NL17SV125MU1TCG [ONSEMI]
Non-Inverting 3-State Buffer;
| 型号： | NL17SV125MU1TCG |
| 厂家： | 
ONSEMI |
| 描述： | Non-Inverting 3-State Buffer 光电二极管 逻辑集成电路 触发器 |
| 文件： | 总14页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
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Non-Inverting 3-State
Buffer
NL17SV125
The NL17SV125 is a single non−inverting 3−State buffer in tiny
=
footprint packages. The device is designed to operate for V
to 3.6 V.
0.9 V
CC
www.onsemi.com
Features
MARKING
DIAGRAMS
• Designed for 0.9 V to 3.6 V V Operation
CC
• 1.6 ns t at 3.3 V (Typ)
PD
• Inputs/Outputs Over−Voltage Tolerant up to 3.6 V
SC−74A
CASE 318BQ
XXX MG
• I
Supports Partial Power Down Protection
• Source/Sink 24 mA at 3.3 V
OFF
G
• Available in SOT−353, SOT−553, SOT−953, SC−74A and UDFN
Packages
SC−88A
(SC−70−5/SOT−353)
CASE 419A−02
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
XXXMG
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
XXMG
SOT−553, 5 LEAD
CASE 463B
G
OE
A
EN
Y
SOT−953
CASE 527AE
Figure 1. Logic Symbol
XM
XM
X M
UDFN6, 1.45x1.0, 0.5P
CASE 517AQ
OE
A
1
2
3
6
5
V
CC
OE
A
1
2
3
5
4
V
Y
CC
NC
Y
GND
UDFN6, 1x1, 0.35P
CASE 517BX
GND
4
(SC−88A / SOT−553 /
SC−74A)
UDFN6
X, XX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
A
GND
OE
1
2
3
5
4
V
Y
CC
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G”
or microdot “G”, may or may not be present.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 7 of this data sheet.
SOT−953
Figure 2. Pinout (Top View)
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2021 − Rev. 1
NL17SV125/D
NL17SV125
PIN ASSIGNMENT
FUNCTION TABLE
SC88A / SOT553
Input
Output
/ SC−74A
Pin
1
SOT−953
UDFN6
OE
OE
L
A
L
Y
L
A
GND
OE
Y
OE
A
2
A
L
H
X
H
Z
3
GND
Y
GND
Y
H
4
X = Don’t Care
Z = High Impedance State
5
V
CC
V
CC
NC
6
−
−
V
CC
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
V
DC Supply Voltage
−0.5 to +4.3
−0.5 to +4.3
V
V
V
CC
V
DC Input Voltage
IN
V
OUT
DC Output Voltage
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
−0.5 to V + 0.5
CC
−0.5 to +4.3
−0.5 to +4.3
Power−Down Mode (V = 0 V)
CC
I
DC Input Diode Current
V
< GND
< GND
−50
−50
mA
mA
mA
mA
°C
IK
IN
I
DC Output Diode Current
V
OUT
OK
I
DC Output Source/Sink Current
DC Supply Current per Supply Pin or Ground Pin
Storage Temperature Range
50
OUT
I
or I
50
CC
GND
T
−65 to +150
260
STG
T
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance (Note 2)
°C
L
T
+150
°C
J
q
SC−88A
SOT−553
SOT−953
SC−74A
UDFN6
377
324
254
320
154
°C/W
JA
P
D
Power Dissipation in Still Air
SC−88A
SOT−553
SOT−953
SC−74A
UDFN6
332
386
491
390
812
mW
MSL
Moisture Sensitivity
Level 1
−
−
V
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage (Note 3)
Human Body Model
Charged Device Model
2000
1000
I
Latchup Performance (Note 4)
100
mA
Latchup
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Applicable to devices with outputs that may be tri−stated.
2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow per JESD51−7.
3. HBM tested to EIA / JESD22−A114−A. CDM tested to JESD22−C101−A. JEDEC recommends that ESD qualification to EIA/JESD22−A115A
(Machine Model) be discontinued.
4. Tested to EIA/JESD78 Class II.
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2
NL17SV125
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
0.9
0
Max
3.6
Unit
V
V
CC
Positive DC Supply Voltage
DC Input Voltage
V
IN
3.6
V
V
OUT
DC Output Voltage
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
0
0
0
V
CC
3.6
3.6
Power−Down Mode (V = 0 V)
CC
T
Operating Temperature Range
−55
+125
20
°C
A
t , t
r
Input Transition Rise and Fall Time
0
ns/V
f
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
T
A
= 255C
Typ
T
A
= −555C to +1255C
Min
Max
Min
Max
Symbol
Parameter
Condition
V
CC
(V)
Unit
0.9
−
0.5
−
−
−
−
V
High−Level Input
V
IH
Voltage
1.1 to 1.3
1.4 to 1.6
0.65 x V
−
0.65 x V
−
CC
CC
CC
CC
0.65 x V
−
−
0.65 x V
−
CC
CC
1.65 to 1.95 0.65 x V
−
−
−
0.65 x V
−
−
2.3 to < 2.7
2.7 to 3.6
0.9
1.6
2.0
−
−
1.6
2.0
−
−
−
−
0.5
−
−
−
V
Low−Level Input
Voltage
V
V
IL
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to < 2.7
2.7 to 3.6
−
0.35 x V
0.35 x V
0.35 x V
0.7
−
0.35 x V
0.35 x V
0.35 x V
0.7
CC
CC
CC
CC
CC
CC
−
−
−
−
−
−
−
−
−
−
−
0.8
−
0.8
High−Level Output
Voltage
V
I
= V or V
IL
V
OH
IN
IH
0.9
−
V
CC
0.1
–
−
−
−
= −100 mA
OH
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to <2.7
2.7 to 3.6
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
2.3 to 2.7
2.7 to 3.6
2.3 to 2.7
2.7 to 3.6
2.7 to 3.6
V
V
V
V
V
– 0.1
– 0.1
– 0.2
– 0.2
– 0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
– 0.1
– 0.1
– 0.2
– 0.2
– 0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
I
I
I
= −2 mA
= −4 mA
= −6 mA
0.75 x V
0.75 x V
1.25
2.0
0.75 x V
0.75 x V
1.25
2.0
OH
OH
OH
CC
CC
CC
CC
1.8
1.8
I
I
I
= −12 mA
= −18 mA
= −24 mA
OH
OH
OH
2.2
2.2
1.7
1.7
2.4
2.4
2.2
2.2
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3
NL17SV125
DC ELECTRICAL CHARACTERISTICS (continued)
T
A
= 255C
Typ
T
A
= −555C to +1255C
Min
Max
Min
Max
Symbol
Parameter
Condition
V
CC
(V)
Unit
Low−Level Output
Voltage
V
IN
= V or V
V
OL
V
IH
IL
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
I
= 100 mA
OL
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to < 2.7
2.7 to 3.6
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
2.3 to 2.7
2.7 to 3.6
2.3 to 2.7
2.7 to 3.6
2.7 to 3.6
0.9 to 3.6
0.1
0.1
0.2
0.2
0.2
0.2
0.2
0.2
I
OL
I
OL
I
OL
= 2 mA
= 4 mA
= 6 mA
0.25 x V
0.25 x V
0.3
0.25 x V
0.25 x V
0.3
CC
CC
CC
CC
0.3
0.3
0.4
0.4
I
OL
I
OL
I
OL
= 12 mA
= 18 mA
= 24 mA
0.4
0.4
0.6
0.6
0.4
0.4
0.55
0.1
0.55
0.9
I
Input Leakage
Current
V
= 3.6 V or GND
mA
mA
mA
mA
IN
IN
I
3−State Output
Leakage Current
V
= 0 V to 3.6 V
0.9 to 3.6
0
−
−
−
−
−
−
0.5
1.0
0.9
−
−
−
5.0
5.0
5.0
OZ
OUT
I
Power Off Leakage
Current
V
V
= 3.6 V or
= 3.6 V
OFF
IN
OUT
I
Quiescent Supply
Current
V
IN
= V or GND
0.9 to 3.6
CC
CC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NL17SV125
AC ELECTRICAL CHARACTERISTICS
T
A
= 25°C
Typ
16.6
7.3
3.9
2.7
1.9
1.6
14
T
A
= −555C to +1255C
Min
−
Max
−
Min
Max
Symbol
Parameter
Condition
V
(V)
Unit
CC
t
, t
Propagation Delay,
A to Y (Figures 3 and 4)
0.9
−
−
ns
R = 1 MW, C = 15 pF
PLH PHL
L
L
R = 2 kW, C = 15 pF
1.10 to 1.30
1.40 to 1.60
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
0.9
−
11.5
5.3
4.3
2.8
2.6
−
−
14.9
5.7
4.6
3.0
2.8
−
L
L
−
−
R = 500 W, C = 30 pF
−
−
L
L
−
−
−
−
t
t
, t
Output Enable Time,
OE to Y
(Figures 3 and 4)
C = 30 pF
−
−
ns
ns
PZH PZL
L
1
R = R = 1 kW
L
1.10 to 1.30
1.40 to 1.60
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
0.9
−
6.0
4.0
3.0
2.0
1.2
14
9.7
6.0
4.5
3.0
2.6
−
−
16.4
7.5
5.0
3.4
2.9
−
−
−
−
−
−
−
−
−
, t
Output Disable Time,
OE to Y
(Figures 3 and 4)
C = 30 pF
−
−
PHZ PLZ
L
1
R = R = 1 kW
L
1.10 to 1.30
1.40 to 1.60
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
−
5.0
3.0
2.0
1.5
1.0
9.5
5.5
5.6
4.2
3.9
−
14.0
7.0
5.8
5.0
4.2
−
−
−
−
−
−
−
−
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Input Capacitance
Output Capacitance
Power Dissipation Capacitance (Note 5)
Test Condition
Typical (T = 25°C)
Unit
pF
A
C
V
V
= 0 V
= 0 V
2.0
4.5
20
IN
CC
C
pF
OUT
CC
C
10 MHz, V = 0.9 to 3.6 V, V = 0 V or V
CC
pF
PD
CC
IN
5. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
PD
Average operating current can be obtained by the equation I
) = C ꢀ V ꢀ f + I . C is used to determine the no−load dynamic
CC(OPR
PD CC in CC PD
2
power consumption: P = C ꢀ V
ꢀ f + I ꢀ V
.
D
PD
CC
in
CC
CC
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5
NL17SV125
OPEN
Test
/ t
Switch Position
2 x V
DUT
GND
CC
t
Open
PLH PHL
t
/ t
2 x V
CC
PLZ PZL
R
1
L
t
/ t
GND
PHZ PZH
INPUT
OUTPUT
R
R
C *
L
T
C includes probe and jig capacitance
L
R is Z
of pulse generator (typically 50 W)
T
OUT
f = 1 MHz
Figure 3. Test Circuit
V
CC
t = 3 ns
r
t = 3 ns
f
V
CC
90%
90%
INPUT
V
mi
V
mi
V
mi
V
mi
INPUT
GND
~V
10%
10%
GND
t
t
PLZ
PZL
t
t
PLH
PHL
CC
V
OH
V
V
OUTPUT
OUTPUT
mo
V
V
V
V
OUTPUT
OUTPUT
mo
mo
V
+ V
OL
OL
Y
V
V
V
OL
t
t
PHZ
PZH
t
t
PLH
PHL
V
OH
OH
V
− V
OH
Y
mo
mo
mo
V
OL
~0 V
V , V
mo
t
, t
t
, t , t , t
PZL PLZ PZH PHZ
V
CC
, V
V
mi
, V
V , V
Y
PLH PHL
0.9
V
V
V
V
V
/ 2
/ 2
/ 2
/ 2
/ 2
V
V
V
V
V
/ 2
/ 2
/ 2
/ 2
/ 2
V
V
V
V
V
/ 2
/ 2
/ 2
/ 2
/ 2
0.1
0.1
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
1.1 to 1.3
1.4 to 1.6
0.1
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
0.15
0.15
0.3
1.5
1.5
1.5
Figure 4. Switching Waveforms
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6
NL17SV125
ORDERING INFORMATION
Device
Pin 1 Orientation
(See below)
†
Package
Marking
Shipping
NL17SV125DFT2G
(Contact ON Semiconductor)
SC−88A
CC
Q4
3000 / Tape & Reel
NLV17SV125DFT2G*
SC−88A
CC
Q4
Q4
3000 / Tape & Reel
4000 / Tape & Reel
NL17SV125XV5T2G
(Contact ON Semiconductor)
SOT−553
TBD
NL17SV125P5T5G
SOT−953
SC−74A
TBD
TBD
TBD
TBD
Q2
Q4
Q4
Q4
8000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
(Contact ON Semiconductor)
NL17SV125DBVT1G
(Contact ON Semiconductor)
NL17SV125MU1TCG
(Contact ON Semiconductor)
UDFN6, 1.45 x 1.0, 0.5P
UDFN6, 1.0 x 1.0, 0.35P
NL17SV125MU3TCG
(Contact ON Semiconductor)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
Pin 1 Orientation in Tape and Reel
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7
NL17SV125
PACKAGE DIMENSIONS
SC−74A
CASE 318BQ
ISSUE B
5X b
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
0.20 C A B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE.
M
5
4
E1
1
2
3
0.05
A1
L
B
e
DETAIL A
A
D
MILLIMETERS
DIM
A
A1
b
c
D
E
E1
e
L
M
MIN
0.90
0.01
0.25
0.10
2.85
2.50
1.35
MAX
1.10
0.10
0.50
0.26
3.15
3.00
1.65
TOP VIEW
SIDE VIEW
A
DETAIL A
c
0.95 BSC
SEATING
END VIEW
C
PLANE
0.20
0
0.60
10
_
_
RECOMMENDED
SOLDERING FOOTPRINT*
0.95
PITCH
2.40
5X
1.00
5X
0.70
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
NL17SV125
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
G
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
3
−B−
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
1
2
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
0.026 BSC
0.65 BSC
M
M
B
D 5 PL
0.2 (0.008)
---
0.004
0.004
0.004
0.010
0.012
---
0.10
0.10
0.10
0.25
0.30
N
K
N
S
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
J
C
K
H
SOLDER FOOTPRINT
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
STYLE 3:
STYLE 1:
PIN 1. BASE
STYLE 2:
STYLE 4:
STYLE 5:
PIN 1. ANODE
2. EMITTER
3. BASE
PIN 1. ANODE 1
2. N/C
PIN 1. SOURCE 1
2. DRAIN 1/2
3. SOURCE 1
4. GATE 1
PIN 1. CATHODE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR
2. COMMON ANODE
3. CATHODE 2
4. CATHODE 3
5. CATHODE 4
3. ANODE 2
4. CATHODE 2
5. CATHODE 1
4. COLLECTOR
5. CATHODE
5. GATE 2
STYLE 9:
STYLE 6:
PIN 1. EMITTER 2
2. BASE 2
STYLE 7:
STYLE 8:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. ANODE
5. ANODE
PIN 1. BASE
2. EMITTER
3. BASE
PIN 1. CATHODE
2. COLLECTOR
3. N/C
3. EMITTER 1
4. COLLECTOR
5. COLLECTOR 2/BASE 1
4. COLLECTOR
5. COLLECTOR
4. BASE
5. EMITTER
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9
NL17SV125
PACKAGE DIMENSIONS
SOT−553, 5 LEAD
CASE 463B
ISSUE C
NOTES:
D
−X−
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
L
5
4
3
MILLIMETERS
INCHES
NOM
0.022
0.009
0.005
E
−Y−
DIM
A
b
c
D
E
e
L
H
MIN
0.50
0.17
0.08
1.55
1.15
NOM
0.55
MAX
MIN
MAX
0.024
0.011
0.007
0.065
0.049
H
E
0.60
0.27
0.18
1.65
1.25
0.020
0.007
0.003
0.061
0.045
1
2
0.22
0.13
1.60
0.063
0.047
b 5 PL
c
1.20
e
M
0.50 BSC
0.20
1.60
0.020 BSC
0.008
0.063
0.08 (0.003)
X Y
0.10
1.55
0.30
1.65
0.004
0.061
0.012
0.065
E
RECOMMENDED
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1. ANODE 1
2. N/C
STYLE 4:
STYLE 5:
PIN 1. BASE
PIN 1. CATHODE
PIN 1. SOURCE 1
2. DRAIN 1/2
3. SOURCE 1
4. GATE 1
PIN 1. ANODE
2. EMITTER
3. BASE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR
2. COMMON ANODE
3. CATHODE 2
4. CATHODE 3
5. CATHODE 4
3. ANODE 2
4. CATHODE 2
5. CATHODE 1
4. COLLECTOR
5. CATHODE
5. GATE 2
STYLE 9:
STYLE 6:
PIN 1. EMITTER 2
2. BASE 2
STYLE 7:
PIN 1. BASE
STYLE 8:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. ANODE
5. ANODE
PIN 1. CATHODE
2. COLLECTOR
3. N/C
2. EMITTER
3. EMITTER 1
4. COLLECTOR 1
5. COLLECTOR 2/BASE 1
3. BASE
4. COLLECTOR
5. COLLECTOR
4. BASE
5. EMITTER
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10
NL17SV125
PACKAGE DIMENSIONS
UDFN6, 1.45x1.0, 0.5P
CASE 517AQ
ISSUE O
A
B
D
L
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
L1
DETAIL A
PIN ONE
REFERENCE
OPTIONAL
E
MILLIMETERS
CONSTRUCTIONS
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
A
0.10
C
EXPOSED Cu
MOLD CMPD
A2
b
0.07 REF
0.20
1.45 BSC
TOP VIEW
0.30
0.10
C
D
E
e
1.00 BSC
0.50 BSC
DETAIL B
L
L1
0.30
−−−
0.40
0.15
DETAIL B
OPTIONAL
0.05
0.05
C
C
CONSTRUCTIONS
A
6X
A1
SEATING
PLANE
A2
C
SIDE VIEW
e
6X L
3
1
DETAIL A
6
4
6X b
0.10 C A B
NOTE 3
C
0.05
BOTTOM VIEW
MOUNTING FOOTPRINT
6X
0.30
PACKAGE
OUTLINE
1.24
6X
0.53
1
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
11
NL17SV125
PACKAGE DIMENSIONS
UDFN6, 1x1, 0.35P
CASE 517BX
ISSUE O
NOTES:
A B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM TERMINAL TIP.
4. PACKAGE DIMENSIONS EXCLUSIVE OF
BURRS AND MOLD FLASH.
PIN ONE
REFERENCE
E
2X
0.10
C
MILLIMETERS
DIM MIN
MAX
0.55
0.05
A
A1
A3
b
0.45
0.00
0.13 REF
2X
0.10
C
TOP VIEW
0.12
0.22
A3
D
E
e
L
1.00 BSC
1.00 BSC
0.35 BSC
0.05
C
C
A
0.25
0.30
0.35
0.40
L1
0.05
A1
SEATING
PLANE
C
SIDE VIEW
e
5X L
3
1
L1
6
4
6X b
M
0.10
C A B
M
NOTE 3
C
0.05
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
05.4X8
6X
0.22
1.18
1
0.35
0.53
PITCH
PKG
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
12
NL17SV125
PACKAGE DIMENSIONS
SOT−953
CASE 527AE
ISSUE E
NOTES:
X
Y
D
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
A
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
5
4
3
PIN ONE
H
E
INDICATOR
E
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
MAX
0.40
0.20
0.17
1.05
0.85
A
b
0.34
0.10
0.07
0.95
0.75
C
TOP VIEW
e
C
D
SIDE VIEW
E
e
0.80
0.35 BSC
HE
L
L2
L3
0.95
1.00
0.175 REF
0.10
1.05
5X
L
0.05
−−−
0.15
0.15
−−−
5X
5X
L3
L2
5X
b
0.08 X
Y
BOTTOM VIEW
SOLDERING FOOTPRINT*
5X
0.35
5X
0.20
PACKAGE
OUTLINE
1.20
1
0.35
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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