NDS8434 [ONSEMI]
单路 P 沟道增强型场效应晶体管 -20V，-6.5A，35mΩ;
| 型号： | NDS8434 |
| 厂家： | 
ONSEMI |
| 描述： | 单路 P 沟道增强型场效应晶体管 -20V，-6.5A，35mΩ PC 开关 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总8页 (文件大小：574K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NDS8434
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize on-
state resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
-6.5A, -20V. RDS(ON) = 0.035W @ VGS = -4.5V
RDS(ON) = 0.05W @ VGS = -2.7V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
NDS8434
-20
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
V
V
A
VDSS
VGSS
ID
-8
(Note 1a)
-6.5
-20
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
2.5
W
1.2
1
(Note 1c)
Operating and Storage Temperature Range
-55 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
R
JA
q
R
JC
q
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 12017, Rev. 1
Publication Order Number:
NDS8434/D
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
VDS = -16 V, VGS = 0 V
-20
V
Zero Gate Voltage Drain Current
-1
µA
µA
nA
nA
TJ = 55oC
-10
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
100
-100
IGSSF
IGSSR
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS= 0 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
-0.4
-0.3
-0.7
-1
V
VGS(th)
VDS = VGS, ID = -250 µA
VGS = -4.5 V, ID = -6.5 A
TJ = 125oC
TJ = 125oC
-0.45
-0.8
Static Drain-Source On-Resistance
0.026 0.035
RDS(ON)
W
0.037
0.036
0.07
0.05
VGS = -2.7 V, ID = -5.5 A
VGS = -4.5 V, VDS = -5 V
VGS = -2.7 V, VDS = -5 V
VDS = -10 V, ID = -6.5 A
On-State Drain Current
-15
-10
A
S
ID(on)
Forward Transconductance
18
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
2330
1070
360
pF
pF
pF
Ciss
Coss
Crss
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
VDD = -6 V, ID = -1 A,
20
38
40
80
ns
ns
VGEN = -4.5 V, RGEN = 6 W
169
63
300
120
80
ns
ns
Qg
Qgs
Qgd
VDS = -5 V,
ID = -6.5 A, VGS = -4.5 V
40
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
5.3
11
www.onsemi.com
2
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Min
Typ
Max
Units
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
-2.1
-1.2
A
V
IS
-0.8
VSD
Notes:
VGS = 0 V, IS = -2.1 A (Note 2)
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
T
- T
T - T
J A
J
A
= I2D (t) ´ RDS(ON )
J
( )
PD t =
=
T
R
(t)
R
+R (t)
q
CA
qJ
A
q
J
C
Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50oC/W when mounted on a 1 in2 pad of 2oz copper.
b. 105oC/W when mounted on a 0.04 in2 pad of 2oz copper.
c. 125oC/W when mounted on a 0.006 in2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
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3
Typical Electrical Characteristics
-25
2.5
2
VGS = -4.5V
-3.0
VGS = -2.0V
-20
-2.7
-2.5
-15
-2.0
-2.5
1.5
1
-2.7
-3.0
-10
-5
-3.5
-4.5
-1.5
0
0.5
0
-0.5
-1
-1.5
-2
-2.5
-3
0
-5
-10
-15
-20
-25
-25
150
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
1.4
1.2
1
2
ID = -6.5A
VGS = -4.5V
V GS = -4.5V
T
= 125°C
J
1.5
25°C
1
-55°C
0.8
0.6
0.5
-50
-25
0
25
50
75
100
125
150
0
-5
-10
-15
-20
T
, JUNCTION TEMPERATURE (°C)
I
, DRAIN CURRENT (A)
D
J
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
-25
1.4
1.2
1
VDS = -5.0V
T
= -55°C
J
VDS = VGS
125°C
25°C
I D = -250µA
-20
-15
-10
-5
0.8
0.6
0.4
0
0
-0.5
-1
-1.5
-2
-2.5
-3
-50
-25
0
25
T , JUNCTION TEMPERATURE (°C)
J
50
75
100
125
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 6. Gate Threshold Variation
with Temperature.
Figure 5. Transfer Characteristics.
www.onsemi.com
4
Typical Electrical Characteristics (continued)
1.08
25
10
I D = -250µA
V GS = 0V
1.06
1.04
1.02
1
T
= 125°C
J
25°C
1
0.1
-55°C
0.01
0.98
0.96
0.94
0.001
0.0001
-50
-25
0
25
50
75
100
125
150
0
0.2
-V
0.4
0.6
0.8
1
1.2
T
, JUNCTION TEMPERATURE (°C)
, BODY DIODE FORWARD VOLTAGE (V)
SD
J
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
5
5500
4000
I D = -6.5A
VDS = -5.0V
-15V
C
4
3
2
1
0
iss
C
2000
-10V
oss
1000
800
500
f = 1 MHz
VGS = 0V
C
rss
300
200
0.1
0.2
0.5
1
2
5
10
20
0
10
20
30
40
50
Q
, GATE CHARGE (nC)
-V
, DRAIN TO SOURCE VOLTAGE (V)
g
DS
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
ton
toff
-VDD
td(off)
td(on)
tf
tr
RL
90%
VIN
90%
D
VOUT
V
OUT
VGS
10%
10%
90%
RGEN
DUT
G
V
50%
50%
IN
S
10%
INVERTED
PULSE W IDTH
Figure 12. Switching Waveforms.
Figure 11. Switching Test Circuit.
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5
Typical Electrical and Thermal Characteristics (continued)
40
32
24
16
8
2.5
2
VDS = -5.0V
1a
T
= -55°C
25°C
J
1.5
1
125°C
1b
1c
4.5"x5" FR-4 Board
TA
25o
Still Air
=
C
0
0.5
0
-4
-8
-12
-16
-20
0
0.2
0.4
0.6
0.8
1
2
I
, DRAIN CURRENT (A)
2oz COPPER MOUNTING PAD AREA (in
)
D
Figure 14. SO-8 Maximum Steady-State Power
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Dissipation versus Copper Mounting Pad Area.
8
7
6
50
30
10
1a
3
1
0.3
0.1
VGS = -4.5V
1b
5
4.5"x5" FR-4 Board
TA
25o
Still Air
SINGLE PULSE
1c
=
C
R
JA = See Note 1c
T A = 25°C
0.03
0.01
q
VGS
=
-4.5V
4
0
0.2
0.4
0.6
0.8
1
0.1
0.2
0.5
- V
1
2
5
10
20
50
2
)
2oz COPPER MOUNTING PAD AREA (in
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 16. Maximum Safe Operating Area.
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
1
D = 0.5
0.2
0.5
0.2
0.1
R
(t) = r(t) * R
JA
q
JA
q
R
= See Note 1c
0.1
0.05
JA
q
0.05
P(pk)
0.02
0.01
Single Pulse
0.02
0.01
t
1
t
2
0.005
T
- T
= P * R
(t)
2
J
JA
A
q
Duty Cycle, D = t / t
1
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t1, TIME (sec)
Figure 17. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
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Email: orderlit@onsemi.com
For additional information, please contact your local
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© Semiconductor Components Industries, LLC
www.onsemi.com
❖
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