NGTB75N60SWG [ONSEMI]
IGBT 600V/75A - Welding;
| 型号： | NGTB75N60SWG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 600V/75A - Welding 双极性晶体管 |
| 文件： | 总6页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB75N60SWG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
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Features
75 A, 600 V
CEsat = 1.70 V
EOFF = 1.0 mJ
• T
= 175°C
Jmax
V
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
C
Typical Applications
• Welding
G
ABSOLUTE MAXIMUM RATINGS
E
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
600
Collector current
@ TC = 25°C
A
100
75
@ TC = 100°C
Diode Forward Current
@ TC = 25°C
I
F
A
G
TO−247
CASE 340AL
100
75
C
@ TC = 100°C
E
Diode Pulsed Current
I
200
200
5
A
A
FM
T
Limited by T Max
PULSE
J
Pulsed collector current, T
I
pulse
CM
MARKING DIAGRAM
limited by T
Jmax
Short−circuit withstand time
= 15 V, V = 400 V,
t
ms
SC
V
GE
CE
T ≤ +150°C
J
Gate−emitter voltage
VGE
$20
$30
V
V
75N60S
AYWWG
Transient gate−emitter voltage
(T
PULSE
= 5 ms, D < 0.10)
Power Dissipation
PD
W
@ TC = 25°C
@ TC = 100°C
595
265
Operating junction temperature
range
T
−55 to +175
°C
J
A
Y
WW
G
= Assembly Location
= Year
= Work Week
Storage temperature range
T
stg
−55 to +175
260
°C
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NGTB75N60SWG
Package
Shipping
30 Units / Rail
TO−247
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2014 − Rev. 1
NGTB75N60SW/D
NGTB75N60SWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.28
0.62
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
600
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 75 A
V
CEsat
1.50
−
1.70
1.85
2.00
−
GE
C
V
GE
= 15 V, I = 75 A, T = 175°C
C J
Gate−emitter threshold voltage
V
V
= V , I = 350 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 600 V
I
−
−
−
−
0.1
4.0
mA
GE
CE
CES
V
GE
= 0 V, V = 600 V, T 175°C
CE J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
7500
300
190
310
60
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 480 V, I = 75 A, V = 15 V
ge
gc
C
GE
Q
150
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
110
48
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
270
70
T = 25°C
d(off)
J
V
= 400 V, I = 75 A
CC
C
Fall time
t
f
R = 10 W
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
V
= 0 V/ 15 V
E
E
1.5
1.0
2.5
100
50
mJ
ns
GE
on
off
E
ts
t
t
d(on)
t
r
Turn−off delay time
280
100
1.9
1.8
3.7
T = 150°C
d(off)
J
V
= 400 V, I = 75 A
CC
C
Fall time
t
f
R = 10 W
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
V
= 0 V/ 15 V
E
E
mJ
GE
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 75 A
V
F
1.70
−
2.20
2.40
2.90
−
V
GE
F
V
GE
= 0 V, I = 50 A, T = 175°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
80
0.40
8
−
−
−
ns
mC
A
rr
T = 25°C
J
Q
I = 75 A, V = 200 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NGTB75N60SWG
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
200
180
V
= 20 V
to 15 V
V
= 20 V
to 13 V
GE
GE
T = 25°C
J
13 V
160
140
120
100
80
T = 150°C
J
11 V
11 V
10 V
9 V
10 V
9 V
60
60
40
40
8 V
7 V
8 V
7 V
20
0
20
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
100,000
10,000
1000
70
60
T = 25°C
J
C
ies
50
40
30
20
C
oes
100
C
res
T = 150°C
J
10
1
10
0
T = 25°C
J
0
10 20 30
40 50
60 70 80 90 100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V , FORWARD VOLTAGE (V)
F
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Typical Capacitance
Figure 4. Diode Forward Characteristics
16
14
12
10
8
6
5
4
3
2
1
0
V
= 400 V
V
V
= 400 V
= 15 V
CE
CE
GE
T = 150°C
J
E
on
Rg = 10 W
E
off
6
4
V
CE
= 400 V
= 15 V
= 75 A
V
GE
2
I
C
0
0
50
100
150
200
250
300
350
15 25
35
45
55
65
75
85
95 105
Q , GATE CHARGE (nC)
G
I , COLLECTOR CURRENT (A)
C
Figure 5. Typical Gate Charge
Figure 6. Switching Loss vs. IC
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3
NGTB75N60SWG
TYPICAL CHARACTERISTICS
1000
1000
100
10
50 ms
t
t
d(off)
100 ms
1 ms
dc operation
t
f
100
d(on)
1
Single Nonrepetitive
t
r
V
V
= 400 V
= 15 V
CE
Pulse T = 25°C
C
GE
0.1
Curves must be derated
linearly with increase
in temperature
T = 150°C
J
Rg = 10 W
0.01
10
15 25
35
45
55
65
75
85
95 105
1
10
100
1000
I , COLLECTOR CURRENT (A)
C
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Switching Time vs. IC
Figure 8. Safe Operating Area
1
R
= 0.282
q
JC
50% Duty Cycle
0.1
20%
10%
5%
R
C
R
R
C
Junction
Case
1
1
2
n
R (°C/W) C (J/°C)
i
i
0.026955 0.003710
0.024252 0.013039
0.022476 0.044492
0.055395 0.057085
0.112157 0.089161
0.040934 0.772537
0.01
2%
C
2
n
0.001
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.000001
0.0001
0.00001
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 9. IGBT Transient Thermal Impedance
1
R
= 0.622
50% Duty Cycle
q
JC
20%
10%
5%
R (°C/W) C (J/°C)
i
i
0.1
0.007983 0.000125
0.010584 0.000945
0.011330 0.002791
R
C
R
C
R
Junction
Case
1
1
2
n
2%
0.026752
0.047379
0.103276
0.061288
0.065591
0.134666
0.152791
0.003738
0.006674
0.009683
0.051597
0.152460
0.234823
0.654488
0.01
C
Single Pulse
2
n
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 10. Diode Transient Thermal Impedance
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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