NDD03N40ZT4G [ONSEMI]
Power MOSFET 400V 2.1A 3.4 OHM Single N-Channel DPAK;
| 型号： | NDD03N40ZT4G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 400V 2.1A 3.4 OHM Single N-Channel DPAK |
| 文件： | 总10页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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NDD03N40Z, NDT03N40Z
N-Channel Power MOSFET
400 V, 3.4 W
Features
• 100% Avalanche Tested
• Extremely High dv/dt Capability
• Gate Charge Minimized
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R
• Very Low Intrinsic Capacitance
• Improved Diode Reverse Recovery Characteristics
• Zener−protected
V
MAX
DS(ON)
(BR)DSS
400 V
3.4 W @ 10 V
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
N−Channel
D (2, 4)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
Symbol
NDD
NDT
Unit
V
V
DSS
400
30
V
GS
V
I
D
2.1
1.3
37
0.5
0.3
2.0
A
Steady State, T = 25°C (Note 1)
G (1)
C
Continuous Drain Current
I
D
A
Steady State, T = 100°C (Note 1)
C
Power Dissipation
P
D
W
S (3)
Steady State, T = 25°C
C
Pulsed Drain Current
I
8.0
2.1
7.2
0.5
A
A
DM
4
Continuous Source Current (Body
Diode)
I
S
1
2
3
Single Pulse Drain−to−Source
EAS
42
mJ
SOT−223
CASE 318E
STYLE 3
Avalanche Energy (I = 1 A)
D
Peak Diode Recovery (Note 2)
dV/dt
12
V/ns
Maximum Temperature for Soldering
Leads
T
L
260
°C
4
4
Operating Junction and Storage
Temperature
T , T
−55 to +150
°C
J
STG
2
1
2
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
3
3
DPAK
CASE 369C
STYLE 2
IPAK
CASE 369D
STYLE 2
2. I ≤ 2.4 A, di/dt ≤ 400 A/ms, V ≤ BV
, T = +150°C
J
S
DD
DSS
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
°C/W
°C/W
Junction−to−Case (Drain)
NDD03N40Z
R
R
3.4
q
MARKING & ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 3 of this data sheet.
JC
JA
Junction−to−Ambient Steady State
NDD03N40Z (Note 4)
q
42
96
62
NDD03N40Z−1 (Note 3)
NDT03N40Z (Note 4)
NDT03N40Z (Note 5)
149
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [2 oz] including traces)
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
May, 2014 − Rev. 1
NDD03N40Z/D
NDD03N40Z, NDT03N40Z
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
400
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
Reference to 25°C,
= 1 mA
450
mV/°C
(BR)DSS
I
D
Drain−to−Source Leakage Current
I
V
DS
= 400 V, V = 0 V
T = 25°C
1
mA
mA
DSS
GS
J
T = 125°C
J
50
10
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
I
V
GS
= 20 V
GSS
V
V
DS
= V , I = 50 mA
3.0
3.9
9.8
4.5
3.4
V
GS(TH)
GS
D
Negative Threshold Temperature Co-
efficient
V
/T
J
Reference to 25°C, I = 50 mA
mV/°C
GS(TH)
D
Static Drain-to-Source On Resistance
Forward Transconductance
R
V
V
= 10 V, I = 0.6 A
3.0
1.2
W
DS(on)
GS
D
g
= 15 V, I = 0.6 A
S
FS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 7)
C
140
17
pF
iss
Output Capacitance (Note 7)
C
oss
V
DS
= 50 V, V = 0 V, f = 1 MHz
GS
Reverse Transfer Capacitance
(Note 7)
C
3.0
rss
Effective output capacitance, energy
related (Note 9)
C
10
20
o(er)
V
= 0 V, V = 0 to 320 V
GS
DS
Effective output capacitance, time
related (Note 10)
C
o(tr)
I
D
= constant, V = 0 V,
GS
V
DS
= 0 to 320 V
Total Gate Charge (Note 7)
Q
6.6
1.7
3.5
nC
g
Gate-to-Source Charge (Note 7)
Q
gs
gd
V
DS
= 200 V, I = 2.4 A, V = 10 V
D GS
Gate-to-Drain (“Miller”) Charge
(Note 7)
Q
Plateau Voltage
Gate Resistance
V
6.9
9.0
V
GP
R
W
g
RESISTIVE SWITCHING CHARACTERISTICS (Note 8)
Turn-on Delay Time
Rise Time
t
10
7.0
13
ns
d(on)
t
r
V
V
= 200 V, I = 2.4 A,
D
DD
= 10 V, R = 0 W
GS
G
Turn-off Delay Time
Fall Time
t
d(off)
t
f
5.0
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
V
T = 25°C
0.8
0.7
152
62
1.5
V
SD
J
I
= 0.5 A, V = 0 V
GS
S
T = 100°C
J
Reverse Recovery Time
Charge Time
t
ns
rr
t
a
V
= 0 V, V = 30 V, I = 2.4 A,
DD S
GS
d /d = 100 A/ms
i
t
Discharge Time
t
b
90
Reverse Recovery Charge
Q
452
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
7. Guaranteed by design.
8. Switching characteristics are independent of operating junction temperatures.
9. C
10.C
is a fixed capacitance that gives the same stored energy as C
while V is rising from 0 to 80% V
o(er)
o(tr)
oss DS
(BR)DSS
while V is rising from 0 to 80% V
DS (BR)DSS
is a fixed capacitance that gives the same charging time as C
oss
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2
NDD03N40Z, NDT03N40Z
MARKING DIAGRAMS
4
Drain
4
Drain
Drain
4
AYW
3N40ZG
G
2
1
2
3
Drain
1
3
1
2
3
Gate Source
Gate Drain Source
Gate Drain Source
IPAK
DPAK
SOT−223
A
Y
= Assembly Location
= Year
W, WW = Work Week
3N40Z = Specific Device Code
G or G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
NDD03N40Z−1G
Package
Shipping
IPAK
75 Units / Rail
(Pb−Free, Halogen Free)
NDD03N40ZT4G
NDT03N40ZT1G
NDT03N40ZT3G
DPAK
2500 / Tape & Reel
1000 / Tape & Reel
4000 / Tape & Reel
(Pb−Free, Halogen Free)
SOT−223
(Pb−Free, Halogen Free)
SOT−223
(Pb−Free, Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NDD03N40Z, NDT03N40Z
TYPICAL CHARACTERISTICS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
4.0
V
GS
= 10 V
V
GS
= 8.0 V
3.5
3.0
2.5
2.0
1.5
1.0
V
DS
= 15 V
V
GS
= 7.5 V
T = 25°C
J
V
V
= 7.0 V
= 6.5 V
GS
GS
T = 150°C
J
V
GS
= 6.0 V
V
V
= 5.5 V
= 5.0 V
GS
0.5
0
0.5
0
GS
T = −55°C
J
0
5
10
15
20
25
30
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
3.5
6.0
5.5
5.0
4.5
4.0
3.5
T = 25°C
D
T = 25°C
GS
J
J
V
I
= 0.6 A
= 10 V
3.0
2.5
3.0
2.5
5
6
7
8
9
10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
I , DRAIN CURRENT (A)
4.0 4.5
V
GS
, GATE VOLTAGE (V)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6
1.125
1.100
1.075
1.050
1.025
1.000
0.975
0.950
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
V
= 0.6 A
= 10 V
I
D
= 1 mA
D
GS
0.925
0.900
0.6
0.4
−50 −25
0
25
50
75
100
125 150
−50 −25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Breakdown Voltage Variation with
Temperature
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NDD03N40Z, NDT03N40Z
TYPICAL CHARACTERISTICS
10,000
1.15
1.10
1.05
I
D
= 50 mA
1000
100
T = 150°C
J
1.00
0.95
0.90
0.85
0.80
0.75
T = 125°C
J
T = 100°C
J
10
1
0.70
0.65
−50 −25
0
25
50
75
100
125
150
0
50
100
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
150
200
250 300 350 400
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 7. Threshold Voltage Variation with
Temperature
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
12
11
10
9
1000
100
250
Q
T
V
= 0 V
GS
C
OSS
T = 25°C
J
V
DS
GS
f = 1 MHz
200
150
100
C
ISS
C
RSS
V
GS
8
Q
GD
Q
7
6
5
10
1
4
V
= 200 V
DS
3
T = 25°C
50
0
J
2
I
D
= 2.4 A
1
0
0.1
1
10
100
1000
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 9. Capacitance Variation
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
1
T = 100°C
J
V
= 10 V
= 200 V
= 2.4 A
GS
V
DD
I
D
t
T = 125°C
J
d(off)
t
t
r
f
T = 25°C
J
t
d(on)
10
0.1
T = 150°C
J
0.01
T = −55°C
J
1
0.001
0.1
1
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
, SOURCE−TO−DRAIN VOLTAGE (V)
R , GATE RESISTANCE (W)
V
SD
G
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
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5
NDD03N40Z, NDT03N40Z
TYPICAL CHARACTERISTICS
100
10
1
100
V
≤ 30 V
V
≤ 30 V
GS
GS
Single Pulse
= 25°C
Single Pulse
T = 25°C
C
T
C
10
1
10 ms
10 ms
100 ms
1 ms
100 ms
1 ms
dc
10 ms
0.1
0.1
10 ms
R
Limit
R
Limit
DS(on)
DS(on)
0.01
0.01
Thermal Limit
Package Limit
Thermal Limit
Package Limit
dc
0.001
0.001
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area for NDT03N40Z
Figure 14. Maximum Rated Forward Biased
Safe Operating Area for NDD03N40Z
100
Duty Cycle = 0.5
0.20
0.10
0.05
10
1
R
steady state = 62°C/W
q
JA
0.02
0.01
0.1
Single Pulse
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
t, TIME (s)
1E−01
1E+00
1E+01
1E+02
1E+03
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDT03N40Z
10
1
Duty Cycle = 0.5
0.20
R
steady state = 3.4°C/W
q
JC
0.10
0.05
0.02
0.1
0.01
Single Pulse
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
t, TIME (s)
Figure 16. Thermal Impedance (Junction−to−Case) for NDD03N40Z
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6
NDD03N40Z, NDT03N40Z
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
D
b1
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
4
2
H
E
E
1
3
b
e1
2.00
7.30
10°
0.069
0.276
−
0.078
0.287
10°
e
H
E
q
C
q
STYLE 3:
PIN 1. GATE
2. DRAIN
A
0.08 (0003)
3. SOURCE
4. DRAIN
A1
L
L1
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
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7
NDD03N40Z, NDT03N40Z
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
A
D
E
C
A
b3
B
c2
4
2
L3
L4
Z
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
b2
e
BOTTOM VIEW
BOTTOM VIEW
A
ALTERNATE
SIDE VIEW
CONSTRUCTION
b
b
b2 0.028 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
TOP VIEW
c
0.018 0.024
GAUGE
PLANE
SEATING
PLANE
c2 0.018 0.024
L2
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L
A1
L1
0.020 BSC
DETAIL A
ROTATED 905 CW
L3 0.035 0.050
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
NDD03N40Z, NDT03N40Z
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
G
M
T
PIN 1. GATE
0.13 (0.005)
2. DRAIN
3. SOURCE
4. DRAIN
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