NDT2955 [ONSEMI]
P 沟道增强型场效应晶体管，-60V，-2.5A，300mΩ;
| 型号： | NDT2955 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道增强型场效应晶体管，-60V，-2.5A，300mΩ PC 开关 脉冲 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总5页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
P-Channel Enhancement
D
Mode Field Effect Transistor
S
D
NDT2955
G
General Description
SOT−223
CASE 318H−01
This 60 V P−Channel MOSFET is produced using onsemi’s high
voltage Trench process. It has been optimized for power management
plications.
MARKING DIAGRAM
Features
• −2.5 A, −60 V
AYW
2955G
G
♦ R
♦ R
= 300 mW @ V = −10 V
GS
DS(ON)
= 500 mW @ V = −4.5 V
DS(ON)
GS
• High Density Cell Design for Extremely Low R
• High Power and Current Handling Capability in a Widely Used
Surface Mount Package
• This is a Pb−Free Device
.
DS(ON)
1
A
Y
W
2955
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
Applications
• DC/DC Converter
• Power Management
(Note: Microdot may be in either location)
PINOUT DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Drain−Source Voltage
Value
−60
20
Unit
V
D
V
DSS
GSS
V
Gate−Source Voltage
V
I
D
Drain Current
A
− Continuous (Note 1a)
−2.5
−15
− Pulsed
D
S
G
P
D
Maximum Power Dissipation
(Note 1a)
W
3.0
1.3
1.1
(Note 1b)
(Note 1c)
ORDERING INFORMATION
†
Device
NDT2955
Shipping
Package
T ,
STG
Operating and Storage Temperature Range
−55 to
°C
J
T
+150
4000 / Tape & Reel
SOT−223
(Pb−Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Max
Unit
R
Thermal Resistance,
Junction−to−Ambient (Note 1a)
42
°C/W
q
JA
R
Thermal Resistance,
Junction−to−Case (Note 1)
12
°C/W
q
JC
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
September, 2022 − Rev. 2
NDT2955/D
NDT2955
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
AVALANCHE RATINGS
W
DSS
Drain−Source Avalanche Energy
Single Pulse, V = 30 V, I = 2.5 A
−
−
174
mJ
DD
D
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = −250 mA
−60
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= −250 mA, Referenced to 25°C
−
−60
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate−Body Leakage, Forward
Gate−Body Leakage, Reverse
V
DS
V
GS
V
GS
= −60 V, V = 0 V
−
−
−
−
−
−
−10
100
mA
nA
nA
DSS
GS
I
= −20 V, V = 0 V
DS
GSSF
GSSR
I
= −20 V, V = 0 V
−100
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = −250 mA
−2
−2.6
−4
V
GS(th)
DS
GS D
Gate Threshold Voltage Temperature
Coefficient
= −250 mA, Referenced to 25°C
−
5.7
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −2.5 A
−
−
95
163
153
−
300
500
513
−
mW
DS(ON)
D
= −4.5 V, I = −2 A
D
= −10 V, I = −2.5 A, T = 125°C
−
D
J
I
On−State Drain Current
= −10 V, V = −5 V
−12
−
A
S
D(ON)
DS
g
FS
Forward Transconductance
= −10 V, I = −2.5 A
5.5
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −30 V, V = 0 V, f = 1.0 MHz
−
−
−
601
85
−
−
−
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
35
SWITCHING CHARACTERISTICS (Note 2)
t
Turn − On Delay Time
Turn − On Rise Time
Turn − Off Delay Time
Turn − Off Fall Time
Total Gate Charge
V
V
= −30 V, I = −1 A,
−
−
−
−
−
−
−
12
10
19
6
21
20
34
12
15
−
ns
ns
d(on)
DD
GS
D
= −10 V, R
= 6 W
GEN
t
r
t
ns
d(off)
t
f
ns
Q
g
V
DS
= −30 V, I = −2.5 A, V = −10 V
11
2.4
2.7
nC
nC
nC
D
GS
Q
Gate−Source Charge
Gate−Drain Charge
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
I
S
−
−
−
−
−
−0.8
25
−2.5
−1.2
−
A
V
V
SD
Drain−Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V = 0 V, I = −2.5 A (Note 2)
GS S
t
I = −2.5 A,
ns
nC
rr
F
d /d = 100 A/ms
iF
t
Q
40
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
c. 110°C/W when
mounted on a minimum
pad.
a. 42°C/W when
mounted on a 1 in
pad of 2 oz copper.
b. 95°C/W when
mounted on a 0.066 in
pad of 2 oz copper.
2
2
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
www.onsemi.com
2
NDT2955
TYPICAL CHARACTERISTICS
2
12
9
V
= −10 V
V
GS
= −4.5 V
GS
−6.0 V
1.8
1.6
1.4
−7.0 V
−5.0 V
−5.0 V
6
−4.5 V
−6.0 V
−7.0 V
1.2
1
−8.0 V
3
0
−10.0 V
−4.0 V
0.8
0
1
2
3
4
5
0
3
6
9
12
−I , DRAIN CURRENT (A)
D
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.8
1.6
0.35
0.3
I
D
= −1.3 A
I
V
= −2.5 A
D
= −10 V
GS
1.4
1.2
0.25
0.2
T = 125°C
A
1
0.8
0.6
0.4
0.15
0.1
T = 25°C
A
0.05
−50 −25
0
25
50
75
100 125
150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
10
1
10
8
V
GS
= 0 V
V
DS
= −10 V
T = −55°C
A
25°C
125°C
T = 125°C
A
25°C
0.1
6
4
2
0
−55°C
0.01
0.001
0.0001
2.5
3.5
4.5
5.5
0
0.2
0.4
0.6
0.8
1
1.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223
CASE 318H
ISSUE B
DATE 13 MAY 2020
SCALE 2:1
A
Y
W
= Assembly Location
= Year
= Work Week
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
AYW
XXXXXG
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASH70634A
SOT−223
PAGE 1 OF 1
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