NGTB60N65FL2WG [ONSEMI]
IGBT，650V，60A，场截止 2 IGBT;
| 型号： | NGTB60N65FL2WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，60A，场截止 2 IGBT 局域网 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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IGBT - Field Stop II
NGTB60N65FL2WG
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
60 A, 650 V
VCEsat = 1.64 V
Eoff = 0.66 mJ
C
Features
• Extremely Efficient Trench with Field Stop Technology
G
• T
= 175°C
Jmax
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
E
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
G
C
E
TO−247
CASE 340AM
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter Voltage
Collector Current
Symbol
V
Value
Unit
V
MARKING DIAGRAM
650
CES
I
C
A
@ T = 25°C
100
60
C
@ T = 100°C
C
Diode Forward Current
I
F
A
60N65FL2
AYWWG
@ T = 25°C
100
60
C
@ T = 100°C
C
Diode Pulsed Current
I
240
240
5
A
A
FM
T
Limited by T Max
PULSE
J
Pulsed Collector Current, T
I
pulse
CM
Limited by T
Jmax
Short−circuit Withstand Time
t
ms
SC
60N65FL2 = Specific Device Code
V
J
= 15 V, V = 400 V,
GE
CE
A
Y
= Assembly Location
= Year
T ≤ +150°C
Gate−emitter Voltage
V
GE
20
30
V
WW
G
= Work Week
= Pb−Free Package
Transient Gate−emitter Voltage
(T
PULSE
= 5 ms, D < 0.10)
Power Dissipation
P
W
D
ORDERING INFORMATION
@ T = 25°C
595
265
C
@ T = 100°C
C
Device
NGTB60N65FL2WG
Package
Shipping
30 Units / Rail
Operating Junction Temperature
Range
T
−55 to +175
°C
J
TO−247
(Pb−Free)
Storage Temperature Range
T
−55 to +175
°C
°C
stg
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2021 − Rev. 2
NGTB60N65FL2W/D
NGTB60N65FL2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.28
0.62
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
650
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 60 A
V
CEsat
1.50
−
1.64
2.00
2.00
−
GE
C
V
GE
= 15 V, I = 60 A, T = 175°C
C
J
Gate−emitter threshold voltage
V
V
= V , I = 350 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 650 V
I
−
−
−
5.0
0.1
−
mA
GE
CE
CES
V
GE
= 0 V, V = 650 V, T 175°C
CE
J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
7193
311
202
318
65
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 480 V, I = 60 A, V = 15 V
ge
gc
C
GE
163
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
117
53
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
265
75
T = 25°C
d(off)
J
V
= 400 V, I = 60 A
CC
C
Fall time
t
f
R = 10 W
GE
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
V
= 0 V/ 15 V
E
E
1.59
0.66
2.25
113
55
mJ
ns
on
off
E
ts
t
t
d(on)
t
r
Turn−off delay time
277
1.0
T = 150°C
d(off)
J
V
= 400 V, I = 60 A
C
CC
Fall time
t
f
R = 10 W
GE
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
V
= 0 V/ 15 V
E
E
2.0
mJ
on
off
1.1
E
ts
3.1
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 60 A
V
F
1.50
−
2.13
2.26
2.80
−
V
GE
F
V
GE
= 0 V, I = 60 A, T = 175°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
−
−
−
96
0.39
6.8
−
−
−
−
−
−
ns
mC
A
rr
T = 25°C
J
Q
I = 60 A, V = 400 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
t
rr
177
1.53
13
ns
mC
A
T = 175°C
J
Q
I = 60 A, V = 400 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB60N65FL2WG
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
200
180
V
= 20 V
to 15 V
V
= 20 V
to 13 V
GE
GE
T = 25°C
J
13 V
160
140
120
100
80
T = 150°C
J
11 V
11 V
10 V
9 V
10 V
9 V
60
60
40
40
8 V
7 V
8 V
7 V
20
0
20
0
0
1
2
3
4
5
6
7
8
0
0
0
1
2
3
4
5
6
7
8
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
200
180
160
140
120
100
80
V
GE
= 20 V
to 13 V
T = −55°C
J
140
120
100
80
11 V
10 V
60
60
40
T = 150°C
J
7 V
40
9 V
8 V
20
0
20
0
T = 25°C
J
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
9
10 11 12 13
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
2.25
2.00
1.75
1.50
100,000
10,000
1000
T = 25°C
J
C
ies
I = 60 A
F
I = 50 A
F
C
oes
100
C
res
I = 25 A
F
1.25
1.00
10
1
−75 −50 −25
0
25 50 75 100 125 150 175 200
10 20 30
40 50
60 70 80 90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VF vs. TJ
Figure 6. Typical Capacitance
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3
NGTB60N65FL2WG
TYPICAL CHARACTERISTICS
70
60
26
23
20
17
14
T
CE
= 480 V
50
40
30
20
11
8
V
CE
= 480 V
= 15 V
= 60 A
T = 150°C
5
J
V
GE
10
0
I
C
2
T = 25°C
J
−1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
100
150
200
250
300
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
2.5
2.0
1.5
1.0
1000
100
10
E
t
on
d(off)
t
d(on)
t
t
f
E
r
off
V
V
= 400 V
= 15 V
= 60 A
CE
V
V
= 400 V
= 15 V
CE
GE
0.5
0
GE
I
C
I
C
= 60 A
Rg = 10 W
Rg = 10 W
80 100 120 140 160 180
T , JUNCTION TEMPERATURE (°C)
0
20
40
60
80 100 120 140 160 180
0
20
40
60
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
6
5
4
3
2
1
0
1000
V
V
= 400 V
= 15 V
CE
GE
T = 150°C
J
t
t
d(off)
E
on
Rg = 10 W
t
f
100
10
d(on)
E
off
t
r
V
V
= 400 V
= 15 V
CE
GE
T = 150°C
J
Rg = 10 W
15 25
35
45
55
65
75
85
95 105
15 25
35
45
55
65
75
85
95 105
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB60N65FL2WG
TYPICAL CHARACTERISTICS
10,000
14
12
V
V
= 400 V
= 15 V
CE
V
V
= 400 V
= 15 V
CE
GE
GE
T = 150°C
J
t
t
T = 150°C
d(off)
J
I
C
= 60 A
10
8
I
C
= 60 A
1000
d(on)
E
on
t
r
6
t
f
100
10
4
E
off
2
0
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1000
V
= 15 V
GE
T = 150°C
J
I
C
= 60 A
E
E
t
t
on
d(off)
Rg = 10 W
d(on)
100
10
t
f
off
t
r
V
= 15 V
GE
T = 150°C
J
I
C
= 60 A
0.5
0
Rg = 10 W
150 200 250 300 350 400 450 500 550 600
, COLLECTOR−EMITTER VOLTAGE (V)
150 200 250 300 350 400 450 500 550 600
, COLLECTOR−EMITTER VOLTAGE (V)
V
V
CE
CE
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
10
1000
100
50 ms
dc operation
100 ms
Single Nonrepetitive
10
1
1 ms
Pulse T = 25°C
C
1
Curves must be derated
linearly with increase
in temperature
V
GE
= 15 V, T = 150°C
C
0.1
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB60N65FL2WG
TYPICAL CHARACTERISTICS
175
150
125
100
75
3.0
2.5
2.0
1.5
1.0
T = 175°C, I = 60 A
J
F
T = 175°C, I = 60 A
J
F
T = 25°C, I = 60 A
J
F
T = 25°C, I = 60 A
J
F
50
0.5
0
25
0
100
300
500
700
900
1100
100
300
500
700
900
1100
di /dt, DIODE CURRENT SLOPE (A/m)
F
di /dt, DIODE CURRENT SLOPE (A/m)
F
Figure 19. trr vs. diF/dt (VR = 400 V)
Figure 20. Qrr vs. diF/dt (VR = 400 V)
40
2.50
2.25
2.00
1.75
1.50
I = 60 A
F
35
30
25
20
15
10
T = 175°C, I = 60 A
J
F
I = 50 A
F
I = 25 A
F
T = 25°C, I = 60 A
J
F
1.25
1.00
5
0
100
300
500
700
900
1100
−75 −50 −25
0
25 50 75 100 125 150 175 200
di /dt, DIODE CURRENT SLOPE (A/m)
F
T , JUNCTION TEMPERATURE (°C)
J
Figure 21. Irm vs. diF/dt (VR = 400 V)
Figure 22. VF vs. TJ
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6
NGTB60N65FL2WG
TYPICAL CHARACTERISTICS
1
0.1
R
= 0.282
q
JC
50% Duty Cycle
20%
10%
5%
R
C
R
C
R
Junction
Case
1
1
2
2
n
n
R (°C/W) C (J/°C)
i
i
0.0270
0.0243
0.0225
0.0554
0.1121
0.0409
0.0037
0.0130
0.0445
0.0571
0.0892
0.7725
0.01
2%
C
0.001
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 23. IGBT Transient Thermal Impedance
1
50% Duty Cycle
R
= 0.622
q
JC
20%
0.1
10%
5%
R (°C/W) C (J/°C)
i
i
R
C
R
C
R
Junction
Case
1
1
2
n
0.006394 0.000156
0.007900 0.001266
0.008527 0.003708
2%
0.025491
0.022800
0.121738
0.363338
0.003923
0.013870
0.008214
0.275226
0.01
C
2
n
Single Pulse
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 24. Diode Transient Thermal Impedance
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AM
ISSUE C
DATE 07 SEP 2021
GENERIC
MARKING DIAGRAMS*
XXXXXXXXX
AYWWG
XXXXXXXXX
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON77284F
TO−247
PAGE 1 OF 1
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