NCV8537_17_技术文档

NCV8537

500 mA High Accuracy Low

Dropout Linear Regulator,

with Power Good Function

The NCV8537 is a high performance low dropout linear voltage

regulator. Based on the popular NCV8535, the device retains all the

best features of its predecessor which includes high accuracy,

excellent stability, low noise performance and reverse bias protection

but now includes a Power Good output signal to enable monitoring of

the supply system. The device is available with fixed or adjustable

outputs and is packaged in a 10 pin 3x3 mm DFN package.

www.onsemi.com

DFN10

MN SUFFIX

CASE 485C

Features

• High Accuracy Output Over Line and Load Variances ( 0.9% at

25°C)

PIN CONFIGURATION

• Operating Temperature Range: −40°C to 125°C

Pin 1, 2. V

out

• Power Good Output to Indicate the Regulator is Within Specified

3. Sense / ADJ

4. GND

5. PWRG

6. NC

Limits

• Stable Output with Low Value Capacitors of any type and with no

Minimum Load Current Requirement

7. NR

• Incorporates Current Limiting and Reverse Bias Protection

8. SD

9, 10. V

in

• Thermal Shutdown Protection

EP, GND

• Low Dropout Voltage at Full Load (340 mV typ at V = 3.3 V)

o

• Low Noise (33 mVrms w/ 10 nF C and 52 mVrms w/out C )

nr

MARKING DIAGRAM

• Low Shutdown Current (< 1 mA)

• Reverse Bias Protected

1

V8537

xxx

ALYWG

G

• 2.9 V to 12 V Supply Range

• Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and Adjustable Output

Voltages

• NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q100

Qualified and PPAP Capable

xxx = Specific Device Marking

A

L

= Assembly Location

= Wafer Lot

Y

W

G

= Year

= Work Week

= Pb−Free Package

• These are Pb−Free Devices

Applications

(Note: Microdot may be in either location)

• Networking Systems, DSL/Cable Modems

• Audio Systems for Automotive Applications

• Navigation Systems

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 15 of this data sheet.

• Satellite Receivers

This document contains information on some products that are still under development.

ON Semiconductor reserves the right to change or discontinue these products without

notice.

1

Publication Order Number:

October, 2017 − Rev. 4

NCV8537/D

NCV8537

C

nr

ON

(Optional)

6

7

OFF

NC

NR

8

SD

IN

SENSE

3

2

1

9

OUT

10

V

in

V

out

OUT

IN

+

C

1.0 mF

out

C

1.0 mF

in

EP GND

PWRG

5

R1

100k

4

EP

PWRG

Figure 1. Typical Fixed Version Application Schematic

C

nr

R2

R3

(Optional)

ON

6

7

OFF

NC

NR

8

3

SD

IN

ADJ

OUT

9

2

1

10

V

in

V

out

IN

+

C

1.0 mF

out

EP GND

R1

100k

PWRG

5

C

in

4

EP

1.0 mF

PWRG

Figure 2. Typical Adjustable Version Application Schematic

www.onsemi.com

2

NCV8537

Comp.

PWRG

Vin

SD

Voltage

Reference

Enable

Block

Current and

Thermal

Protection

Circuit

Series Pass

Element with

Reverse Bias

Protection

Error

Amplifier

Vout

NR

ADJ

NCV8537 Adjustable

GND

Figure 3. Block Diagram, Adjustable Output Version

Comp.

PWRG

Vin

SD

Voltage

Reference

Enable

Block

Current and

Series Pass

Error

Amplifier

Thermal

Protection

Circuit

Element with

Reverse Bias

Protection

Vout

NR

SENSE

NCV8537 Fix

GND

Figure 4. Block Diagram, Fixed Output Version

www.onsemi.com

3

NCV8537

PIN FUNCTION DESCRIPTION

Pin No.

1, 2

Pin Name

Description

V

out

Regulated output voltage. Bypass to ground with C w 1.0 mF

out

3

SENSE/ADJ

For output voltage sensing, connect to Pins 1 and 2.at Fixed output Voltage version

Adjustable pin at Adjustable output version

4

GND

PWRG

NC

Power Supply Ground

5

6

Power Good

Not Connected

7

NR

Noise Reduction Pin. This is an optional pin used to further reduce noise.

Shutdown pin. When not in use, this pin should be connected to the input pin.

Power Supply Input Voltage

8

SD

9, 10

EPAD

V

in

EPAD

Exposed thermal pad should be connected to ground.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

V

Input Voltage

V

in

−0.3 to +16

Output Voltage

V

out

−0.3 to V +0.3 or 10 V*

V

in

PWRG Pin Voltage

V

−0.3 to +16

−40 to +150

−50 to +150

V

PWRG

Shutdown Pin Voltage

Junction Temperature Range

Storage Temperature Range

V

sh

V

T

J

°C

T

stg

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

NOTE: This device series contains ESD protection and exceeds the following tests:

Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114)

Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115)

Charged Device Model (CDM) tested per EIA/JESD22−C101.

*Which ever is less. Reverse bias protection feature valid only if (V − V ) ≤ 7 V.

out

in

THERMAL CHARACTERISTICS

Test Conditions (Typical Value)

Min Pad Board (Note 1)

1, Pad Board (Note 1)

Characteristic

Junction−to−Air, qJA

Unit

°C/W

215

58

66

Junction−to−Pin, J−L4

18

1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and

heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions

are under natural convection or zero air flow.

www.onsemi.com

4

NCV8537

ELECTRICAL CHARACTERISTICS − 1.8 V

(V = 1.8 V typical, V = 2.9 V, T = −40°C to +125°C, unless otherwise noted, Note 2)

out

in

A

Characteristic

Symbol

Min

Typ

Max

Unit

Output Voltage (Accuracy)

= 2.9 V to 5.8 V, I

V

out

−0.9%

1.783

1.8

+0.9%

1.817

V

= 0.1 mA to 500 mA, T = 25°C

in

load

A

Output Voltage (Accuracy)

= 2.9 V to 5.8 V, I

V

−1.4%

1.774

1.8

+1.4%

1.826

V

out

V

in

= 0.1 mA to 500 mA, T = 0°C to +85°C

load

A

Output Voltage (Accuracy)

V

out

−1.5%

1.773

+1.5%

1.827

V

in

= 2.9 V to 5.8 V, I

= 0.1 mA to 500 mA, T = −40°C to +125°C

load

A

Minimum Input Voltage

Line Regulation

V

2.9

V

inmin

Line

0.04

mV/V

Reg

V

in

= 2.9 V to 12 V, I

= 0.1 mA

load

Load Regulation

= 2.9 V, I

Load

0.04

mV/mA

mV

Reg

V

in

= 0.1 mA to 500 mA

load

Dropout Voltage (See Figure 9)

V

DO

I

= 500 mA (Notes 3, 4)

= 300 mA (Notes 3, 4)

= 50 mA (Notes 3, 4)

620

230

95

load

Peak Output Current (See Figures 14 and 17)

I

500

700

830

900

mA

°C

pk

Short Output Current (See Figure 14) V < 7 V, T = 25°C

in

A

sc

Thermal Shutdown / Hysteresis

T

160/10

J

Ground Current

In Regulation

I

GND

I

= 500 mA (Note 3)

= 300 mA (Note 3)

= 50 mA

9.0

4.6

0.8

−

14

7.5

2.5

220

mA

load

= 0.1 mA

In Dropout

= 2.2 V, I

V

in

= 0.1 mA

load

500

1.0

In Shutdown

= 0 V

V

SD

I

GNDsh

Output Noise

V

noise

C

= 0 nF, I

= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF

52

33

mVrms

nr

load

out

C

= 10 nF, I

= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF

load

out

Power Good Voltage

Low Threshold

Hysteresis

V

elft

% of

93

95

2

97

V

out

High Threshold

99

Power Good Pin Voltage Saturation (I − 1.0 mA)

V

200

1.0

50

mV

mA

ms

ef

efdo

Power Good Pin Leakage

I

efleak

Power Good Blanking Time (Note 7)

t

ef

Shutdown

V

SD

Threshold Voltage ON

Threshold Voltage OFF

2.0

V

0.4

1.0

SD Input Current, V = 0 V to 0.4 V or V = 2.0 V to V

I

0.07

10

mA

SD

in

SD

Output Current In Shutdown Mode, V = 0 V

I

OSD

out

Reverse Bias Protection, Current Flowing from the Output Pin to GND

(V = 0 V, V = 1.8 V)

I

OUTR

in

out_forced

2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T = T = 25°C. Low

J

A

duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

3. T must be greater than 0°C.

A

4. Maximum dropout voltage is limited by minimum input voltage V = 2.9 V recommended for guaranteed operation.

in

www.onsemi.com

5

NCV8537

ELECTRICAL CHARACTERISTICS − 2.5 V

(V = 2.5 V typical, V = 2.9 V, T = −40°C to +125°C, unless otherwise noted, Note 5)

out

in

A

Characteristic

Symbol

Min

Typ

Max

Unit

Output Voltage (Accuracy)

= 2.9 V to 6.5 V, I

V

out

−0.9%

2.477

2.5

+0.9%

2.523

V

= 0.1 mA to 500 mA, T = 25°C

in

load

A

Output Voltage (Accuracy)

= 2.9 V to 6.5 V, I

V

−1.4%

2.465

2.5

+1.4%

2.535

V

out

V

in

= 0.1 mA to 500 mA, T = 0°C to +85°C

load

A

Output Voltage (Accuracy)

V

out

−1.5%

2.462

+1.5%

2.538

V

in

= 2.9 V to 6.5 V, I

= 0.1 mA to 500 mA, T = −40°C to +125°C

load

A

Minimum Input Voltage

Line Regulation

V

2.9

V

inmin

Line

0.04

mV/V

Reg

V

in

= 2.9 V to 12 V, I

= 0.1 mA

load

Load Regulation

= 2.9 V, I

Load

0.04

mV/mA

mV

Reg

V

in

= 0.1 mA to 500 mA

load

Dropout Voltage (See Figure 10)

V

DO

I

= 500 mA (Note 6)

= 300 mA (Note 6)

= 50 mA

340

230

110

10

load

= 0.1mA

Peak Output Current (See Figures 14 and 18)

I

500

700

800

900

mA

°C

pk

Short Output Current (See Figure 14) V < 7 V, T = 25°C

in

A

sc

Thermal Shutdown / Hysteresis

T

160/10

J

Ground Current

In Regulation

I

GND

I

= 500 mA (Note 6)

= 300 mA (Note 6)

= 50 mA

9.0

4.6

0.8

−

14

7.5

2.5

220

mA

load

= 0.1 mA

In Dropout

= 2.4 V, I

V

in

= 0.1 mA

load

500

1.0

In Shutdown

= 0 V

V

SD

I

GNDsh

Output Noise

V

noise

C

= 0 nF, I

= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF

56

35

mVrms

nr

load

out

C

= 10 nF, I

= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF

load

out

Power Good Voltage

Low Threshold

Hysteresis

V

elft

% of

93

95

2

97

V

out

High Threshold

99

Power Good Pin Voltage Saturation (I − 1.0 mA)

V

200

1.0

50

mV

mA

ms

ef

efdo

Power Good Pin Leakage

I

efleak

Power Good Blanking Time (Note 7)

t

ef

Shutdown

V

SD

Threshold Voltage ON

Threshold Voltage OFF

2.0

V

0.4

1.0

S

D

Input Current, V = 0 V to 0.4 V or V = 2.0 V to V

I

0.07

10

mA

SD

in

SD

Output Current In Shutdown Mode, V = 0 V

I

OSD

out

Reverse Bias Protection, Current Flowing from the Output Pin to GND

(V = 0 V, V = 2.5 V)

I

OUTR

in

out_forced

5. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T = T = 25°C. Low

J

A

duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

6. T must be greater than 0°C.

A

7. Can be disabled per customer request.

www.onsemi.com

6

NCV8537

ELECTRICAL CHARACTERISTICS − 3.3 V

(V = 3.3 V typical, V = 3.7 V, T = −40°C to +125°C, unless otherwise noted, Note 8)

out

in

A

Characteristic

Symbol

Min

Typ

Max

Unit

Output Voltage (Accuracy) V

V

out

−0.90%

3.27

3.3

0.90%

3.33

V

in

V

in

= 3.7 V to 7.3 V, I

= 0.1 mA to 500 mA, T = 25°C

load

A

Output Voltage (Accuracy)

= 3.7 V to 7.3 V, I

V

−1.40%

3.254

3.3

1.40%

3.346

V

out

V

in

= 0.1 mA to 500 mA, T = 0°C to +85°C

load

A

Output Voltage (Accuracy)

V

out

−1.50%

3.25

1.50%

3.35

V

= 3.7 V to 7.3 V, I

= 0.1 mA to 500 mA, T = −40°C to +125°C

in

load

A

Line Regulation

= 3.7 V to 12 V, I

Line

0.04

mV/V

mV/mA

mV

Reg

V

in

= 0.1 mA

Load Regulation

= 3.7 V, I

Load

Reg

V

= 0.1 mA to 500 mA

load

in

Dropout Voltage

V

DO

I

= 500 mA

= 300 mA

= 50 mA

= 0.1 mA

340

230

110

10

load

Peak Output Current (See Figure 14)

I

500

700

800

900

mA

°C

pk

Short Output Current (See Figure 14) V < 7 V, T = 25°C

in

A

sc

Thermal Shutdown / Hysteresis

T

160/10

J

Ground Current

In Regulation

I

GND

I

= 500 mA (Note 8)

= 300 mA

= 50 mA

9

14

7.5

2.5

220

mA

load

4.6

0.8

−

= 0.1 mA

mA

In Dropout

V

in

= 3.7 V, I

= 0.1 mA

500

1

load

In Shutdown

= 0 V

V

SD

I

GNDsh

mA

Output Noise

V

noise

mVrms

C

= 0 nF, I

= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF

69

46

nr

load

out

C

= 10 nF, I

= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF

load

out

Power Good Voltage

Low Threshold

Hysteresis

V

elft

% of

93

95

2

97

V

out

High Threshold

99

Power Good Pin Voltage Saturation (I = 1.0 mA)

V

200

1

mV

mA

ms

V

ef

efdo

Power Good Pin Leakage

I

efleak

Power Good Blanking Time (Note 9)

t

50

ef

Shutdown

V

SD

Threshold Voltage ON

Threshold Voltage OFF

2

0.4

1

SD Input Current, V = 0 V to 0.4 V or V = 2.0 V to V

I

0.07

10

mA

SD

in

SD

Output Current In Shutdown Mode, V = 0 V

I

1

out

OSD

Reverse Bias Protection, Current Flowing from the Output Pin to GND

(V = 0 V, V = 3.3 V)

I

OUTR

in

out_forced

8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T = T = 25°C. Low

J

A

duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

9. Can be disabled per customer request.

www.onsemi.com

7

NCV8537

ELECTRICAL CHARACTERISTICS − 5 V

(V = 5.0 V typical, V = 5.4 V, T = −40°C to +125°C, unless otherwise noted, Note 10)

out

in

A

Characteristic

Symbol

Min

Typ

Max

Unit

Output Voltage (Accuracy) V

V

out

−0.90%

4.955

5

0.90%

5.045

V

in

V

in

= 5.4 V to 7.3 V, I

= 0.1 mA to 500 mA, T = 25°C

load

A

Output Voltage (Accuracy)

= 5.4 V to 7.3 V, I

V

−1.40%

4.93

5

1.40%

5.07

V

out

V

in

= 0.1 mA to 500 mA, T = 0°C to +85°C

load

A

Output Voltage (Accuracy)

V

out

−1.50%

4.925

1.50%

5.075

V

in

= 5.4 V to 7.3 V, I

= 0.1 mA to 500 mA, T = −40°C to +125°C

load

A

Line Regulation

= 5.4 V to 12 V, I

Line

0.04

mV/V

mV/mA

mV

Reg

V

in

= 0.1 mA

load

Load Regulation

= 5.4 V, I

Load

Reg

V

= 0.1 mA to 500 mA

load

in

Dropout Voltage

V

DO

I

= 500 mA

= 300 mA

= 50 mA

= 0.1 mA

340

230

110

10

load

Peak Output Current (See Figure 14)

I

500

700

830

930

mA

°C

pk

Short Output Current (See Figure 14) V < 7 V, T = 25°C

in

A

sc

Thermal Shutdown / Hysteresis

T

160/10

J

Ground Current

In Regulation

I

GND

I

= 500 mA (Note 10)

= 300 mA

= 50 mA

9

14

7.5

2.5

220

mA

load

4.6

0.8

−

= 0.1 mA

mA

In Dropout

= 3.2 V, I

V

in

= 0.1 mA

load

500

1

In Shutdown

= 0 V

V

SD

I

GNDsh

mA

Output Noise

V

noise

mVrms

C

= 0 nF, I

= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF

93

58

nr

load

out

C

= 10 nF, I

= 500 mA, f = 10 Hz to 100 kHz, C = 10 mF

load

out

Power Good Voltage

Low Threshold

Hysteresis

V

elft

% of

93

95

2

97

V

out

High Threshold

99

Power Good Pin Voltage Saturation (I = 1.0 mA)

V

200

1

mV

mA

ms

V

ef

efdo

Power Good Pin Leakage

I

efleak

Power Good Blanking Time (Note 11)

t

50

ef

Shutdown

V

SD

Threshold Voltage ON

Threshold Voltage OFF

2

0.4

1

SD Input Current, V = 0 V to 0.4 V or V = 2.0 V to V

I

0.07

10

mA

SD

in

SD

Output Current In Shutdown Mode, V = 0 V

I

1

out

OSD

Reverse Bias Protection, Current Flowing from the Output Pin to GND

(V = 0 V, V = 5 V)

I

OUTR

in

out_forced

10.Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T = T = 25°C. Low

J

A

duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

11. Can be disabled per customer request.

www.onsemi.com

8

NCV8537

ELECTRICAL CHARACTERISTICS − ADJUSTABLE

(V = 1.25 V typical, V = 2.9 V, T = −40°C to +125°C, unless otherwise noted, Note 12)

out

in

A

Characteristic

Symbol

Min

Typ

Max

Unit

Reference Voltage (Accuracy)

= 2.9 V to V +4.0 V, I

V

ref

V

ref

V

ref

−0.90%

1.239

1.25

0.90%

1.261

V

in

= 0.1 mA to 500 mA, T = 25°C

out

load

A

Reference Voltage (Accuracy)

= 2.9 V to V + 4.0 V, I

−1.40%

1.233

1.25

1.40%

1.268

V

in

= 0.1 mA to 500 mA, T = 0°C to +85°C

out

load

A

Reference Voltage (Accuracy)

= 2.9 V to V + 4.0 V, I

−1.50%

1.231

1.50%

1.269

V

in

= 0.1 mA to 500 mA, T = −40°C to

out

load

A

+125°C

Line Regulation

Line

0.04

mV/V

mV/mA

mV

Reg

V

in

= 2.9 V to 12 V, I

= 0.1 mA

load

Load Regulation

= 2.9 V to 12 V, I

Load

Reg

V

in

= 0.1 mA to 500 mA

load

Dropout Voltage (V = 2.5 V − 10 V)

V

DO

out

I

= 500 mA

= 300 mA

= 50 mA

= 0.1 mA

340

230

110

10

load

Peak Output Current (See Figure 14)

I

500

700

830

mA

pk

Short Output Current (See Figure 14) V < 7 V, T = 25°C

in

A

sc

V

v 3.3 V

> 3.3 V

900

930

out

V

out

Thermal Shutdown / Hysteresis

T

J

160/

10

°C

Ground Current

In Regulation

I

GND

I

= 500 mA (Note 12)

= 300 mA

= 50 mA

9

4.6

0.8

14

7.5

2.5

220

mA

load

= 0.1 mA

mA

In Dropout

Vin = V + 0.1 V or 2.9 V (whichever is higher), I

= 0.1 mA

load

500

1

out

In Shutdown

V

SD

= 0 V

I

GNDsh

Output Noise

V

noise

mV

rms

C

= 0 nF, I

= 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF

69

46

nr

load

C

= 10 nF, I

= 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF

load

Power Good Voltage

Low Threshold

Hysteresis

V

elft

% of

93

95

2

97

V

out

High Threshold

99

Power Good Pin Voltage Saturation (I = 1.0 mA)

V

200

1

mV

mA

ms

V

ef

efdo

Power Good Pin Leakage

I

efleak

Power Good Pin Blanking Time (Note 13)

t

50

ef

Shutdown

V

SD

Threshold Voltage ON

Threshold Voltage OFF

2

0.4

SD Input Current, V = 0 V to 0.4 V or V = 2.0 V to V

I

mA

SD

in

SD

V

in

V

in

v 5.4 V

> 5.4 V

0.07

1

5

Output Current In Shutdown Mode, V = 0 V

I

0.07

1

mA

out

OSD

Reverse Bias Protection, Current Flowing from the Output Pin to GND

(V = 0 V, V = V v 7 V)

I

OUTR

in

out_forced

out (nom)

12.Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T = T = 25°C. Low

J

A

duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

13.Can be disabled per customer request.

www.onsemi.com

9

NCV8537

2.52

2.515

2.51

1.85

1.84

1.83

1.82

1.81

1.8

V

I

= 2.9 V

V

I

= 2.9 V

IN

= 0

OUT

2.505

2.5

V

OUT

= 2.5 V

2.495

2.49

V

= 1.8 V

OUT

1.79

1.78

1.77

1.76

1.75

2.485

2.48

2.475

2.47

−40 −20

0

20

40

60

80 100 120 140

−40 −20

0

20

40

60

80 100 120 140

T , TEMPERATURE (°C)

A

T , TEMPERATURE (°C)

A

Figure 5. Output Voltage vs. Temperature

1.8 V Version

Figure 6. Output Voltage vs. Temperature

2.5 V Version

3.320

3.315

3.310

3.305

3.300

3.295

3.290

3.285

3.280

3.275

3.270

5.1

5.05

5

V

I

= 3.7 V

V

I

= 5.4 V

IN

= 0

OUT

V

= 3.3 V

V

OUT

= 5.0 V

OUT

4.95

4.9

4.85

−40 −20

0

20

40

60

80 100 120 140

−40 −20

0

20

40

60

80 100 120 140

T , TEMPERATURE (°C)

A

T , TEMPERATURE (°C)

A

Figure 7. Output Voltage vs. Temperature 3.3 V

Version

Figure 8. Output Voltage vs. Temperature 5.0 V

Version

900

800

700

600

500

400

300

200

100

0

400

350

300

250

200

150

100

50

500 mA

300 mA

500 mA

300 mA

50 mA

0

20

40

60

80

100

120

140

0

20

40

60

80

100

120

140

T , TEMPERATURE (°C)

A

T , TEMPERATURE (°C)

A

Figure 9. Dropout Voltage vs. Temperature

1.8 V Version

Figure 10. Dropout Voltage vs. Temperature

2.5 V Version

www.onsemi.com

10

NCV8537

400

350

300

250

200

150

100

50

350

300

250

200

150

100

50

500 mA

300 mA

50 mA

0

20

40

60

80

100

120

140

0

20

40

60

80

100

120

140

T , TEMPERATURE (°C)

A

T , TEMPERATURE (°C)

A

Figure 11. Dropout Voltage vs. Temperature

3.3 V Version

Figure 12. Dropout Voltage vs. Temperature

5.0 V Version

1000

900

800

700

600

500

400

300

200

100

0

0.97 V

out

I

sc

I

pk

V

= 2.9 V

IN

V

OUT

= 1.8 V

I

pk

I

sc

0

20

40

60

80

100

120

140

I

(mA)

out

(For specific values of I and I , please refer to Figure 13)

pk

sc

T , TEMPERATURE (°C)

A

Figure 13. Peak and Short Current

vs. Temperature

Figure 14. Output Voltage vs. Output Current

12

10

8

12

V

= 2.9 V

= 1.8 V

IN

V

= 2.9 V

= 1.8 V

IN

V

OUT

V

OUT

10

8

T = 25°C

A

500 mA

6

300 mA

4

2

50 mA

0

0.1

0.2

, OUTPUT CURRENT (A)

OUT

0.3

0.4

0.5

20

40

60

80

100

120

140

T , TEMPERATURE (°C)

I

A

Figure 15. Ground Current vs. Temperature

Figure 16. Ground Current vs. Output Current

www.onsemi.com

11

NCV8537

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

25°C

0°C

−20°C

−40°C

−20°C

−40°C

V

= 2.9 V

= 2.5 V

IN

V

= 2.9 V

= 1.8 V

IN

V

OUT

V

OUT

3.6

3.4

3.2

3

2.8

2.6

2.4

2.2

3.5

3.4

3.3

3.2

3.1

3

2.9

2.8

2.7

V

IN

, INPUT VOLTAGE (V)

V , INPUT VOLTAGE (V)

IN

Figure 17. Output Current Capability for the

1.8 V Version

Figure 18. Output Current Capability for the

2.5 V Version

100

90

80

70

60

50

40

30

20

10

0

90

80

70

60

50

40

30

20

10

0

V

= 3.4 V +0.5 V Modulation

PP

IN

V

OUT

= 2.5 V

T = 25°C

A

I

= 50 mA

out

I

= 50 mA

out

I

= 0.5 A

out

I

= 0.5 A

out

I

= 0.25 A

out

V

= 2.9 V +0.5 V Modulation

PP

I

= 0.25 A

IN

out

V

OUT

= 1.25 V

T = 25°C

A

100

1k

10k

F, FREQUENCY (Hz)

100k

1M

100

1k

10k

F, FREQUENCY (Hz)

100k

1M

Figure 20. PSRR vs. Frequency Adjustable

Version

Figure 21. PSRR vs. Frequency 2.5 V Version

600

500

400

300

200

100

0

600

500

400

300

200

100

0

C

= 0 nF

C = 0 nF

nr

C

= 10 nF

nr

C

= 10 nF

nr

V

= 2.9 V

= 1.25 V

V

= 2.9 V

= 2.5 V

IN

V

OUT

T = 25°C

A

10

100

1k

10k

100k

1M

10

100

1k

10k

100k

1M

F, FREQUENCY (Hz)

Figure 22. Output Noise Density Adjustable

Version

Figure 23. Output Noise Density 2.5 V Version

www.onsemi.com

12

NCV8537

Figure 24. Power Good Activation

Figure 25. Power Good Inactivation

300

250

200

150

15

10

V

in

at Data Sheet Test Conditions,

25°C, 1 mF Capacitance

Unstable Area

Stable Area

1 oz CF

2 oz CF

5.0

0

100

50

0

100

200

300

400

500

0

100

200

300

400

500

600

700

2

OUTPUT CURRENT (mA)

COPPER HEAT SPREADING AREA (mm )

Figure 26. Stability with ESR vs. Output

Current

Figure 27. DFN10 Self−Heating Thermal

Characterstics as a Function of Copper Area

on the PCB

NOTE: Typical characteristics were measured with the same conditions as electrical characteristics.

www.onsemi.com

13

NCV8537

APPLICATIONS INFORMATION

Reverse Bias Protection

temperature is exceeded. This feature provides protection

from a catastrophic device failure due to accidental

overheating. This protection feature is not intended to be used

as a substitute to heat sinking. The maximum power that can

be dissipated, can be calculated with the equation below:

Reverse bias is a condition caused when the input voltage

goes to zero, but the output voltage is kept high either by a

large output capacitor or another source in the application

which feeds the output pin.

Normally in a bipolar LDO all the current will flow from

the output pin to input pin through the PN junction with

limited current capability and with the potential to destroy

the IC.

Due to an improved architecture, the NCV8537 can

withstand up to 7.0 V on the output pin with virtually no

current flowing from output pin to input pin, and only

negligible amount of current (tens of mA) flowing from the

output pin to ground for infinite duration.

T

* T

A

J(max)

(eq. 1)

P

+

D

R

qJA

For improved thermal performance, contact the factory

for the DFN package option. The DFN package includes an

exposed metal pad that is specifically designed to reduce the

junction to air thermal resistance, R

.

qJA

Adjustable Operation

The output voltage can be set by using a resistor divider

as shown in Figure 2 with a range of 1.25 to 10 V. The

appropriate resistor divider can be found by solving the

equation below. The recommended current through the

resistor divider is from 10 mA to 100 mA. This can be

accomplished by selecting resistors in the kW range. As

Input Capacitor

An input capacitor of at least 1.0 mF, any type, is

recommended to improve the transient response of the

regulator and/or if the regulator is located more than a few

inches from the power source. It will also reduce the circuit’s

sensitivity to the input line impedance at high frequencies.

The capacitor should be mounted with the shortest possible

track length directly across the regular’s input terminals.

result, the I * R2 becomes negligible in the equation and

adj

can be ignored.

V

_out+ 1.25 * (1 ) R3ńR2) ) I_adj* R2

(eq. 2)

Output Capacitor

Power Good Operation

The NCV8537 remains stable with any type of capacitor

as long as it fulfills its 1.0 mF requirement. There are no

constraints on the minimum ESR and it will remain stable up

to an ESR of 5.0 W. Larger capacitor values will improve the

noise rejection and load transient response.

The Power Good pin on the NCV8537 will produce a

logic Low when it drops below the nominal output voltage.

Refer to the electrical characteristics for the threshold values

at which point the Power Good goes Low. When the

NCV8537 is above the nominal output voltage, the

Power Good will remain at logic High.

Noise Reduction Pin

Output noise can be greatly reduced by connecting a 10 nF

The external pullup resistor needs to be connected

between V and the Power Good pin. A resistor of

in

capacitor (C ) between the noise reduction pin and ground

nr

approximately 100 kW is recommended to minimize the

current consumption. No pullup resistor is required if the

Power Good output is not being used. The Power Good does

not function during thermal shutdown and when the part is

disabled.

(see Figure 1). In applications where very low noise is not

required, the noise reduction pin can be left unconnected.

Dropout Voltage

The voltage dropout is measured at 97% of the nominal

output voltage.

Thermal Considerations

Internal thermal limiting circuitry is provided to protect the

integrated circuit in the event that the maximum junction

www.onsemi.com

14

NCV8537

ORDERING INFORMATION

†

Device*

Voltage Option

Marking

V8537 180

V8537 250

V8537 330

V8537 500

V8537 ADJ

L8537 180

L8537 250

L8537 330

L8537 500

L8537 ADJ

Package

Shipping

NCV8537MN180R2G

NCV8537MN250R2G

NCV8537MN330R2G

NCV8537MN500R2G

NCV8537MNADJR2G

NCV8537ML180R2G**

NCV8537ML250R2G**

NCV8537ML330R2G**

NCV8537ML500R2G**

NCV8537MLADJR2G**

1.8 V

2.5 V

3.3 V

5.0 V

Adj

DFN10

(Pb−Free)

Non−Wettable

Flank

3000 / Tape & Reel

1.8 V

2.5 V

3.3 V

5.0 V

Adj

DFN10

(Pb−Free)

Wettable Flank

SLP Process

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP

Capable.

**In Development.

www.onsemi.com

15

NCV8537

PACKAGE DIMENSIONS

DFN10, 3x3, 0.5P

CASE 485C

ISSUE E

D

A

B

NOTES:

L

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS

MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS

THE TERMINALS.

L1

ALTERNATE A−1

ALTERNATE A−2

5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG

SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS

ONTO BOTTOM SURFACE OF TERMINAL b.

6. FOR DEVICE OPN CONTAINING W OPTION, DETAIL A AND B

ALTERNATE CONSTRUCTION ARE NOT APPLICABLE. WET-

TABLE FLANK CONSTRUCTION IS DETAIL B AS SHOWN ON

SIDE VIEW OF PACKAGE.

DETAIL A

ALTERNATE TERMINAL

CONSTRUCTIONS

E

PIN ONE

REFERENCE

2X

0.15

C

A3

MILLIMETERS

EXPOSED Cu

MOLD CMPD

DIM MIN

0.80

A1 0.00

MAX

1.00

0.05

2X

0.15

C

TOP VIEW

A

A3

b

D

D2 2.40

E

0.20 REF

A1

C

(A3)

DETAIL B

ALTERNATE B−1

ALTERNATE B−2

0.18

0.30

0.10

0.08

C

3.00 BSC

DETAIL B

2.60

1.90

A

ALTERNATE

CONSTRUCTIONS

3.00 BSC

E2 1.70

10X

e

K

L

0.50 BSC

0.19 TYP

SEATING

PLANE

A1

A3

SIDE VIEW

D2

0.35

0.45

0.03

L1 0.00

DETAIL A

10X

L

A1

1

5

SOLDERING FOOTPRINT*

DETAIL B

WETTABLE FLANK OPTION

CONSTRUCTION

10X

0.55

2.64

PACKAGE

OUTLINE

E2

K

10

6

1.90

3.30

10X b

e

0.10

0.05

C

A B

NOTE 3

BOTTOM VIEW

10X

0.30

0.50

PITCH

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

◊

NCV8537/D

www.onsemi.com

16


型号：	NCV8537_17
厂家：	ONSEMI
描述：	High Accuracy Low Dropout Linear Regulator
文件：	总16页 (文件大小：1288K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NCV8537_17 [ONSEMI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E