NHPJ15S600G [ONSEMI]
Power Rectifier, Switch-mode, Planar UltraFast, 600 V, 15 A;
| 型号： | NHPJ15S600G |
| 厂家： | 
ONSEMI |
| 描述： | Power Rectifier, Switch-mode, Planar UltraFast, 600 V, 15 A |
| 文件： | 总6页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NHPV15S600G,
NHPJ15S600G
SWITCHMODE
Power Rectifiers
Features
http://onsemi.com
• Ultrafast 30 Nanosecond Recovery Time
• 150°C Operating Junction Temperature
• High Voltage Capability of 600 V
PLANAR ULTRAFAST
RECTIFIERS 15 A, 600 V
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3A
• Low Forward Drop
1
4
3
• Low Leakage Specified @ 125°C Case Temperature
• These Devices are Pb−Free and are RoHS Compliant*
• NHPJ15S600G is Halogen−Free/BFR−Free
3
1
4
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for
10 Seconds
1
1
3
3
TO−220AC
TO−220 FULLPAK
CASE 221B
CASE 221AG
MARKING DIAGRAMS
AY WW
HPV15S600G
KA
AYWW
HPJ15S600G
KA
A
= Assembly Location
Y
= Year
WW
G
KA
= Work Week
= Pb−Free Package
= Diode Polarity
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2013 − Rev. 0
NHPV15S600/D
NHPV15S600G, NHPJ15S600G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
600
V
RRM
RWM
R
V
V
Average Rectified Forward Current (Rated V )
TO−220AC
TO−220FP
I
15 A @ T = 118°C
A
A
R
F(AV)
C
15 A @ T = 60°C
C
Peak Rectified Forward Current (Rated V , Square Wave, 20 kHz)
TO−220AC
TO−220FP
I
15 A @ T = 110°C
C
R
FRM
15 A @ T = 40°C
C
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
I
150
A
FSM
Operating Junction Temperature and Storage Temperature Range
T , T
−55 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
NHPV15S600G: Thermal Resistance
°C/W
Junction−to−Case
R
1.5
73
q
JC
JA
Junction−to−Ambient
R
q
NHPJ15S600G: Thermal Resistance
Junction−to−Case
Junction−to−Ambient
°C/W
R
4.25
75
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 15 A, T = 125°C)
1.5
2.7
1.8
3.2
F
C
(i = 15 A, T = 25°C)
F
C
Maximum Instantaneous Reverse Current (Note 1)
i
R
mA
(Rated DC Voltage, T = 125°C)
46
0.1
800
60
C
(Rated DC Voltage, T = 25°C)
C
Maximum Reverse Recovery
Time
t
rr
−
−
30
50
ns
(I = 0.5 A, I = 0.25 A, I = 1 A)
F
rr
R
(I = 1 A, dI /dt = −50 A/ms, V = 30 V)
F
F
R
Current
Charge
Softness
I
7.7
220
0.15
9.9
−
−
A
nC
−
RM
rr
S
Q
(I = 15 A, dI /dt = −200 A/ms, T = 125°C)
F
F
C
Maximum Forward Recovery
Time
t
FP
200
6
ns
V
fr
Voltage
V
(I = 15 A, dI /dt = 120 A/ms, T = 25°C)
F
F
C
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device
†
Package
Shipping
NHPV15S600G
TO−220AC
(Pb−Free)
50 Units / Rail
NHPJ15S600G
TO−220FP
(Pb−Free / Halide−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
NHPV15S600G, NHPJ15S600G
TYPICAL CHARACTERISTICS
100
10
1000
100
T = 150°C
A
T = 150°C
A
T = 25°C
A
T = 125°C
A
10
1
T = 125°C
A
1
0.1
T = 25°C
A
0.1
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
100
200
300
400
500
600
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Typical Reverse Characteristics
1000
30
25
20
T = 25°C
J
R
= 1.5°C/W
dc
q
JC
Square Wave
100
10
15
10
5
0
0.1
1
10
100
1000
60
80
100
120
140
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating TO−220AC
30
25
20
15
10
30
25
20
15
10
I
/I
= 20
I
/I = 5
PK AV
PK AV
R
= 4.25°C/W
q
JC
I /I = 10
PK AV
dc
dc
Square Wave
Square Wave
5
0
5
0
T = 150°C
J
0 10
30
50
70
90
110
130
150
0
2
4
6
8
10
12
14
16 18
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 5. Current Derating TO−220 FULLPAK
Figure 6. Forward Power Dissipation
http://onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPACK, 2−LEAD
CASE 221AG
ISSUE B
DATE 27 AUG 2015
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
SEATING
PLANE
A
B
E
A
P
E/2
H1
A1
M
M
B
A
0.14
SCALE 1:1
4
Q
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
D
C
NOTE 3
1
2
3
MILLIMETERS
DIM MIN
MAX
4.70
2.90
2.90
0.84
1.40
0.79
15.88
10.67
A
A1
A2
b
4.30
2.50
2.50
0.54
1.10
0.49
14.22
9.65
L
L1
b2
c
3X
c
b
3X
b2
e
D
M
M
0.25
B
A
C
A2
E
e
2.54 BSC
5.08 BSC
SIDE VIEW
e1
H1
L
e1
6.40
6.90
14.73
2.80
12.70
---
TOP VIEW
A
L1
P
3.00
2.80
3.40
Q
3.20
NOTE 6
GENERIC
MARKING DIAGRAM*
NOTE 6
H1
D
D
XX
XXXXXXXXX
AWLYWWG
SECTION A−A
A
ALTERNATE
CONSTRUCTION
SECTION D−D
1
A
= Assembly Location
WL = Wafer Lot
= Year
WW = Work Week
= Pb−Free Package
Y
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON52563E
TO−220 FULLPACK, 2−LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220, 2−LEAD
CASE 221B−04
ISSUE F
DATE 12 APR 2013
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
F
T
S
Q
INCHES
DIM MIN MAX
MILLIMETERS
MIN
15.11
9.65
4.06
0.64
3.61
4.83
2.79
0.36
12.70
1.14
2.54
2.04
1.14
5.97
0.000
MAX
15.75
10.29
4.82
1.00
4.09
5.33
3.30
0.64
14.27
1.52
3.04
2.79
1.39
6.48
1.27
A
B
C
D
F
0.595
0.380
0.160
0.025
0.142
0.190
0.110
0.014
0.500
0.045
0.100
0.080
0.045
0.235
0.000
0.620
0.405
0.190
0.039
0.161
0.210
0.130
0.025
0.562
0.060
0.120
0.110
0.055
0.255
0.050
SCALE 1:1
4
A
U
1
3
G
H
J
H
K
K
L
Q
R
S
T
L
R
J
D
U
G
STYLE 1:
STYLE 2:
PIN 1. CATHODE
2. N/A
3. ANODE
PIN 1. ANODE
2. N/A
3. CATHODE
4. ANODE
4. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42149B
TO−220, 2−LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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