NJV4031NT1G [ONSEMI]

Bipolar Power Transistors;


型号：	NJV4031NT1G
厂家：	ONSEMI
描述：	Bipolar Power Transistors 光电二极管晶体管
文件：	总5页 (文件大小：112K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NJT4031N,

NJV4031NT1G,

NJV4031NT3G

Bipolar Power Transistors

NPN Silicon

http://onsemi.com

Features

• Epoxy Meets UL 94, V−0 @ 0.125 in

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

NPN TRANSISTOR

3.0 AMPERES

40 VOLTS, 2.0 WATTS

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

COLLECTOR 2,4

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

BASE

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

Unit

Vdc

EMITTER 3

CEO

MARKING

DIAGRAM

6.0

Base Current − Continuous

Collector Current − Continuous

Collector Current − Peak

ESD − Human Body Model

ESD − Machine Model

1.0

3.0

5.0

Adc

AYW

SOT−223

CASE 318E

STYLE 1

4031NG

HBM

= Assembly Location

Year

= Work Week

4031N = Specific Device Code

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Pb−Free Package

ORDERING INFORMATION

THERMAL CHARACTERISTICS

†

Device

Package

Shipping

Characteristic

Symbol

Max

Unit

NJT4031NT1G

NJV4031NT1G

SOT−223

(Pb−Free)

1000 / Tape &

Reel

Total Power Dissipation

Total P @ T = 25°C (Note 1)

2.0

0.80

Total P @ T = 25°C (Note 2)

NJT4031NT3G

NJV4031NT3G

SOT−223

(Pb−Free)

4000 / Tape &

Reel

Thermal Resistance, Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

°C/W

155

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Maximum Lead Temperature for Soldering

Purposes, 1/8” from case for 5 seconds

260

°C

Operating and Storage Junction

Temperature Range

T , T

−55 to

+150

stg

1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.

2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.

Publication Order Number:

August, 2013 − Rev. 4

NJT4031N/D

NJT4031N, NJV4031NT1G, NJV4031NT3G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(I = 10 mAdc, I = 0 Adc)

Vdc

CEO(sus)

6.0

−

Emitter−Base Voltage

(I = 50 mAdc, I = 0 Adc)

EBO

−

Collector Cutoff Current

nAdc

CBO

(V = 40 Vdc)

100

Emitter Cutoff Current

EBO

(V = 6.0 Vdc)

−

ON CHARACTERISTICS (Note 3)

Collector−Emitter Saturation Voltage

Vdc

CE(sat)

(I = 0.5 Adc, I = 5.0 mAdc)

−

0.100

0.150

0.300

(I = 1.0 Adc, I = 10 mAdc)

(I = 3.0 Adc, I = 0.3 Adc)

Base−Emitter Saturation Voltage

(I = 1.0 Adc, I = 0.1 Adc)

Vdc

BE(sat)

−

1.0

Base−Emitter On Voltage

BE(on)

(I = 1.0 Adc, V = 2.0 Vdc)

DC Current Gain

(I = 0.5 Adc, V = 1.0 Vdc)

220

200

100

−

(I = 1.0 Adc, V = 1.0 Vdc)

500

(I = 3.0 Adc, V = 1.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

(V = 10 Vdc, f = 1.0 MHz)

−

Input Capacitance

(V = 5.0 Vdc, f = 1.0 MHz)

170

215

Current−Gain − Bandwidth Product (Note 4)

MHz

(I = 500 mA, V = 10 V, F = 1.0 MHz)

test

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. f = |h | • f

test

2.5

2.0

1.5

1.0

0.5

100

125

150

T , TEMPERATURE (°C)

Figure 1. Power Derating

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NJT4031N, NJV4031NT1G, NJV4031NT3G

TYPICAL CHARACTERISTICS

600

500

400

300

200

700

= 4 V

= 1 V

150°C

600

500

400

300

200

150°C

25°C

−55°C

100

0.001

0.01

0.1

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 2. DC Current Gain

Figure 3. DC Current Gain

I /I = 10

I /I = 50

150°C

25°C

0.1

−55°C

25°C

0.1

−55°C

0.01

0.001

0.01

0.001

0.01

0.1

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 4. Collector−Emitter Saturation Voltage

Figure 5. Collector−Emitter Saturation Voltage

1.2

1.0

0.8

0.6

0.4

= 2 V

−55°C

= 3 A

2 A

0.1

25°C

1 A

0.5 A

150°C

0.2

0.1 A

0.01

0.0001

0.001

0.01

0.1

1.0

0.001

0.01

0.1

I , BASE CURRENT (A)

I , COLLECTOR CURRENT (A)

Figure 6. Collector Saturation Region

Figure 7. V_BE(on)Voltage

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NJT4031N, NJV4031NT1G, NJV4031NT3G

TYPICAL CHARACTERISTICS

1.4

1.2

I /I = 10

I /I = 50

C B

1.2

1.0

0.8

0.6

0.4

1.0

0.8

0.6

0.4

−55°C

25°C

150°C

0.2

0.001

0.01

0.1

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 8. Base−Emitter Saturation Voltage

Figure 9. Base−Emitter Saturation Voltage

450

100

T = 25°C

400

350

300

250

200

150

100

= 1 MHz

test

, EMITTER BASE VOLTAGE (V)

, COLLECTOR BASE VOLTAGE (V)

Figure 10. Input Capacitance

Figure 11. Output Capacitance

240

200

160

120

T = 25°C

= 1 MHz

0.5 ms

test

= 10 V

1 ms

10 ms

100 ms

0.1

0.01

0.001

0.01

0.1

, COLLECTOR−EMITTER VOLTAGE (V)

100

I , COLLECTOR CURRENT (A)

Figure 12. Current−Gain Bandwidth Product

Figure 13. Safe Operating Area

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NJT4031N, NJV4031NT1G, NJV4031NT3G

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCH.

MILLIMETERS

INCHES

NOM

0.064

0.002

0.030

0.121

0.012

0.256

0.138

0.091

0.037

−−−

DIM

MIN

1.50

0.02

0.60

2.90

0.24

6.30

3.30

2.20

0.85

0.20

1.50

6.70

0°

NOM

1.63

0.06

0.75

3.06

0.29

6.50

3.50

2.30

0.94

−−−

1.75

7.00

−

MAX

1.75

0.10

0.89

3.20

0.35

6.70

3.70

2.40

1.05

−−−

2.00

7.30

10°

MIN

0.060

0.001

0.024

0.115

0.009

0.249

0.130

0.087

0.033

0.008

0.060

0.264

0°

MAX

0.068

0.004

0.035

0.126

0.014

0.263

0.145

0.094

0.041

−−−

0.069

0.276

−

0.078

0.287

10°

0.08 (0003)

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

SOLDERING FOOTPRINT*

3.8

0.15

2.0

0.079

6.3

0.248

2.3

0.091

2.3

0.091

2.0

0.079

inches

1.5

0.059

SCALE 6:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,

copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC

reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without

limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC

does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for

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PUBLICATION ORDERING INFORMATION

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USA/Canada

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Phone: 421 33 790 2910

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For additional information, please contact your local

Sales Representative

NJT4031N/D

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