NGTB40N65IHRTG [ONSEMI]
IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A;
| 型号： | NGTB40N65IHRTG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A 双极性晶体管 |
| 文件： | 总9页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB40N65IHRTG
IGBT with Monolithic
Reverse Conducting Diode
This Insulated Gate Bipolar Transistor (IGBT) features robust and
cost effective Field Stop (FS2) trench construction with a monolithic
RC Diode. It provides a cost effective Solution for applications where
diode losses are minimal. The IGBT is optimized for low conduction
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losses (low V ) and is well suited for resonant or soft switching
CEsat
applications.
40 A, 650 V
Features
V
CEsat = 1.55 V
• Extremely Efficient Trench with Fieldstop Technology
• Low Conduction Design for Soft Switching Application
• Reduced Power Dissipation in Inducting Heating Application
• Reliable and Cost Effective Single Die Solution
• This is a Pb−Free Device
Eoff = 0.42 mJ
C
Typical Applications
• Inductive Heating
• Air Conditioning PFC
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
Symbol
Value
Unit
V
V
CES
650
I
C
A
@ T = 25°C
80
40
C
G
C
E
@ T = 100°C
C
TO−3P
CASE 340AB
Pulsed collector current, T
limited
I
160
A
A
pulse
CM
by T
, 10 ms pulse, V = 15 V
Jmax
GE
Diode forward current
I
F
@ T = 25°C
80
40
C
MARKING DIAGRAM
@ T = 100°C
C
Diode pulsed current, T
limited
I
160
A
pulse
FM
by T
, 10 ms pulse, V = 0 V
Jmax
GE
Power Dissipation
P
D
W
40N65HG
AYWW
@ T = 25°C
405
202
C
@ T = 100°C
C
Operating junction temperature range
Storage temperature range
T
−40 to +175
−55 to +175
260
°C
°C
°C
J
T
stg
40N65H = Specific Device Code
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
G
A
Y
= Pb−Free Package
= Assembly Location
= Year
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
30 Units / Rail
NGTB40N65IHRTG
TO−3P
(Pb−Free)
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
May, 2017 − Rev. 1
NGTB40N65IHRTG/D
NGTB40N65IHRTG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.37
40
Unit
°C/W
°C/W
Thermal resistance junction−to−case
Thermal resistance junction−to−ambient
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
650
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 40 A
V
CEsat
−
−
1.55
1.95
1.7
−
GE
C
V
GE
= 15 V, I = 40 A, T = 175°C
C J
Gate−emitter threshold voltage
V
V
= V , I = 350 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 650 V
I
−
−
−
1.0
0.3
−
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
CE
J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V, V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
4628
148
126
190
38
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 400 V, I = 40 A, V = 15 V
ge
gc
C
GE
90
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
t
−
−
−
−
−
−
197
74
−
−
−
−
−
−
ns
d(off)
T = 25°C
J
V
= 400 V, I = 40 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
Turn−off delay time
E
off
0.42
210
106
0.7
mJ
ns
GE
t
d(off)
T = 175°C
J
V
CC
= 400 V, I = 40 A
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
E
off
mJ
V
GE
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 40 A
V
F
−
−
1.50
1.70
1.80
−
GE
F
V
GE
= 0 V, I = 40 A, T = 175°C
F J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB40N65IHRTG
TYPICAL CHARACTERISTICS
140
140
120
100
80
T = 25°C
V
= 13 V
to 20 V
V
= 13 V
to 20 V
J
T = 150°C
GE
GE
J
11 V
120
100
80
11 V
10 V
9 V
10 V
9 V
60
60
40
40
8 V
7 V
20
0
20
0
8 V
7 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
140
120
100
80
140
120
100
80
T = −55°C
J
V
= 13 V
to 20 V
T = 175°C
GE
V
= 13 V
to 20 V
J
GE
11 V
11 V
10 V
9 V
10 V
60
60
40
40
9 V
8 V
7 V
20
0
20
0
7 V
8 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
140
2.6
2.4
120
100
80
I
I
= 60 A
= 40 A
C
2.2
2.0
1.8
1.6
1.4
C
60
I
C
= 20 A
40
T = 175°C
J
20
0
1.2
1.0
T = 25°C
J
0
2
4
6
8
10
12
14
−75
−25
25
75
125
175
V
GE
, GATE−EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
NGTB40N65IHRTG
TYPICAL CHARACTERISTICS
10K
1K
100
90
C
ies
T = 25°C
J
80
T = 175°C
J
70
T = 25°C
J
60
50
40
30
20
10
0
C
oes
C
res
100
10
0
0
0
10 20
30 40 50
60 70 80
90 100
0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
20
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
V
V
I
= 400 V
= 15 V
= 40 A
CE
18
16
14
12
10
8
GE
E
(off)
C
V
V
= 400 V
= 15 V
= 40 A
CE
6
GE
4
I
C
Rg = 10 W
0.35
0.30
2
0
50
100
150
200
0
20 40 60 80 100 120 140 160 180 200
Q , GATE CHARGE (nC)
G
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1000
100
td
off
E
(off)
t
f
10
1
V
CE
= 400 V
= 15 V
T = 175°C
V
V
= 400 V
= 15 V
CE
V
GE
GE
J
I
C
= 40 A
Rg = 10 W
0.2
0
Rg = 10 W
25
50
75
100 125
150 175
200
10
20
30
40
50
60
70
80
90
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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4
NGTB40N65IHRTG
TYPICAL CHARACTERISTICS
2.0
1000
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
V
= 400 V
= 15 V
CE
t
E
off
GE
d(off)
I
C
= 40 A
t
f
T = 175°C
J
10
1
V
V
= 400 V
= 15 V
CE
GE
T = 175°C
J
Rg = 10 W
0.2
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. Rg
10K
1.2
1.0
0.8
0.6
0.4
V
I
= 15 V
= 40 A
V
V
= 400 V
= 15 V
= 40 A
GE
CE
C
GE
Rg = 10 W
T = 175°C
J
I
C
E
off
T = 175°C
J
t
d(off)
1K
100
10
t
f
0.2
0
0
10
20
30
40
50
60
70
150 200 250 300 350 400 450 500 550 600
R , GATE RESISTOR (W)
G
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. Rg
Figure 16. Switching Loss vs. VCE
1000
1000
100
10
100 ms
50 ms
t
1 ms
d(off)
dc operation
t
f
100
Single Nonrepetitive
V
= 15 V
= 40 A
GE
Pulse T = 25°C
C
1
I
C
Curves must be derated
linearly with increase
in temperature
Rg = 10 W
T = 175°C
J
10
0.1
200
300
400
500
600
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
NGTB40N65IHRTG
TYPICAL CHARACTERISTICS
2.75
1K
2.50
2.25
2.00
1.75
1.50
100
I
I
I
= 60 A
= 40 A
= 20 A
C
C
10
1
C
V
T
= 15 V
= 175°C
GE
C
1.25
1.00
1
10
100
1K
−75
−25
25
75
125
175
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 19. Reverse Bias Safe Operating Area
Figure 20. Forward Voltage vs. Junction
Temperature
NGTB40N65IHRTG IGBT die self-heating
square-wave duty cycle transient thermal response
1
R
= 0.371
q
JC
50% Duty Cycle
0.1
Duty Factor = t1/t2
X Z
20%
10%
5%
Peak T = P
+ T
JC C
q
J
DM
Cauer RC network
R (°C/W) C (J/W)
i
i
0.082743
0.068924
0.100773
0.067215
0.043703
0.007505
0.00163
0.00636
0.01272
0.03118
0.15571
3.90529
IMPORTANT NOTES about Cauer ladders:
Time constants are not simple RC products.
2%
0.01
Amplitudes of mathematical solution (Foster R’s) are not the
same as the Cauer R’s, although their sum is the same.
The network CAN be extended by adding rungs to represent
external system properties (PCB, external heatsinks, etc.)
Foster RC model
R (°C/W) C (J/W) tau (s)
i
i
0.001
0.0414 0.0024
0.0001
0.0388 0.0081 0.000316
Single Pulse
IMPORTANT NOTES about Foster ladders:
0.001
0.003162
0.01
0.0322 0.0310
0.1010 0.0313
0.1350 0.0741
Each rung is exactly characterized by its RC−product time
constant, t . The amplitudes of each term
i
sum(R (1−exp(−t/t ))) are the resistances.
i
i
This network CAN NOT be extended by adding more rungs!
0.0225
1.4067 0.031623
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
on-pulse width [s]
Figure 21. IGBT Transient Thermal Impedance
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6
NGTB40N65IHRTG
Figure 22. Test Circuit for Switching Characteristics
Figure 23. Definition of Turn Off Waveform
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−3P−3LD
CASE 340AB−01
ISSUE A
DATE 30 OCT 2007
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
SEATING
A
PLANE
B
B
C
U
Q
E
4
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
SCALE 1:1
A
K
MILLIMETERS
L
DIM MIN
NOM
19.90
15.60
4.80
MAX
20.10
15.80
5.00
A
B
C
D
E
F
19.70
15.40
4.60
0.80
1.45
1.80
1.00
1.20
1.50
1.65
(3°)
2.00
2.20
P
G
H
J
5.45 BSC
1.40
1.20
0.55
1.60
0.75
0.60
K
L
19.80
18.50
3.30
20.00
18.70
3.50
20.20
18.90
3.70
1
2
3
F
H
J
P
Q
U
W
3X D
3.10
3.20
3.50
W
M
S
A B
0.25
5.00 REF
3.00
2.80
3.20
G
G
GENERIC MARKING
DIAGRAM*
STYLE 1:
PIN 1. BASE
STYLE 2:
STYLE 3:
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. ANODE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3. SOURCE
4. DRAIN
4. CATHODE
xxxxxG
AYWW
xxxxx = Specific Device Code
G
A
Y
= Pb−Free Package
= Assembly Location
= Year
WW
= Work Week
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON25095D
TO−3P−3LD
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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