NJV4030PT1G [ONSEMI]
Bipolar Power Transistors;型号: | NJV4030PT1G |
厂家: | ONSEMI |
描述: | Bipolar Power Transistors |
文件: | 总5页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NJT4030P, NJV4030P
Bipolar Power Transistors
PNP Silicon
Features
• Epoxy Meets UL 94, V−0 @ 0.125 in
http://onsemi.com
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
COLLECTOR 2,4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
40
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
V
BASE
1
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
40
CB
EB
EMITTER 3
V
6.0
1.0
3.0
5.0
3B
MARKING
DIAGRAM
Base Current − Continuous
Collector Current − Continuous
Collector Current − Peak
ESD − Human Body Model
ESD − Machine Model
I
B
C
4
I
1
2
I
3
CM
AYW
SOT−223
CASE 318E
STYLE 1
4030PG
HBM
MM
1
C
V
A
Y
W
= Assembly Location
Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
4030P = Specific Device Code
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
ORDERING INFORMATION
Total Power Dissipation
P
W
D
†
Device
Package
Shipping
Total P @ T = 25°C (Note 1)
2.0
D
A
Total P @ T = 25°C (Note 2)
0.80
D
A
NJT4030PT1G
NJV4030PT1G
SOT−223
(Pb−Free)
1000 / Tape &
Reel
Thermal Resistance, Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
°C/W
R
R
64
155
q
q
JA
JA
NJT4030PT3G
NJV4030PT3G
SOT−223
(Pb−Free)
4000 / Tape &
Reel
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
T
260
°C
°C
L
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Operating and Storage Junction
Temperature Range
T , T
J
−55 to
+150
stg
1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.
2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
November, 2013 − Rev. 5
NJT4030P/D
NJT4030P, NJV4030P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
V
Vdc
Vdc
CEO(sus)
(I = 10 mAdc, I = 0 Adc)
40
6.0
−
−
−
−
−
−
C
B
Emitter−Base Voltage
(I = 50 mAdc, I = 0 Adc)
V
EBO
−
E
C
Collector Cutoff Current
I
nAdc
nAdc
CBO
(V = 40 Vdc)
100
100
CB
Emitter Cutoff Current
I
EBO
(V = 6.0 Vdc)
−
BE
ON CHARACTERISTICS (Note 3)
Collector−Emitter Saturation Voltage
V
V
Vdc
CE(sat)
(I = 0.5 Adc, I = 5.0 mAdc)
−
−
−
−
−
−
0.150
0.200
0.500
C
B
(I = 1.0 Adc, I = 10 mAdc)
C
B
(I = 3.0 Adc, I = 0.3 Adc)
C
B
Base−Emitter Saturation Voltage
(I = 1.0 Adc, I = 0.1 Adc)
Vdc
Vdc
−
BE(sat)
−
−
−
−
1.0
1.0
C
B
Base−Emitter On Voltage
V
BE(on)
(I = 1.0 Adc, V = 2.0 Vdc)
C
CE
DC Current Gain
h
FE
(I = 0.5 Adc, V = 1.0 Vdc)
220
200
100
−
−
−
−
400
−
C
CE
(I = 1.0 Adc, V = 1.0 Vdc)
C
CE
(I = 3.0 Adc, V = 1.0 Vdc)
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
pF
pF
ob
(V = 10 Vdc, f = 1.0 MHz)
−
−
−
40
−
−
−
CB
Input Capacitance
C
ib
(V = 5.0 Vdc, f = 1.0 MHz)
130
160
EB
Current−Gain − Bandwidth Product (Note 4)
f
T
MHz
(I = 500 mA, V = 10 V, F = 1.0 MHz)
C
CE
test
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. f = |h | • f
T
FE
test
2.5
2.0
1.5
1.0
T
C
T
A
0.5
0
25
50
75
100
125
150
T , TEMPERATURE (°C)
J
Figure 1. Power Derating
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2
NJT4030P, NJV4030P
TYPICAL CHARACTERISTICS
600
500
400
300
200
700
V
CE
= 4 V
V
CE
= 1 V
150°C
600
500
400
300
200
150°C
25°C
25°C
−40°C
−40°C
100
0
100
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
10
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 2. DC Current Gain
Figure 3. DC Current Gain
1
1
I /I = 10
C
B
I /I = 50
150°C
C
B
150°C
25°C
−40°C
0.1
25°C
−40°C
0.1
0.01
0.001
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 4. Collector−Emitter Saturation Voltage
Figure 5. Collector−Emitter Saturation Voltage
1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
CE
= 2 V
I
C
= 2 A
−40°C
25°C
1 A
0.1
0.5 A
0.1 A
150°C
0.1
0
0.01
1.0E−04 1.0E−03
1.0E−02
1.0E−01
1.0E+00
0.001
0.01
0.1
1
I , BASE CURRENT (A)
B
I , COLLECTOR CURRENT (A)
C
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
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3
NJT4030P, NJV4030P
TYPICAL CHARACTERISTICS
1.2
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I /I = 10
I /I = 50
C B
C
B
−40°C
25°C
−40°C
25°C
150°C
150°C
0.1
0
0.1
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 8. Base−Emitter Saturation Voltage
Figure 9. Base−Emitter Saturation Voltage
350
100
80
T = 25°C
test
J
T = 25°C
test
J
f
= 1 MHz
300
250
200
150
100
f
= 1 MHz
60
40
20
0
50
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
35
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
200
10
1
T = 25°C
test
J
180
160
140
120
100
80
0.5 ms
f
= 1 MHz
V
CE
= 10 V
1 ms
10 ms
100 ms
0.1
60
40
20
0
0.01
0.001
0.01
0.1
1
1
10
, COLLECTOR−EMITTER VOLTAGE (V)
CE
100
I , COLLECTOR CURRENT (A)
V
C
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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4
NJT4030P, NJV4030P
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
H
E
E
1
3
b
e1
e
2.00
7.30
10°
0.069
0.276
−
0.078
0.287
10°
C
q
H
E
A
q
0.08 (0003)
STYLE 1:
A1
PIN 1. BASE
2. COLLECTOR
3. EMITTER
L
L1
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NJT4030P/D
相关型号:
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