NDT3055L [ONSEMI]

N 沟道逻辑电平增强型场效应晶体管，60V，4A，100mΩ;


型号：	NDT3055L
厂家：	ONSEMI
描述：	N 沟道逻辑电平增强型场效应晶体管，60V，4A，100mΩ 晶体管场效应晶体管
文件：	总6页 (文件大小：197K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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Transistor - N-Channel,

Logic Level, Enhancement

Mode Field Effect

NDT3055L

SOT−223

CASE 318H−01

General Description

This Logic Level N−Channel enhancement mode power field effect

transistor is produced using onsemi’s proprietary, high cell density,

DMOS technology. This very high density process is especially

tailored to minimize on−state resistance and provide superior

switching performance, and withstand high energy pulse in the

avalanche and commutation modes. This device is particularly suited

for low voltage applications such as DC motor control and DC/DC

conversion where fast switching, low in−line power loss, and

resistance to transients are needed.

MARKING DIAGRAM

AYW

3055LG

= Assembly Location

= Year

= Work Week

= Specific Device Code

= Pb−Free Package

Features

3055L

• 4 A, 60 V

♦ R

= 0.100 W @ V = 10 V

DS(ON)

= 0.120 W @ V = 4.5 V

DS(ON)

(Note: Microdot may be in either location)

• Low Drive Requirements Allowing Operation Directly from Logic

Drivers. V < 2V.

GS(TH)

PINOUT DIAGRAM

• High Density Cell Design for Extremely Low R

DS(ON)

• High Power and Current Handling Capability in a Widely Used

Surface Mount Package.

• This is a Pb−Free Device

ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Drain−Source Voltage

Value

Unit

DSS

GSS

Gate−Source Voltage − Continuous

Maximum Drain Current

ORDERING INFORMATION

− Continuous (Note 1a)

†

− Pulsed

Maximum Power Dissipation (Note 1a)

(Note 1b)

Device

NDT3055L

Shipping

Package

4000 / Tape & Reel

SOT−223

(Pb−Free)

1.3

1.1

(Note 1c)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

T ,

Operating and Storage Temperature Range −65 to 150

°C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Max

Unit

Thermal Resistance,

Junction−to−Ambient (Note 1a)

°C/W

Thermal Resistance,

Junction−to−Case (Note 1)

°C/W

Publication Order Number:

July, 2022 − Rev. 2

NDT3055L/D

NDT3055L

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

= 0 V, I = 250 mA

−

mV/°C

DSS

DBV

/DT Breakdown Voltage Temp. Coefficient

= 250 mA, Referenced to 25°C

DSS

Zero Gate Voltage Drain Current

= 60 V, V = 0 V

−

DSS

= 60 V, V = 0 V, T = 125°C

−

Gate − Body Leakage, Forward

Gate − Body Leakage, Reverse

= 20 V, V = 0 V

−

100

−100

GSSF

= −20 V, V = 0 V

−

GSSR

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

/DT Gate Threshold Voltage Temp. Coefficient

= V , I = 250 mA

−

1.6

−4

−

mV/°C

GS(th)

GS D

= 250 mA, Referenced to 25°C

GS(th)

DS(ON)

Static Drain−Source On−Resistance

= 10 V, I = 4.0 A

−

0.07

0.125

0.103

−

0.1

0.18

0.12

−

= 10 V, I = 4.0 A, T = 125°C

−

= 4.5 V, I = 3.7 A

−

On−State Drain Current

= 5 V, V = 10 V

−

D(ON)

Forward Transconductance

= 5 V, I = 4 A

−

DYNAMIC CHARACTERISTICS

Input Capacitance

= 25 V, V = 0 V, f = 1.0 MHz

−

345

110

−

iss

oss

Output Capacitance

rss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

Turn − On Delay Time

Turn − On Rise Time

Turn − Off Delay Time

Turn − Off Fall Time

Total Gate Charge

= 25 V, I = 1 A, V = 10 V,

GEN

−

D(on)

= 6 W

7.5

D(off)

= 40 V, I = 4 A, V = 10 V

1.7

3.2

Gate−Source Charge

Gate−Drain Charge

−

DRAIN−SOURCE DIODE CHARACTERISTICS

Maximum Continuous Drain−Source Diode Forward Current

Drain−Source Diode Forward Voltage = 0 V, I = 2.5 A (Note 2)

−

2.5

1.2

0.8

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design.

a. 42°C/W when

b. 95°C/W when

mounted on a 0.066 in

pad of 2 oz copper.

c. 110°C/W when

mounted on a 1 in

mounted on a 0.00123

pad of 2 oz copper.

in pad of 2 oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

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NDT3055L

TYPICAL ELECTRICAL CHARACTERISTICS

= 10 V

= 4.0 V

6.0 V

5.0 V

1.8

1.6

1.4

1.2

4.5 V

4.0 V

5.0 V

6.0 V

8.0 V

3.5 V

3.0 V

10.0 V

0.8

, DRAIN−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 1. On−Region Characteristics

Figure 2. On−Resistance Variation with

Drain Current and Gate Voltage

1.8

1.6

1.4

1.2

0.28

= 4.0 A

= 10 V

= 2 A

0.24

0.2

0.16

0.12

0.08

0.04

T = 125°C

T = 25°C

0.8

0.6

−50 −25

75 100 125 150

T , JUNCTION TEMPERATURE (°C)

, GATE TO SOURCE VOLTAGE (V)

Figure 3. On−Resistance Variation with

Figure 4. On−Resistance Variation with

Gate−to−Source Voltage

Temperature

= 5 V

= 0 V

T = −55°C

25°C

125°C

T = 125°C

25°C

0.1

0.01

−55°C

0.001

0.0001

1.5

2.5

3.5

4.5

0.2

0.4

0.6

0.8

1.2

1.4

, GATE TO SOURCE VOLTAGE (V)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage

Variation with Current and Temperature

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NDT3055L

TYPICAL ELECTRICAL CHARACTERISTICS (continued)

1000

500

= 4 A

iss

30 V

= 10 V

200

100

C_oss

40 V

C_rss

f = 1 MHz

= 0 V

0.1

0.3

30 60

Q , GATE CHARGE (nC)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

SINGLE PULSE

= 110°C/W

T = 25°C

LIMIT

DS(ON)

100 ms

1 ms

10 ms

100 ms

1 s

10 s

0.3

0.1

= 10 V

SINGLE PULSE

= 110°C/W

0.03

0.01

T = 25°C

0.1 0.2

0.5

30 60 100

0.001

0.01

0.1

100 300

, DRAIN−SOURCE VOLTAGE (V)

SINGLE PULSE TIME (s)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum Power

Dissipation

0.5

D = 0.5

0.2

(t) = r(t) x R

= 110°C/W

0.1

0.05

0.02

0.1

0.05

P(pk)

0.02

0.01

t₁

t₂

Single Pulse

0.005

T − T = P x R (t)

0.002

0.001

Duty Cycle, D = t / t

1 2

0.0001

0.001

0.01

0.1

t , TIME (s)

100

300

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−223

CASE 318H

ISSUE B

DATE 13 MAY 2020

SCALE 2:1

= Assembly Location

= Year

= Work Week

GENERIC

MARKING DIAGRAM*

XXXXX = Specific Device Code

= Pb−Free Package

(Note: Microdot may be in either location)

AYW

XXXXXG

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASH70634A

SOT−223

PAGE 1 OF 1

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TECHNICAL PUBLICATIONS:

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For additional information, please contact your local Sales Representative at

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

NDT3055L [ONSEMI]

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