NGTB40N120S3WG [ONSEMI]
IGBT，1200V，40A，低 VF FSIII;
| 型号： | NGTB40N120S3WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，40A，低 VF FSIII 双极性晶体管 |
| 文件： | 总12页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB40N120S3WG
IGBT - Ultra Field Stop
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
low switching losses. The IGBT is well suited for applications that
require fast switching IGBT with low V diodes, e.g. phase−shifted full
bridge, etc. Incorporated into the device is a free wheeling diode with a
low forward voltage.
F
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40 A, 1200 V
Features
V
CEsat = 1.7 V
• Extremely Efficient Trench with Field Stop Technology
Eoff = 1.1 mJ
• T
= 175°C
Jmax
• Low V Reverse Diode
F
C
• Optimized for High Speed Switching
• These are Pb−Free Devices
Typical Applications
• Welding
G
• Uninterruptible Power Inverter Supplies (UPS)
• Motor Control
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Collector−emitter voltage
V
CES
1200
Collector current
@ TC = 25°C
I
A
C
160
40
G
@ TC = 100°C
TO−247
CASE 340AL
C
E
Pulsed collector current, T
I
160
A
A
pulse
CM
limited by T
Jmax
Diode forward current
@ TC = 25°C
I
F
MARKING DIAGRAM
160
40
@ TC = 100°C
Diode pulsed current, T
limited
I
160
A
V
pulse
FM
by T
Jmax
Gate−emitter voltage
Transient gate−emitter voltage
(T = 5 ms, D < 0.10)
V
20
30
GE
40N120S3
AYWWG
pulse
Power Dissipation
P
D
W
@ TC = 25°C
@ TC = 100°C
454
227
Operating junction temperature range
Storage temperature range
T
−55 to +175
−55 to +175
260
°C
°C
°C
J
T
stg
Lead temperature for soldering, 1/8″
from case for 10 seconds
T
SLD
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NGTB40N120S3WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
March, 2018 − Rev. 0
NGTB40N120S3W/D
NGTB40N120S3WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.34
0.5
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
40
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 40 A
V
CEsat
−
−
1.7
2.3
1.95
−
GE
C
V
GE
= 15 V, I = 40 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
I
−
−
−
0.5
0.4
−
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
CE
J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
Input capacitance
C
−
−
−
−
−
−
4912
140
80
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
212
43
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 40 A, V = 15 V
ge
gc
C
GE
102
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
12
25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
145
107
2.2
1.1
3.3
13
T = 25°C
d(off)
J
V
= 600 V, I = 40 A
CC
C
Fall time
t
f
R = 10 W
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
V
= 15V
E
E
mJ
ns
GE
on
off
E
ts
t
t
d(on)
t
r
24
Turn−off delay time
153
173
2.8
1.6
4.4
T = 175°C
d(off)
J
V
= 600 V, I = 40 A
CC
C
Fall time
t
f
R = 10 W
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
V
= 15 V
E
E
mJ
V
GE
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 40 A
V
F
−
−
2.0
2.55
2.6
−
GE
F
V
= 0 V, I = 40 A, T = 175°C
GE
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
−
163
2.9
30
−
−
−
−
ns
mc
rr
Q
rr
T = 25°C
J
I = 40 A, V = 400 V
F
R
I
A
rrm
di /dt = 500 A/ms
F
Diode peak rate of fall of reverse recovery
current during tb
dI /dt
rrm
137
A/ms
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2
NGTB40N120S3WG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTIC
Reverse recovery time
t
−
−
−
−
250
5.3
40
−
−
−
−
ns
mc
rr
Reverse recovery charge
Reverse recovery current
Q
rr
T = 175°C
J
I = 40 A, V = 400 V
F
R
I
A
rrm
di /dt = 500 A/ms
F
Diode peak rate of fall of reverse recovery
current during tb
dI /dt
rrm
482
A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NGTB40N120S3WG
TYPICAL CHARACTERISTICS
160
160
140
120
100
80
V
GE
= 20 to 13 V
V
GE
= 20 to 13 V
T = 25°C
J
T = 150°C
J
140
120
100
80
11 V
10 V
11 V
10 V
60
40
60
9 V
8 V
40
9 V
8 V
20
0
20
0
7 V
5
7 V
7
0
0
0
1
2
3
4
6
7
8
0
1
2
3
4
5
6
8
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
140
160
140
V
GE
= 20 to 13 V
T = −55°C
V
GE
= 20 to 13 V
J
11 V
10 V
120
100
80
120
100
80
11 V
10 V
T = 175°C
J
60
60
9 V
8 V
40
40
9 V
20
0
20
0
7 V
7−8 V
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
160
140
120
100
80
3.5
3.0
2.5
2.0
I
C
= 75 A
I
I
= 40 A
= 20 A
C
60
C
40
1.5
1.0
T = 175°C
J
20
0
T = 25°C
J
2
4
6
8
10
12
14
−75 −50 −25
0
25 50 75 100 125 150 175 200
V
GE
, GATE−EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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4
NGTB40N120S3WG
TYPICAL CHARACTERISTICS
10,000
1000
100
90
T = 25°C
J
C
T = 175°C
J
ies
80
70
T = 25°C
J
60
50
40
30
20
C
oes
100
10
C
res
10
0
0
0
0
10
20 30 40 50 60 70 80 90 100
0
0.5 1.0 1.5 2.0 2.5 3.0
V , FORWARD VOLTAGE (V)
3.5 4.0 4.5
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
F
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
16
14
12
3.3
2.8
2.3
V
V
I
= 600 V
= 15 V
= 40 A
CE
GE
E
on
C
Rg = 10 W
10
8
1.8
1.3
E
off
6
V
V
= 600 V
= 15 V
4
CE
GE
0.8
0.3
2
0
I
C
= 40 A
50
100
150
200
250
0
20 40 60 80 100 120 140 160 180 200
Q , GATE CHARGE (nC)
G
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
7
6
5
4
3
2
1000
100
V
V
= 600 V
= 15 V
T = 175°C
CE
GE
E
on
off
t
f
J
Rg = 10 W
t
t
d(off)
t
r
E
10
1
d(on)
V
V
= 600 V
= 15 V
CE
GE
1
0
I
C
= 40 A
Rg = 10 W
20 40 60 80 100 120 140 160 180 200
10
20
30
40
50
60
70
80
90
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. Temperature
Figure 12. Switching Loss vs. IC
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5
NGTB40N120S3WG
TYPICAL CHARACTERISTICS
10
1000
100
V
V
= 600 V
= 15 V
CE
9
8
7
6
5
4
3
GE
t
E
on
f
T = 175°C
J
I
C
= 40 A
t
t
d(off)
t
r
d(on)
10
1
V
V
= 600 V
= 15 V
CE
E
off
2
1
0
GE
T = 175°C
J
Rg = 10 W
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1000
V
= 15 V
= 40 A
E
GE
on
t
d(off)
I
C
Rg = 10 W
T = 175°C
J
t
f
t
r
t
100
d(on)
E
off
V
V
= 600 V
= 15 V
CE
GE
T = 175°C
J
0.5
0
I
C
= 40 A
10
0
10
20
30
40
50
60
70
350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
Rg, GATE RESISTOR (W)
V
CE
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
1000
100
V
= 15 V
= 40 A
GE
I
C
Rg = 10 W
T = 175°C
J
t
f
t
t
dc operation
d(off)
10
100
50 ms
100 ms
Single Nonrepetitive
Pulse T = 25°C
C
1
1 ms
Curves must be derated
linearly with increase
in temperature
t
r
d(on)
10
0.1
350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
1
10
100
1000
10,000
V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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NGTB40N120S3WG
TYPICAL CHARACTERISTICS
400
350
300
250
200
1000
100
V
R
= 400 V
T = 175°C, I = 40 A
J
F
T = 25°C, I = 40 A
J
F
150
100
10
1
V
GE
= 15 V, T = 175°C
C
50
0
1
10
100
1000
10,000
100
300
500
700
900
1100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
6
5
4
3
2
60
50
40
30
20
T = 175°C, I = 40 A
J
F
T = 175°C, I = 40 A
J
F
T = 25°C, I = 40 A
J
F
T = 25°C, I = 40 A
J
F
10
0
1
0
V
= 400 V
R
V
= 400 V
R
100
300
500
700
900
1100
100
300
500
700
900
1100
di /dt, DIODE CURRENT SLOPE (A/ms)
F
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
3.5
3.0
I = 80 A
F
2.5
2.0
I = 40 A
F
I = 20 A
F
1.5
1.0
−75 −50 −25
0
25 50 75 100 125 150 175 200
T , JUNCTION TEMPERATURE (°C)
J
Figure 23. VF vs. TJ
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NGTB40N120S3WG
TYPICAL CHARACTERISTICS
180
160
140
Ramp, T = 110°C
C
Square, T = 80°C
C
Ramp, T = 80°C
C
120
100
80
Square, T = 110°C
C
60
40
V
CE
= 600 V, R = 10 W, V = 15 V
G GE
20
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
1
0.1
R
= 0.34
q
JC
50% Duty Cycle
20%
10%
5%
Duty Factor = t /t
1
2
0.01
2%
Peak T = P
x Z
+ T
C
q
J
DM
JC
R (°C/W) Ci (J/W)
i
R
C
R
C
R
Junction
C = t /R
Case
1
1
2
2
n
0.0065
0.0811
0.0186
0.1007
0.1115
0.0172
0.0154
0.0039
0.0539
0.0314
0.0897
1.8437
0.001
i
i
i
Single Pulse
C
n
0.0001
0.000001
0.00001
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 25. IGBT Transient Thermal Impedance
1
R
= 0.50
q
JC
50% Duty Cycle
20%
10%
5%
R (°C/W) Ci (J/W)
0.1
i
0.017265 0.000058
0.023397 0.000427
0.025095 0.001260
0.073345 0.001363
0.093146 0.003395
0.043705 0.022881
0.060153 0.052571
0.127694 0.078312
0.246682 0.128193
0.070293 1.422617
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
2%
R
C
R
C
R
Junction
C = t /R
Case
1
1
2
2
n
0.01
Single Pulse
i
i
i
C
n
0.001
0.000001
0.00001
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 26. Diode Transient Thermal Impedance
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8
NGTB40N120S3WG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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9
NGTB40N120S3WG
Figure 29. Definition of Turn Off Waveform
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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