NDS351N [ONSEMI]
N 沟道逻辑电平增强型场效应晶体管，30V，1.1A，250mΩ;
| 型号： | NDS351N |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道逻辑电平增强型场效应晶体管，30V，1.1A，250mΩ 开关 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总8页 (文件大小：456K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NDS351N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel logic level enhancement mode power
field effect transistors are produced using ON
Semiconductor's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
1.1A, 30V. RDS(ON) = 0.25W @ VGS = 4.5V.
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
needed in
package.
a
very small outline surface mount
________________________________________________________________________________
D
S
G
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
NDS351N
Units
Drain-Source Voltage
30
V
V
A
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
- Pulsed
20
± 1.1
(Note 1a)
± 10
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.5
W
PD
0.46
Operating and Storage Temperature Range
-55 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
250
75
°C/W
°C/W
R
JA
JC
q
(Note 1a)
(Note 1)
Thermal Resistance, Junction-to-Case
R
q
Publication Order Number:
NDS351N/D
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 5
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
30
V
Zero Gate Voltage Drain Current
1
µA
µA
nA
nA
10
TJ =125°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 12 V, VDS = 0 V
VGS = -12 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 4.5 V, ID = 1.1 A
0.8
0.5
1.6
1.3
2
V
1.5
TJ =125°C
TJ =125°C
Static Drain-Source On-Resistance
0.185
0.26
0.135
0.25
0.37
0.16
RDS(ON)
W
VGS = 10 V, ID = 1.4 A
VGS = 4.5 V, VDS = 5 V
VDS = 5 V, ID = 1.1 A
On-State Drain Current
5
A
S
ID(ON)
gFS
Forward Transconductance
2.5
DYNAMIC CHARACTERISTICS
Input Capacitance
140
80
pF
pF
pF
Ciss
Coss
Crss
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
18
SWITCHING CHARACTERISTICS (Note 2)
td(on)
tr
td(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
VDD = 10 V, ID = 1 A,
9
15
30
50
40
3.5
1
ns
ns
VGS = 10 V, RGEN = 50 W
16
26
19
2
ns
ns
Qg
Qgs
Qgd
VDS = 10 V, ID = 1.1 A,
VGS = 5 V
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
2
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2
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Min
Typ
Max
Units
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
0.6
5
A
A
V
ISM
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.1 A (Note 2)
0.8
1.2
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T
- T
T - T
J A
J
A
=
=
= I2D (t) ´ RDS (ON )
J
+R (t)
( )
PD t
T
R
(t)
R
qJ
A
q
q
CA
J
C
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250oC/W when mounted on a 0.02 in2 pad of 2oz cpper.
b. 270oC/W when mounted on a 0.001 in2 pad of 2oz cpper.
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
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3
Typical Electrical Characteristics
8
2.5
2
VGS = 10V
6.0
VGS = 3.0V
5.0
4.5
3.5
6
4
2
0
4.0
4.0
1.5
1
3.5
4.5
5.0
6.0
10
3.0
2.5
0.5
0
1
2
3
4
0
2
4
6
8
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
D
DS
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current
1.6
1.4
1.2
1
2.5
2
VGS = 4.5 V
ID = 1.1A
V GS = 4.5V
T = 125°C
J
1.5
1
25°C
0.8
-55°C
0.6
0.5
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
T
, JUNCTION TEMPERATURE (°C)
J
I
, DRAIN CURRENT (A)
D
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 3. On-Resistance Variation
with Temperature
5
4
3
2
1
0
1.2
25
T
= -55°C
J
VDS = 10V
125°C
VDS = V
GS
1.1
1
I D = -250µA
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T
, JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 6. Gate Threshold Variation with
Temperature
Figure 5. Transfer Characteristics
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4
Typical Electrical Characteristics (continued)
1.15
5
I D = 250µA
2
1
V GS = 0V
= 125°C
1.1
1.05
1
0.5
T
0.2
0.1
J
25°C
-55°C
0.01
0.95
0.9
0.001
-50
-25
0
25
50
75
100
125
150
0.3
0.6
0.9
1.2
T
J
, JUNCTION TEMPERATURE (°C)
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
Figure 7. Breakdown Voltage Variation with
Temperature
300
200
10
VDS= 5V
IDS = 1.1A
10V
C
iss
8
100
50
C
oss
6
4
2
0
30
20
f = 1 MHz
VGS = 0V
C
rss
10
0.1
0.2
0.5
1
2
5
10
20 30
0
1
2
3
4
V
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
g
DS
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
ton
toff
VDD
td(off)
r
t
tf
t d(on)
90%
90%
RL
VIN
D
VOUT
Output, V
Input, V
out
10%
90%
10%
VGS
Inverted
RGEN
DUT
G
50%
in
50%
10%
S
Pulse Width
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
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5
Typical Electrical Characteristics (continued)
6
20
10
5
VDS = 5V
T
= -55°C
25°C
J
2
1
4
2
0
0.5
125°C
VGS = 10V
SINGLE PULSE
TA = 25°C
0.1
0.05
0.01
0
2
4
6
8
0.1
0.2
0.5
V
1
2
5
10
30
50
I
, DRAIN CURRENT (A)
D
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 14. Maximum Safe Operating Area
Figure 13. Transconductance Variation with Drain
Current and Temperature
1
D = 0.5
0.5
0.2
0.1
0.2
0.1
R
(t) = r(t) * R
JA
q
JA
q
R
= 250 °C/W
JA
q
0.05
0.05
0.02
0.01
0.02
0.01
P(pk)
t1
t2
Single Pulse
0.005
T
- T = P * R
(t)
J
A
q
JA
0.002
0.001
Duty Cycle, D = t1 /t2
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 15. Transient Thermal Response Curve
Note : Characterization performed using the conditions described in note 1c. Transient thermal response will
change depending on the circuit board design.
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6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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