NDC10170A [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, Die;
| 型号： | NDC10170A |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, Die |
| 文件： | 总6页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
10 A, 1700 V, D1, Die
1. Cathode
2. Anode
Schottky Diode
NDC10170A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Anode
Features
CROSS SECTION
Max Junction Temperature 175C
Avalanche Rated 156 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Industrial Motor Loads, Wind Generation Inverter, Solar Inverter,
UPS
Power Switching Circuits
Die Information
Wafer Diameter: 6 inch
Die Size: 2660 2660 mm
(include Scribe Lane)
Metallization:
Top: Ti/TiN/AlSiCu
Back: Ti/NiV/Ag
Die Thickness: Typ. 200 mm
Bonding Pad Size:
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Anode: 1985 1985 mm
Recommended Wire Bond (Note 1)
Anode: 15 mil 2
NOTE:
1. Based on TO−247 package
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2023 − Rev. 3
NDC10170A/D
NDC10170A
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Value
1700
156
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Notes 2 and 4)
Continuous Rectified Forward Current @ T < 157C
E
AS
mJ
A
I
F
10
C
Continuous Rectified Forward Current @ T < 135C
16
C
I
Non-Repetitive Peak Forward Surge Current
868
A
A
T
C
T
C
= 25C, 10 ms
= 150C, 10 ms
F, Max
798
I
Non-Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
105
A
F,SM
p
Ptot
T
C
C
= 25C
185
W
W
C
T
= 150C
31
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. E of 156 mJ is based on starting T = 25C, L = 0.5 mH, I = 25 A, V = 50 V.
AS
FMax
J
AS
3. I
, and I
AS
surge test value are limited by measurement limitation, it’s not product capability
FSM
4. DC, E and Curve test result base on TO247 package
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case, Max
Value
Unit
R
0.81
C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Forward Voltage
Test Condition
I = 10 A, T = 25C
Min
−
Typ
1.5
Max
−
Unit
V
F
V
F
J
I = 10 A, T = 125C
−
1.87
2.19
0.09
0.42
2.46
74
−
F
J
I = 10 A, T = 175C
−
−
F
J
I
R
Reverse Current
V
R
V
R
V
R
= 1700 V, T = 25C
−
40
60
100
−
mA
J
= 1700 V, T = 125C
−
J
= 1700 V, T = 175C
−
J
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
856
69
−
−
−
−
48
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NDC10170A
The Configuration of Chips
(Based on 6 inch Wafer)
chip
chip
PSPI Passivation Line
Scribe Lane
80.0 mm
chip
chip
Sawn−on−film frame packing based on tested wafer
ORDERING INFORMATION
Part Number
Die Size with SL (mm)
Package
Shipping
NDC10170A
2660 x 2660
N/A
Wafer Sales
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3
NDC10170A
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED)
J
20
15
1E−05
T = −55C
T = 175C
J
J
T = 125C
J
T = 25C
J
1E−06
T = 75C
J
T = 75C
J
10
5
T = 125C
J
1E−07
1E−08
T = −55C
J
T = 175C
J
T = 25C
J
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
500
1000
1500
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
200
180
160
140
120
100
80
200
175
150
125
100
75
D = 0.1
D = 0.2
D = 0.7
D = 0.3
D = 0.5
60
50
40
25
0
D = 1.0
20
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (C)
C
T , CASE TEMPERATURE (C)
C
Figure 3. Current Derating
Figure 4. Power Derating
80
70
60
50
40
30
20
2000
1000
100
10
10
0
0
100 200
300
400 500
600
700 800
0.1
1
10
100
800
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitive vs. Reverse Voltage
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NDC10170A
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED)
J
25
20
15
10
5
0
0
100 200
300
400
500 600
700
800
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
P
DM
0.01
Single Pulse
Notes:
= 0.81C/W
R
q
JC
t
Peak T = P
x Z (t) + T
q
DM JC C
1
J
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 8. Junction−to−Case Transient Thermal Response Curve
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