NGTB15N120IHWG [ONSEMI]
IGBT, 15 A, 1200V in TO247;
| 型号： | NGTB15N120IHWG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 15 A, 1200V in TO247 双极性晶体管 |
| 文件： | 总10页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB15N120IHWG
Product Preview
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
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15 A, 1200 V
Features
VCEsat = 2.10 V
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses in IH Cooker Application
• This is a Pb−Free Device
Eoff = 0.36 mJ
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Collector−emitter voltage
V
CES
1200
Collector current
@ TC = 25°C
I
C
A
30
15
@ TC = 100°C
Pulsed collector current, T
limited
I
60
A
A
TO−247
CASE 340AL
pulse
CM
by T
, 10 ms Pulse, V = 15 V
Jmax
GE
Diode forward current
@ TC = 25°C
I
F
MARKING DIAGRAM
30
15
@ TC = 100°C
Diode pulsed current, T
limited
I
60
A
V
pulse
FM
by T
Jmax
Gate−emitter voltage
Transient Gate−emitter voltage
(T = 5 ms, D < 0.10)
V
$20
$25
GE
15N120IH
AYWWG
pulse
Power Dissipation
P
D
W
@ TC = 25°C
@ TC = 100°C
278
139
Operating junction temperature range
Storage temperature range
T
−40 to +175
−55 to +175
260
°C
°C
°C
J
T
stg
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB15N120IHWG
Package
Shipping
30 Units / Rail
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
TO−247
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
September, 2014 − Rev. P0
NGTB15N120IHW/D
NGTB15N120IHWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.54
40
Unit
°C/W
°C/W
Thermal resistance junction−to−case
Thermal resistance junction−to−ambient
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 15 A
V
CEsat
−
−
2.10
2.30
2.45
−
GE
C
V
GE
= 15 V, I = 15 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 250 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
0.5
2.0
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 150°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V, V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
2615
65
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
50
res
Q
120
24
nC
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 15 A, V = 15 V
ge
gc
C
GE
56
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
t
−
−
−
−
−
−
130
185
0.36
145
240
0.65
−
−
−
−
−
−
ns
d(off)
T = 25°C
J
V
= 600 V, I = 15 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
Turn−off delay time
E
off
mJ
ns
GE
t
d(off)
T = 150°C
J
V
CC
= 600 V, I = 15 A
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
E
off
mJ
V
GE
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 15 A
V
F
−
−
2.0
3.3
2.7
−
GE
F
V
GE
= 0 V, I = 20 A, T = 175°C
F J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB15N120IHWG
TYPICAL CHARACTERISTICS
60
50
40
30
20
60
T = 150°C
13 V
J
11 V
V
= 13 V
to 20 V
GE
50
V
= 15 V
to 20 V
GE
40
30
20
11 V
10 V
8 V
10 V
7 V
9 V
9 V
8 V
10
0
10
0
7 V
T = 25°C
J
0
1
2
3
4
5
6
7
8
0
0
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
60
50
40
30
20
60
50
40
30
20
T = −40°C
J
V
= 15 V
GE
to 20 V
13 V
T = 150°C
J
11 V
10 V
T = 25°C
J
10
0
10
0
9 V
7
0
1
2
3
4
5
6
8
1
2
3
4
5
6
7
8
9 10 11 12 13 14
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.50
3.00
10000
1000
I
C
= 30 A
C
ies
2.50
2.00
1.50
1.00
0.50
0.00
I
= 15 A
C
I
C
= 5 A
100
10
C
oes
C
res
T = 25°C
J
1
−75 −50 −25
0
25 50 75 100 125 150 175 200
10 20
30 40 50
60 70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs TJ
Figure 6. Typical Capacitance
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3
NGTB15N120IHWG
TYPICAL CHARACTERISTICS
60
50
40
30
20
10
0
16
14
12
10
8
V
CE
= 600 V
T = 25°C
J
6
4
T = 150°C
J
V
V
= 600 V
= 15 V
GE
CE
2
0
I
C
= 15 A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
20
40
60
80
100
120
140
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1000
V
V
I
= 600 V
= 15 V
= 15 A
V
V
I
= 600 V
= 15 V
= 15 A
CE
CE
GE
GE
E
off
C
C
Rg = 10 W
Rg = 10 W
t
f
t
d(off)
100
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140 160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1000
V
V
= 600 V
= 15 V
V
V
= 600 V
= 15 V
CE
CE
GE
GE
T = 150°C
T = 150°C
J
J
E
off
Rg = 10 W
Rg = 10 W
t
f
t
d(off)
100
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB15N120IHWG
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1000
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
I
C
= 15 A
t
d(off)
E
t
off
f
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
I
C
= 15 A
100
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1000
V
= 15 V
GE
T = 150°C
J
I
C
= 15 A
E
off
Rg = 10 W
t
f
V
= 15 V
GE
T = 150°C
J
t
d(off)
I
C
= 15 A
Rg = 10 W
100
350 400 450 500 550
350 400 450 500 550
600 650 700 750 800
600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
10
1000
100
50 ms
dc operation
100 ms
1 ms
1
10
1
Single Nonrepetitive
Pulse T = 25°C
C
0.1
Curves must be derated
linearly with increase
in temperature
V
V
= 15 V, T = 125°C
GE
C
0.01
1
10
100
1000
10k
1
10
100
1000
10k
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB15N120IHWG
TYPICAL CHARACTERISTICS
1550
1500
70
60
50
40
30
20
10
0
T
= 110°C
C
1450
1400
1350
1300
1250
1200
T
C
= 80°C
V
V
= 600 V, T ≤ 175°C, R
= 10 W,
= 80°C or 110°C
CE
J
gate
= 0/15 V, T
GE
case
(as noted), D = 0.5
0.01
0.1
1
10
100
1000
−40
−15
10
35
60
85
110 135
T , JUNCTION TEMPERATURE (°C)
J
FREQUENCY (kHz)
Figure 20. Typical V(BR)CES vs. Temperature
Figure 19. Collector Current vs. Switching
Frequency
1
50% Duty Cycle
20%
R
= 0.54
q
JA
0.1
10%
R
C
R
C
R
C
Junction
Case
1
1
2
2
n
R (°C/W) C (J/°C)
i
i
5%
2%
0.143032 0.002211
0.120287 0.008313
0.01
0.001
0.017335
0.104992
0.182418
0.095245
n
Single Pulse
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.0001
1E−06
1E−05
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 21. IGBT Transient Thermal Impedance
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6
NGTB15N120IHWG
Figure 22. Test Circuit for Switching Characteristics
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7
NGTB15N120IHWG
Figure 23. Definition of Turn Off Waveform
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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