NGTB25N120FL2WG_16 [ONSEMI]
IGBT - Field Stop II;
| 型号： | NGTB25N120FL2WG_16 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - Field Stop II 双极性晶体管 |
| 文件： | 总10页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB25N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
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Features
25 A, 1200 V
• Extremely Efficient Trench with Field Stop Technology
VCEsat = 2.0 V
• T
= 175°C
Jmax
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 10 ms Short Circuit Capability
• These are Pb−Free Devices
Eoff = 0.60 mJ
C
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
1200
Collector current
@ TC = 25°C
A
50
25
G
TO−247
CASE 340AL
@ TC = 100°C
C
E
Pulsed collector current, T
ICM
IF
100
A
A
pulse
limited by T
Jmax
Diode forward current
@ TC = 25°C
50
25
MARKING DIAGRAM
@ TC = 100°C
Diode pulsed current, T
limited
IFM
100
A
V
pulse
by T
Jmax
Gate−emitter voltage
Transient gate−emitter voltage
(T = 5 ms, D < 0.10)
VGE
$20
30
pulse
25N120FL2
AYWWG
Power Dissipation
PD
W
@ TC = 25°C
@ TC = 100°C
385
192
Short Circuit Withstand Time
T
10
ms
°C
SC
V
GE
= 15 V, V = 500 V, T ≤ 150°C
CE J
Operating junction temperature
range
T
−55 to +175
J
A
Y
= Assembly Location
= Year
Storage temperature range
T
−55 to +175
260
°C
°C
stg
WW
G
= Work Week
= Pb−Free Package
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NGTB25N120FL2WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
December, 2016 − Rev. 2
NGTB25N120FL2W/D
NGTB25N120FL2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.39
0.59
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 25 A
V
CEsat
−
−
2.00
2.40
2.40
−
GE
C
V
GE
= 15 V, I = 25 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
I
−
−
−
2.5
0.4
−
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
CE
J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
Input capacitance
C
−
−
−
−
−
−
4420
151
81
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
nC
ns
Q
178
39
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 25 A, V = 15 V
ge
gc
C
GE
83
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
87
28
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
179
136
1.95
0.60
2.55
84
T = 25°C
d(off)
J
V
= 600 V, I = 25 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
GE
on
off
E
ts
t
t
d(on)
t
r
29
Turn−off delay time
185
245
2.39
1.26
3.65
T = 150°C
d(off)
J
V
= 600 V, I = 25 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
mJ
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
GE
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 25 A
V
t
−
−
2.10
2.30
2.60
−
V
GE
F
F
V
GE
= 0 V, I = 50 A, T = 175°C
F
J
T = 25°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
−
−
−
154
1.3
15
−
−
−
ns
mc
A
J
rr
I = 25 A, V = 400 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB25N120FL2WG
TYPICAL CHARACTERISTICS
100
100
90
80
70
60
50
40
30
20
T = 150°C
J
V
= 13 V
to 20 V
GE
90
80
70
60
50
40
30
T = 25°C
J
V
GE
= 13 V
to 20 V
11 V
10 V
11 V
10 V
9 V
9 V
8 V
20
8 V
7 V
7 V
10
0
10
0
0
1
2
3
4
5
6
7
8
0
0
0
1
2
3
, COLLECTOR−EMITTER VOLTAGE (V)
CE
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
Figure 1. Output Characteristics
Figure 2. Output Characteristics
45
40
35
30
25
20
15
10
100
90
80
70
60
50
40
30
20
V
GE
= 13 V
to 20 V
T = −55°C
J
11 V
10 V
T = 150°C
J
T = 25°C
J
9 V
8 V
5
0
10
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
10,000
4.0
3.5
3.0
2.5
2.0
1.5
1.0
I
C
= 50 A
C
ies
1000
100
10
I
I
= 25 A
= 15 A
C
C
oes
C
C
res
T = 25°C
J
0.5
0
1
−75 −50 −25
0
25 50 75 100 125 150 175 200
10 20 30
40 50
60 70 80 90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB25N120FL2WG
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
16
14
12
T = 25°C
J
T = 150°C
J
10
8
6
V
V
= 600 V
= 25 V
4
CE
GE
5
0
2
0
I
C
= 25 A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
50
100
Q , GATE CHARGE (nC)
150
200
V , FORWARD VOLTAGE (V)
F
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
3.0
2.5
2.0
1.5
1.0
1000
V
V
= 600 V
= 15 V
= 25 A
CE
V
V
= 600 V
= 15 V
= 25 A
CE
GE
GE
I
C
I
C
t
Rg = 10 W
f
Rg = 10 W
E
E
on
t
t
d(off)
100
d(on)
off
t
r
0.5
0
10
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140 160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
5
4
3
2
1000
E
V
V
= 600 V
= 15 V
on
CE
V
V
= 600 V
= 15 V
CE
GE
GE
T = 150°C
J
T = 150°C
t
J
f
Rg = 10 W
Rg = 10 W
t
t
d(off)
E
off
100
d(on)
1
0
t
r
10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB25N120FL2WG
TYPICAL CHARACTERISTICS
6
5
4
3
2
1000
V
V
= 600 V
= 15 V
t
CE
d(off)
E
ON
GE
T = 150°C
J
t
f
I
C
= 25 A
t
d(on)
100
t
r
E
OFF
V
V
= 600 V
= 15 V
CE
GE
1
0
T = 150°C
J
I
C
= 25 A
10
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
4
3
2
1000
V
= 15 V
GE
V
= 15 V
GE
T = 150°C
J
T = 150°C
J
E
ON
I
C
= 25 A
I
C
= 25 A
t
f
Rg = 10 W
Rg = 10 W
t
d(off)
100
E
OFF
t
d(on)
t
r
1
0
10
350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
350 400 450 500 550 600 650 700 750 800
V , COLLECTOR−EMITTER VOLTAGE (V)
V
CE
CE
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
10
1000
100
dc operation
50 ms
100 ms
Single Nonrepetitive
10
1
Pulse T = 25°C
C
1
Curves must be derated
linearly with increase
in temperature
1 ms
V
GE
= 15 V, T = 125°C
C
0.1
1
10
100
1000
10k
1
10
100
1000
10k
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB25N120FL2WG
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
R
= 0.39
q
JC
20%
10%
5%
R
C
R
C
R
C
Junction
Case
1
1
2
2
n
R (°C/W) C (J/°C)
0.003402 0.000294
0.002017 0.001568
0.000965
0.013782
i
i
2%
0.01
0.010366
0.002294
n
0.001409 0.070949
0.001
0.0065442
0.4098053
0.048322
0.244018
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 19. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response
1
R
= 0.59
q
JC
50% Duty Cycle
20%
R (°C/W) C (J/°C)
i
i
R
C
R
C
R
n
Junction
Case
1
1
2
0.003402 0.000294
0.002017 0.001568
0.000965 0.010366
0.013782 0.002294
0.001409 0.070949
0.1
10%
5%
C
2
n
2%
0.006544
0.409805
0.048322
0.244018
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
Single Pulse
0.000001 0.00001
q
J
DM
0.01
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 20. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response
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6
NGTB25N120FL2WG
120
100
80
60
40
20
0
T
C
= 80°C
T
= 110°C
C
0.01
0.1
1
10
100
1000
Freq (kHz)
Figure 21. Collector Current vs. Switching Frequency
Figure 22. Test Circuit for Switching Characteristics
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7
NGTB25N120FL2WG
Figure 23. Definition of Turn On Waveform
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8
NGTB25N120FL2WG
Figure 24. Definition of Turn Off Waveform
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9
NGTB25N120FL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.40
2.35
3.40
0.80
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.00
1.65
2.60
0.40
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
B A
0.25
e
Q
S
5.40
6.20
6.15 BSC
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