NCV8537MN500R2G [ONSEMI]
High Accuracy Low Dropout Linear Regulator;型号: | NCV8537MN500R2G |
厂家: | ONSEMI |
描述: | High Accuracy Low Dropout Linear Regulator 光电二极管 输出元件 调节器 |
文件: | 总16页 (文件大小:1288K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NCV8537
500 mA High Accuracy Low
Dropout Linear Regulator,
with Power Good Function
The NCV8537 is a high performance low dropout linear voltage
regulator. Based on the popular NCV8535, the device retains all the
best features of its predecessor which includes high accuracy,
excellent stability, low noise performance and reverse bias protection
but now includes a Power Good output signal to enable monitoring of
the supply system. The device is available with fixed or adjustable
outputs and is packaged in a 10 pin 3x3 mm DFN package.
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DFN10
MN SUFFIX
CASE 485C
Features
• High Accuracy Output Over Line and Load Variances ( 0.9% at
25°C)
PIN CONFIGURATION
• Operating Temperature Range: −40°C to 125°C
Pin 1, 2. V
out
• Power Good Output to Indicate the Regulator is Within Specified
3. Sense / ADJ
4. GND
5. PWRG
6. NC
Limits
• Stable Output with Low Value Capacitors of any type and with no
Minimum Load Current Requirement
7. NR
• Incorporates Current Limiting and Reverse Bias Protection
8. SD
9, 10. V
in
• Thermal Shutdown Protection
EP, GND
• Low Dropout Voltage at Full Load (340 mV typ at V = 3.3 V)
o
• Low Noise (33 mVrms w/ 10 nF C and 52 mVrms w/out C )
nr
nr
MARKING DIAGRAM
• Low Shutdown Current (< 1 mA)
• Reverse Bias Protected
1
V8537
xxx
ALYWG
G
• 2.9 V to 12 V Supply Range
• Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and Adjustable Output
Voltages
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
xxx = Specific Device Marking
A
L
= Assembly Location
= Wafer Lot
Y
W
G
= Year
= Work Week
= Pb−Free Package
• These are Pb−Free Devices
Applications
(Note: Microdot may be in either location)
• Networking Systems, DSL/Cable Modems
• Audio Systems for Automotive Applications
• Navigation Systems
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 15 of this data sheet.
• Satellite Receivers
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
October, 2017 − Rev. 4
NCV8537/D
NCV8537
C
nr
ON
(Optional)
6
7
OFF
NC
NR
8
SD
IN
SENSE
3
2
1
9
OUT
10
V
in
V
out
OUT
IN
+
+
C
1.0 mF
out
C
1.0 mF
in
EP GND
PWRG
5
R1
100k
4
EP
PWRG
Figure 1. Typical Fixed Version Application Schematic
C
nr
R2
R3
(Optional)
ON
6
7
OFF
NC
NR
8
3
SD
IN
ADJ
OUT
OUT
9
2
1
10
V
in
V
out
IN
+
+
C
1.0 mF
out
EP GND
R1
100k
PWRG
5
C
in
4
EP
1.0 mF
PWRG
Figure 2. Typical Adjustable Version Application Schematic
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2
NCV8537
Comp.
PWRG
Vin
SD
Voltage
Reference
Enable
Block
Current and
Thermal
Protection
Circuit
Series Pass
Element with
Reverse Bias
Protection
Error
Amplifier
Vout
NR
ADJ
NCV8537 Adjustable
GND
Figure 3. Block Diagram, Adjustable Output Version
Comp.
PWRG
Vin
SD
Voltage
Reference
Enable
Block
Current and
Series Pass
Error
Amplifier
Thermal
Protection
Circuit
Element with
Reverse Bias
Protection
Vout
NR
SENSE
NCV8537 Fix
GND
Figure 4. Block Diagram, Fixed Output Version
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3
NCV8537
PIN FUNCTION DESCRIPTION
Pin No.
1, 2
Pin Name
Description
V
out
Regulated output voltage. Bypass to ground with C w 1.0 mF
out
3
SENSE/ADJ
For output voltage sensing, connect to Pins 1 and 2.at Fixed output Voltage version
Adjustable pin at Adjustable output version
4
GND
PWRG
NC
Power Supply Ground
5
6
Power Good
Not Connected
7
NR
Noise Reduction Pin. This is an optional pin used to further reduce noise.
Shutdown pin. When not in use, this pin should be connected to the input pin.
Power Supply Input Voltage
8
SD
9, 10
EPAD
V
in
EPAD
Exposed thermal pad should be connected to ground.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Input Voltage
V
in
−0.3 to +16
Output Voltage
V
out
−0.3 to V +0.3 or 10 V*
V
in
PWRG Pin Voltage
V
−0.3 to +16
−0.3 to +16
−40 to +150
−50 to +150
V
PWRG
Shutdown Pin Voltage
Junction Temperature Range
Storage Temperature Range
V
sh
V
T
J
°C
°C
T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114)
Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115)
Charged Device Model (CDM) tested per EIA/JESD22−C101.
*Which ever is less. Reverse bias protection feature valid only if (V − V ) ≤ 7 V.
out
in
THERMAL CHARACTERISTICS
Test Conditions (Typical Value)
Min Pad Board (Note 1)
1, Pad Board (Note 1)
Characteristic
Junction−to−Air, qJA
Unit
°C/W
°C/W
215
58
66
Junction−to−Pin, J−L4
18
1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and
heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions
are under natural convection or zero air flow.
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4
NCV8537
ELECTRICAL CHARACTERISTICS − 1.8 V
(V = 1.8 V typical, V = 2.9 V, T = −40°C to +125°C, unless otherwise noted, Note 2)
out
in
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
= 2.9 V to 5.8 V, I
V
out
−0.9%
1.783
1.8
+0.9%
1.817
V
V
= 0.1 mA to 500 mA, T = 25°C
in
load
A
Output Voltage (Accuracy)
= 2.9 V to 5.8 V, I
V
−1.4%
1.774
1.8
1.8
+1.4%
1.826
V
V
out
V
in
= 0.1 mA to 500 mA, T = 0°C to +85°C
load
A
Output Voltage (Accuracy)
V
out
−1.5%
1.773
+1.5%
1.827
V
in
= 2.9 V to 5.8 V, I
= 0.1 mA to 500 mA, T = −40°C to +125°C
load
A
Minimum Input Voltage
Line Regulation
V
2.9
V
inmin
Line
0.04
mV/V
Reg
V
in
= 2.9 V to 12 V, I
= 0.1 mA
load
Load Regulation
= 2.9 V, I
Load
0.04
mV/mA
mV
Reg
V
in
= 0.1 mA to 500 mA
load
Dropout Voltage (See Figure 9)
V
DO
I
I
I
= 500 mA (Notes 3, 4)
= 300 mA (Notes 3, 4)
= 50 mA (Notes 3, 4)
620
230
95
load
load
load
Peak Output Current (See Figures 14 and 17)
I
I
500
700
830
900
mA
mA
°C
pk
Short Output Current (See Figure 14) V < 7 V, T = 25°C
in
A
sc
Thermal Shutdown / Hysteresis
T
160/10
J
Ground Current
In Regulation
I
GND
I
I
I
I
= 500 mA (Note 3)
= 300 mA (Note 3)
= 50 mA
9.0
4.6
0.8
−
14
7.5
2.5
220
mA
mA
mA
mA
load
load
load
load
= 0.1 mA
In Dropout
= 2.2 V, I
V
in
= 0.1 mA
load
500
1.0
In Shutdown
= 0 V
V
SD
I
GNDsh
Output Noise
V
noise
C
= 0 nF, I
= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF
52
33
mVrms
mVrms
nr
nr
load
out
C
= 10 nF, I
= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF
load
out
Power Good Voltage
Low Threshold
Hysteresis
V
elft
% of
93
95
2
97
V
out
High Threshold
99
Power Good Pin Voltage Saturation (I − 1.0 mA)
V
200
1.0
50
mV
mA
ms
ef
efdo
Power Good Pin Leakage
I
efleak
Power Good Blanking Time (Note 7)
t
ef
Shutdown
V
SD
Threshold Voltage ON
Threshold Voltage OFF
2.0
V
V
0.4
1.0
1.0
SD Input Current, V = 0 V to 0.4 V or V = 2.0 V to V
I
0.07
0.07
10
mA
mA
mA
SD
SD
in
SD
Output Current In Shutdown Mode, V = 0 V
I
OSD
out
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V = 0 V, V = 1.8 V)
I
OUTR
in
out_forced
2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T = T = 25°C. Low
J
A
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. T must be greater than 0°C.
A
4. Maximum dropout voltage is limited by minimum input voltage V = 2.9 V recommended for guaranteed operation.
in
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5
NCV8537
ELECTRICAL CHARACTERISTICS − 2.5 V
(V = 2.5 V typical, V = 2.9 V, T = −40°C to +125°C, unless otherwise noted, Note 5)
out
in
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
= 2.9 V to 6.5 V, I
V
out
−0.9%
2.477
2.5
+0.9%
2.523
V
V
= 0.1 mA to 500 mA, T = 25°C
in
load
A
Output Voltage (Accuracy)
= 2.9 V to 6.5 V, I
V
−1.4%
2.465
2.5
2.5
+1.4%
2.535
V
V
out
V
in
= 0.1 mA to 500 mA, T = 0°C to +85°C
load
A
Output Voltage (Accuracy)
V
out
−1.5%
2.462
+1.5%
2.538
V
in
= 2.9 V to 6.5 V, I
= 0.1 mA to 500 mA, T = −40°C to +125°C
load
A
Minimum Input Voltage
Line Regulation
V
2.9
V
inmin
Line
0.04
mV/V
Reg
V
in
= 2.9 V to 12 V, I
= 0.1 mA
load
Load Regulation
= 2.9 V, I
Load
0.04
mV/mA
mV
Reg
V
in
= 0.1 mA to 500 mA
load
Dropout Voltage (See Figure 10)
V
DO
I
I
I
I
= 500 mA (Note 6)
= 300 mA (Note 6)
= 50 mA
340
230
110
10
load
load
load
load
= 0.1mA
Peak Output Current (See Figures 14 and 18)
I
I
500
700
800
900
mA
mA
°C
pk
Short Output Current (See Figure 14) V < 7 V, T = 25°C
in
A
sc
Thermal Shutdown / Hysteresis
T
160/10
J
Ground Current
In Regulation
I
GND
I
I
I
I
= 500 mA (Note 6)
= 300 mA (Note 6)
= 50 mA
9.0
4.6
0.8
−
14
7.5
2.5
220
mA
mA
mA
mA
load
load
load
load
= 0.1 mA
In Dropout
= 2.4 V, I
V
in
= 0.1 mA
load
500
1.0
In Shutdown
= 0 V
V
SD
I
GNDsh
Output Noise
V
noise
C
= 0 nF, I
= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF
56
35
mVrms
mVrms
nr
nr
load
out
C
= 10 nF, I
= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF
load
out
Power Good Voltage
Low Threshold
Hysteresis
V
elft
% of
93
95
2
97
V
out
High Threshold
99
Power Good Pin Voltage Saturation (I − 1.0 mA)
V
200
1.0
50
mV
mA
ms
ef
efdo
Power Good Pin Leakage
I
efleak
Power Good Blanking Time (Note 7)
t
ef
Shutdown
V
SD
Threshold Voltage ON
Threshold Voltage OFF
2.0
V
V
0.4
1.0
1.0
S
D
Input Current, V = 0 V to 0.4 V or V = 2.0 V to V
I
0.07
0.07
10
mA
mA
mA
SD
SD
in
SD
Output Current In Shutdown Mode, V = 0 V
I
OSD
out
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V = 0 V, V = 2.5 V)
I
OUTR
in
out_forced
5. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T = T = 25°C. Low
J
A
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
6. T must be greater than 0°C.
A
7. Can be disabled per customer request.
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6
NCV8537
ELECTRICAL CHARACTERISTICS − 3.3 V
(V = 3.3 V typical, V = 3.7 V, T = −40°C to +125°C, unless otherwise noted, Note 8)
out
in
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy) V
V
out
−0.90%
3.27
3.3
0.90%
3.33
V
in
V
in
= 3.7 V to 7.3 V, I
= 0.1 mA to 500 mA, T = 25°C
load
A
Output Voltage (Accuracy)
= 3.7 V to 7.3 V, I
V
−1.40%
3.254
3.3
3.3
1.40%
3.346
V
V
out
V
in
= 0.1 mA to 500 mA, T = 0°C to +85°C
load
A
Output Voltage (Accuracy)
V
out
−1.50%
3.25
1.50%
3.35
V
= 3.7 V to 7.3 V, I
= 0.1 mA to 500 mA, T = −40°C to +125°C
in
load
load
A
Line Regulation
= 3.7 V to 12 V, I
Line
0.04
0.04
mV/V
mV/mA
mV
Reg
V
in
= 0.1 mA
Load Regulation
= 3.7 V, I
Load
Reg
V
= 0.1 mA to 500 mA
load
in
Dropout Voltage
V
DO
I
I
I
I
= 500 mA
= 300 mA
= 50 mA
= 0.1 mA
340
230
110
10
load
load
load
load
Peak Output Current (See Figure 14)
I
I
500
700
800
900
mA
mA
°C
pk
Short Output Current (See Figure 14) V < 7 V, T = 25°C
in
A
sc
Thermal Shutdown / Hysteresis
T
160/10
J
Ground Current
In Regulation
I
GND
I
I
I
I
= 500 mA (Note 8)
= 300 mA
= 50 mA
9
14
7.5
2.5
220
mA
load
load
load
load
4.6
0.8
−
= 0.1 mA
mA
mA
In Dropout
V
in
= 3.7 V, I
= 0.1 mA
500
1
load
In Shutdown
= 0 V
V
SD
I
GNDsh
mA
Output Noise
V
noise
mVrms
C
= 0 nF, I
= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF
69
46
nr
nr
load
out
C
= 10 nF, I
= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF
load
out
Power Good Voltage
Low Threshold
Hysteresis
V
elft
% of
93
95
2
97
V
out
High Threshold
99
Power Good Pin Voltage Saturation (I = 1.0 mA)
V
200
1
mV
mA
ms
V
ef
efdo
Power Good Pin Leakage
I
efleak
Power Good Blanking Time (Note 9)
t
50
ef
Shutdown
V
SD
Threshold Voltage ON
Threshold Voltage OFF
2
0.4
1
SD Input Current, V = 0 V to 0.4 V or V = 2.0 V to V
I
0.07
0.07
10
mA
mA
mA
SD
SD
in
SD
Output Current In Shutdown Mode, V = 0 V
I
1
out
OSD
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V = 0 V, V = 3.3 V)
I
OUTR
in
out_forced
8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T = T = 25°C. Low
J
A
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
9. Can be disabled per customer request.
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7
NCV8537
ELECTRICAL CHARACTERISTICS − 5 V
(V = 5.0 V typical, V = 5.4 V, T = −40°C to +125°C, unless otherwise noted, Note 10)
out
in
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy) V
V
out
−0.90%
4.955
5
0.90%
5.045
V
in
V
in
= 5.4 V to 7.3 V, I
= 0.1 mA to 500 mA, T = 25°C
load
A
Output Voltage (Accuracy)
= 5.4 V to 7.3 V, I
V
−1.40%
4.93
5
5
1.40%
5.07
V
V
out
V
in
= 0.1 mA to 500 mA, T = 0°C to +85°C
load
A
Output Voltage (Accuracy)
V
out
−1.50%
4.925
1.50%
5.075
V
in
= 5.4 V to 7.3 V, I
= 0.1 mA to 500 mA, T = −40°C to +125°C
load
A
Line Regulation
= 5.4 V to 12 V, I
Line
0.04
0.04
mV/V
mV/mA
mV
Reg
V
in
= 0.1 mA
load
Load Regulation
= 5.4 V, I
Load
Reg
V
= 0.1 mA to 500 mA
load
in
Dropout Voltage
V
DO
I
I
I
I
= 500 mA
= 300 mA
= 50 mA
= 0.1 mA
340
230
110
10
load
load
load
load
Peak Output Current (See Figure 14)
I
I
500
700
830
930
mA
mA
°C
pk
Short Output Current (See Figure 14) V < 7 V, T = 25°C
in
A
sc
Thermal Shutdown / Hysteresis
T
160/10
J
Ground Current
In Regulation
I
GND
I
I
I
I
= 500 mA (Note 10)
= 300 mA
= 50 mA
9
14
7.5
2.5
220
mA
load
load
load
load
4.6
0.8
−
= 0.1 mA
mA
mA
In Dropout
= 3.2 V, I
V
in
= 0.1 mA
load
500
1
In Shutdown
= 0 V
V
SD
I
GNDsh
mA
Output Noise
V
noise
mVrms
C
= 0 nF, I
= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF
93
58
nr
nr
load
out
C
= 10 nF, I
= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF
load
out
Power Good Voltage
Low Threshold
Hysteresis
V
elft
% of
93
95
2
97
V
out
High Threshold
99
Power Good Pin Voltage Saturation (I = 1.0 mA)
V
200
1
mV
mA
ms
V
ef
efdo
Power Good Pin Leakage
I
efleak
Power Good Blanking Time (Note 11)
t
50
ef
Shutdown
V
SD
Threshold Voltage ON
Threshold Voltage OFF
2
0.4
1
SD Input Current, V = 0 V to 0.4 V or V = 2.0 V to V
I
0.07
0.07
10
mA
mA
mA
SD
SD
in
SD
Output Current In Shutdown Mode, V = 0 V
I
1
out
OSD
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V = 0 V, V = 5 V)
I
OUTR
in
out_forced
10.Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T = T = 25°C. Low
J
A
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
11. Can be disabled per customer request.
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8
NCV8537
ELECTRICAL CHARACTERISTICS − ADJUSTABLE
(V = 1.25 V typical, V = 2.9 V, T = −40°C to +125°C, unless otherwise noted, Note 12)
out
in
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reference Voltage (Accuracy)
= 2.9 V to V +4.0 V, I
V
ref
V
ref
V
ref
−0.90%
1.239
1.25
0.90%
1.261
V
V
in
= 0.1 mA to 500 mA, T = 25°C
out
load
A
Reference Voltage (Accuracy)
= 2.9 V to V + 4.0 V, I
−1.40%
1.233
1.25
1.25
1.40%
1.268
V
V
V
in
= 0.1 mA to 500 mA, T = 0°C to +85°C
out
load
A
Reference Voltage (Accuracy)
= 2.9 V to V + 4.0 V, I
−1.50%
1.231
1.50%
1.269
V
in
= 0.1 mA to 500 mA, T = −40°C to
out
load
A
+125°C
Line Regulation
Line
0.04
0.04
mV/V
mV/mA
mV
Reg
V
in
= 2.9 V to 12 V, I
= 0.1 mA
load
Load Regulation
= 2.9 V to 12 V, I
Load
Reg
V
in
= 0.1 mA to 500 mA
load
Dropout Voltage (V = 2.5 V − 10 V)
V
DO
out
I
I
I
I
= 500 mA
= 300 mA
= 50 mA
= 0.1 mA
340
230
110
10
load
load
load
load
Peak Output Current (See Figure 14)
I
I
500
700
830
mA
mA
pk
Short Output Current (See Figure 14) V < 7 V, T = 25°C
in
A
sc
V
v 3.3 V
> 3.3 V
900
930
out
V
out
Thermal Shutdown / Hysteresis
T
J
160/
10
°C
Ground Current
In Regulation
I
GND
I
I
I
I
= 500 mA (Note 12)
= 300 mA
= 50 mA
9
4.6
0.8
14
7.5
2.5
220
mA
load
load
load
load
= 0.1 mA
mA
mA
mA
In Dropout
Vin = V + 0.1 V or 2.9 V (whichever is higher), I
= 0.1 mA
load
500
1
out
In Shutdown
V
SD
= 0 V
I
GNDsh
Output Noise
V
noise
mV
rms
C
= 0 nF, I
= 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
69
46
nr
nr
load
C
= 10 nF, I
= 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
load
Power Good Voltage
Low Threshold
Hysteresis
V
elft
% of
93
95
2
97
V
out
High Threshold
99
Power Good Pin Voltage Saturation (I = 1.0 mA)
V
200
1
mV
mA
ms
V
ef
efdo
Power Good Pin Leakage
I
efleak
Power Good Pin Blanking Time (Note 13)
t
50
ef
Shutdown
V
SD
Threshold Voltage ON
Threshold Voltage OFF
2
0.4
SD Input Current, V = 0 V to 0.4 V or V = 2.0 V to V
I
mA
SD
SD
in
SD
V
in
V
in
v 5.4 V
> 5.4 V
0.07
1
5
Output Current In Shutdown Mode, V = 0 V
I
0.07
1
1
mA
mA
out
OSD
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V = 0 V, V = V v 7 V)
I
OUTR
in
out_forced
out (nom)
12.Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T = T = 25°C. Low
J
A
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
13.Can be disabled per customer request.
www.onsemi.com
9
NCV8537
2.52
2.515
2.51
1.85
1.84
1.83
1.82
1.81
1.8
V
I
= 2.9 V
V
I
= 2.9 V
IN
IN
= 0
= 0
OUT
OUT
2.505
2.5
V
OUT
= 2.5 V
2.495
2.49
V
= 1.8 V
OUT
1.79
1.78
1.77
1.76
1.75
2.485
2.48
2.475
2.47
−40 −20
0
20
40
60
80 100 120 140
−40 −20
0
20
40
60
80 100 120 140
T , TEMPERATURE (°C)
A
T , TEMPERATURE (°C)
A
Figure 5. Output Voltage vs. Temperature
1.8 V Version
Figure 6. Output Voltage vs. Temperature
2.5 V Version
3.320
3.315
3.310
3.305
3.300
3.295
3.290
3.285
3.280
3.275
3.270
5.1
5.05
5
V
I
= 3.7 V
V
I
= 5.4 V
IN
IN
= 0
= 0
OUT
OUT
V
= 3.3 V
V
OUT
= 5.0 V
OUT
4.95
4.9
4.85
−40 −20
0
20
40
60
80 100 120 140
−40 −20
0
20
40
60
80 100 120 140
T , TEMPERATURE (°C)
A
T , TEMPERATURE (°C)
A
Figure 7. Output Voltage vs. Temperature 3.3 V
Version
Figure 8. Output Voltage vs. Temperature 5.0 V
Version
900
800
700
600
500
400
300
200
100
0
400
350
300
250
200
150
100
50
500 mA
300 mA
500 mA
300 mA
50 mA
50 mA
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
T , TEMPERATURE (°C)
A
T , TEMPERATURE (°C)
A
Figure 9. Dropout Voltage vs. Temperature
1.8 V Version
Figure 10. Dropout Voltage vs. Temperature
2.5 V Version
www.onsemi.com
10
NCV8537
400
350
300
250
200
150
100
50
350
300
250
200
150
100
50
500 mA
500 mA
300 mA
300 mA
50 mA
50 mA
0
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
T , TEMPERATURE (°C)
A
T , TEMPERATURE (°C)
A
Figure 11. Dropout Voltage vs. Temperature
3.3 V Version
Figure 12. Dropout Voltage vs. Temperature
5.0 V Version
1000
900
800
700
600
500
400
300
200
100
0
0.97 V
out
I
sc
I
pk
V
= 2.9 V
IN
V
OUT
= 1.8 V
I
pk
I
sc
0
20
40
60
80
100
120
140
I
(mA)
out
(For specific values of I and I , please refer to Figure 13)
pk
sc
T , TEMPERATURE (°C)
A
Figure 13. Peak and Short Current
vs. Temperature
Figure 14. Output Voltage vs. Output Current
12
10
8
12
V
= 2.9 V
= 1.8 V
IN
V
= 2.9 V
= 1.8 V
IN
V
OUT
V
OUT
10
8
T = 25°C
A
500 mA
6
6
300 mA
4
4
2
2
50 mA
0
0
0
0
0.1
0.2
, OUTPUT CURRENT (A)
OUT
0.3
0.4
0.5
20
40
60
80
100
120
140
T , TEMPERATURE (°C)
I
A
Figure 15. Ground Current vs. Temperature
Figure 16. Ground Current vs. Output Current
www.onsemi.com
11
NCV8537
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25°C
25°C
0°C
0°C
−20°C
−40°C
−20°C
−40°C
V
= 2.9 V
= 2.5 V
IN
V
= 2.9 V
= 1.8 V
IN
V
OUT
V
OUT
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
3.5
3.4
3.3
3.2
3.1
3
2.9
2.8
2.7
V
IN
, INPUT VOLTAGE (V)
V , INPUT VOLTAGE (V)
IN
Figure 17. Output Current Capability for the
1.8 V Version
Figure 18. Output Current Capability for the
2.5 V Version
100
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
V
= 3.4 V +0.5 V Modulation
PP
IN
V
OUT
= 2.5 V
T = 25°C
A
I
= 50 mA
out
I
= 50 mA
out
I
= 0.5 A
out
I
= 0.5 A
out
I
= 0.25 A
out
V
= 2.9 V +0.5 V Modulation
PP
I
= 0.25 A
IN
out
V
OUT
= 1.25 V
T = 25°C
A
100
1k
10k
F, FREQUENCY (Hz)
100k
1M
100
1k
10k
F, FREQUENCY (Hz)
100k
1M
Figure 20. PSRR vs. Frequency Adjustable
Version
Figure 21. PSRR vs. Frequency 2.5 V Version
600
500
400
300
200
100
0
600
500
400
300
200
100
0
C
= 0 nF
C = 0 nF
nr
nr
C
= 10 nF
nr
C
= 10 nF
nr
V
= 2.9 V
= 1.25 V
V
= 2.9 V
= 2.5 V
IN
IN
V
V
OUT
OUT
T = 25°C
T = 25°C
A
A
10
100
1k
10k
100k
1M
10
100
1k
10k
100k
1M
F, FREQUENCY (Hz)
F, FREQUENCY (Hz)
Figure 22. Output Noise Density Adjustable
Version
Figure 23. Output Noise Density 2.5 V Version
www.onsemi.com
12
NCV8537
Figure 24. Power Good Activation
Figure 25. Power Good Inactivation
300
250
200
150
15
10
V
in
at Data Sheet Test Conditions,
25°C, 1 mF Capacitance
Unstable Area
Stable Area
1 oz CF
2 oz CF
5.0
0
100
50
0
0
100
200
300
400
500
0
100
200
300
400
500
600
700
2
OUTPUT CURRENT (mA)
COPPER HEAT SPREADING AREA (mm )
Figure 26. Stability with ESR vs. Output
Current
Figure 27. DFN10 Self−Heating Thermal
Characterstics as a Function of Copper Area
on the PCB
NOTE: Typical characteristics were measured with the same conditions as electrical characteristics.
www.onsemi.com
13
NCV8537
APPLICATIONS INFORMATION
Reverse Bias Protection
temperature is exceeded. This feature provides protection
from a catastrophic device failure due to accidental
overheating. This protection feature is not intended to be used
as a substitute to heat sinking. The maximum power that can
be dissipated, can be calculated with the equation below:
Reverse bias is a condition caused when the input voltage
goes to zero, but the output voltage is kept high either by a
large output capacitor or another source in the application
which feeds the output pin.
Normally in a bipolar LDO all the current will flow from
the output pin to input pin through the PN junction with
limited current capability and with the potential to destroy
the IC.
Due to an improved architecture, the NCV8537 can
withstand up to 7.0 V on the output pin with virtually no
current flowing from output pin to input pin, and only
negligible amount of current (tens of mA) flowing from the
output pin to ground for infinite duration.
T
* T
A
J(max)
(eq. 1)
P
+
D
R
qJA
For improved thermal performance, contact the factory
for the DFN package option. The DFN package includes an
exposed metal pad that is specifically designed to reduce the
junction to air thermal resistance, R
.
qJA
Adjustable Operation
The output voltage can be set by using a resistor divider
as shown in Figure 2 with a range of 1.25 to 10 V. The
appropriate resistor divider can be found by solving the
equation below. The recommended current through the
resistor divider is from 10 mA to 100 mA. This can be
accomplished by selecting resistors in the kW range. As
Input Capacitor
An input capacitor of at least 1.0 mF, any type, is
recommended to improve the transient response of the
regulator and/or if the regulator is located more than a few
inches from the power source. It will also reduce the circuit’s
sensitivity to the input line impedance at high frequencies.
The capacitor should be mounted with the shortest possible
track length directly across the regular’s input terminals.
result, the I * R2 becomes negligible in the equation and
adj
can be ignored.
V
out + 1.25 * (1 ) R3ńR2) ) Iadj * R2
(eq. 2)
Output Capacitor
Power Good Operation
The NCV8537 remains stable with any type of capacitor
as long as it fulfills its 1.0 mF requirement. There are no
constraints on the minimum ESR and it will remain stable up
to an ESR of 5.0 W. Larger capacitor values will improve the
noise rejection and load transient response.
The Power Good pin on the NCV8537 will produce a
logic Low when it drops below the nominal output voltage.
Refer to the electrical characteristics for the threshold values
at which point the Power Good goes Low. When the
NCV8537 is above the nominal output voltage, the
Power Good will remain at logic High.
Noise Reduction Pin
Output noise can be greatly reduced by connecting a 10 nF
The external pullup resistor needs to be connected
between V and the Power Good pin. A resistor of
in
capacitor (C ) between the noise reduction pin and ground
nr
approximately 100 kW is recommended to minimize the
current consumption. No pullup resistor is required if the
Power Good output is not being used. The Power Good does
not function during thermal shutdown and when the part is
disabled.
(see Figure 1). In applications where very low noise is not
required, the noise reduction pin can be left unconnected.
Dropout Voltage
The voltage dropout is measured at 97% of the nominal
output voltage.
Thermal Considerations
Internal thermal limiting circuitry is provided to protect the
integrated circuit in the event that the maximum junction
www.onsemi.com
14
NCV8537
ORDERING INFORMATION
†
Device*
Voltage Option
Marking
V8537 180
V8537 250
V8537 330
V8537 500
V8537 ADJ
L8537 180
L8537 250
L8537 330
L8537 500
L8537 ADJ
Package
Package
Shipping
NCV8537MN180R2G
NCV8537MN250R2G
NCV8537MN330R2G
NCV8537MN500R2G
NCV8537MNADJR2G
NCV8537ML180R2G**
NCV8537ML250R2G**
NCV8537ML330R2G**
NCV8537ML500R2G**
NCV8537MLADJR2G**
1.8 V
2.5 V
3.3 V
5.0 V
Adj
DFN10
(Pb−Free)
Non−Wettable
Flank
3000 / Tape & Reel
1.8 V
2.5 V
3.3 V
5.0 V
Adj
DFN10
(Pb−Free)
Wettable Flank
SLP Process
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
**In Development.
www.onsemi.com
15
NCV8537
PACKAGE DIMENSIONS
DFN10, 3x3, 0.5P
CASE 485C
ISSUE E
D
A
B
NOTES:
L
L
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
L1
ALTERNATE A−1
ALTERNATE A−2
5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG
SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS
ONTO BOTTOM SURFACE OF TERMINAL b.
6. FOR DEVICE OPN CONTAINING W OPTION, DETAIL A AND B
ALTERNATE CONSTRUCTION ARE NOT APPLICABLE. WET-
TABLE FLANK CONSTRUCTION IS DETAIL B AS SHOWN ON
SIDE VIEW OF PACKAGE.
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTIONS
E
PIN ONE
REFERENCE
2X
0.15
C
A3
MILLIMETERS
EXPOSED Cu
MOLD CMPD
DIM MIN
0.80
A1 0.00
MAX
1.00
0.05
2X
0.15
C
TOP VIEW
A
A3
b
D
D2 2.40
E
0.20 REF
A1
C
(A3)
DETAIL B
ALTERNATE B−1
ALTERNATE B−2
0.18
0.30
0.10
0.08
C
C
3.00 BSC
DETAIL B
2.60
1.90
A
ALTERNATE
CONSTRUCTIONS
3.00 BSC
E2 1.70
10X
e
K
L
0.50 BSC
0.19 TYP
SEATING
PLANE
A1
A3
SIDE VIEW
D2
0.35
0.45
0.03
L1 0.00
DETAIL A
10X
L
A1
1
5
SOLDERING FOOTPRINT*
DETAIL B
WETTABLE FLANK OPTION
CONSTRUCTION
10X
0.55
2.64
PACKAGE
OUTLINE
E2
K
10
6
1.90
3.30
10X b
e
0.10
0.05
C
C
A B
NOTE 3
BOTTOM VIEW
10X
0.30
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
◊
NCV8537/D
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