NGTB50N120FL2WAG [ONSEMI]
IGBT, 1200 V Field Stop II, 50 A;
| 型号： | NGTB50N120FL2WAG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 1200 V Field Stop II, 50 A 双极性晶体管 |
| 文件： | 总11页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB50N120FL2WAG
IGBT - Field Stop II / 4 Lead
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. In addition, this new
device is packaged in a TO−247−4L package that provides significant
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reduction in E Losses compared to standard TO−247−3L package.
on
The IGBT is well suited for UPS and solar applications. Incorporated
into the device is a soft and fast co−packaged free wheeling diode with
a low forward voltage.
50 A, 1200 V
VCEsat = 2.25 V
Features
Eon = 2.15 mJ
• Extremely Efficient Trench with Field Stop Technology
C
• T
= 175°C
Jmax
• Improved Gate Control Lowers Switching Losses
• Separate Emitter Drive Pin
• TO−247−4L for Minimal E Losses
• Optimized for High Speed Switching
• These are Pb−Free Devices
on
G
E1
E
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Neutral Point Clamp Topology
TO−247
CASE 340AR
4 LEAD
ABSOLUTE MAXIMUM RATINGS
C
E
E1
Rating
Symbol
Value
Unit
V
G
Collector−emitter voltage
V
CES
1200
Collector current
@ TC = 25°C
@ TC = 100°C
I
C
200
50
A
MARKING DIAGRAM
Pulsed collector current, T
I
200
A
A
A
V
pulse
CM
limited by T
Jmax
Diode forward current @ TC = 25°C
@ TC = 100°C
I
F
200
50
50N120FL2
AYWWG
Diode pulsed current, T
limited
I
200
pulse
FM
by T
Jmax
Gate−emitter voltage
Transient gate−emitter voltage
(T = 5 ms, D < 0.10)
V
20
30
GE
pulse
Power Dissipation
@ TC = 25°C
@ TC = 100°C
P
536
268
W
D
50N120FL2 = Specific Device Code
A
Y
= Assembly Location
= Year
Operating junction temperature range
Storage temperature range
T
−55 to +175
−55 to +175
260
°C
°C
°C
J
WW
G
= Work Week
= Pb−Free Package
T
stg
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
Package
Shipping
NGTB50N120FL2WAG TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2016 − Rev. 0
NGTB50N120FL2WA/D
NGTB50N120FL2WAG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.28
0.50
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 50 A
V
CEsat
−
−
2.25
2.80
2.60
−
GE
C
V
GE
= 15 V, I = 50 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
I
−
−
−
4.0
0.4
−
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
CE
J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V, V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
Input capacitance
C
−
−
−
−
−
−
7500
136
230
313
73
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
nC
ns
Q
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 50 A, V = 15 V
ge
gc
C
GE
146
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
28
39
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
150
95
T = 25°C
d(off)
J
V
CC
= 600 V, I = 50 A
C
Fall time
t
f
R = 10 W
g
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
2.15
1.4
3.45
28
V
= 15V
on
off
GE
E
ts
t
t
d(on)
t
r
40
Turn−off delay time
165
195
2.8
3.0
5.8
T = 175°C
d(off)
J
V
CC
= 600 V, I = 50 A
C
Fall time
t
f
R = 10 W
g
mJ
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
V
= 15V
on
off
GE
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 50 A
V
F
−
−
2.18
2.55
2.50
−
V
GE
F
V
GE
= 0 V, I = 50 A, T = 175°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
−
−
−
281
2.6
17
−
−
−
−
−
−
ns
mc
A
rr
T = 25°C
J
Q
I = 50 A, V = 400 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
t
rr
420
5.4
23
ns
mc
A
T = 175°C
J
Q
I = 50 A, V = 400 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB50N120FL2WAG
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
200
V
= 20 V − 15 V
V
GE
= 20 V − 15 V
GE
180
13 V
160
140
13 V
T = 25°C
T = 150°C
J
J
120
100
80
11 V
10 V
11 V
10 V
60
60
9 V
8 V
40
40
9 V
8 V
7 V
6
20
0
20
0
7 V
5
0
0
0
1
2
3
4
6
7
8
0
1
2
3
4
5
7
8
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. Output Characteristics
Figure 2. Output Characteristics
200
180
160
140
120
100
80
200
180
160
140
120
100
80
V
GE
=
V
GE
= 20 V − 15 V
T = −55°C
J
20 V − 13 V
13 V
T = 175°C
J
11 V
10 V
11 V
10 V
60
60
9 V
8 V
40
40
7 V
6
9 V
20
0
20
0
7 V and 8 V
1
2
3
4
5
6
7
8
0
1
2
3
4
5
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
200
180
160
140
120
4.0
3.5
3.0
2.5
2.0
I
C
= 75 A
100
80
60
40
20
0
I
I
= 50 A
= 25 A
C
C
1.5
1.0
T = 175°C
J
T = 25°C
J
2
4
6
8
10
12
14
16
18
−75 −50 −25
0
25 50 75 100 125 150 175 200
V
GE
, GATE−EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
NGTB50N120FL2WAG
TYPICAL CHARACTERISTICS
1M
100K
10K
1K
100
T = 25°C
J
T = 25°C
J
T = 175°C
J
90
80
70
60
50
40
30
20
C
C
ies
oes
100
10
C
res
10
0
0
0
0
10 20 30 40 50 60 70 80 90 100
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
16
14
12
10
3.5
3.0
2.5
2.0
V
V
I
= 600 V
= 15 V
CE
GE
= 40 A
C
Rg = 10 W
E
E
on
8
6
4
off
V
V
= 600 V
= 15 V
CE
1.5
1.0
GE
2
0
I
C
= 50 A
50
100
150
200
250
300
350
0
20 40
60 80 100 120 140 160 180 200
Q , GATE CHARGE (nC)
G
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
V
= 600 V
= 15 V
E
off
CE
GE
T = 175°C
J
t
d(off)
Rg = 10 W
t
f
E
on
t
r
t
d(on)
10
1
V
V
= 600 V
= 15 V
CE
GE
I
C
= 50 A
Rg = 10 W
0.5
0
20 40
60 80 100 120 140 160 180 200
10
20
30
40
50
60
70
80
90
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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4
NGTB50N120FL2WAG
TYPICAL CHARACTERISTICS
16
1000
100
V
V
= 600 V
= 15 V
CE
14
12
10
8
GE
E
on
t
f
T = 175°C
J
I
C
= 50 A
t
d(off)
t
r
t
d(on)
6
10
1
V
V
= 600 V
= 15 V
E
off
CE
4
GE
T = 175°C
J
2
0
Rg = 10 W
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
R , GATE RESISTOR (W)
G
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
4.5
4.0
3.5
3.0
1000
V
= 15 V
GE
E
E
on
T = 175°C
J
t
d(off)
I
C
= 50 A
Rg = 10 W
t
f
off
2.5
2.0
1.5
1.0
100
t
r
V
V
= 600 V
= 15 V
CE
t
d(on)
GE
T = 175°C
J
0.5
0
I
C
= 50 A
10
0
10
20
30
40
50
60
70
350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
R , GATE RESISTOR (W)
G
V
CE
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
1000
100
10
V
= 15 V
GE
T = 175°C
J
I
C
= 50 A
Rg = 10 W
t
f
dc operation
t
d(off)
50 ms
100
100 ms
Single Nonrepetitive
t
r
Pulse T = 25°C
C
1 ms
1
Curves must be derated
linearly with increase
in temperature
t
d(on)
10
0.1
350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
1
10
100
1K
10K
V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
NGTB50N120FL2WAG
TYPICAL CHARACTERISTICS
450
400
350
300
250
200
1000
100
V
R
= 400 V
T = 175°C, I = 50 A
J
F
10
1
T = 25°C, I = 50 A
J
F
150
100
50
V
GE
= 15 V, T = 175°C
C
1
10
100
1K
10K
100
300
500
700
900
1100 1300
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
7
6
70
60
50
40
30
V
R
= 400 V
T = 175°C, I = 50 A
J
F
T = 175°C, I = 50 A
J
F
5
4
V
R
= 400 V
T = 25°C, I = 50 A
J
F
T = 25°C, I = 50 A
J
F
3
2
20
10
100
300
500
700
900
1100
1300
100
300
500
700
900
1100 1300
di /dt, DIODE CURRENT SLOPE (A/ms)
F
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
3.5
3.0
2.5
2.0
I = 75 A
F
I = 50 A
F
I = 25 A
F
1.5
1.0
−75 −50 −25
0
25 50 75 100 125 150 175 200
T , JUNCTION TEMPERATURE (°C)
J
Figure 23. VF vs. TJ
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6
NGTB50N120FL2WAG
TYPICAL CHARACTERISTICS
225
200
175
150
Ramp, T = 110°C
C
125
100
75
Square, T = 80°C
Ramp, T = 80°C
C
C
Square, T = 110°C
C
50
25
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
1
R
= 0.28
q
JC
50% Duty Cycle
0.1
20%
10%
5%
R (°C/W) C (J/W)
i
i
R
C
R
C
R
Case
Junction
1
1
2
2
n
0.0000
0.0536
0.0340
0.0558
0.1059
0.0262
0.0000
0.0059
0.0294
0.0567
0.0944
1.2083
0.01
0.001
2%
C
n
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
C
q
J
DM
JC
Single Pulse
0.000001 0.00001
0.0001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 25. IGBT Transient Thermal Impedance
1
R
= 0.50
q
JC
50% Duty Cycle
R (°C/W) C (J/W)
i
i
0.017265 0.000058
0.023397 0.000427
0.025095 0.001260
0.073345 0.001363
0.093146 0.003395
0.043705 0.022881
0.060153 0.052571
0.127694 0.078312
0.246682 0.128193
0.070293 1.422617
20%
10%
5%
0.1
R
C
R
R
n
Case
Junction
1
2
2%
0.01
Single Pulse
C
C
n
1
2
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 26. Diode Transient Thermal Impedance
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7
NGTB50N120FL2WAG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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8
NGTB50N120FL2WAG
Figure 29. Definition of Turn Off Waveform
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247 4−LEAD
CASE 340AR
ISSUE A
DATE 07 MAY 2020
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON97044F
TO−247 4−LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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VISHAY
SI9137LG
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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