NGTG15N120FL2WG [ONSEMI]
IGBT 1200V 15A 太阳能/UPS;
| 型号： | NGTG15N120FL2WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 1200V 15A 太阳能/UPS 栅 双极性晶体管 |
| 文件： | 总11页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTG15N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications.
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Features
• Extremely Efficient Trench with Field Stop Technology
15 A, 1200 V
• T
= 175°C
Jmax
VCEsat = 2.0 V
• Optimized for High Speed Switching
• 10 ms Short Circuit Capability
• These are Pb−Free Devices
Eoff = 0.37 mJ
C
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
G
ABSOLUTE MAXIMUM RATINGS
E
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
IC
1200
V
A
Collector current
@ TC = 25°C
30
15
@ TC = 100°C
Pulsed collector current, T
ICM
60
A
V
pulse
G
TO−247
CASE 340AL
limited by T
Jmax
C
E
Gate−emitter voltage
Transient gate−emitter voltage
(T = 5 ms, D < 0.10)
VGE
$20
30
pulse
Power Dissipation
PD
W
MARKING DIAGRAM
@ TC = 25°C
@ TC = 100°C
294
147
Short Circuit Withstand Time
T
10
ms
°C
SC
V
GE
= 15 V, V = 500 V, T ≤ 150°C
CE J
Operating junction temperature
range
T
−55 to +175
J
G15N120FL2
AYWWG
Storage temperature range
T
−55 to +175
260
°C
°C
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTG15N120FL2WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
May, 2014 − Rev. 0
NGTG15N120FL2W/D
NGTG15N120FL2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.51
40
Unit
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−ambient
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 15 A
V
CEsat
−
−
2.00
2.40
2.40
−
GE
C
V
GE
= 15 V, I = 15 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.65
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
0.4
4.0
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
Input capacitance
C
−
−
−
−
−
−
2640
88
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
50
res
nC
ns
Q
109
23
g
Gate to emitter charge
Gate to collector charge
Q
Q
V
CE
= 600 V, I = 15 A, V = 15 V
ge
gc
C
GE
51
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
64
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
104
128
173
1.20
0.37
1.57
62
Turn−off delay time
t
T = 25°C
d(off)
J
V
= 600 V, I = 15 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15 V*
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
GE
on
off
E
ts
t
t
d(on)
t
r
126
134
262
1.45
0.76
2.21
Turn−off delay time
T = 150°C
d(off)
J
V
= 600 V, I = 15 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15 V*
mJ
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
GE
on
off
E
ts
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTB15N120FL2WG.
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2
NGTG15N120FL2WG
TYPICAL CHARACTERISTICS
45
45
T = 150°C
J
T = 25°C
J
V
GE
= 13 V
40
35
30
25
20
15
10
40
35
30
25
20
15
10
to 20 V
V
= 13 V
to 20 V
GE
11 V
11 V
10 V
9 V
10 V
9 V
8 V
7 V
8 V
7 V
5
0
5
0
0
1
2
3
4
5
6
7
8
0
0
0
1
2
, COLLECTOR−EMITTER VOLTAGE (V)
CE
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
Figure 1. Output Characteristics
Figure 2. Output Characteristics
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
T = −55°C
V
= 20 V
J
GE
to 13 V
T = 25°C
J
11 V
10 V
T = 150°C
J
9 V
8 V
5
0
5
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
9
10 11 12 13 14
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
10,000
3.0
2.5
2.0
C
ies
I
C
= 15 A
1000
100
10
1.5
1.0
C
oes
C
res
0.5
0
T = 25°C
J
1
−75 −50 −25
0
25 50 75 100 125 150 175 200
10 20 30
40 50
60 70 80 90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTG15N120FL2WG
TYPICAL CHARACTERISTICS
16
14
12
10
8
6
V
CE
= 600 V
4
V
GE
= 15 V
2
0
I
C
= 15 A
0
20
40
60
80
100
120
Q , GATE CHARGE (nC)
G
Figure 7. Typical Gate Charge
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1000
V
V
= 600 V
= 15 V
= 15 A
CE
E
off
GE
I
C
Rg = 10 W
t
f
V
V
= 600 V
= 15 V
= 15 A
CE
GE
t
d(off)
I
C
0.1
0
Rg = 10 W
120 140
T , JUNCTION TEMPERATURE (°C)
100
0
20
40
60
80
100
160
0
20
40
60
80
100
120
140 160
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 8. Switching Loss vs. Temperature
Figure 9. Switching Time vs. Temperature
2.5
2.0
1.5
1.0
1000
V
= 600 V
= 15 V
V
V
= 600 V
= 15 V
CE
CE
V
GE
GE
T = 150°C
T = 150°C
J
J
E
off
Rg = 10 W
Rg = 10 W
t
f
t
0.5
0
d(off)
100
5
10
15
20
25
30
35
40
45
5
10
15
20
25
30
35
40
45
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 10. Switching Loss vs. IC
Figure 11. Switching Time vs. IC
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4
NGTG15N120FL2WG
TYPICAL CHARACTERISTICS
1000
1.6
1.4
V
V
= 600 V
= 15 V
CE
V
V
= 600 V
= 15 V
CE
GE
GE
t
d(off)
T = 150°C
J
1.2
1.0
0.8
0.6
0.4
T = 150°C
J
I
C
= 15 A
I
C
= 15 A
t
f
0.2
0
100
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 12. Switching Loss vs. Rg
Figure 13. Switching Time vs. Rg
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1000
V
= 15 V
GE
T = 150°C
J
I
C
= 15 A
Rg = 10 W
t
f
V
= 15 V
GE
T = 150°C
J
I
C
= 15 A
Rg = 10 W
t
d(off)
0.1
0
100
350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
350 400 450 500 550 600 650 700 750 800
V , COLLECTOR−EMITTER VOLTAGE (V)
V
CE
CE
Figure 14. Switching Loss vs. VCE
Figure 15. Switching Time vs. VCE
1000
100
10
1000
100
dc operation
50 ms
100 ms
Single Nonrepetitive
10
1
Pulse T = 25°C
C
1
Curves must be derated
linearly with increase
in temperature
1 ms
V
GE
= 15 V, T = 125°C
C
0.1
1
10
100
1000
10k
1
10
100
1000
10k
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
Figure 16. Safe Operating Area
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5
NGTG15N120FL2WG
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
R
= 0.51
q
JC
20%
10%
5%
R
C
R
C
R
C
Junction
Case
1
1
2
2
n
R (°C/W) C (J/°C)
0.091186 0.003468
0.066118 0.015124
0.083897
0.201027
i
i
2%
0.01
0.037692
0.049745
n
0.438100
0.072182
0.001
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 18. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response
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6
NGTG15N120FL2WG
Figure 19. Test Circuit for Switching Characteristics
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7
NGTG15N120FL2WG
Figure 20. Definition of Turn On Waveform
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8
NGTG15N120FL2WG
Figure 21. Definition of Turn Off Waveform
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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