NCV7327MW0R2G [ONSEMI]

LIN Transceiver, Stand-alone;


型号：	NCV7327MW0R2G
厂家：	ONSEMI
描述：	LIN Transceiver, Stand-alone
文件：	总12页 (文件大小：183K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NCV7327

LIN Transceiver,

Stand-alone

Description

The NCV7327 is a fully featured local interconnect network (LIN)

transceiver designed to interface between a LIN protocol controller

and the physical bus.

www.onsemi.com

The LIN bus is designed to communicate low rate data from control

devices such as door locks, mirrors, car seats, and sunroofs at the

lowest possible cost. The bus is designed to eliminate as much wiring

as possible and is implemented using a single wire in each node. Each

node has a slave MCU−state machine that recognizes and translates

the instructions specific to that function.

MARKING

DIAGRAMS

SOIC−8

CASE 751AZ

NV7327−0

ALYW

The main attraction of the LIN bus is that all the functions are not

time critical and usually relate to passenger comfort.

Features

• LIN−Bus Transceiver

NV73

27−0

ALYWG

DFNW8

CASE 507AB

♦ Compliant to ISO 17987−4 (Backwards Compatible to LIN

Specification rev. 2.x, 1.3) and SAE J2602

♦ Bus Voltage $42 V

♦ Transmission Rate up to 20 kbps (No low limit due to absence of

TxD Timeout function)

= Assembly Location

= Wafer Lot

= Year

♦ Integrated Slope Control

= Work Week

= Pb−Free Package

• Protection

♦ Thermal Shutdown

(Note: Microdot may be in either location)

♦ Undervoltage Protection

♦ Bus Pins Protected Against Transients in an Automotive

Environment

PIN CONNECTIONS

• Modes

RxD

♦ Normal Mode: LIN Transceiver Enabled, Communication via the

Bus is Possible

LIN

♦ Sleep Mode: LIN Transceiver Disabled, the Consumption from

TxD

GND

is Minimized

SOIC−8 (Top View)

♦ Standby Mode: Transition Mode Reached after Wake−up Event on

the LIN Bus

• Compatibility

RxD

8 NC

♦ Pin−Compatible Subset with NCV7321

♦ K−line Compatible

LIN

♦ NCV7327 differs from NCV7329 only by absence of TxD

Timeout function

TxD

GND

DFNW8 (Top View)

Quality

• Wettable Flank Package for Enhanced Optical Inspection

• AEC−Q100 Qualified and PPAP Capable

ORDERING INFORMATION

See detailed ordering and shipping information on page 10 of

this data sheet.

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Publication Order Number:

March, 2019 − Rev. 0

NCV7327/D

NCV7327

BLOCK DIAGRAM

POR

sleep

State

Thermal

shutdown

Control

Osc

SLAVE

RxD

TxD

COMP

−

Filter

LIN

Slope Control

NCV7327

GND

Figure 1. Block Diagram

TYPICAL APPLICATION

Slave Node

Master Node

bat

VBAT

3.3/5V

V_BB

VCC

RxD

TxD

RxD

TxD

LIN

GND

LB20140619.0

KL30

LIN−BUS

KL31

Figure 2. Typical Application Diagram for a Master Node

Table 1. PIN DESCRIPTION

Name

RxD

Description

Receive Data Output; Low in Dominant State; Open−Drain Output

Enable Input, Transceiver in Normal Operation Mode when High, Pull−down Resistor to GND

Not Connected

TxD

GND

LIN

Transmit Data Input, Low for Dominant State, Pull−down to GND

Ground

LIN Bus Output/Input

Battery Supply Input

Not Connected

−

Exposed Pad. Recommended to connect to GND or left floating in application (DFNW8 package only).

www.onsemi.com

NCV7327

Table 2. ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Min

−0.3

−42

−0.3

−8

Max

+42

Unit

Voltage on Pin V

LIN

LIN Bus Voltage with respect to GND

LIN Bus Voltage with respect to V

V_Dig_IO

DC Input Voltage on Pins (EN, RxD, TxD)

Human Body Model (LIN Pin) (Note 1)

Human Body Model (All pins) (Note 1)

Charged Device Model (All Pins) (Note 2)

Machine Model (All Pins) (Note 3)

ESD

−4

−750

−200

−8

+750

+200

Electrostatic Discharge Voltage (LIN Pin) System Human Body

Model (Note 4) Conform to IEC 61000−4−2

ESDIEC

Junction Temperature Range

−40

−55

+150

°C

−

Storage Temperature Range

STG

MSL

Moisture sensitivity level for SOIC−8

Moisture sensitivity level for DFNW8

SOIC

MSL

−

DFN

SLD

Lead Temperature Soldering Reflow (SMD Styles Only),

Pb−Free Versions (Note 5)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Standardized human body model electrostatic discharge (ESD) pulses in accordance to EIA−JESD22. Equivalent to discharging a 100 pF

capacitor through a 1.5 kW resistor.

2. Standardized charged device model ESD pulses when tested according to AEC−Q100−011.

3. In accordance to JEDEC JESD22−A115. Equivalent to discharging a 200 pF capacitor through a 10 W resistor and 0.75 mH coil.

4. Equivalent to discharging a 150 pF capacitor through a 330 W resistor. System HBM levels are verified by an external test−house.

5. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D

Table 3. THERMAL CHARACTERISTICS

Parameter

Symbol

Value

Unit

Thermal characteristics, SOIC−8 (Note 6)

Thermal Resistance Junction−to−Air, Free air, 1S0P PCB (Note 7)

Thermal Resistance Junction−to−Air, Free air, 2S2P PCB (Note 8)

131

°C/W

Thermal characteristics, DFNW8 (Note 6)

Thermal Resistance Junction−to−Air, Free air, 1S0P PCB (Note 7)

Thermal Resistance Junction−to−Air, Free air, 2S2P PCB (Note 8)

125

°C/W

6. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe

Operating parameters.

7. Values based on test board according to EIA/JEDEC Standard JESD51−3, signal layer with 10% trace coverage.

8. Values based on test board according to EIA/JEDEC Standard JESD51−7, signal layers with 10% trace coverage.

www.onsemi.com

NCV7327

ELECTRICAL CHARACTERISTICS

Definitions

All voltages are referenced to GND (pin 5) unless otherwise specified. Positive currents flow into the IC. Sinking current means

the current is flowing into the pin; sourcing current means the current is flowing out of the pin.

Table 4. DC CHARACTERISTICS (V = 5 V to 18 V; T = −40°C to +150°C; Bus Load = 500 W (V to LIN); unless otherwise

specified. Typical values are given at V = 12 V and T = 25°C, unless otherwise specified.)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

SUPPY PIN (V

)

Battery Supply Voltage

Battery Supply Current

5.0

0.2

2.0

−

1.2

6.5

Normal Mode; LIN Recessive

Normal Mode; LIN Dominant

Sleep and Standby Mode;

0.55

3.9

6.0

= V

LIN Recessive; LIN

BB; T <85°C

Battery Supply Current

Sleep and Standby Mode;

−

6.0

= V

LIN Recessive; LIN

POR AND V MONITOR

PORH_V

Power−on Reset; High Level on V

Rising

Falling

Rising

Falling

2.7

1.3

3.2

3.0

3.5

2.1

4.2

4.0

4.4

2.7

5.0

4.8

PORL_V

Power−on Reset; Low Level on V

Battery Monitoring High Level

Battery Monitoring Low Level

MONH_V

MONL_V

TRANSMITTER DATA INPUT (PIN TxD)

Low Level Input Voltage

−0.3

2.0

−

+0.8

7.0

IL_TxD

IH_TxD

PD_TxD

High Level Input Voltage

Pull−down Resistor on TxD Pin

125

325

RECEIVER DATA OUTPUT (PIN RxD)

Low Level Output Current

High Level Output Current

RxD

= 0.4 V

2.0

−

OL_RxD

OH_RxD

−5

ENABLE INPUT (PIN EN)

Low Level Input Voltage

High Level Input Voltage

Pull−down Resistor to Ground

−0.3

2.0

−

+0.8

7.0

IL_EN

IH_EN

PD_EN

100

250

650

LIN BUS LINE (PIN LIN)

Bus Voltage for Dominant State

Bus Voltage for Recessive State

Receiver Threshold

−

0.6

0.4

0.475

0.050

−

0.4

−

BUS_DOM

−

BUS_REC

REC_DOM

LIN Bus Recessive − Dominant

−

0.6

Receiver Threshold

LIN Bus Dominant – Recessive

−

0.6

REC_REC

REC_CNT

REC_HYS

Receiver Centre Voltage

Receiver Hysteresis

+ V

) / 2

)

0.500

0.525

0.175

1.2

REC_DOM

REC_REC

− V

−

REC_DOM

Dominant Output Voltage

Normal mode; V = 7 V

LIN_DOM

Normal mode; V = 18 V

−

2.0

Communication not Affected

LIN Bus Remains Operational

Current Limitation for Driver

= GND = 12 V; 0 < V < 18 V

−1.0

−

+1.0

5.0

BUS no_GND

LIN

= GND = 0 V; 0 < V < 18 V

LIN

BUS no_VBB

Dominant State; V

= V

BB_MAX

200

−

BUS_LIM

BUS_PAS_dom

LIN

Receiver Leakage Current; Driver OFF

TxD = High; V

= 0 V; V = 12 V

−1.0

LIN

www.onsemi.com

NCV7327

Table 4. DC CHARACTERISTICS (V = 5 V to 18 V; T = −40°C to +150°C; Bus Load = 500 W (V to LIN); unless otherwise

specified. Typical values are given at V = 12 V and T = 25°C, unless otherwise specified.)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

LIN BUS LINE (PIN LIN)

Receiver Leakage Current;

see Figure 1

Sleep Mode; V

= 0 V; V = 12 V

−16

−8.0

−3.0

sleep

LIN

Receiver Leakage Current; Driver

OFF; (Note 9)

TxD = High; 8 V < V < 18 V;

−

BUS_PAS_rec

8 V < V < 18 V; V ≥ V

LIN

Voltage Drop on Serial Diode

Internal Pull−up Resistance

Capacitance on Pin LIN, (Note 9)

Voltage drop on D see Figure 1

0.4

−

0.7

1.0

SEDiode

See Figure 1

SLAVE

LIN

THERMAL SHUTDOWN

Shutdown Junction Temperature

J(sd)

Temperature Rising

160

180

200

°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

9. Values based on design and characterization. Not tested in production.

www.onsemi.com

NCV7327

Table 5. AC CHARACTERISTICS (V = 5 V to 18 V; T = −40°C to +150°C; unless otherwise specified. For the transmitter

parameters, the following bus loads are considered: L1 = 1 kW / 1 nF; L2 = 660 W / 6.8 nF; L3 = 500 W / 10 nF)

Symbol

LIN TRANSMITTER

Parameter

Conditions

Min

Typ

Max

Unit

Duty Cycle 1 = t

/ (2xt

)

= 0.744 x V

0.396

−

0.500

−

BUS_REC(min)

BUS_REC(max)

BUS_REC(min)

BUS_REC(max)

BIT

REC(max)

DOM(max)

= 0.581 x V

= 50 ms

BIT

= 5 V to 18 V

Duty Cycle 2 = t

Duty Cycle 3 = t

Duty Cycle 4 = t

)

= 0.422 x V

0.500

0.417

0.500

−

0.581

0.500

0.590

−

BIT

REC(min)

DOM(min)

= 0.284 x V

= 50 ms

BIT

= 5 V to 18 V

)

= 0.778 x V

REC(max)

DOM(max)

= 0.616 x V

= 96 ms

BIT

= 5 V to 18 V

)

= 0.389 x V

BIT

REC(min)

DOM(min)

= 0.251 x V

= 96 ms

BIT

= 5 V to 18 V

Propagation Delay of TxD to LIN. TxD

High to Low

−

TX_PROP_DOWN

Propagation Delay of TxD to LIN. TxD

Low to High

TX_PROP_UP

LIN RECEIVER

Propagation Delay of Receiver, Rising

and Falling Edge (See Figure 5)

= 2.4 kW; C

= 20 pF

= 20 pF;

0.1

−

6.0

RX_PD

RxD

Propagation Delay Symmetry

−2.0

+2.0

RX_SYM

RxD

Rising Edge with Respect to

Falling Edge

MODE TRANSITIONS AND TIMEOUTS

Duration of LIN Dominant for Detection

Sleep Mode

150

LIN_WAKE

of Wake−up via LIN Bus (See Figure 6)

Time from Rising Edge of EN pin to the

moment when the Transmitter is able to

correctly transmit

INIT_NORM

Duration of EN pin in High Level State

for transition to Normal Mode

−

ENABLE

Duration of EN pin in Low Level State

for transition to Sleep Mode

DISABLE

Delay from LIN Bus Dominant to

Recessive Edge to Entering of Standby

Mode after Valid LIN Wake−up

Sleep Mode

TO_STB

10.Values based on design and characterization. Not tested in production.

www.onsemi.com

NCV7327

FUNCTIONAL DESCRIPTION

Overall Functional Description

level, the transmission can be enabled again. However, to

avoid thermal oscillations, first a High logical level on TxD

must be encountered before the transmitter is enabled.

As required by SAE J2602, the transceiver must behave

safely below its operating range – it shall either continue to

transmit correctly (according its specification) or remain

silent (transmit a recessive state regardless of the TxD

signal). A battery monitoring circuit in NCV7327

LIN is a serial communication protocol that efficiently

supports the control of mechatronic nodes in distributed

automotive applications.

The NCV7327 contains the LIN transmitter, LIN receiver,

power−on−reset (POR) circuits and thermal shutdown

(TSD). The LIN transmitter is optimized for a maximum

specified transmission speed of 20 kbps.

deactivates the transmitter in the Normal mode if the V

level drops below MONL_V . Transmission is enabled

Table 6. OPERATING MODES

again when V reaches MONH_V . The internal logic

Pin EN

Mode

Unpowered

Sleep

Pin RxD

Floating

LIN bus

remains in the Normal mode and the reception from the LIN

line is still possible even if the battery monitor disables the

transmission. Although the specifications of the monitoring

and power−on−reset levels are overlapping, it’s ensured by

the implementation that the monitoring level never falls

below the power−on−reset level.

OFF; Floating

OFF; 30 kW

Low

Floating

Standby

Low indicates

wake−up

High

Normal

LOW: dominant

HIGH: recessive

ON; 30 kW

The Normal mode can be entered from either Standby or

Sleep mode when EN Pin is High for longer than t

ENABLE

When the transition is made from Standby mode, TxD

pull−down is set to weak and RxD is put into

a high−impedance immediately after EN becomes High

Unpowered Mode

As long as V remains below its power−on−reset level,

the chip is kept in a safe unpowered state. The LIN

transmitter is inactive, the LIN pin is left floating and only

a weak pull−down is connected on pin TxD. Pin RxD

remains floating.

(before the expiration of t

filtering time). This

ENABLE

excludes signal conflicts between the Standby mode pin

settings and the signals required to control the chip in the

Normal mode after a local wake−up vs. High logical level on

TxD required to send a recessive symbol to the LIN bus.

The unpowered state will be entered from any other state

when

falls below its power−on−reset level

(PORL_V ). When V rises above the power−on−reset

Sleep Mode

high threshold (PORH_V ), the NCV7327 switches to

Sleep mode provides extremely low current consumption.

The LIN transceiver is inactive and the battery consumption

is minimized.

a Sleep mode.

Normal Mode

This mode is entered in one of the following ways:

In the Normal mode, the full functionality of the LIN

transceiver is available. The transceiver can transmit and

receive data via the LIN bus with speed up to 20 kbps. Data

according the state of TxD input are sent to the LIN bus

while pin RxD reflects the logical symbol received on the

LIN bus − high−impedant for recessive and Low for dominant.

A 30 kW resistor in series with a reverse−protection diode is

• After the voltage level at V pin rises above its

power−on−reset level (PORH_V ). In this case, RxD

Pin remains high−impedant and the pull−down applied

on pin TxD remains weak.

• After assigning Low logical level to pin EN for longer

than t

while NCV7327 is in the Normal mode.

DISABLE

internally connected between LIN and V pins.

Standby Mode

In case the junction temperature increases above the

Standby mode is entered from the Sleep mode when

a remote wake−up event occurred. The Low level on RxD

pin indicates interrupt flag for the microcontroller.

thermal shutdown threshold (T

), e.g. due to a short of the

J(sd)

LIN wiring to the battery, the transmitter is disabled and

releases the LIN bus to recessive. Once the junction

temperature decreases back below the thermal shutdown

www.onsemi.com

NCV7327

OPERATING STATES

Below Reset Level

Unpowered

(V Below Reset Level)

− LIN Transceiver: OFF

− LIN Term: Floating

− RxD: Floating

Above Reset Level

Sleep Mode

− LIN Transceiver: OFF

− LIN Term: Current Source

− RxD: Floating

EN = High for t > t

ENABLE

LIN rising edge after LIN = 0 for t > t

LIN_WAKE

EN = Low for t > t

DISABLE

Standby Mode

Normal Mode

EN = High for t > t

ENABLE

− LIN Transceiver: OFF

− LIN Term: 30 kW pull−up

− RxD: Low

− LIN Transceiver: ON

− LIN Term: 30 kW pull−up

− RxD Receives LIN Data

Figure 3. State Diagram

www.onsemi.com

NCV7327

MEASUREMENT SETUPS AND DEFINITIONS

TxD

LIN

BIT

50%

BUS_REC(min)

BUS_DOM(max)

TH_REC(max)

TH_DOM(max)

Thresholds of

receiving node 1

TH_REC(min)

TH_DOM(min)

Thresholds of

receiving node 2

BUS_REC(max)

BUS_DOM(min)

Figure 4. LIN Transmitter Duty Cycle

LIN

60% V

40% V

RX_PD

RxD

RX_PD

50%

Figure 5. LIN Receiver Timing

LIN

Detection of Remote Wake−Up

LIN recessive level

LIN_WAKE

60% V

40% V

LIN dominant level

Sleep Mode

Standby Mode

Figure 6. Remote (LIN) Wake−up Detection

www.onsemi.com

NCV7327

DEVICE ORDERING INFORMATION

†

Part Number

Description

Temperature Range

Package

Shipping

NCV7327D10R2G

LIN Transceiver, Stand−alone

−40°C to +150°C

SOIC−8

3000 / Tape & Reel

(Pb−Free)

NCV7327MW0R2G

LIN Transceiver, Stand−alone

−40°C to +150°C

DFNW8

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

www.onsemi.com

NCV7327

PACKAGE DIMENSIONS

SOIC−8

CASE 751AZ

ISSUE B

NOTES 4&5

0.10 C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.

ALLOWABLE PROTRUSION SHALL BE 0.004 mm IN EXCESS OF

MAXIMUM MATERIAL CONDITION.

455CHAMFER

NOTE 6

4. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS

OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS

SHALL NOT EXCEED 0.006 mm PER SIDE. DIMENSION E1 DOES

NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD

FLASH OR PROTRUSION SHALL NOT EXCEED 0.010 mm PER SIDE.

5. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOT

TOM. DIMENSIONS D AND E1 ARE DETERMINED AT THE OUTER

MOST EXTREMES OF THE PLASTIC BODY AT DATUM H.

6. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM H.

7. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD

BETWEEN 0.10 TO 0.25 FROM THE LEAD TIP.

0.10 C D

NOTES 4&5

SEATING

PLANE

DETAIL A

0.20 C D

8X b

8. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING

PLANE TO THE LOWEST POINT ON THE PACKAGE BODY.

0.25

C A-B

NOTE 6

MILLIMETERS

TOP VIEW

NOTES 3&7

DIM MIN

MAX

1.75

0.25

---

DETAIL A

---

0.10

1.25

0.31

0.10

^NOc^{TE 7}

0.10 C

0.51

0.25

4.90 BSC

6.00 BSC

3.90 BSC

1.27 BSC

END VIEW

SEATING

PLANE

SIDE VIEW

NOTE 8

0.25

0.40

0.41

1.27

RECOMMENDED

0.25 BSC

SOLDERING FOOTPRINT*

0.76

1.52

7.00

1.27

PITCH

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

www.onsemi.com

NCV7327

PACKAGE DIMENSIONS

DFNW8 3x3, 0.65P

CASE 507AB

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL

AND IS MEASURED BETWEEN 0.10 AND

0.20mm FROM THE TERMINAL TIP.

4. COPLANARITY APPLIES TO THE EXPOSED

PAD AS WELL AS THE TERMINALS.

5. THIS DEVICE CONTAINS WETTABLE FLANK

DESIGN FEATURES TO AID IN FILLET FORMA-

TION ON THE LEADS DURING MOUNTING.

ALTERNATE

CONSTRUCTION

DETAIL A

PIN ONE

REFERENCE

EXPOSED

COPPER

MILLIMETERS

DIM MIN

NOM

0.85

−−−

0.20 REF

−−−

0.30

3.00

2.40

3.00

1.60

MAX

0.90

0.05

0.80

−−−

TOP VIEW

0.10

0.25

2.95

2.30

2.95

1.50

−−−

0.35

3.05

2.50

3.05

1.70

PLATING

DETAIL B

0.05

DETAIL B

0.65 BSC

0.30 REF

0.40

0.35

0.00

0.45

0.10

SEATING

PLANE

NOTE 4

SIDE VIEW

0.05

PLATED

SURFACES

DETAIL A

SECTION C−C

RECOMMENDED

SOLDERING FOOTPRINT*

2.55

2.28

0.75

8X b

3.30 1.76

e/2

0.10

0.05

A B

PACKAGE

OUTLINE

NOTE 3

BOTTOM VIEW

0.65

PITCH

0.33

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

NCV7327/D

◊

www.onsemi.com

NCV7327MW0R2G [ONSEMI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E