NJW3281G [ONSEMI]
Complementary NPN-PNP Silicon Power Bipolar Transistors; 互补NPN -PNP硅功率双极晶体管
| 型号： | NJW3281G |
| 厂家： | 
ONSEMI |
| 描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 文件： | 总7页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NJW3281G (NPN)
NJW1302G (PNP)
Preferred Devices
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The NJW3281G and NJW1302G are power transistors for high
power audio, disk head positioners and other linear applications.
Features
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15 AMPERES
COMPLEMENTARY
•ꢀExceptional Safe Operating Area
•ꢀNPN/PNP Gain Matching within 10% from 50 mA to 5 A
•ꢀExcellent Gain Linearity
SILICON POWER TRANSISTORS
250 VOLTS 200 WATTS
•ꢀHigh BVCEO
•ꢀHigh Frequency
•ꢀThese are Pb-Free Devices
MARKING
DIAGRAM
Benefits
•ꢀReliable Performance at Higher Powers
•ꢀSymmetrical Characteristics in Complementary Configurations
•ꢀAccurate Reproduction of Input Signal
•ꢀGreater Dynamic Range
NJWxxxG
AYWW
•ꢀHigh Amplifier Bandwith
Applications
•ꢀHigh-End Consumer Audio Products
♦ꢀHome Amplifiers
TO-3P
CASE 340AB
STYLES 1,2,3
♦ꢀHome Receivers
•ꢀProfessional Audio Amplifiers
♦ꢀTheater and Stadium Sound Systems
♦ꢀPublic Address Systems (PAs)
xxxx
G
= 0281 or 0302
= Pb-Free Package
= Assembly Location
= Year
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Value
250
250
5.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
A
Y
WW
V
CEO
V
CBO
= Work Week
V
EBO
CEX
Collector-Emitter Voltage - 1.5 V
V
250
ORDERING INFORMATION
Collector Current - Continuous
Collector Current - Peak (Note 1)
I
C
15
30
Device
Package
Shipping
Base Current - Continuous
I
1.6
Adc
B
NJW3281G
TO-3P
(Pb-Free)
30 Units/Rail
Total Power Dissipation @ T = 25°C
Derate Above 25°C
P
200
1.43
W
W/°C
C
D
NJW1302G
TO-3P
(Pb-Free)
30 Units/Rail
Operating and Storage Junction
Temperature Range
T , T
J
-āā65 to +150
°C
stg
THERMAL CHARACTERISTICS
Preferred devices are recommended choices for future use
and best overall value.
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
R
0.625
°C/W
q
JC
JA
Thermal Resistance, Junction-to-Ambient
R
40
°C/W
q
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
©ꢀ Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 0
1
Publication Order Number:
NJW3281/D
NJW3281G (NPN) NJW1302G (PNP)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(I = 100 mAdc, I = 0)
V
Vdc
mAdc
mAdc
CEO(sus)
250
-
-
-
-
-
50
5
C
B
Collector Cutoff Current
I
CBO
(V = 250 Vdc, I = 0)
CB E
Emitter Cutoff Current
I
EBO
(V = 5 Vdc, I = 0)
EB C
-
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V = 50 Vdc, t = 1 s (non-repetitive)
I
Adc
-
S/b
4
-
-
CE
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = 100 mAdc, V = 5 Vdc)
75
75
75
60
45
-
-
-
-
-
150
150
150
-
C
CE
(I = 1 Adc, V = 5 Vdc)
C
CE
(I = 3 Adc, V = 5 Vdc)
C
CE
(I = 5 Adc, V = 5 Vdc)
C
CE
(I = 8 Adc, V = 5 Vdc)
-
C
CE
Collector-Emitter Saturation Voltage
(I = 8 Adc, I = 0.8 Adc)
V
Vdc
Vdc
CE(sat)
-
-
0.4
-
0.6
1.5
C
B
Base-Emitter On Voltage
(I = 8 Adc, V = 5 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(I = 1 Adc, V = 5 Vdc, f
f
MHz
pF
T
= 1 MHz)
-
-
30
-
-
C
CE
test
Output Capacitance
C
ob
(V = 10 Vdc, I = 0, f = 1 MHz)
test
600
CB
E
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2
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
PNP NJW1302G
NPN NJW3281G
60
50
40
30
20
10
0
80
60
40
20
0
T = 25°C
test
V
= 10 V
T = 25°C
test
J
CE
V
= 10 V
J
CE
f
= 1 MHz
f
= 1 MHz
5 V
5 V
0.1
1
10
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 2. Typical Current Gain
Bandwidth Product
Figure 1. Typical Current Gain
Bandwidth Product
1000
100
10
1000
100
10
V
= 5 V
V
CE
= 5 V
CE
125°C
125°C
25°C
25°C
-30°C
-30°C
0.01
0.1
1
10
100
0.1
1
10
100
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain
Figure 4. DC Current Gain
1000
100
10
1000
100
10
V
CE
= 20 V
V
= 20 V
CE
125°C
25°C
125°C
25°C
-30°C
-30°C
0.1
1
10
10
0.01
0.1
1
10
100
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. DC Current Gain
Figure 6. DC Current Gain
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3
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
PNP NJW1302G
NPN NJW3281G
1
1
5 A
5 A
3 A
1 A
1 A
0.1
3 A
0.1
0.5 A
0.5 A
I
C
= 0.1 A
I
C
= 0.1 A
T = 25°C
J
T = 25°C
J
0.01
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , BASE CURRENT (A)
B
I , BASE CURRENT (A)
B
Figure 7. Saturation Region
Figure 8. Saturation Region
1
1
I /I = 10
C B
I /I = 10
C B
25°C
0.1
0.1
25°C
-30°C
-30°C
125°C
125°C
0.01
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
I , COLLECTER CURRENT (A)
C
I , COLLECTER CURRENT (A)
C
Figure 9. VCE(sat), Collector-Emitter Saturation
Voltage
Figure 10. VCE(sat), Collector-Emitter
Saturation Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
CE
= 5 V
V
CE
= 5 V
-30°C
-30°C
25°C
125°C
25°C
125°C
0.01
0.1
1
10
100
0.01
0.1
1
10
100
I , COLLECTER CURRENT (A)
C
I , COLLECTER CURRENT (A)
C
Figure 11. VBE(on), Base-Emitter Voltage
Figure 12. VBE(on), Base-Emitter Voltage
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4
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
PNP NJW1302G
NPN NJW3281G
1200
1000
800
600
400
200
0
1200
1000
800
600
400
200
0
T = 25°C
Test
T = 25°C
J
Test
J
f
= 1 MHz
f
= 1 MHz
0
10 20 30 40 50 60 70 80 90 100
, COLLECTER-BASE VOLTAGE (V)
0
20
V , COLLECTER-BASE VOLTAGE (V)
CB
40
60
80
100
V
CB
Figure 13. Output Capacitance
Figure 14. Output Capacitance
12000
10000
8000
6000
4000
2000
10000
8000
6000
4000
2000
T = 25°C
Test
T = 25°C
Test
J
J
f
= 1 MHz
f
= 1 MHz
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
V , EMITTER-BASE VOLTAGE (V)
EB
V , EMITTER-BASE VOLTAGE (V)
EB
Figure 15. Input Capacitance
Figure 16. Input Capacitance
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5
NJW3281G (NPN) NJW1302G (PNP)
PNP NJW1302G
NPN NJW3281G
100
10
100
10
10 mSec
10 mSec
100 mSec
100 mSec
1 Sec
1 Sec
1.0
0.1
1.0
0.1
1.0
10
100
1000
1.0
10
V , COLLECTOR EMITTER (VOLTS)
CE
100
1000
V
CE
, COLLECTOR EMITTER (VOLTS)
Figure 17. Active Region Safe Operating Area
Figure 18. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I - V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 17 and 18 is based on T = 150°C;
is variable depending on conditions. At high case
J(pk)
T
C
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
C
CE
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6
NJW3281G (NPN) NJW1302G (PNP)
PACKAGE DIMENSIONS
TO-3P-3LD
CASE 340AB-01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
SEATING
PLANE
A
B
B
C
U
Q
E
4
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
A
K
L
MILLIMETERS
DIM MIN
NOM
MAX
A
B
C
D
E
F
19.70
15.40
4.60
0.80
1.45
1.80
19.90 20.10
15.60 15.80
4.80
1.00
5.00
1.20
1.65
2.20
1.50
2.00
(3°)
P
G
H
J
5.45 BSC
1.40
0.60
1.20
0.55
1.60
0.75
K
L
19.80
18.50
3.30
20.00 20.20
18.70 18.90
1
2
3
F
H
J
P
Q
U
W
3.50
3.20
3.70
3.50
3X D
3.10
W
M
S
A B
0.25
5.00 REF
3.00
2.80
3.20
G
G
STYLE 1:
PIN 1. BASE
2. COLLECTOR
STYLE 2:
PIN 1. ANODE
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
4. CATHODE
3. EMITTER
4. COLLECTOR
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NJW3281/D
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