NGTB60N60SWG [ONSEMI]
IGBT;
| 型号： | NGTB60N60SWG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 双极性晶体管 |
| 文件： | 总8页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB60N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
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60 A, 600 V
Features
V
CEsat = 2.0 V
• Low Saturation Voltage using Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices
Eoff = 0.60 mJ
C
Typical Applications
G
• Inverter Welding
ABSOLUTE MAXIMUM RATINGS
E
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
600
Collector current
@ TC = 25°C
A
120
60
@ TC = 100°C
Diode forward current
@ TC = 25°C
IF
A
G
120
60
TO−247
CASE 340L
STYLE 4
C
@ TC = 100°C
E
Pulsed collector current, T
ICM
IFM
240
A
A
pulse
limited by T
Jmax
Diode pulsed current, T
limited
240
pulse
MARKING DIAGRAM
by T
Jmax
Gate−emitter voltage
VGE
PD
$20
V
Power Dissipation
W
@ TC = 25°C
@ TC = 100°C
298
119
Operating junction temperature range
Storage temperature range
T
−55 to +150
−55 to +150
260
°C
°C
°C
60N60S
AYWWG
J
T
stg
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB60N60SWG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
July, 2014 − Rev. 0
NGTB60N60SW/D
NGTB60N60SWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.42
1.00
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
600
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 60 A
V
CEsat
−
−
2.0
2.6
2.5
−
GE
C
V
GE
= 15 V, I = 60 A, T = 150°C
C J
Gate−emitter threshold voltage
V
V
= V , I = 150 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 600 V
I
−
−
−
−
0.2
2
mA
GE
CE
CES
V
GE
= 0 V, V = 600 V, T 150°C
CE J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
4112
169
107
173
38
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 480 V, I = 60 A, V = 15 V
ge
gc
C
GE
Q
87
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
87
48
d(on)
t
r
T = 25°C
J
Turn−off delay time
V
t
180
70
d(off)
= 400 V, I = 60 A
CC
C
R = 10 W
g
Fall time
t
f
V
= 0 V/ 15 V
GE
Turn−off switching loss
Turn−on switching loss
Turn−on delay time
Rise time
E
E
0.60
1.41
85
mJ
ns
off
on
t
t
d(on)
t
50
r
T = 150°C
J
Turn−off delay time
V
186
91
d(off)
= 400 V, I = 60 A
CC
C
R = 10 W
g
Fall time
t
f
V
= 0 V/ 15 V
GE
Turn−off switching loss
Turn−on switching loss
DIODE CHARACTERISTIC
E
E
1.11
1.77
mJ
V
off
on
Forward voltage
V
= 0 V, I = 30 A
V
F
1.98
2.10
2.30
GE
F
V
GE
= 0 V, I = 30 A, T = 150°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
T = 25°C
t
76
291
7
ns
nc
A
J
rr
I = 30 A, V = 200 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB60N60SWG
TYPICAL CHARACTERISTICS
240
220
200
180
160
140
120
100
80
240
V
GE
= 20 − 17 V
V
= 20 − 15 V
GE
13 V
220
15 V
13 V
200
T = 150°C
J
T = 25°C
180
J
160
140
120
100
11 V
10 V
11 V
10 V
9 V
80
60
40
60
9 V
8 V
40
8 V
7 V
7 V
20
0
20
0
0
1
2
3
4
5
6
7
8
0
0
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
240
220
200
180
160
140
120
100
240
220
200
180
160
140
120
100
80
V
= 20 − 13 V
GE
T = −55°C
J
T = 25°C
J
T = 150°C
J
11 V
10 V
80
60
40
60
40
9 V
8 V
20
0
20
0
7 V
6
0
1
2
3
4
5
7
8
2
4
6
8
10
12
14
16
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
10,000
1000
C
I
C
= 80 A
ies
I
= 60 A
= 40 A
C
C
I
T = 25°C
J
C
oes
I
= 20 A
C
100
10
C
res
1.0
0.5
−75 −50 −25
0
25 50 75 100 125 150 175 200
10
20 30 40
50 60 70 80 90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB60N60SWG
TYPICAL CHARACTERISTICS
110
100
90
80
70
60
50
40
30
20
20
18
16
T = 25°C
J
14
12
10
8
T = 150°C
J
V
V
= 480 V
= 15 V
= 60 A
CE
6
GE
4
I
C
2
0
10
0
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
0
20 40 60 80 100 120 140 160 180 200
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
2.5
2.0
1.5
1.0
1000
V
V
I
= 400 V
= 15 V
= 60 A
CE
V
V
= 400 V
= 15 V
CE
GE
GE
C
I
C
= 60 A
Rg = 10 W
Rg = 10 W
E
E
on
t
t
d(off)
d(on)
100
off
t
f
t
r
0.5
0
10
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140 160
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
3.0
2.5
2.0
1.5
1.0
1000
E
on
V
V
= 400 V
= 15 V
CE
V
V
= 400 V
= 15 V
CE
GE
GE
T = 150°C
J
T = 150°C
J
Rg = 10 W
t
Rg = 10 W
d(off)
t
f
E
off
100
t
d(on)
t
r
0.5
0
10
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB60N60SWG
TYPICAL CHARACTERISTICS
7
6
5
4
3
2
1000
V
V
= 400 V
= 15 V
E
CE
on
GE
t
d(off)
T = 150°C
J
t
d(on)
I
C
= 60 A
t
f
100
E
off
t
r
V
V
= 400 V
= 15 V
CE
GE
T = 150°C
J
1
0
I
C
= 60 A
10
5
15
25
35
45
55
65
75
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
3.5
3.0
1000
V
= 15 V
GE
V
= 15 V
GE
T = 150°C
J
T = 150°C
J
E
E
I
C
= 60 A
on
I
C
= 60 A
Rg = 10 W
2.5
2.0
1.5
1.0
Rg = 10 W
t
t
d(off)
t
f
100
off
d(on)
t
r
0.5
0
10
175 225 275
325
375 425
475
525 575
175 225
V
275
325
375
425 475
525 575
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
10
1000
100
50 ms
100 ms
Single Nonrepetitive
10
1
V
T
= 15 V
= 150°C
GE
Pulse T = 25°C
C
1 ms
C
1
Curves must be derated
linearly with increase in
temperature
dc operation
0.1
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. IC vs. VCE
Figure 18. IC vs. VCE
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5
NGTB60N60SWG
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
20%
R
= 0.42
q
JC
10%
5%
R
C
R
C
R
C
Junction
Case
1
1
2
2
n
R (°C/W) C (J/°C)
i
i
2%
0.034317 0.002914
0.069684 0.004538
0.027029
0.128158
0.01
0.036997
0.024675
n
0.140642 0.071103
1.610308
0.001
0.019638
Duty Factor = t /t
1
2
Single Pulse
0.000001
Peak T = P
x Z
+ T
JC
q
J
DM
C
0.0001
0.00001
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 19. IGBT Transient Thermal Impedance
1
50% Duty Cycle
20%
R
= 1.00
q
JC
R (°C/W) C (J/°C)
i
i
0.015509 0.000064
0.020310 0.000492
0.022591 0.001400
0.050667 0.001974
0.093366 0.003387
R
C
R
C
R
Junction
Case
1
1
2
n
10%
5%
0.1
0.005121
0.023740
0.057525
0.195285
0.133203
0.173839
2%
C
2
n
Duty Factor = t /t
0.125795
2.501137
0.251384
0.039982
1
2
Peak T = P
x Z
+ T
JC
q
J
DM
C
Single Pulse
0.000001
0.01
0.00001
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 20. Diode Transient Thermal Impedance
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
STYLE 1:
PIN 1. GATE
STYLE 2:
PIN 1. ANODE
2. CATHODE (S)
STYLE 3:
PIN 1. BASE
2. COLLECTOR
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
A
Y
= Assembly Location
= Year
2. DRAIN
3. SOURCE
4. DRAIN
3. ANODE 2
4. CATHODES (S)
3. EMITTER
4. COLLECTOR
4. COLLECTOR
WW
G
= Work Week
= Pb−Free Package
STYLE 5:
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. GATE
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
4. ANODE
4. MAIN TERMINAL 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15080C
TO−247
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2021
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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