NDF11N50Z [ONSEMI]
N-Channel Power MOSFET 500 V, 0.52 ; N沟道功率MOSFET的500 V, 0.52 ?![NDF11N50Z](http://pdffile.icpdf.com/pdf1/p00132/img/icpdf/NDF11_730157_icpdf.jpg)
型号: | NDF11N50Z |
厂家: | ![]() |
描述: | N-Channel Power MOSFET 500 V, 0.52 |
文件: | 总7页 (文件大小:109K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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NDF11N50Z, NDP11N50Z
N-Channel Power MOSFET
500 V, 0.52 W
Features
• Low ON Resistance
• Low Gate Charge
http://onsemi.com
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
V
R
(MAX) @ 4.5 A
DS(ON)
DSS
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
500 V
0.52 Ω
Rating
Symbol NDF11N50Z NDP11N50Z Unit
Drain−to−Source Voltage
V
500
V
A
DSS
N−Channel
Continuous Drain Current,
R
I
D
10.5 (Note
2)
10.5
6.7
42
D (2)
q
JC
Continuous Drain Current
I
D
6.7 (Note 2)
42 (Note 2)
36
A
A
T = 100°C, R
q
JC
A
Pulsed Drain Current,
@ 10 V
I
DM
V
GS
G (1)
Power Dissipation, R
(Note 1)
P
145
W
q
JC
D
Gate−to−Source Voltage
V
GS
30
V
S (3)
TO−220FP
CASE 221D
STYLE 1
Single Pulse Avalanche
E
AS
190
mJ
MARKING
DIAGRAM
Energy, I = 10.5 A
D
ESD (HBM)
(JESD22−A114)
V
4000
V
V
esd
RMS Isolation Voltage
V
ISO
4500
(t = 0.3 sec., R.H. ≤ 30%,
T = 25°C) (Figure 14)
A
NDF11N50ZG
or
NDP11N50ZG
AYWW
Peak Diode Recovery
dv/dt
4.5 (Note 3)
10.5
V/ns
A
Continuous Source Cur-
rent (Body Diode)
I
S
Gate
Source
Maximum Temperature for
Soldering Leads
T
260
°C
°C
L
TO−220
CASE 221A
STYLE 5
Operating Junction and
T , T
−55 to 150
J
stg
Storage Temperature Range
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
1. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq
[2 oz] including traces).
2. Limited by maximum junction temperature
3. I ≤ 10.5 A, di/dt ≤ 200 A/ms, V ≤ BV
, T ≤ 150°C.
J
d
DD
DSS
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
July, 2010 − Rev. 0
NDF11N50Z/D
NDF11N50Z, NDP11N50Z
THERMAL RESISTANCE
Parameter
Symbol
NDF11N50Z
NDP11N50Z
Unit
Junction−to−Case (Drain)
R
3.4
50
0.9
50
°C/W
q
JC
Junction−to−Ambient Steady State (Note 4)
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I = 1 mA
BV
DSS
500
V
D
Breakdown Voltage Temperature
Coefficient
Reference to 25°C,
= 1 mA
DBV
DT
/
0.6
V/°C
DSS
I
D
J
Drain−to−Source Leakage Current
25°C
I
1
mA
DSS
V
DS
= 500 V, V = 0 V
GS
125°C
50
10
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 5)
V
GS
=
20 V
I
mA
GSS
Static Drain−to−Source
On−Resistance
V
= 10 V, I = 4.5 A
R
DS(on)
0.48
7.7
0.52
4.5
W
GS
D
Gate Threshold Voltage
V
DS
= V , I = 100 mA
V
GS(th)
3.0
V
S
GS
D
Forward Transconductance
V
= 15 V, I = 4.5 A
g
FS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
1375
166
40
pF
nC
iss
V
= 25 V, V = 0 V,
f = 1.0 MHz
DS
GS
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
46
g
gs
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Q
Q
8.7
25
V
DD
= 250 V, I = 10.5 A,
D
V
GS
= 10 V
gd
GP
V
6.2
1.4
V
Gate Resistance
R
W
g
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
15
32
40
23
ns
d(on)
Rise Time
t
r
V
= 250 V, I = 10.5 A,
D
DD
V
= 10 V, R = 5 Ω
GS
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
= 10.5 A, V = 0 V
V
SD
1.6
V
S
GS
t
rr
310
2.5
ns
mC
V
= 0 V, V = 30 V
DD
GS
I
S
= 10.5 A, di/dt = 100 A/ms
Q
rr
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
NDF11N50Z, NDP11N50Z
TYPICAL CHARACTERISTICS
25
20
15
10
5
25
V
DS
= 25 V
V
= 10 V
GS
20
15
10
5
7.0 V
6.5 V
T = 25°C
J
6.0 V
5.5 V
15
T = 150°C
J
T = −55°C
J
5.0 V
10
0
0
0
5
20
25
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
I
= 4.5 A
D
V
= 10 V
GS
J
T = 25°C
J
T = 25°C
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
, GATE−TO−SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10 11
V
GS
I , DRAIN CURRENT (A)
D
Figure 3. On−Region versus Gate−to−Source
Figure 4. On−Resistance versus Drain
Voltage
Current and Gate Voltage
1.15
1.10
1.05
1.00
0.95
0.90
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
I
V
= 4.5 A
D
I
D
= 1 mA
= 10 V
GS
−50
−25
0
25
50
75
100
125
150
50
25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. BVDSS Variation with Temperature
Temperature
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3
NDF11N50Z, NDP11N50Z
TYPICAL CHARACTERISTICS
3250
3000
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
100
10
1
T = 25°C
J
V
GS
= 0 V
C
iss
f = 1 MHz
C
oss
T = 150°C
J
C
rss
T = 125°C
J
0.1
0
50 100 150 200 250 300 350 400 450 500
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
Figure 8. Capacitance Variation
versus Voltage
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
300
250
200
Q
T
V
DS
V
GS
Q
GS
150
100
50
Q
GD
V
DS
= 250 V
= 10.5 A
I
D
T = 25°C
J
0
0
5
10 15 20 25 30 35 40 45 50
Q , TOTAL GATE CHARGE (nC)
Figureg9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
100
10
20
10
V
I
V
= 250 V
= 10.5 A
= 10 V
DD
D
GS
t
d(off)
t
t
r
f
T = 150°C
J
t
d(on)
1
25°C
125°C
−55°C
1
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
, SOURCE−TO−DRAIN VOLTAGE (V)
V
SD
G
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
NDF11N50Z, NDP11N50Z
TYPICAL CHARACTERISTICS
100
10
V
v 30 V
GS
1 ms
100 ms 10 ms
SINGLE PULSE
10 ms
T
C
= 25°C
dc
1
R
LIMIT
DS(on)
0.1
0.01
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF11N50Z
10
1
DUTY CYCLE = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
R
= 3.4°C/W
q
JC
Steady State
SINGLE PULSE
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02 1E+03
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NDF11N50Z, NDP11N50Z
ORDERING INFORMATION
Order Number
Package
Shipping
NDF11N50ZG
TO−220FP
(Pb−Free)
50 Units / Rail
NDP11N50ZG
TO−220AB
(Pb−Free)
50 Units / Rail
(In Development)
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6
NDF11N50Z, NDP11N50Z
PACKAGE DIMENSIONS
TO−220FP
CASE 221D−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T−
PLANE
−B−
C
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2
3
1.00
3.28
G
H
J
0.100 BSC
2.54 BSC
−Y−
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
STYLE 1:
PIN 1. GATE
2. DRAIN
M
M
0.25 (0.010)
B
Y
3. SOURCE
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
Q
Z
2
3
U
H
G
H
J
K
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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NDF11N50Z/D
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