Type: RW  
Trigger: N/A  
D7  
Address: 11h  
Default: See Register map  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
ENVSEL0  
Bit  
VoutVSEL0[6..0]  
Bit Description  
VoutVSEL0[6..0]  
Sets the DC to DC converter output voltage when VSEL pin = 0 and VSEL pin function is enabled in regis-  
ter COMMAND.D0  
0000000b = 600 mV 1111111b = 1393.75 mV (steps of 6.25 mV)  
ENVSEL0  
EN Pin Gating for VSEL internal signal = Low  
0: Disabled  
1: Enabled  
www.onsemi.com  
26  
NCV6356  
Table 21. POWER GOOD REGISTER  
Name: PGOOD  
Type: RW  
Address: 12h  
Default: See Register map  
Trigger: N/A  
D7  
D6  
D5  
D4  
D3  
Spare = 0  
D2  
D1  
D0  
Spare = 0  
Bit  
Spare = 0  
Spare = 0  
DISCHG  
Spare = 0  
PGDVS  
PGDCDC  
Bit Description  
PGDCDC  
Power Good Enabling  
0 = Disabled  
1 = Enabled  
PGDVS  
Power Good Active On DVS  
0 = Disabled  
1 = Enabled  
DISCHG  
Active discharge bit Enabling  
0 = Discharge path disabled  
1 = Discharge path enabled  
Table 22. TIMING REGISTER  
Name: TIME  
Address: 13h  
Default: See Register map  
Type: RW  
Trigger: N/A  
D7  
D6  
D5  
D4  
D3  
D2  
Spare = 0  
Bit Description  
D1  
D0  
DELAY[2..0]  
DVS[1..0]  
DBN_Time[1..0]  
Bit  
DBN_Time[1..0]  
DVS[1..0]  
EN and VSEL debounce time  
00 = No debounce  
01 = 12 us  
10 = 23 us  
11 = 34 us  
DVS Speed  
00 = 6.25 mV step / 0.333 us  
01 = 6.25 mV step / 0.666 us  
10 = 6.25 mV step / 1.333 us  
11 = 6.25 mV step / 2.666 us  
DELAY[2..0]  
Delay applied upon enabling (ms)  
000b = 0 ms – 111b = 14 ms (Steps of 2 ms)  
www.onsemi.com  
27  
NCV6356  
Table 23. COMMAND REGISTER  
Name: COMMAND  
Type: RW  
Address: 14h  
Default: See Register map  
Trigger: N/A  
D7  
PPWMVSEL0  
Bit  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
PPWMVSEL1  
DVSMODE  
Sleep_Mode  
Spare = 0  
Spare = 0  
Spare  
VSELGT  
Bit Description  
VSELGT  
VSEL Pin Gating  
0 = Disabled  
1 = Enabled  
Sleep_Mode  
DVSMODE  
Sleep mode  
0 = Low Iq mode when EN and VSEL low  
1 = Force product in sleep mode (when EN and VSEL are low)  
DVS transition mode selection  
0 = Auto  
1 = Forced PPWM  
PPWMVSEL1  
PPWMVSEL0  
Operating mode for MODE internal signal = High  
0 = Auto  
1 = Forced PPWM  
Operating mode for MODE internal signal = Low  
0 = Auto  
1 = Forced PPWM  
Table 24. LIMITS CONFIGURATION REGISTER  
Name: LIMCONF  
Type: RW  
Address: 16h  
Default: See Register map  
Trigger: N/A  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
IPEAK[1..0]  
Bit  
TPWTH[1..0]  
Spare = 0  
FORCERST  
RSTSTATUS  
REARM  
Bit Description  
REARM  
Rearming of device after TSD / ISHORT  
0: No rearming after TSD / ISHORT  
2
1: Rearming active after TSD / ISHORT with no reset of I C registers: new powerup sequence is initiat-  
2
ed with previously programmed I C registers values  
RSTSTATUS  
FORCERST  
TPWTH[1..0]  
Reset Indicator Bit  
0: Must be written to 0 after register reset  
1: Default (loaded after Registers reset)  
Force Reset Bit  
0 = Default value. Self cleared to 0  
1: Force reset of internal registers to default  
Thermal preWarning threshold settings  
00 = 83°C  
01 = 94°C  
10 = 105°C  
11 = 116°C  
IPEAK  
Inductor peak current settings  
00 = 5.2 A (for 3.5 A output current)  
01 = 5.8 A (for 4.0 A output current)  
10 = 6.2 A (for 4.5 A output current)  
11 = 6.8 A (for 5.0 A output current)  
www.onsemi.com  
28  
NCV6356  
APPLICATION INFORMATION  
NCV6356  
Supply Input  
4.7 uF  
AVIN  
PVIN  
Supply Input  
Core  
AGND  
10 uF  
Thermal  
Protection  
DCDC  
5 A  
Enable Control EN  
Input  
SW  
Operating  
Mode  
Control  
330 nH  
Modular  
Driver  
Voltage VSEL  
Selection  
2x 22uF  
PGND  
FB  
Output  
Monitoring  
PGND  
Interrupt  
INTB  
DCDC  
2.4 MHz  
Controller  
Processor  
Core  
SDA  
Sense  
I@C  
Processor I@C  
Control Interface  
SCL  
Figure 53. Typical Application Schematic  
Output Filter Considerations  
The output filter introduces a double pole in the system at  
a frequency of:  
the FB pin to the system decoupling capacitor positive  
terminal.  
Components Selection  
1
fLC  
=
Inductor Selection  
The inductance of the inductor is chosen such that the  
2 p L C  
peaktopeak ripple current I  
is approximately 20% to  
L_PP  
The NCV6356 internal compensation network is  
optimized for a typical output filter comprising a 330 nH  
inductor and 47 uF capacitor as describes in the basic  
application schematic in Figure 53.  
50% of the maximum output current I  
. This  
OUT_MAX  
provides the best tradeoff between transient response and  
output ripple. The inductance corresponding to a given  
current ripple is:  
Voltage Sensing Considerations  
(VIN VOUT )VOUT  
L =  
In order to regulate the power supply rail, the NCV6356  
must sense its output voltage. The IC can support two  
sensing methods:  
Normal sensing: The FB pin should be connected to the  
output capacitor positive terminal (voltage to regulate).  
Remote sensing: The power supply rail sense should be  
made close to the system powered by the NCV6356.  
The voltage to the system is more accurate, since the  
PCB line impedance voltage drop is within the  
VIN fSW IL _ PP  
The selected inductor must have a saturation current  
rating higher than the maximum peak current which is  
calculated by:  
IL _ PP  
IL _ MAX = IOUT _ MAX  
+
2
The inductor must also have a high enough current rating  
to avoid selfheating. A low DCR is therefore preferred.  
Refer to Table 25 for recommended inductors.  
regulation loop. In this case, we recommend connecting  
Table 25. INDUCTOR SELECTION  
Value  
Size (L x l x T)  
(mm)  
Saturation Current  
Max (A)  
DCR Max at 255C  
(mW)  
(uH)  
0.33  
0.33  
0.33  
Supplier  
Cyntec  
Cyntec  
Cyntec  
Part #  
PIFE20161BR33MS11  
PIFE25201BR33MS11  
PIFE32251BR33MS11  
2.0 x 1.6 x 1.2  
2.5 x 2.0 x 1.2  
3.2 x 2.5 x 1.2  
4.0  
5.2  
6.5  
33  
17  
14  
www.onsemi.com  
29  
 
NCV6356  
Table 25. INDUCTOR SELECTION  
Value  
(uH)  
Size (L x l x T)  
Saturation Current  
Max (A)  
DCR Max at 255C  
(mW)  
(mm)  
Supplier  
TOKO  
TOKO  
TOKO  
TDK  
Part #  
DFE252012FHR33M  
DFE201612EHR33M  
FDSD0412HR33M  
VLS252012HBXR33M  
SPM5030TR35M  
0.33  
0.33  
0.33  
0.33  
0.35  
0.24  
2.5 x 2.0 x 1.2  
2.0 x 1.6 x 1.2  
4.2 x 4.2 x 1.2  
2.5 x 2.0 x 1.2  
7.1 x 6.5 x 3.0  
2.0 x 1.6 x 1.2  
5.1  
4.8  
7.5  
5.3  
14.9  
4.8  
13  
21  
19  
25  
TDK  
4
Chilisin  
HEI201612AR24MAUDG  
13.5  
Output Capacitor Selection  
The minimum input capacitance with respect to the input  
The output capacitor selection is determined by output  
voltage ripple and load transient response requirement. For  
high transient load performance a high output capacitor  
value must be used. For a given peaktopeak ripple current  
ripple voltage V  
is  
IN_PP  
IOUT  
(D D 2 )  
VOUT  
VIN  
_ MAX  
D =  
C IN _ MIN  
=
VIN _ PP fSW  
Where  
In addition, the input capacitor must be able to absorb the  
input current, which has a RMS value of  
I
in the inductor of the output filter, the output voltage  
L_PP  
ripple across the output capacitor is the sum of three  
components as shown below.  
IIN_RMS = IOUT_MAX DD2  
VOUT_PP [VOUT_PP(C) +VOUT_PP(ESR) +VOUT_PP(ESL)  
,
The input capacitor also must be sufficient to protect the  
device from over voltage spikes, and a 4.7 uF capacitor or  
greater is required. The input capacitor should be located as  
close as possible to the IC. All PGND pins must be  
connected together to the ground terminal of the input cap  
which then must be connected to the ground plane. All PVIN  
pins must be connected together to the Vbat terminal of the  
input cap which then connects to the Vbat plane.  
With:  
IL _ PP  
VOUT _ PP (C )  
=
8 C fSW  
VOUT _ PP(ESR) = IL_ PP ESR  
LESL  
VOUT  
=
VIN  
Power Capability  
The NCV6356’s power capability is driven by the  
_ PP (ESL )  
L
difference in temperature between the junction (T ) and  
Where the peaktopeak ripple current is given by  
(VIN VOUT )VOUT  
J
ambient (T ), the junctiontoambient thermal resistance  
A
(Rq ), and the onchip power dissipation (P ).  
IL _ PP  
=
JA  
IC  
VIN fSW L  
The onchip power dissipation P can be determined as  
IC  
P = P P  
In applications with all ceramic output capacitors, the  
main ripple component of the output ripple is V  
IC  
T
L
with the total power losses P being  
T
.
OUT_PP(C)  
1
h
The minimum output capacitance can be calculated based on  
P = VOUT IOUT ⋅ ⎢ 1⎟  
T
where h is the efficiency and P  
a given output ripple requirement V  
operation mode.  
in PPWM  
OUT_PP  
L
P = ILOAD 2 DCR  
L
the simplified inductor power losses  
.
I L _ PP  
Now the junction temperature T can easily be calculated  
J
CMIN  
=
8 VOUT  
fSW  
_ PP  
TJ = RqJA P + TA  
IC  
as  
Please note that the T should stay within the  
recommended operating conditions.  
J
Input Capacitor Selection  
One of the input capacitor selection requirements is the  
input voltage ripple. To minimize the input voltage ripple  
and get better decoupling at the input power supply rail, a  
ceramic capacitor is recommended due to low ESR and ESL.  
The Rq is a function of the PCB layout (number of  
JA  
layers and copper and PCB size). For example, the  
NCV6356 mounted on the EVB has a Rq about 30°C/W.  
JA  
www.onsemi.com  
30  
NCV6356  
Layout Considerations  
AGND directly connected to the GND plane.  
Electrical Rules  
PGND directly connected to Cin input capacitor, and  
then connected to the GND plane: Local mini planes  
used on the top layer (green) and the layer just below  
the top layer (yellow) with laser vias.  
Good electrical layout is key to proper operation, high  
efficiency, and noise reduction. Electrical layout guidelines  
are:  
Use wide and short traces for power paths (such as  
PVIN, VOUT, SW, and PGND) to reduce parasitic  
inductance and highfrequency loop area. It is also  
good for efficiency improvement.  
The device should be well decoupled by input capacitor  
and the input loop area should be as small as possible to  
reduce parasitic inductance, input voltage spike, and  
noise emission.  
SW track should be wide and short to reduce losses and  
noise radiation.  
It is recommended to have separated ground planes for  
PGND and AGND and connect the two planes at one  
point. Try to avoid overlap of input ground loop and  
output ground loop to prevent noise impact on output  
regulation.  
Arrange a “quiet” path for output voltage sense, and  
make it surrounded by a ground plane.  
Thermal Rules  
Good PCB layout improves the thermal performance and  
thus allows for high power dissipation even with a small IC  
package. Thermal layout guidelines are:  
A four or more layers PCB board with solid ground  
planes is preferred for better heat dissipation.  
Figure 54. Placement Recommendation  
Use multiple vias around the IC to connect the inner  
ground layers to reduce thermal impedance.  
Use a large and thick copper area especially in the top  
layer for good thermal conduction and radiation.  
Use two layers or more for the high current paths  
(PVIN, PGND, SW) in order to split current into  
different paths and limit PCB copper selfheating.  
Component Placement  
Input capacitor placed as close as possible to the IC.  
PVIN directly connected to Cin input capacitor, and  
then connected to the Vin plane. Local mini planes used  
on the top layer (green) and the layer just below the top  
layer (yellow) with laser vias.  
Figure 55. Demo Board Example (INTB not used)  
AVIN connected to the Vin plane just after the  
capacitor.  
www.onsemi.com  
31  
NCV6356  
Table 26. ORDERING INFORMATION  
OPN  
Marking  
Configuration  
Package  
Shipping  
NCV6356CMTWTXG  
6356C  
6356B  
6356Q  
5.0 A  
DFN 3.0 x 4.0 mm  
3,000 Tape & Reel  
3,000 Tape & Reel  
3,000 Tape & Reel  
1.150 V / 1.150 V  
(PbFree)  
NCV6356BMTWTXG  
NCV6356QMTWTXG  
5.0 A  
1.200 V / 1.200 V  
DFN 3.0 x 4.0 mm  
(PbFree)  
5.0 A  
0.875 V / 0.906 V  
DFN 3.0 x 4.0 mm  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specification Brochure, BRD8011/D.  
Demo board available:  
The NCV6356GEVB/D evaluation board that  
configures the device in typical application to supply  
constant voltage.  
www.onsemi.com  
32  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WDFNW14 4x3, 0.5P  
CASE 511CM  
ISSUE B  
1
DATE 11 OCT 2019  
SCALE 2:1  
GENERIC  
MARKING DIAGRAM*  
XXXXX  
XXXXX  
AYWWG  
G
XXXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= PbFree Package  
(*Note: Microdot may be in either location)  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13091G  
WDFNW14 4x3, 0.5P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

相关型号:

NCV6357MTWATXG

Synchronous Buck Converter, Processor Supply, I2C Programming, 5.0 A
ONSEMI

NCV6357MTWBTXG

Synchronous Buck Converter, Processor Supply, I2C Programming, 5.0 A
ONSEMI

NCV6357MTWCTXG

Synchronous Buck Converter, Processor Supply, I2C Programming, 5.0 A
ONSEMI

NCV6357MTWDTXG

Synchronous Buck Converter, Processor Supply, I2C Programming, 5.0 A
ONSEMI

NCV6357MTWFTXG

Switching Regulator
ONSEMI

NCV662

100 mA CMOS Low Iq Low-Dropout Voltage Regulator
ONSEMI

NCV662SQ15T1

100 mA CMOS Low Iq Low-Dropout Voltage Regulator
ONSEMI

NCV662SQ15T1G

100 mA CMOS Low Iq Low-Dropout Voltage Regulator
ONSEMI

NCV662SQ15T1G

1.5V FIXED POSITIVE LDO REGULATOR, 0.95V DROPOUT, PDSO4, LEAD FREE, SC-82AB, SC-70, 4 PIN
ROCHESTER

NCV662SQ18T1

100 mA CMOS Low Iq Low-Dropout Voltage Regulator
ONSEMI

NCV662SQ18T1G

100 mA CMOS Low Iq Low-Dropout Voltage Regulator
ONSEMI

NCV662SQ18T1G

1.8V FIXED POSITIVE LDO REGULATOR, 0.7V DROPOUT, PDSO4, LEAD FREE, SC-82AB, SC-70, 4 PIN
ROCHESTER