NGTB35N65FL2WG [ONSEMI]
IGBT 650V 35A FS2 太阳能/UPS;
| 型号： | NGTB35N65FL2WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 650V 35A FS2 太阳能/UPS 双极性晶体管 |
| 文件： | 总9页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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IGBT - Field Stop II
NGTB35N65FL2WG
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
35 A, 650 V
VCEsat = 1.70 V
Eoff = 0.28 mJ
C
G
Features
• Extremely Efficient Trench with Field Stop Technology
E
• T
= 175°C
Jmax
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
G
C
E
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
TO−247
CASE 340AM
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter Voltage
Collector Current
Symbol
VCES
IC
Value
Unit
V
650
A
35N65FL2
AYWWG
@ T = 25°C
70
35
C
@ T = 100°C
C
Diode Forward Current
I
F
A
@ T = 25°C
70
35
C
@ T = 100°C
C
Diode Pulsed Current
I
120
120
5
A
A
FM
T
Limited by T Max
PULSE
J
35N65FL2 = Specific Device Code
Pulsed Collector Current, T
I
pulse
CM
A
Y
= Assembly Location
= Year
Limited by T
Jmax
Short−circuit Withstand Time
t
ms
SC
WW
G
= Work Week
= Pb−Free Package
V
J
= 15 V, V = 400 V,
GE
CE
T ≤ +150°C
VGE
V
V
Gate−emitter Voltage
$20
$30
Transient Gate−emitter Voltage
ORDERING INFORMATION
(T
PULSE
= 5 ms, D < 0.10)
Device
NGTB35N65FL2WG
Package
Shipping
30 Units / Rail
Power Dissipation
PD
W
@ T = 25°C
300
150
TO−247
(Pb−Free)
C
@ T = 100°C
C
Operating Junction Temperature
Range
T
J
−55 to +175
°C
Storage Temperature Range
T
−55 to +175
°C
°C
stg
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
October, 2021 − Rev. 3
NGTB35N65FL2W/D
NGTB35N65FL2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.50
1.00
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
650
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 35 A
V
CEsat
1.50
−
1.70
2.20
2.00
−
GE
C
V
GE
= 15 V, I = 35 A, T = 175°C
C
J
Gate−emitter threshold voltage
V
V
= V , I = 350 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 650 V
I
−
−
−
−
0.5
4.0
mA
GE
CE
CES
V
GE
= 0 V, V = 650 V, T 175°C
CE J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
3115
149
88
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
125
30
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 480 V, I = 35 A, V = 15 V
ge
gc
C
GE
63
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
72
40
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
132
75
T = 25°C
d(off)
J
V
= 400 V, I = 35 A
CC
C
Fall time
t
f
R = 10 W
GE
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
0.84
0.28
1.12
70
V
= 0 V/ 15 V
mJ
ns
on
off
E
ts
t
t
d(on)
t
r
38
Turn−off delay time
135
96
T = 150°C
d(off)
J
V
= 400 V, I = 35 A
C
CC
Fall time
t
f
R = 10 W
GE
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
1.05
0.50
1.55
V
= 0 V/ 15 V
mJ
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 35 A
V
F
1.50
−
2.20
2.25
2.90
−
V
GE
F
V
GE
= 0 V, I = 35 A, T = 175°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
−
−
−
68
265
7
−
−
−
−
−
−
ns
nC
A
rr
T = 25°C
J
Q
I = 35 A, V = 200 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
t
rr
156
836
8.43
ns
nC
A
T = 175°C
J
Q
I = 35 A, V = 400 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB35N65FL2WG
TYPICAL CHARACTERISTICS
140
120
100
80
140
T = 25°C
J
T = 150°C
J
15 V
13 V
120
100
80
60
40
20
0
V
GE
= 20 to 15 V
V
GE
= 20 to 17 V
13 V
60
11 V
10 V
11 V
10 V
40
9 V
8 V
7 V
7 V
20
9 V
8 V
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
140
120
100
80
140
120
100
80
T = −55°C
J
V
GE
= 20 to
15 V
T = 25°C
J
13 V
T = 150°C
J
60
60
11 V
10 V
40
40
20
20
7 V
9 V
8 V
0
0
0
1
2
3
4
5
6
7
8
0
4
6
8
10
12
14
16
18
2
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.75
3.50
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
10,000
1000
I
= 70 A
C
C
ies
I
I
= 35 A
C
= 15 A
= 5 A
C
C
oes
100
10
I
C
C
res
T = 25°C
J
0
10
20
30 40 50
60
70
80 90 100
−75 −50 −25
0
25 50 75 100 125 150 175 200
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB35N65FL2WG
TYPICAL CHARACTERISTICS
110
100
90
80
70
60
50
40
30
20
10
0
20
18
16
14
12
10
T = 25°C
J
T = 150°C
J
8
6
4
2
0
V
V
= 480 V
= 15 V
= 35 A
CE
GE
I
C
40
60
80
0
0.5
1.0
1.5
2.0
2.5 3.0
3.5
4.0
0
20
100
120 140
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1.75
1.5
1.25
1
1000
100
V
V
= 400 V
= 15 V
= 35 A
CE
V
V
= 400 V
= 15 V
= 35 A
CE
GE
GE
I
C
I
C
Rg = 10 W
Rg = 10 W
t
E
on
d(off)
t
f
0.75
0.5
0.25
0
t
d(on)
E
off
t
r
10
0
20
40
60
80
100
120
140 160
0
20
40
60
80
100
120
140
160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
3.5
3
1000
V
= 400 V
= 15 V
V
V
= 400 V
= 15 V
CE
CE
V
GE
GE
T = 150°C
T = 150°C
J
J
Rg = 10 W
Rg = 10 W
2.5
2
E
on
t
t
d(off)
t
f
100
1.5
1
d(on)
E
off
t
r
0.5
0
10
15 20 25 30 35 40 45 50 55 60 65 70 75
15 20 25 30 35 40 45 50 55 60 65 70 75
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB35N65FL2WG
TYPICAL CHARACTERISTICS
10000
4
3.5
3
V
V
= 400 V
= 15 V
CE
GE
T = 150°C
J
E
on
I
C
= 35 A
1000
t
t
d(off)
2.5
2
t
f
1.5
1
d(on)
100
10
V
V
= 400 V
= 15 V
E
off
CE
t
r
GE
0.5
0
T = 150°C
J
I
= 35 A
75
C
5
15
25
35
45
55
65
75
5
15
25
35
45
55
65
85
R , GATE RESISTOR (W)
g
R , GATE RESISTOR (W)
g
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
2
1.8
1.6
1.4
1.2
1
1000
100
10
I
V
= 35 A
C
I
V
= 35 A
C
= 15 V
E
GE
on
off
= 15 V
GE
T = 150°C
Rg = 10 W
J
T = 150°C
Rg = 10 W
J
t
t
d(off)
t
f
E
0.8
0.6
0.4
0.2
0
d(on)
t
r
150 200 250 300 350 400 450 500 550 600
, COLLECTOR−EMITTER VOLTAGE (V)
175 225
275 325
375 425
475 525 575
V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1000
100
10
V
GE
= 15 V, T = 125°C
C
1 ms
100 ms
100
10
1
50 ms
dc operation
Single Nonrepetitive
1
Pulse T = 25°C
C
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB35N65FL2WG
TYPICAL CHARACTERISTICS
2.0
1.5
1.0
160
140
120
100
80
T = 175°C, I = 35 A
J
F
T = 175°C, I = 35 A
J
F
T = 25°C, I = 35 A
T = 25°C, I = 35 A
J
F
J
F
0.5
0
60
40
100
300
500
700
900
1100
100
300
500
700
900
1100
di /dt, DIODE CURRENT SLOPE (A/ms)
F
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 19. trr vs. diF/dt
(VR = 400 V)
Figure 20. Qrr vs. diF/dt
(VR = 400 V)
30
20
3.5
3.0
2.5
2.0
I = 60 A
F
T = 175°C, I = 35 A
J
F
I = 50 A
F
I = 35 A
F
T = 25°C, I = 35 A
J
F
10
0
1.5
1.0
100
300
500
700
900
1100
−75 −50 −25
0
25 50 75 100 125 150 175 200
di /dt, DIODE CURRENT SLOPE (A/ms)
F
T , JUNCTION TEMPERATURE (°C)
J
Figure 21. Irm vs. diF/dt
(VR = 400 V)
Figure 22. VF vs. TJ
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6
NGTB35N65FL2WG
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
R
= 0.50
q
JC
20%
10%
5%
2%
R (°C/W)
t (sec)
i
i
R
C
R
C
R
n
Junction
C = t /R
Case
1
1
2
2
0.0642
0.0608
0.0507
0.1706
0.1422
0.0094
0.0016
0.0052
0.0197
0.0185
0.0703
3.3481
0.01
i
i
i
C
n
0.001
Single Pulse
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.0001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 23. IGBT Transient Thermal Impedance
1
0.1
R
= 1.0
q
JC
50% Duty Cycle
20%
10%
R (°C/W)
t (sec)
i
i
0.015509 0.000064
0.020310 0.000492
0.022591 0.001400
0.050667
0.93366
0.195285
0.133203
0.173839
0.251384
0.039982
R
C
R
C
R
n
Junction
C = t /R
Case
1
1
2
2
0.001974
0.003387
0.005121
0.023740
0.047425
0.125795
2.501137
5%
2%
i
i
i
0.01
0.001
C
n
Single Pulse
Duty Factor = t /t
1 2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 24. Diode Transient Thermal Impedance
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AM
ISSUE C
DATE 07 SEP 2021
GENERIC
MARKING DIAGRAMS*
XXXXXXXXX
AYWWG
XXXXXXXXX
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON77284F
TO−247
PAGE 1 OF 1
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