NCV7321D10R2G [ONSEMI]
Stand Alone LIN Transceiver; 独立式LIN收发器
| 型号： | NCV7321D10R2G |
| 厂家： | 
ONSEMI |
| 描述： | Stand Alone LIN Transceiver |
| 文件： | 总12页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCV7321
Stand Alone LIN
Transceiver
Description
The NCV7321 is a fully featured local interconnect network (LIN)
transceiver designed to interface between a LIN protocol controller
and the physical bus. The transceiver is implemented in I3T
technology enabling both high−voltage analog circuitry and digital
functionality to co−exist on the same chip.
The NCV7321 LIN device is a member of the in−vehicle
networking (IVN) transceiver family. It is designed to work in harsh
automotive environment and is qualified following the TS16949 flow.
The LIN bus is designed to communicate low rate data from control
devices such as door locks, mirrors, car seats, and sunroofs at the
lowest possible cost. The bus is designed to eliminate as much wiring
as possible and is implemented using a single wire in each node. Each
node has a slave MCU−state machine that recognizes and translates
the instructions specific to that function. The main attraction of the
LIN bus is that all the functions are not time critical and usually relate
to passenger comfort.
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SOIC−8
8
CASE 751
1
PIN ASSIGNMENT
8
7
6
5
1
2
3
4
RxD
EN
INH
V
BB
WAKE
TxD
LIN
Features
GNI
• General
♦ SOIC−8 Green package (Pb−Free)
(Top View)
PC20040918.3
• LIN−Bus Transceiver
♦ LIN Compliant to Specification Revision 2.0 and 2.1 (Backwards
Compatible to Version 1.3) and J2602
♦ Bus Voltage $45 V
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
♦ Transmission Rate 1 kbps to 20 kbps
♦ Sleep Mode: LIN Transceiver Disabled, the
• Protection
Consumption from V is Minimized, INH Switch
BB
♦ Thermal Shutdown
is Off
♦ Indefinite Short−Circuit Protection on Pins LIN and
WAKE Towards Supply and Ground
♦ Load Dump Protection (45 V)
♦ Bus Pins Protected Against Transients in an
Automotive Environment
♦ Standby Mode: transition mode reached either after
power−up or after a wakeup event, INH switch is on
♦ Wake−up Bringing the Component from Sleep
Mode into Standby Mode is Possible either by LIN
Command or a Digital Signal on WAKE Pin (e.g.
External Switch)
• EMI Compatibility
♦ Integrated Slope Control
• These are Pb−Free Devices
• Modes
♦ Normal Mode: LIN Transceiver Enabled,
Communication via the LIN Bus is Possible, INH
Switch is On
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
June, 2010 − Rev. 8
NCV7321/D
NCV7321
KEY TECHNICAL CHARACTERISTICS AND OPERATING RANGES
Table 1. KEY TECHNICAL CHARACTERISTICS AND OPERATING RANGES
Symbol
Parameter
Nominal Battery Operating Voltage (Note 1)
Load Dump Protection
Min
Typ
Max
27
Unit
V
5
12
V
BB
45
I
_SLP
Supply Current in Sleep Mode
20
ꢀ A
V
BB
V
V
LIN Bus Voltage
−45
0
45
LIN
Operating DC Voltage on WAKE Pin
Maximum Rating Voltage on WAKE Pin
Operating DC Voltage on INH Pin
V
BB
V
WAKE
INH
−35
0
45
V
V
V
BB
V
V_Dig_IO
Operating DC Voltage on Digital IO Pins (EN, RxD, TxD)
Junction Thermal Shutdown Temperature
Operating Ambient Temperature
0
5.5
V
T
J
165
°C
°C
kV
kV
T
amb
−40
−4
+125
+4
V
ESD
Electrostatic Discharge Voltage (all pins) Human Body Model (Note 2)
Version NCV7321D11; no filter on LIN
−13
+13
Electrostatic Discharge Voltage (LIN) System Human Body Model (Note 3)
1. Below 5 V on V in normal mode, the bus will either stay recessive or comply with the voltage level specifications and transition time
BB
specifications as required by SAE J2602. It is ensured by the battery monitoring circuit.
2. Equivalent to discharging a 100 pF capacitor through a 1.5 kꢁ resistor conform to MIL STD 883 method 3015.7.
3. Equivalent to discharging a 150 pF capacitor through a 330 ꢁ resistor. System HBM levels are verified by an external test−house.
BLOCK DIAGRAM
INH
VBB
POR
VBB
State
&
Thermal
WAKE
EN
Wake−up
Control
shutdown
Osc
COMP
+
RxD
TxD
−
Filter
LIN
Slope Control
time−out
NCV7321
PD20070503.2
GND
Figure 1. Block Diagram
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NCV7321
TYPICAL APPLICATION
bat
ECU
VBAT
3.3/5V
VBB
VCC
INH
LIN
RxD
TxD
EN
7
8
6
3
1
4
2
LIN
WAKE
WAKE
5
GND
GND
GND
PD20070503.1
KL30
LIN−
BUS
KL31
Figure 2. Typical Application Diagram for a Master Node
Table 2. PIN DESCRIPTION
Pin
1
Name
RxD
EN
Description
Receive Data Output; Low in Dominant State; Open−Drain Output
2
Enable Input, Transceiver in Normal Operation Mode when High, Pulldown Resistor to GND
High Voltage Digital Input Pin to Apply Local Wakeup, Sensitive to Falling Edge, Pullup Current Source to V
3
WAKE
TxD
BB
4
Transmit Data Input, Low for Dominant State, Pulldown to GND (Switchable Strength for Wakeup Source Recognition)
5
GND
LIN
Ground
6
LIN Bus Output/Input
Battery Supply Input
7
V
BB
8
INH
Inhibit Output, Switch Between INH and V can be Used to Control External Regulator or Pullup Resistor on LIN Bus
BB
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
−0.3
−45
−35
−0.3
−0.3
−40
−4
Typ
Max
+45
+45
+45
Unit
V
V
BB
Voltage on Pin V
LIN Bus Voltage
BB
V
V
V
V
LIN
DC Voltage on WAKE Pin
DC Voltage on INH Pin
V
WAKE
INH
V
+ 0.3
V
BB
V_Dig_IO
DC Input Voltage on Pins (EN, RxD, TxD
Maximum Junction Temperature
HBM (All Pins) (Note 4)
+45
+150
+4
V
T
°C
kV
V
J
V
ESD
CDM (All Pins) (Note 5)
−750
+750
Version NCV7321D10:
HBM (LIN, INH, V , WAKE) (Note 6)
−5
−5
+5
+5
kV
kV
BB
System HBM (LIN, V , WAKE) (Note 7)
BB
Version NCV7321D11:
HBM (LIN, INH, V , WAKE) (Note 6)
−8
−7
−13
+8
+7
+13
kV
kV
kV
BB
System HBM (V , WAKE) (Note 8)
BB
System HBM (LIN) (Note 8)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
4. Equivalent to discharging a 100 pF capacitor through a 1.5 kꢁ resistor conform to MIL STD 883 method 3015.7.
5. Charged device model test according to ESD STM5.3.1−1999.
6. Equivalent to discharging a 100 pF capacitor through a 1.5 kꢁ resistor referenced to GND.
7. Equivalent to discharging a 150 pF capacitor through a 330 ꢁ resistor. 220 nF filter on LIN pin. System HBM levels are verified by an external
test−house.
8. Equivalent to discharging a 150 pF capacitor through a 330 ꢁ resistor. No filter on LIN pin. System HBM levels are verified by an external
test−house.
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NCV7321
FUNCTIONAL DESCRIPTION
Overall Functional Description
The junction temperature is monitored via a thermal
shutdown circuit that switches the LIN transmitter off when
temperature exceeds the TSD trigger level.
The NCV7321 has four operating states (unpowered
mode, standby mode, normal mode and sleep mode) that are
LIN is a serial communication protocol that efficiently
supports the control of mechatronic nodes in distributed
automotive applications. The domain is class−A multiplex
buses with a single master node and a set of slave nodes.
The NCV7321 contains the LIN transmitter, LIN receiver,
power−on−reset (POR) circuits and thermal shutdown
(TSD). The LIN transmitter is optimized for the maximum
specified transmission speed of 20 kB with EMC
performance due to reduced slew rate of the LIN output.
determined by the supply voltage V , input signals EN and
BB
WAKE and activity on the LIN bus.
OPERATING STATES
Standby mode
Normal mode
− LIN Transceiver: OFF
− LIN Term: 30 kꢁ
− INH Pin = High
− LIN Transceiver: ON
− LIN Term: 30 kꢁ
− INH Pin: High
EN = High for t > T_enable
− RxD: Low After a Wake−up/
Floating Otherwise
− TxD: Wake−up Source Flag
− RxD: Received LIN Data
− TxD: Weak Pulldown
Transmitter Input
LIN Wake−Up or Local Wake−Up
VBB Above Reset Level
EN = High for t > T_enable
EN = Low for t > T_disable
Sleep Mode
Unpowered
(VBB Below Reset Level)
− LIN Transceiver: OFF
− LIN Term: Floating
− INH Pin: Floating
− RxD: Floating
− LIN Transceiver: OFF
− LIN Term: Current Source
− INH Pin: Floating
− RxD: Floating
− TxD: Weak Pulldown
− TxD: Weak Pulldown
PD20080606.2
Figure 3. State Diagram
Unpowered Mode
high−impedant and the pulldown applied on pin TxD
remains weak.
As long as V remains below its power−on−reset level,
BB
the chip is kept in a safe unpowered state. LIN transmitter is
inactive, both LIN and INH pins are left floating and only a
weak pulldown is connected on pin TxD. Pin RxD remains
floating.
• After a wakeup event is recognized while the chip was
in the sleep mode. Pin RxD is pulled low while pin
TxD signals the type of wakeup leading to the standby
mode – its pullup remains weak for LIN wakeup and it
is switched to strong pulldown for the case of local
wakeup (i.e. wakeup via Pin WAKE).
The unpowered state will be entered from any other state
when V falls below its power−on−reset level.
BB
While in the standby mode, the configuration of Pins RxD
and TxD remains unchanged, regardless the activity on
WAKE and LIN Pins – i.e. if additional wakeups occur
during the standby mode, they have no influence on the chip
configuration.
Standby Mode
Standby mode is a low−power mode, where LIN
transceiver remains inactive while INH pin is driven high to
activate an external voltage regulator – see Figure 2.
Depending on the transition which led to the standby mode,
pins RxD and TxD are configured differently during this
mode. A 30 kꢁ resistor in series with a reverse−protection
Normal Mode
In normal mode, the full functionality of the LIN
transceiver is available. Data according the state of TxD
input are sent to the LIN bus while pin RxD reflects the
logical symbol received on the LIN bus – high−impedant for
recessive and Low for dominant. A 30 kꢁ resistor in series
diode is internally connected between LIN and V Pins.
BB
Standby mode is entered in one of the following ways:
• After the voltage level at V pin rises above its
BB
power−on−reset level. In this case, RxD Pin remains
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NCV7321
with a reverse−protection diode is internally connected
standby mode pin settings and the signals required to control
the chip in the normal mode (e.g. strong pull−down on TxD
after local wakeup vs. High logical level on TxD required to
send a recessive symbol on LIN).
between LIN and V pins.
BB
To avoid that, due to a failure of the application (e.g.
software error), the LIN bus is permanently driven dominant
and thus blocking all subsequent communication, signal on
pin TxD passes through a timer, which releases the bus in
case TxD remains low for longer than T_TxD_timeout. The
transmission can continue once the TxD returns to High
logical level.
In case the junction temperature increases above the
thermal shutdown threshold, e.g. due to a short of the LIN
wiring to the battery, the transmitter is disabled and releases
LIN bus to recessive. Once the junction temperature
decreases back below the thermal shutdown release level,
the transmission can be enabled again – however, to avoid
thermal oscillations, first a High logical level on TxD must
be encountered before the transmitter is enabled.
Sleep Mode
Sleep mode provides extremely low current consumption.
The LIN transceiver is inactive and the battery consumption
is minimized. Pin INH is put to high−impedant state to
disable the external regulator and, in case of a master node,
the LIN termination – see Figure 2. Only a weak pullup
current source is internally connected between LIN and
V
BB
Pins, in order to minimize current consumption even in
case of LIN short to GND.
Sleep mode can be entered from normal mode by
assigning Low logical level to pin EN for longer than
T_disable. The sleepmode can be entered even if a
permanent short occurs either on LIN or WAKE Pin.
If a wakeup event occurs during the transition between
normal and sleep mode (during the T_disable filtering time),
it will be regarded as valid wakeup and the chip will enter
standby mode with the appropriate setting of Pins RxD and
TxD.
As required by SAE J2602, the transceiver must behave
safely below its operating range – it shall either continue to
transmit correctly (according its specification) or remain
silent (transmit a recessive state regardless of the TxD
signal). A battery monitoring circuit in NCV7321
de−activates the transmitter in the normal mode if the V
BB
level drops below MONL_V . Transmission is enabled
BB
Wake−up
again when V reaches MONH_V . The internal logic
BB
BB
Two types of wakeup events are recognized by NCV7321:
• Local wakeup – when a high−to−low transition on pin
WAKE is encountered and WAKE pin remains Low at
least during T_WAKE – see Figure 4.
• Remote (or LIN) wakeup – when LIN bus is externally
driven dominant during longer than T_LIN_wake and a
rising edge on LIN occurs afterwards – see Figure 5.
remains in the normal mode and the reception from the LIN
line is still possible even if the battery monitor disables the
transmission. Although the specifications of the monitoring
and power−on−reset levels are overlapping, it’s ensured by
the implementation that the monitoring level never falls
below the power−on−reset level.
Normal mode can be entered from either standby or sleep
mode when EN Pin is High for longer than T_enable. When
the transition is made from standby mode, TxD pulldown is
set to weak and RxD is put high−impedant immediately after
EN becomes High (before the expiration of T_enable
filtering time). This excludes signal conflicts between the
Wakeup events can be exclusively detected in sleep mode or
during the transition from normal mode to sleep mode. Due
to timing tolerances, valid wakeup events beginning shortly
before normal−to−sleep mode transition can be also
sometimes regarded as valid wakeups.
Local wakeup recognized
WAKE
VBB
T_WAKE
V_WAKE_th
t
Sleep Mode
Stand−by Mode
PD20070503.4
Figure 4. Local Wakeup Detection
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NCV7321
Detection of Remote Wake−Up
60% Vbb
LIN
VBB
LIN recessive level
T_LIN_wake
Sleep Mode
40% VBB
LIN dominant level
t
Stand−by Mode
PD20070504.2
Figure 5. Remote (LIN) Wakeup Detection
ELECTRICAL CHARACTERISTICS
Definitions
All voltages are referenced to GND (Pin 5). Positive currents flow into the IC.
Table 4. DC CHARACTERISTICS (V = 5 V to 27 V; T = −40°C to +150°C; unless otherwise specified. Typical values are given
BB
J
at V(V ) = 12 V and T = 25°C, unless specified otherwise.)
BB
J
DC CHARACTERISTICS − SUPPLY
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
BB
I
BB
I
BB
I
BB
I
BB
I
BB
I
BB
_ON_rec
_ON_dom
_STB
V
BB
V
BB
V
BB
V
BB
V
BB
V
BB
Consumption
Consumption
Consumption
Consumption
Consumption
Consumption
Normal Mode; LIN recessive
1.6
8
mA
mA
ꢀ A
ꢀ A
ꢀ A
ꢀ A
V
= V(V ) = V
= V
LIN
BB
INH WAKE
Normal Mode; LIN dominant
V(V ) = V = V
BB
INH
WAKE
Standby Mode
= V(V ) = V
350
30
20
10
V
LIN
= V
BB
INH
INH
WAKE
WAKE
WAKE
_SLP
Sleep Mode
= V(V ) = V
V
LIN
= V
BB
_SLP_18V
_SLP_12V
Sleep Mode, V < 18 V
BB
V
LIN
= V(V ) = V
= V
BB
INH
Sleep Mode, V = 12 V, T < 85°C
BB
J
V
LIN
= V(V ) = V
= V
BB
INH
WAKE
LIN TRANSMITTER
VLIN_dom_LoSu
p
LIN Dominant Output
Voltage
TXD = Low; V = 7.3 V
1.2
2.0
V
V
BB
VLIN_dom_HiSup
LIN Dominant Output
Voltage
TXD = Low; V = 18 V
BB
VLIN_REC
LIN Recessive Output
Voltage
TXD = HighH; I
= 0 mA
V
− Vꢂ
V
LIN
BB
(Note 9)
ILIN_lim
Short Circuit Current
Limitation
V
= V _max
40
200
47
mA
kꢁ
mA
ꢀ A
LIN
BB
R
Internal Pullup
Resistance
20
−1
33
slave
ILIN_off_dom
LIN output current, bus
in dominant state
Normal Mode, Driver Off;
= 12 V
V
BB
ILIN_off_dom_slp
LIN Output Current,
Bus in Dominant State
Sleep Mode, Driver Off; V = 12 V
−20
−15
−2
BB
9. Vꢂ is the forward diode voltage. Typically (over the complete temperature) Vꢂ = 1 V.
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NCV7321
Table 4. DC CHARACTERISTICS (V = 5 V to 27 V; T = −40°C to +150°C; unless otherwise specified. Typical values are given
BB
J
at V(V ) = 12 V and T = 25°C, unless specified otherwise.)
BB
J
DC CHARACTERISTICS − SUPPLY
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
LIN TRANSMITTER
ILIN_off_rec
LIN Output Current,
Driver Off;
BB
1
1
5
ꢀ A
mA
ꢀ A
Bus in Recessive State
V
< 18 V; V < V
< 18 V
BB
LIN
ILIN_no_GND
Communication not
Affected
V
BB
= GND = 12 V; 0 < V
< 18 V
−1
LIN
ILIN_no_V
LIN Bus Remains
Operational
V
BB
= GND = 0 V; 0 < V
< 18 V
BB
LIN
LIN RECEIVER
Vbus_dom
Bus Voltage for
Dominant State
0.4
V
V
BB
Vbus_rec
Bus Voltage for
Recessive State
0.6
BB
Vrec_dom
Vrec_rec
Vrec_cnt
Receiver Threshold
Receiver Threshold
LIN Bus Recessive − Dominant
LIN Bus Dominant − Recessive
(Vbus_dom + Vbus_rec)/2
0.4
0.4
0.6
0.6
V
BB
V
BB
V
BB
Receiver Centre
Voltage
0.475
0.525
Vrec_hys
Receiver Hysteresis
(Vbus_rec − Vbus_dom)
0.05
0.175
V
BB
DC CHARACTERISTICS − I/Os
Symbol
PIN EN
Parameter
Conditions
Min
Typ
Max
Unit
Vil_EN
Low Level Input
Voltage
−0.3
2.0
0.8
5.5
650
V
V
Vih_EN
Rpd_EN
High Level Input
Voltage
Pulldown Resistance to
Ground (Note 9)
150
350
kꢁ
PIN INH
Delta_VH
High Level Voltage
Drop
I
= 15 mA, INH Active
0.05
0.35
0
0.75
1
V
INH
I_leak
Leakage Current
Sleep Mode; V
= 0 V
−1
ꢀ
A
INH
PIN RxD
Iol_RxD
Low Level Output
Current
V = 0.4 V, normal mode,
RxD
V = 0 V
LIN
1.5
mA
Ioh_RxD
High Level Output
Current
V
RxD
V
LIN
= 5 V, Normal Mode,
−5
0
5
ꢀ
A
= V(V
)
BB
PINS TxD
Vil_TxD
Low Level Input
Voltage
−0.3
2.0
0.8
5.5
650
V
V
Vih_TxD
High Level Input
Voltage
Rpd_TxD
Pulldown Resistor on
TxD Pin,
Corresponding to
“Weak Pulldown”
Normal Mode or Sleep Mode or
Standby Mode after Powerup or
Standby Mode after LIN Wakeup
150
350
kꢁ
9. Vꢂ is the forward diode voltage. Typically (over the complete temperature) Vꢂ = 1 V.
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NCV7321
Table 4. DC CHARACTERISTICS (V = 5 V to 27 V; T = −40°C to +150°C; unless otherwise specified. Typical values are given
BB
J
at V(V ) = 12 V and T = 25°C, unless specified otherwise.)
BB
J
DC CHARACTERISTICS − I/Os
Symbol
PINS TxD
Parameter
Conditions
Min
Typ
Max
Unit
Ipd_RxD_Strong
Pulldown Current on
TxD Pin Corresponding
to “Strong Pulldown”
Standby Mode after Local Wakeup
1.5
mA
PIN WAKE
V_wake_th
WAKE Threshold
Voltage
V
BB
− 3.3
V
BB
− 1.1
V
I_wake_pullup
Pullup Current on Pin
WAKE
V
V
= 0 V
= V(V
−30
−5
−15
−1
ꢀ A
ꢀ A
WAKE
I_wake_leak
Leakage of Pin WAKE
)
0
5
WAKE
BB
DC CHARACTERISTICS – POWER−ON−RESET, BATTERY MONITORING AND THERMAL SHUTDOWN
Symbol
POR AND V MONITOR
Parameter
Conditions
Min.
Typ.
Max.
Unit
BB
PORH_V
Power−on Reset High
Level on V
V
V
V
V
Rising
Falling
Rising
Falling
2
4.5
4
V
V
V
V
BB
BB
BB
BB
BB
BB
PORL_V
Power−on Reset Low
Level on V
1.7
BB
BB
MONH_V
Battery Monitoring
High Level
4.5
BB
MONL_V
Battery Monitoring Low
Level
3
9
BB
TSD
T
J
Junction Temperature
Temperature Rising
165
°C
°C
T _hyst
J
Thermal Shutdown
Hysteresis
18
9. Vꢂ is the forward diode voltage. Typically (over the complete temperature) Vꢂ = 1 V.
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NCV7321
Table 5. AC CHARACTERISTICS V = 5 V to 27 V; T = −40°C to +150°C; unless otherwise specified. For the transmitter
BB
J
parameters, the following bus loads are considered: L1 = 1 kꢁ / 1 nF; L2 = 660 ꢁ / 6.8 nF; L3 = 500 ꢁ / 10 nF
Symbol
LIN TRANSMITTER
D1
Parameter
Conditions
Min
Typ
Max
Unit
Duty Cycle 1 =
TH
TH
BIT
= 0.744 x V
0.396
0.5
REC(min)
= 0.581 x V
DOM(min)
BB
BB
t
T
) / (2 x
BUS_REC(max
)
T
= 50 ꢀ s
Bit
V(V ) = 7 V to 18 V
BB
D2
D3
D4
Duty Cycle 2 =
) / (2 x
Bit
TH
TH
BIT
= 0.422 x V
0.5
0.417
0.5
0.581
0.5
REC(max)
DOM(max)
BB
BB
t
= 0.284 x V
BUS_REC(min
T
)
T
= 50 ꢀ s
V(V ) = 7.6 V to 18 V
BB
Duty Cycle 3 =
) / (2 x
TH
TH
BIT
= 0.778 x V
BB
REC(min)
DOM(min)
t
= 0.616 x V
BUS_REC(max
Bit
BB
T
)
T
= 96 ꢀ s
V(V ) = 7 V to 18 V
BB
Duty Cycle 4 =
) / (2 x
TH
TH
BIT
= 0.389 x V
0.590
REC(max)
DOM(max)
BB
t
= 0.251 x V
BUS_REC(min
Bit
BB
T
)
T
= 96 ꢀ s
V(V ) = 7.6 V to 18 V
BB
T_fall
LIN Falling Edge
LIN Rising Edge
LIN Slope Symmetry
Normal Mode; V = 12 V
22.5
22.5
4
ꢀ s
ꢀ s
ꢀ s
BB
T_rise
Normal Mode; V = 12 V
BB
T_sym
Normal Mode; V = 12 V
−4
0
BB
LIN Receiver
Trec_prop_down
Propagation Delay of
Receiver Falling Edge
0.1
0.1
−2
6
6
2
ꢀ s
ꢀ s
ꢀ s
Trec_prop_up
Trec_sym
Propagation Delay of
Receiver Rising Edge
Propagation Delay
Symmetry
Trec_prop_down − Trec_prop_up
MODE TRANSITIONS AND TIMEOUTS
T_LIN_wake
Duration of LIN
Dominant for Detection
of wake−up via LIN bus
Sleep Mode
Sleep Mode
30
7
90
150
50
ꢀ s
ꢀ s
T_WAKE
Duration of Low level
on WAKE Pin for local
wakeup detection
T_enable
Duration of High Level
on EN Pin for
Transition to Normal
Mode
Version NCV7321D10
Version NCV7321D11
Version NCV7321D10
Version NCV7321D11
2
2
5
10
18.5
10
ꢀ s
ꢀ s
ꢀ s
ꢀ s
ms
7.5
5
T_disable
Duration of Low Level
on EN Pin for
Transition to Sleep
Mode
2
2
7.5
18.5
50
T_TxD_timeout
TxD Dominant
Time−Out
Normal Mode, TxD = low,
Guarantees Baudrate as Low as
1 kbps
15
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9
NCV7321
TxD
LIN
tBIT
tBIT
50%
t
tBUS_dom(max)
tBUS_rec(min)
THRec(max)
THDom(max)
Thresholds of
receiving node 1
THRec(min)
THDom(min)
Thresholds of
receiving node 2
t
tBUS_dom(min)
tBUS_rec(max)
PC20080606.3
Figure 6. LIN Transmitter Duty Cycle
LIN
100%
60%
40%
60%
40%
0%
t
T_fall
T_rise
PC20060428.1
Figure 7. LIN Transmitter Rising and Falling Times
LIN
VBB
60% VBB
40% VBB
t
trec_prop_down
trec_prop_up
RxD
50%
PC20060428.3
t
Figure 8. LIN Receiver Timing
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10
NCV7321
DEVICE ORDERING INFORMATION
†
Part Number
NCV7321D10G
NCV7321D10R2G
NCV7321D11G
Description
Temperature Range
Package Type
Shipping
Stand−alone LIN
Transceiver
96 Tube / Tray
3000 / Tape & Reel
96 Tube / Tray
SOIC−8
(Pb−Free)
−40°C − 125°C
Improved Stand−alone LIN
Transceiver
NCV7321D11R2G
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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11
NCV7321
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
−X−
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
MILLIMETERS
DIM MIN MAX
INCHES
G
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
1.27 BSC
0.050 BSC
−Z−
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
0.10 (0.004)
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
SOLDERING FOOTPRINT*
1.52
0.060
7.0
4.0
0.275
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NCV7321/D
相关型号：
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