NGTB10N60R2DT4G [ONSEMI]
IGBT, 600V, 10A, N-Channel;
| 型号： | NGTB10N60R2DT4G |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 600V, 10A, N-Channel 双极性晶体管 |
| 文件： | 总8页 (文件大小：665K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB10N60R2DT4G
IGBT
www.onsemi.cn
600V, 10A, N-Channel
主要特长
反向导通II IGBT
电气连接
N-Channel
2,4
IGBT V (sat)=1.7V (typ) [I =10A, V =15V]
CE GE
C
IGBT t =65ns (typ)
f
Diode V =1.5V (typ) [I =10A]
F
F
Diode t =90ns (typ)
rr
5s 抗短路能力
1
1:Gate
2:Collector
3:Emitter
4:Collector
应用
3
通用变频器(General Purpose Inverter)
4
规格
绝对最大额定值 / Ta = 25C (除非特殊指定)
DPAK
CASE 369C
2
1
3
参数
记号
值
单位
V
集电极-发射极电压(Collector to Emitter Voltage)
栅极-发射极电压(Gate to Emitter Voltage)
V
V
600
20
20
CES
V
GES
印刷图
@Tc=25C *2
@Tc=100C *2
A
集电极电流(DC)
受限于Tjmax
1
I
C *
A
10
集电极电流(峰值)
A
A
I
I
40
10
CP
O
受限于Tjmax 的脉冲
二极管平均输出电流
(Diode Average Output Current)
功耗(Power Dissipation)
P
D
72
W
2
Tc=25C
(我司理想的散热条件) *
Tj
175
C
C
结温(Junction Temperature)
Tstg
55 to +175
储存温度(Storage Temperature)
注: *1 集电极电流由下式计算:
Tjmax - Tc
(j-c)×V (sat) (I (Tc))
th CE
I (Tc)=
C
R
C
*2 我司的条件为背面散热。
方法为:器件的背面涂上硅脂, 然后将该器件贴在铝制的水冷散热器上。
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
September 2015 - Rev. 2
1
Publication Order Number :
NGTB10N60R2DT4GCN/D
NGTB10N60R2DT4G
电气特性/ Ta=25C (除非特殊指定)
值
参数
记号
条件
单位
min
600
typ
max
集电极-发射极击穿电压
V(
)
I
=1mA, V =0V
C GE
V
BR CES
(Collector to Emitter Breakdown Voltage)
Tc=25C
10
A
集电极-发射极截止电流
I
I
V
=600V, V =0V
GE
CES
CE
(Collector to Emitter Cutoff Current)
Tc=150C
1
mA
栅极-发射极漏电流
V
V
=20V, V =0V
CE
100
nA
V
GES
GE
(Gate to Emitter Leakage Current)
栅极-发射极阈值电压
V
(th)
GE
=20V, I =160A
4.5
7.0
CE
C
(Gate to Emitter threshold voltage)
Tc=25C
1.7
2.1
2.3
2.1
V
V
集电极-发射极饱和电压
V
V
(
)
V
=15V, I =10A
CE sat
GE C
(Collector to Emitter Saturated Voltage)
Tc=100C
1.9
1.5
正向二极管电压(Forward Diode Voltage)
输入电容(Input Capacitance)
I =10A
F
V
F
Cies
1340
45
pF
pF
输出电容(Output Capacitance)
Coes
V
CE
=20V, f=1MHz
反向传输电容
Cres
33
pF
(Reverse Transfer Capacitance)
开启迟延时间(Turn-on delay time)
t (on)
d
48
34
ns
ns
ns
ns
ns
ns
J
J
nC
nC
上升时间(Rise Time)
t
r
V
CC
=300V, I =10A
C
=30, L=500H
开启时间(Turn-ON Time)
ton
188
120
65
R
V
G
关断迟延时间(Turn-OFF Delay Time)
下降时间(Fall Time)
t (off)
d
=0V/15V
GE
Vclamp=400V
t
f
Tc=25C
关断时间(Turn-OFF Time)
开启能量(Turn-ON Energy)
关断能量(Turn-OFF Energy)
总栅极电荷(Total Gate Charge)
栅极-发射极电荷(Gate to Emitter charge)
toff
220
412
140
53
See Fig.1, See Fig.2
Eon
Eoff
Qg
Qge
10
V
=300V, V =15V, I =10A
CE GE
C
栅极-集电极米勒电荷
Qgc
25
90
nC
ns
(Gate to Collector “Miller” Charge)
二极管反向恢复时间
t
I =10A,di/dt=300A/s, V =300V, See Fig.3
CC
rr
F
(Diode Reverse Recovery Time)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
热特性/ Ta=25C (除非特殊指定)
参数
记号
条件
值
单位
热阻IGBT(结到外壳
Thermal Resistance IGBT (Junction to Case)
热阻 结到环境
)
Tc=25C
(我司的理想散热条件) *2
Rth(j-c) (IGBT)
Rth(j-a)
2.07
100
C/W
C/W
(
)
Thermal Resistance (Junction to Ambient)
注: *2 我司的条件为背面散热。
方法为:器件的背面涂上硅脂, 然后将该器件贴在铝制的水冷散热器上。
www.onsemi.cn
2
NGTB10N60R2DT4G
www.onsemi.cn
3
NGTB10N60R2DT4G
www.onsemi.cn
4
NGTB10N60R2DT4G
www.onsemi.cn
5
NGTB10N60R2DT4G
t
rr
-- I
F
300
250
200
150
100
Tc=25
°C
50
0
V
=300V
CC
di/dt=300A/μs
0
5
10
15
20
25
30
35
40
45
Forward Current, I -- A
F
R (j-c) -- Pulse Time
th
10
7
5
3
2
Duty Cycle=0.5
1.0
7
5
3
2
0.2
0.1
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.000001
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Time, PT -- s
图1: 开关时间测试电路
图2: 时间图
V
GE
Diode
90%
10%
0
200H
DUT
NGTB10N60R2DT4G
I
C
90%
90%
V
CC
R
G
10%
10%
10%
10%
V
CE
0
t
f
t
r
t (off)
d
t (on)
d
t
t
on
off
E
on
E
off
图3:反向恢复时间测试电路
DUT
NGTB10N60R2DT4G
500H
V
CC
Driver IGBT
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6
NGTB10N60R2DT4G
封装尺寸
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
A
E
C
A
b3
B
c2
4
L3
L4
Z
D
DETAIL A
H
1
2
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
b2
e
BOTTOM VIEW
A
SIDE VIEW
b
b
b2 0.028 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
TOP VIEW
1 : Gate
2 : Collector
3 : Emitter
c
0.018 0.024
c2 0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
4 : Collector
GAUGE
PLANE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
C
0.020 BSC
L3 0.035 0.050
0.89
1.27
1.01
L
BOTTOM VIEW
A1
L4
Z
0.040
L1
ALTERNATE
3.93
0.155
CONSTRUCTIONS
DETAIL A
ROTATED 90 CW
GENERIC
MARKING DIAGRAM*
STYLE 1:
PIN 1. BASE
STYLE 2:
PIN 1. GATE
2. DRAIN
STYLE 3:
STYLE 4:
PIN 1. CATHODE
2. ANODE
STYLE 5:
PIN 1. GATE
PIN 1. ANODE
2. CATHODE
3. ANODE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. ANODE
3. CATHODE
4. ANODE
3. SOURCE
4. DRAIN
3. GATE
4. ANODE
XXXXXXG
ALYWW
AYWW
XXX
4. CATHODE
STYLE 6:
PIN 1. MT1
2. MT2
STYLE 7:
PIN 1. GATE
STYLE 8:
PIN 1. N/C
STYLE 9:
PIN 1. ANODE
2. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
XXXXXG
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
4. COLLECTOR
3. ANODE
4. CATHODE
3. RESISTOR ADJUST
4. CATHODE
3. CATHODE
4. ANODE
IC
Discrete
SOLDERING FOOTPRINT*
XXXXXX = Device Code
A
L
Y
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb-Free Package
6.20
0.244
3.00
0.118
2.58
0.102
*This information is generic. Please refer
to device data sheet for actual part
marking.
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.cn
7
NGTB10N60R2DT4G
订单情况
出货包装
注解
器件名称
封装
2500
pcs. / reel
NGTB10N60R2DT4G
DPAK
不含铅和卤
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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8
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