NJVMJK32CTWG [ONSEMI]
Power Transistor 100 V, 3 A Dual General Purpose PNP;型号: | NJVMJK32CTWG |
厂家: | ONSEMI |
描述: | Power Transistor 100 V, 3 A Dual General Purpose PNP |
文件: | 总6页 (文件大小:1680K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Power Transistor, PNP, Dual
General Purpose
100 V, 3 A
PNP TRANSISTOR
100 V, 3 A
C5
MJK32C
These Bipolar Junction Transistors are designed for general purpose
power and switching applications such as regulators, converters
and power amplifiers. Housed in advanced LFPAK package
(5 x 6 mm) with excellent thermal conduction. Automotive
end applications include air bag deployment, power train control
units, and instrument clusters.
B 4
E 123
Features
• Complementary NPN: MJK31C
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
LFPAK4 5x6
CASE 760AB
MARKING DIAGRAM
XXXXX
XX
MAXIMUM RATINGS (T = 25°C)
A
Rating
Symbol
Max
Unit
ALLYW
Collector−Emitter Voltage
V
−100
Vdc
CEO
EBO
Emitter−Base Voltage
V
−5
−3
Vdc
A
1
2
3
4
(Top View)
Collector Current − Continuous
Collector Current − Peak
I
C
XXXXXX
A
LL
Y
= Specific Device Code
= Assembly Location
= Wafer Lot
I
−5
A
CM
Junction and Storage Temperature Range
T , T
−65 to +150
_C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Year
W
= Work Week
ORDERING INFORMATION
THERMAL CHARACTERISTICS
†
Device
Package
Shipping
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
per Device (Note 1)
R
2.4
_C/W
MJK32CTWG
LFPAK4 5x6 3000 / Tape &
q
JC
(Pb−Free)
Reel
Thermal Resistance, Junction−to−Ambient
per Device (Note 1)
R
45
_C/W
LFPAK4 5x6 3000 / Tape &
NJVMJK32CTWG
q
JA
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Total Power Dissipation
P
2.7
W
D
@ T = 25_C (Note 1)
A
2
1. Surface−mounted on FR4 board using a 6 cm , 2 oz. Cu collector pad.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2022 − Rev. 0
MJK32C/D
MJK32C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
V
Vdc
mA
CEO(sus)
(I = −30 mA, I = 0)
−100
−
−
−
−
−
C
B
Collector Cutoff Current
(V = Rated V , V = 0)
I
CES
CEO
−
−
−
−20
−50
−1.0
CE
CEO BE
Collector Cutoff Current
(V = Rated V , I = 0)
I
mA
CE
CEO
B
Emitter Cutoff Current
(V = −5 Vdc)
I
mA
EBO
EB
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
V
Vdc
Vdc
−
CE(sat)
(I = −3 Adc, I = −0.375 Adc)
−
−
−
−
−1.2
−1.8
C
B
Base−Emitter Saturation Voltage
V
BE(on)
(I = −3 Adc, V = −4 Vdc)
C
CE
DC Current Gain
h
FE
(V = −4 Vdc, I = −1 Adc)
25
10
−
−
−
60
CE
C
(V = −4 Vdc, I = −3 Adc)
CE
C
DYNAMIC CHARACTERISTICS
Gain Bandwidth Product
f
T
−
3
−
MHz
(I = 0.5 Adc, V = 10 Vdc, f = 1 MHz)
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MJK32C
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
Figure 2. DC Current Gain
Figure 4. Saturation Voltage VBE(sat)
Figure 3. Saturation Voltage VCE(sat)
Figure 6. Capacitance
Figure 5. Collector Saturation Region
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3
MJK32C
TYPICAL CHARACTERISTICS (continued)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 8. Power Derating
Figure 7. Current−Gain−Bandwidth Product
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response, Junction−to−Case
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4
MJK32C
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE C
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5
MJK32C
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