NDS9948 [ONSEMI]
双 P 沟道,PowerTrench® MOSFET,60V,-2.3A,250mΩ;型号: | NDS9948 |
厂家: | ONSEMI |
描述: | 双 P 沟道,PowerTrench® MOSFET,60V,-2.3A,250mΩ PC 开关 脉冲 光电二极管 晶体管 |
文件: | 总7页 (文件大小:266K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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NDS9948
Dual 60V P-Channel PowerTrench MOSFET
Features
General Description
This P-Channel MOSFET is a rugged gate version of
• –2.3 A, –60 V
RDS(ON) = 250 mΩ @ VGS = –10 V
RDS(ON) = 500 mΩ @ VGS = –4.5 V
ON Semiconductor’s
advanced
PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
• Low gate charge (9nC typical)
• Fast switching speed
Applications
• High performance trench technology for extremely
•
•
•
Power management
Load switch
low RDS(ON)
Battery protection
• High power and current handling capability
D1
5
6
7
8
4
3
2
1
D1
D2
Q1
Q2
D2
G1
SO-8
S1
G2
S2
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
–60
V
V
A
VGSS
Gate-Source Voltage
±20
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
–2.3
–10
PD
W
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1.0
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1c)
78
135
40
RθJA
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
NDS9948
NDS9948
13’’
12mm
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
NDS9948/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
IAR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD=–54 V
15
mJ
A
–10
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–60
V
VGS = 0 V,
ID = –250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
–52
ID = –250 µA, Referenced to25°C
mV/°C
VDS = –40 V,
VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
–2
µA
–25
VDS = –40 V,VGS = 0 V TJ =–55°C
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 20 V,
VGS = –20 V
VDS = 0 V
VDS = 0 V
100
nA
nA
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–1
–1.5
4
–3
V
VDS = VGS
,
ID = –250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V,
VGS = –4.5 V, ID = –1.6 A
GS = –10 V,ID = –2.3A, TJ =125°C
ID = –2.3 A
138
175
225
250
500
433
mΩ
V
ID(on)
gFS
On–State Drain Current
VGS = –10 V,
VDS = –10 V,
VDS = –5 V
ID = –2.3 A
–10
A
S
Forward Transconductance
5
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
394
53
pF
pF
pF
VDS = –30 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
23
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
9
12
18
29
6
ns
ns
V
DD = –30 V,
ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
16
3
ns
ns
Qg
Qgs
Qgd
9
13
nC
nC
nC
V
V
DS = –30 V,
GS = –10 V
ID = –2.3 A,
1.4
1.7
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2
Electrical Characteristics (cont.)TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions
Drain–Source Diode Characteristics and Maximum Ratings
Min Typ Max Units
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.7
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –1.7 A(Note 2)
IF = –2.3A,
–0.8
25
VGS = 0 V,
trr
Reverse Recovery Time
nS
dIF/dt = 100A/µs
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
`
a)
78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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3
Typical Characteristics
10
1.8
1.6
1.4
1.2
1
VGS = -10V
-4.5V
-6.0V
-4.0V
8
6
4
2
0
VGS=-3.5V
-3.5V
-4.0V
-4.5V
-3.0V
-6.0V
-10V
0.8
0
1
2
3
4
5
6
175
4
0
2
4
6
8
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.5
2
ID = -1A
ID = -2.3A
GS = -10V
0.45
1.8
1.6
1.4
1.2
1
V
0.4
0.35
TA = 125oC
0.3
0.25
0.8
0.6
0.4
0.2
TA = 25oC
0.15
0.1
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
6
5
4
3
2
1
0
VDS = -5V
25oC
TA = -55oC
VGS =0V
10
125oC
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1
1.5
2
2.5
3
3.5
0
0.2
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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4
Typical Characteristics
10
600
500
400
300
200
100
0
f = 1 MHz
GS = 0 V
ID = -2.3A
V
VDS = -20V
-30V
8
6
4
2
0
CISS
-40V
COSS
CRSS
0
2
4
6
8
10
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
RθJA = 135°C/W
T
A = 25°C
100µ
1ms
RDS(ON) LIMIT
10ms
100ms
1s
1
VGS = -10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
10s
DC
0.1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θJA(t) = r(t) * RθJA
θJA = 135oC/W
0.2
R
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
SINGLE PULSE
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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