NDSH25170A [ONSEMI]
碳化硅（SiC）肖特基二极管 - EliteSiC系列，25A，1700V，D1，TO-247-2L;
| 型号： | NDSH25170A |
| 厂家： | 
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DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
25 A, 1700 V, D1, TO-247-2L
1. Cathode
2. Anode
Schottky Diode
NDSH25170A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
TO−247−2LD
CASE 340DA
MARKING DIAGRAM
Features
Max Junction Temperature 175C
Avalanche Rated 506 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
NDSH
25170A
AYWWZZ
No Reverse Recovery / No Forward Recovery
These Devices are Halogen Free/BFR Free and are RoHS Compliant
Applications
NDSH25170A
A
YWW
ZZ
= Specific Device Code
= Assembly Plant Code
= Numeric Date Code
= Lot Code
SMPS, Solar Inverter, UPS
Power Switching Circuits
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2023 − Rev. 3
NDSH25170A/D
NDSH25170A
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Value
1700
506
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
E
AS
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 153C
mJ
A
I
F
25
C
Continuous Rectified Forward Current @ T < 135C
35
C
I
Non-Repetitive Peak Forward Surge Current
1435
1428
220
A
A
T
T
= 25C, 10 ms
= 150C, 10 ms
F, Max
C
C
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
66
A
F,RM
p
Ptot
T
= 25C
385
W
W
C
C
C
T
= 150C
64
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 506 mJ is based on starting T = 25C, L = 0.5 mH, I = 45 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
0.39
C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Forward Voltage
Test Condition
I = 25 A, T = 25C
Min
−
Typ
1.50
1.95
2.32
0.08
0.58
4.24
169
Max
1.75
2.35
2.8
40
60
100
−
Unit
V
F
V
F
J
I = 25 A, T = 125C
−
F
J
I = 25 A, T = 175C
−
F
J
I
R
Reverse Current
V
R
V
R
V
R
= 1700 V, T = 25C
−
mA
J
= 1700 V, T = 125C
−
J
= 1700 V, T = 175C
−
J
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
2025
155
−
−
−
−
109
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
NDSH25170A
NDSH25170A
TO−247−2LD
(Pb-Free / Halogen Free)
30 Units / Tube
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2
NDSH25170A
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
10−4
50
45
40
35
30
25
20
15
10
5
TJ = −55oC
T
J = 25 o
C
10−5
10−6
10−7
10−8
10−9
TJ = 75 o
C
T
J = 125 o
C
TJ = 175 oC
TJ = 175 o
C
T
J = 125 o
C
TJ = 75 o
C
T
J = 25 oC
TJ = −55oC
1600 2000
0
0
1
2
3
4
5
0
400
800
1200
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
400
350
300
250
200
150
100
50
300
250
200
150
100
50
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
0
25
0
25
50
75
100
125
150
175
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
C, CASE TEMPERATURE (oC)
T
Figure 3. Current Derating
Figure 4. Power Derating
180
150
120
90
5000
1000
60
30
100
50
0
0
100 200 300 400 500 600 700 800
VR, REVERSE VOLTAGE (V)
0.1
1
10
100
800
VR, REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
NDSH25170A
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
J
50
40
30
20
10
0
0
100 200 300 400 500 600 700 800
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
PDM
0.1
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
t1
t2
NOTES:
0.01
Z
(t) = r(t) x R
o
qJC
qJC
R
= 0.39 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
SINGLE PULSE
0.001
10−6
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction-to-Case Transient Thermal Response Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340DA
ISSUE A
DATE 27 FEB 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXXX = Specific Device Code
A
= Assembly Location
= Year
Y
WW
ZZ
= Work Week
= Assembly Lot Code
*This information is generic. Please refer to de-
vice data sheet for actual part marking. Pb−
Free indicator, “G” or microdot “ G”, may or
may not be present. Some products may not
follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON00714H
TO−247−2LD
PAGE 1 OF 1
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