NGTB25N120FL2WAG [ONSEMI]
IGBT,1200V,场截止 II,25 A;型号: | NGTB25N120FL2WAG |
厂家: | ONSEMI |
描述: | IGBT,1200V,场截止 II,25 A 双极性晶体管 |
文件: | 总11页 (文件大小:221K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NGTB25N120FL2WAG
IGBT - Field Stop II / 4 Lead
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. In addition, this new
device is packaged in a TO−247−4L package that provides significant
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reduction in E Losses compared to standard TO−247−3L package.
on
The IGBT is well suited for UPS and solar applications. Incorporated
into the device is a soft and fast co−packaged free wheeling diode with
a low forward voltage.
25 A, 1200 V
VCEsat = 2.0 V
Features
Eon = 0.99 mJ
• Extremely Efficient Trench with Field Stop Technology
• T
= 175°C
Jmax
C
• Improved Gate Control Lowers Switching Losses
• Separate Emitter Drive Pin
• TO−247−4L for Minimal E Losses
on
G
• Optimized for High Speed Switching
• This is a Pb−Free Devices
E1
E
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Neutral Point Clamp Topology
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
TO−247
CASE 340AR
4 LEAD
C
E
Collector−emitter voltage
V
CES
1200
V
A
E1
G
Collector current
@ TC = 25°C
@ TC = 100°C
I
C
100
25
MARKING DIAGRAM
Pulsed collector current, T
I
100
A
A
A
V
pulse
CM
limited by T
Jmax
Diode forward current @ TC = 25°C
@ TC = 100°C
I
F
100
25
25N120FL2
AYWWG
Diode pulsed current, T
limited
I
100
pulse
FM
by T
Jmax
Gate−emitter voltage
Transient gate−emitter voltage
(T = 5 ms, D < 0.10)
V
GE
20
30
pulse
Power Dissipation
@ TC = 25°C
@ TC = 100°C
P
D
385
192
W
25N120FL2 = Specific Device Code
Operating junction temperature range
Storage temperature range
T
−55 to +175
−55 to +175
260
°C
°C
°C
J
A
Y
= Assembly Location
= Year
T
stg
WW
G
= Work Week
= Pb−Free Package
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
NGTB25N120FL2WAG TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2016 − Rev. 0
NGTB25N120FL2WA/D
NGTB25N120FL2WAG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.39
0.64
25
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 25 A
V
CEsat
−
−
2.00
2.40
2.40
−
GE
C
V
GE
= 15 V, I = 25 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
I
−
−
−
4.0
0.4
−
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
CE
J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
Input capacitance
C
−
−
−
−
−
−
4243
159
77
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
nC
ns
Q
181
40
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 25 A, V = 15 V
ge
gc
C
GE
87
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
17
19
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
113
118
0.99
0.66
1.65
15
T = 25°C
d(off)
J
V
= 600 V, I = 50 A
CC
C
Fall time
t
f
R = 10 W
g
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
V
= 15V
on
off
GE
E
ts
t
t
d(on)
t
r
19
Turn−off delay time
120
193
1.2
1.3
2.5
T = 175°C
d(off)
J
V
= 600 V, I = 50 A
CC
C
Fall time
t
f
R = 10 W
g
mJ
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
V
= 15V
on
off
GE
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 25 A
V
t
−
−
2.51
2.60
3.00
−
V
GE
F
F
V
GE
= 0 V, I = 25 A, T = 175°C
F
J
T = 25°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
−
−
−
−
−
−
136
0.6
−
−
−
−
−
−
ns
mc
A
J
rr
I = 25 A, V = 400 V
F
R
Q
rr
di /dt = 250 A/ms
F
I
8.4
rrm
T = 175°C
t
rr
251
1.91
14
ns
mc
A
J
I = 25 A, V = 400 V
F
R
Q
rr
di /dt = 250 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB25N120FL2WAG
TYPICAL CHARACTERISTICS
100
90 T = 25°C
100
V
GE
= 20 V − 13 V
V
GE
= 20 V − 15 V
90
80
13 V
11 V
J
80
70
60
50
40
30
20
70 T = 150°C
J
60
50
40
30
20
11 V
10 V
10 V
9 V
9 V
8 V
8 V
7 V
10
0
10
0
7 V
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
100
90
80
70
60
50
40
30
20
100
90
V
= 20 V − 15 V
13 V
11 V
V
=
GE
GE
T = −55°C
J
20 V − 13 V
80
70 T = 175°C
J
60
50
40
30
20
11 V
10 V
9 V
10 V
9 V
8 V
7 V
10
0
10
0
7 V and 8 V
7
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
100
90
80
70
60
50
40
30
3.5
3.0
2.5
T = 25°C
T = 175°C
J
I
= 50 A
J
C
I
I
= 25 A
= 15 A
C
2.0
C
20
10
0
1.5
1.0
2
4
6
8
10
12
14
16
18
−75 −50 −25
0
25 50 75 100 125 150 175 200
V
GE
, GATE−EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
NGTB25N120FL2WAG
TYPICAL CHARACTERISTICS
10,000
1000
100
90
C
T = 25°C
ies
J
80
T = 175°C
J
70
T = 25°C
J
60
50
40
30
20
C
oes
100
10
C
res
10
0
0
0
0
10 20 30 40 50 60 70 80 90 100
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
16
14
12
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
V
= 600 V
= 15 V
CE
GE
I
= 25 A
Rg = 10 W
C
E
on
8
6
4
E
off
V
V
I
= 600 V
= 15 V
= 25 A
CE
GE
2
0
C
0.5
0.4
50
100
Q , GATE CHARGE (nC)
150
200
0
20 40
60 80 100 120 140 160 180 200
T , JUNCTION TEMPERATURE (°C)
J
G
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1000
100
6
5
4
3
2
V
V
= 600 V
= 15 V
CE
GE
E
E
t
f
T = 175°C
off
J
Rg = 10 W
t
t
d(off)
t
r
on
d(on)
10
1
V
V
= 600 V
= 15 V
CE
GE
1
0
I
C
= 25 A
Rg = 10 W
20 40
60 80 100 120 140 160 180 200
10
20
30
40
50
60
70
80
90
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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4
NGTB25N120FL2WAG
TYPICAL CHARACTERISTICS
7
1000
100
V
V
= 600 V
= 15 V
CE
6
5
4
3
2
GE
T = 175°C
J
t
t
E
E
d(off)
on
I
C
= 25 A
t
f
t
r
d(on)
10
1
V
V
= 600 V
= 15 V
CE
off
GE
T = 175°C
1
0
J
Rg = 10 W
10
20
30
40
50
60
70
80
90
5
10 15 20 25 30 35 40 45 50 55 60 65 70
I , COLLECTOR CURRENT (A)
C
R , GATE RESISTOR (W)
G
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
1000
2.25
2.00
1.75
1.50
1.25
1.00
V
GE
= 15 V
E
on
T = 175°C
J
t
t
d(off)
I
C
= 25 A
t
f
Rg = 10 W
t
r
E
off
100
d(on)
V
V
= 600 V
= 15 V
CE
GE
T = 175°C
J
0.75
0.50
I
C
= 25 A
10
5
10 15 20 25 30 35 40 45 50 55 60 65 70
350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
R , GATE RESISTOR (W)
G
V
CE
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
1000
100
10
t
f
t
t
d(off)
dc operation
100
50 ms
V
= 15 V
GE
T = 175°C
100 ms
J
Single Nonrepetitive
I
C
= 25 A
Pulse T = 25°C
C
1
Rg = 10 W
Curves must be derated
linearly with increase
in temperature
t
r
1 ms
d(on)
10
0.1
350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
1
10
100
1K
10K
V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
NGTB25N120FL2WAG
TYPICAL CHARACTERISTICS
280
240
200
160
120
80
1000
100
V
R
= 400 V
T = 175°C, I = 25 A
J
F
10
1
T = 25°C, I = 25 A
J
F
40
0
V
GE
= 15 V, T = 175°C
C
1
10
100
1K
10K
100
300
500
700
900
1100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
3.0
2.5
2.0
1.5
1.0
50
40
30
20
V
R
= 400 V
V
R
= 400 V
T = 175°C, I = 25 A
J
F
T = 175°C, I = 25 A
J
F
T = 25°C, I = 25 A
T = 25°C, I = 25 A
J
J
F
F
10
0
0.5
0
100
300
500
700
900
1100
100
300
500
700
900
1100
di /dt, DIODE CURRENT SLOPE (A/ms)
F
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
4.5
4.0
3.5
3.0
2.5
2.0
I
= 50 A
C
I
I
= 25 A
= 15 A
C
C
1.5
1.0
−75 −50 −25
0
25 50 75 100 125 150 175 200
T , JUNCTION TEMPERATURE (°C)
J
Figure 23. VF vs. TJ
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6
NGTB25N120FL2WAG
TYPICAL CHARACTERISTICS
120
100
80
V
R
V
= 1200 V,
CE
= 10 W,
gate
= 15 V
GE
T
C
= 80°C
60
T
C
= 80°C
40
T
C
= 110°C
20
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
1
R
= 0.39
q
JC
50% Duty Cycle
20%
10%
5%
0.1
R (°C/W) C (J/W)
i
i
R
C
R
C
R
Case
Junction
1
1
2
2
n
0.0000
0.0931
0.0559
0.1139
0.1187
0.0079
0.0000
0.0034
0.0179
0.0278
0.0842
3.9962
2%
0.01
0.001
C
n
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
C
q
Single Pulse
0.000001
J
DM
JC
0.0001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 25. IGBT Transient Thermal Impedance
1
R
= 0.64
q
JC
50% Duty Cycle
20%
R (°C/W) C (J/W)
i
i
0.011340 0.000088
0.014990 0.000667
0.016940 0.001867
0.042332 0.002362
0.078099 0.004049
0.047602 0.021008
0.036620 0.086355
0.075461 0.132519
0.175331 0.180361
0.135892 0.735876
R
C
R
C
R
Case
Junction
1
1
2
2
n
0.1
10%
5%
2%
C
n
Duty Factor = t /t
1
2
Single Pulse
0.000001 0.00001
Peak T = P
x Z
+ T
JC C
q
J
DM
0.01
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 26. Diode Transient Thermal Impedance
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7
NGTB25N120FL2WAG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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8
NGTB25N120FL2WAG
Figure 29. Definition of Turn Off Waveform
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247 4−LEAD
CASE 340AR
ISSUE A
DATE 07 MAY 2020
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON97044F
TO−247 4−LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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SI9122E
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