NGTB50N120FL2WG [ONSEMI]
IGBT, 1200V 50A FS2 Solar/UPS;
| 型号： | NGTB50N120FL2WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 1200V 50A FS2 Solar/UPS 栅 双极性晶体管 |
| 文件： | 总9页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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IGBT - Field Stop II
NGTB50N120FL2WG
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
50 A, 1200 V
VCEsat = 2.20 V
Eoff = 1.40 mJ
C
G
Features
• Extremely Efficient Trench with Field Stop Technology
E
• T
= 175°C
Jmax
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 10 ms Short Circuit Capability
• These are Pb−Free Devices
G
C
E
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
TO−247
CASE 340AM
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter Voltage
Collector Current
Symbol
Value
Unit
V
V
CES
1200
I
C
A
50N120FL2
AYWWG
@ T = 25°C
100
50
C
@ T = 100°C
C
Pulsed Collector Current, T
I
200
A
A
pulse
CM
Limited by T
Jmax
Diode Forward Current
@ T = 25°C
I
F
100
50
C
@ T = 100°C
C
50N120FL2 = Specific Device Code
Diode Pulsed Current, T
Limited
I
200
A
V
pulse
FM
A
Y
= Assembly Location
= Year
by T
Jmax
Gate−emitter Voltage
Transient Gate−emitter Voltage
(T = 5 ms, D < 0.10)
V
20
30
GE
WW
G
= Work Week
= Pb−Free Package
pulse
Power Dissipation
P
D
W
@ T = 25°C
535
267
C
ORDERING INFORMATION
@ T = 100°C
C
Short Circuit Withstand Time
T
10
ms
°C
SC
Device
NGTB50N120FL2WG
Package
Shipping
30 Units / Rail
V
= 15 V, V = 500 V, T ≤ 150°C
GE
CE J
TO−247
(Pb−Free)
Operating Junction Temperature
Range
T
−55 to +175
J
Storage Temperature Range
T
−55 to +175
°C
°C
stg
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
October, 2021 − Rev. 6
NGTB50N120FL2W/D
NGTB50N120FL2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.28
0.5
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 50 A
V
CEsat
−
−
2.20
2.60
2.40
−
GE
C
V
GE
= 15 V, I = 50 A, T = 175°C
C
J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
0.1
2.0
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
7383
233
139
311
64
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 50 A, V = 15 V
ge
gc
C
GE
155
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
118
48
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
282
113
4.40
1.40
5.80
114
49
T = 25°C
d(off)
J
V
= 600 V, I = 50 A
CC
C
Fall time
t
f
R = 10 W
GE
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
V
= 0 V/ 15V
E
E
mJ
ns
on
off
E
ts
t
t
d(on)
t
r
Turn−off delay time
298
243
5.65
3.26
8.91
T = 175°C
d(off)
J
V
= 600 V, I = 50 A
C
CC
Fall time
t
f
R = 10 W
GE
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
V
= 0 V/ 15V
E
E
mJ
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 50 A
V
F
−
−
2.00
2.55
2.60
−
V
GE
F
V
GE
= 0 V, I = 50 A, T = 175°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
T = 25°C
t
−
−
−
−
−
−
256
2.7
19
−
−
−
−
−
−
ns
mc
A
J
rr
I = 50 A, V = 400 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
T = 175°C
t
rr
400
5.75
27
ns
mc
A
J
I = 40 A, V = 400 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
200
T = 150°C
T = 25°C
J
J
180
160
140
120
100
80
V
GE
= 20 V
to 13 V
V
GE
= 20 V
to 13 V
11 V
10 V
11 V
10 V
9 V
60
60
40
40
9 V
8 V
8 V
7 V
20
20
7 V
0
0
0
1
2
3
4
5
6
7
8
1
2
3
, COLLECTOR−EMITTER VOLTAGE (V)
CE
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
Figure 1. Output Characteristics
Figure 2. Output Characteristics
200
180
160
140
120
100
80
200
180
160
140
120
100
80
T = −55°C
J
V
= 20 V
to 13 V
GE
11 V
10 V
60
60
40
40
T = 150°C
J
7 V
9 V
8 V
20
20
T = 25°C
J
0
0
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
9
10 11 12 13
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
4.50
4.00
100000
10000
1000
100
I
= 100 A
C
C
ies
3.50
3.00
I
= 50 A
= 25 A
C
2.50
2.00
1.50
1.00
0.50
0.00
I
C
C
oes
C
res
10
T = 25°C
J
1
−75 −50 −25
0
25 50 75 100 125 150 175 200
0
10 20
30 40 50
60 70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs TJ
Figure 6. Typical Capacitance
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3
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
10
0
16
14
12
10
T = 25°C
J
V
CE
= 600 V
T = 150°C
J
8
6
4
V
V
= 600 V
= 15 V
GE
CE
2
0
I
C
= 50 A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
100
150
200
250
300
350
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
6
5
4
3
2
1
0
1000
100
10
E
on
t
t
d(off)
t
f
d(on)
E
off
t
r
V
V
= 600 V
= 15 V
= 50 A
CE
V
V
= 600 V
= 15 V
= 50 A
CE
GE
GE
I
C
I
C
Rg = 10 W
120 140
T , JUNCTION TEMPERATURE (°C)
Rg = 10 W
120 140 160
T , JUNCTION TEMPERATURE (°C)
0
20
40
60
80
100
160
0
20
40
60
80
100
J
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
12
10
8
1000
100
10
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
t
d(off)
Rg = 10 W
E
on
t
f
t
d(on)
6
E
off
4
t
r
V
V
= 600 V
= 15 V
= 50 A
CE
GE
2
I
C
Rg = 10 W
0
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65 75
85
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
18
16
14
12
10
8
10000
V
V
= 600 V
= 15 V
V
V
= 600 V
= 15 V
CE
CE
GE
GE
T = 150°C
T = 150°C
J
J
t
I
C
= 50 A
I = 50 A
C
d(off)
E
on
1000
100
10
t
d(on)
t
f
6
E
off
4
t
r
2
0
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
1000
9
8
7
6
5
4
3
2
1
0
t
d(off)
E
on
t
f
t
d(on)
100
10
E
off
t
r
V
= 15 V
V
GE
= 15 V
GE
T = 150°C
T = 150°C
J
J
I
C
= 50 A
I = 50 A
C
Rg = 10 W
600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
Rg = 10 W
600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
CE
350 400 450 500 550
350 400 450 500 550
V
CE
V
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
1000
100
dc operation
50 ms
10
1
100 ms
Single Nonrepetitive
10
1
Pulse T = 25°C
1 ms
C
Curves must be derated
linearly with increase
in temperature
V
V
= 15 V, T = 125°C
C
GE
0.1
1
10
100
1000
10000
1
10
100
1000
10000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
450
400
350
300
250
200
150
7
6
5
4
T = 175°C, I = 50 A
J
F
T = 175°C, I = 50 A
J
F
T = 25°C, I = 50 A
T = 25°C, I = 50 A
J
F
J
F
3
2
100
50
100
300
500
700
900
1100
1300
100
300
500
700
900
1100 1300
di /dt, DIODE CURRENT SLOPE (A/m)
F
di /dt, DIODE CURRENT SLOPE (A/m)
F
Figure 19. trr vs. diF/dt (VR = 400 V)
Figure 20. Qrr vs. diF/dt (VR = 400 V)
70
60
50
40
30
3.5
3.0
2.5
2.0
I = 75 A
F
T = 175°C, I = 50 A
J
F
I = 50 A
F
I = 25 A
F
T = 25°C, I = 50 A
J
F
1.5
1.0
20
10
100
300
500
700
900
1100
1300
−75 −50 −25
0
25 50 75 100 125 150 175 200
di /dt, DIODE CURRENT SLOPE (A/m)
F
T , JUNCTION TEMPERATURE (°C)
J
Figure 21. Irm vs. diF/dt (VR = 400 V)
Figure 22. VF vs. TJ
250
V
CE
= 600 V, R = 10 W, V = 0/15 V
G GE
T
C
= 80°C
200
150
100
50
T
C
= 110°C
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 23. Collector Current vs. Switching
Frequency
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6
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
1
0.1
R
= 0.28
q
JC
50% Duty Cycle
20%
10%
5%
R
C
R
C
R
Junction
Case
1
1
2
2
n
n
R (°C/W) C (J/°C)
i
i
0.048747 0.006487
0.043252 0.023120
0.051703 0.061163
0.107932 0.092651
0.025253 1.252250
0.01
2%
C
0.001
0.0001
Duty Factor = t /t
1
2
Single Pulse
1E−05
Peak T = P
x Z
+ T
JC C
q
J
DM
1E−06
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 24. IGBT Transient Thermal Impedance
1
0.1
R
= 0.50
q
JC
50% Duty Cycle
20%
10%
R (°C/W) C (J/°C)
i
i
R
R
R
Junction
Case
1
1
2
n
5%
2%
0.007703 0.000130
0.010613 0.000942
0.010097 0.003132
0.032329 0.003093
0.01
0.001
0.006758
0.022635
0.046791
0.044179
Single Pulse
C
C
C
n
2
0.083870 0.119232
Duty Factor = t /t
1
2
0.703706
0.460033
0.044938
0.217376
Peak T = P
x Z
+ T
JC C
q
J
DM
1E−06
1E−05
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 25. Diode Transient Thermal Impedance
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AM
ISSUE C
DATE 07 SEP 2021
GENERIC
MARKING DIAGRAMS*
XXXXXXXXX
AYWWG
XXXXXXXXX
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON77284F
TO−247
PAGE 1 OF 1
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