NDS355AN [ONSEMI]
N 沟道逻辑电平增强型场效应晶体管，30V，1.7A，85mΩ;
| 型号： | NDS355AN |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道逻辑电平增强型场效应晶体管，30V，1.7A，85mΩ 开关 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总8页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NDS355AN
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
General Description
SuperSOTTM-3
N-Channel
logic
level
enhancement
1.7A, 30 V, RDS(ON) = 0.125 W @ VGS = 4.5 V
RDS(ON) = 0.085 W @ VGS = 10 V.
mode power field effect transistors are produced using ON
Semiconductor's proprietary, high cell density, DMOS
technology. This very high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOTTM-3 design for superior
thermal and electrical capabilities.
computers, portable phones, PCMCIA cards, and
other
High density cell design for extremely low RDS(ON)
.
battery powered circuits where fast switching, and low in-
line power loss are needed in a very small outline surface
mount package.
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
_______________________________________________________________________________
D
S
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
NDS355AN
Units
Drain-Source Voltage
Gate-Source Voltage - Continuous
30
V
V
A
±20
Maximum Drain Current - Continuous
- Pulsed
(Note 1a)
1.7
10
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.5
W
0.46
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Rq
Rq
JA
JC
Publication Order Number:
NDS355AN/D
© 1997 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
30
V
Zero Gate Voltage Drain Current
1
µA
µA
nA
nA
10
TJ =125°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 VDS = 0 V
100
-100
VGS = -20 V, VDS = 0 V
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VGS = 4.5 V, ID = 1.7 A
1
1.6
1.2
2
V
0.5
1.5
TJ =125°C
TJ =125°C
Static Drain-Source On-Resistance
0.105 0.125
0.16 0.23
RDS(ON)
W
0.065 0.085
VGS = 10 V, ID = 1.9 A
VGS = 4.5 V, VDS = 5 V
VDS = 5 V, ID= 1.7 A
On-State Drain Current
6
A
S
ID(ON)
gFS
Forward Transconductance
3.5
DYNAMIC CHARACTERISTICS
Input Capacitance
195
135
48
pF
pF
pF
Ciss
Coss
Crss
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
VDD = 10 V, ID = 1 A,
10
13
13
4
20
25
25
10
20
60
20
10
5
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
VGS = 10 V, RGEN = 6 W
VDD = 5 V, ID = 1 A,
10
32
10
5
VGS = 4.5 V, RGEN = 6 W
Qg
Qgs
Qgd
VDS = 10 V, ID = 1.7 A,
VGS = 5 V
3.5
0.8
1.7
Gate-Source Charge
Gate-Drain Charge
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2
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Min
Typ
Max
Units
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
0.42
10
A
A
V
ISM
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =0.42 A (Note 2)
0.8
1.2
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T - T
T - T
J
A
J
A
PD
=
=
= I2D (t) ´ RDS (ON )
J
+R (t)
( )
t
T
R
(t)
A
R
qJ
q
q
CA
J
C
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250oC/W when mounted on a 0.02 in2 pad of 2oz copper.
b. 270oC/W when mounted on a 0.001 in2 pad of 2oz copper.
1b
1a
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
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3
Typical Electrical Characteristics
2
1.8
1.6
1.4
1.2
1
10
V
GS
=10V
7.0
6.0
5.0
4.5
4.0
8
6
4
2
0
VGS= 3.5V
4.0
3.5
4.5
5.0
6.0
0.8
0.6
0.4
7
8
3.0
2
10
0
0.5
1
1.5
2.5
3
0
2
4
6
10
I
, DRAIN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
D
Figure 2. On-Resistance Variation
Figure 1. On-Region Characteristics.
with Drain Current and Gate Voltage.
2
1.8
1.6
1.4
1.2
1
1.6
1.4
1.2
1
ID = 1.6A
VGS = 4.5 V
V
GS
= 4.5V
T = 125°C
J
25°C
-55°C
0.8
0.6
0.4
0.8
0.6
0
1
2
3
4
5
-50
-25
0
T
25
50
75
100
125
150
I
, DRAIN CURRENT (A)
, JUNCTION TEMPERATURE (°C)
D
J
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation
with Temperature.
with Drain Current and Temperature.
1.2
1.1
1
5
VDS = 5.0V
V
= V
GS
= 250µA
DS
4
3
2
1
0
I
D
0.9
0.8
0.7
0.6
T = -55°C
J
25°C
125°C
1
1.5
2
2.5
3
3.5
4
-50
-25
0
T
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
J
GS
Figure 6. Gate Threshold Variation
Figure 5. Transfer Characteristics.
with Temperature.
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4
Typical Electrical Characteristics (continued)
5
1
1.12
ID = 250µA
1.08
VGS = 0V
T = 125°C
J
0.1
0.01
25°C
1.04
1
-55°C
0.001
0.0001
0.96
0.92
-50
-25
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1
1.2
T
, JUNCTION TEMPERATURE (°C)
V
, BODY DIODE FORWARD VOLTAGE (V)
J
SD
Figure 7. Breakdown Voltage Variation with
Figure 8. Body Diode Forward Voltage Variation with
Temperature.
Source Current and Temperature.
10
500
VDS = 5V
ID = 1.6A
10V
300
200
8
C
C
iss
15V
6
100
60
oss
4
2
0
f = 1 MHz
40
VGS = 0V
C
rss
20
0.1
0
2
4
6
8
0.2
0.5
1
2
5
10
20 30
Q
, GATE CHARGE (nC)
V
, DRAIN TO SOURCE VOLTAGE (V)
g
DS
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
ton
toff
td(off)
t d(on)
tr
tf
RL
VIN
90%
90%
D
VOUT
VGS
V
OUT
RGEN
10%
10%
90%
DUT
G
INVERTED
S
V
50%
50%
IN
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
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5
Typical Electrical Characteristics (continued)
30
10
7
VDS = 5.0V
T
= -55°C
25°C
J
6
5
4
3
2
1
0
5
3
125°C
1
0.3
0.1
VGS = 4.5V
SINGLE PULSE
R JA =See Note1b
q
0.03
0.01
T = 25°C
A
0.1
0.2
0.5
1
2
5
10
20 30 50
0
2
4
6
8
10
V
, DRAI N-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 13. Transconductance Variation with Drain
Figure 14. Maximum Safe Operating Area.
Current and Temperature.
2
1
0.8
1.8
0.6
0.4
0.2
0
1a
1.6
1a
1b
4.5"x5" FR-4 Board
= 25 o
1b
1.4
1.2
T
A
C
Still Air
GS = 4.5V
4.5"x5" FR-4 Board
TA = 25o
Still Air
C
V
0
0.1
0.2
0.3
0.4
0
0.1
0.2
0.3
0.4
2
2oz COPPER MOUNTING PAD AREA (in
)
2oz COPPER MOUNTING PAD AREA (in
)
2
Figue 15. SuperSOTTM _ 3 Maximum
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
Steady-State Power Dissipation versus Copper
Mounting Pad Area.
1
D = 0.5
0.5
R
R
(t) = r(t) * R
JA
q
JA
q
0.2
0.1
0.2
0.1
=
See Note 1b
qJA
0.05
0.05
P(pk)
0.02
0.01
0.02
0.01
t
1
t
2
Single Pulse
T - T = P * R
(t)
JA
q
J
A
0.005
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
1
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
change depending on the circuit board design.
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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❖
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