NL27WZ02MU1TCG [ONSEMI]
Dual 2-Input NOR Gate;
| 型号： | NL27WZ02MU1TCG |
| 厂家： | 
ONSEMI |
| 描述： | Dual 2-Input NOR Gate 栅 光电二极管 逻辑集成电路 触发器 |
| 文件： | 总11页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NL27WZ02
Dual 2-Input NOR Gate
The NL27WZ02 is a high performance dual 2−input NOR Gate
operating from a 1.65 V to 5.5 V supply.
Features
• Designed for 1.65 V to 5.5 V V Operation
CC
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• 2.7 ns t at V = 5 V (typ)
PD
CC
• Inputs/Outputs Overvoltage Tolerant up to 5.5 V
MARKING
DIAGRAMS
• I
Supports Partial Power Down Protection
• Source/Sink 24 mA at 3.0 V
OFF
• Available in US8, UDFN8 and UQFN8 Packages
• Chip Complexity < 100 FETs
XX M
G
US8
US SUFFIX
CASE 493
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
UDFN8, 1.45x1.0
MU3 SUFFIX
CASE 517BZ
X M
1
A1
UDFN8, 1.95x1.0
MU1 SUFFIX
CASE 517CA
≥1
Y1
Y2
X M
XM
B1
A2
B2
1
UQFN8, 1.4x1.2
MQ2 SUFFIX
CASE 523AS
Figure 1. Logic Symbol
1
1
UQFN8, 1.6x1.6
MQ1 SUFFIX
CASE 523AN
XX MG
8
1
X, XX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
January, 2019 − Rev. 13
NL27WZ02/D
NL27WZ02
A1
7
B1
6
Y2
5
A1
B1
1
2
3
4
8
7
6
5
V
CC
A1
B1
1
2
8
7
V
CC
V
GND
4
CC
Y1
B2
A2
Y1
B2
A2
8
Y2
3
4
6
5
Y2
1
Y1
2
B2
3
A2
GND
GND
UQFN8
US8
UDFN8
Figure 2. Pinout
PIN ASSIGNMENT
FUNCTION TABLE
Pin
Function
Output
Y = A + B
Inputs
1
A1
A
L
B
L
Y
H
L
2
3
4
5
6
7
8
B1
Y2
L
H
L
GND
A2
H
H
L
H
L
B2
H = HIGH Logic Level
L = LOW Logic Level
Y1
V
CC
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2
NL27WZ02
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
V
V
CC
DC Supply Voltage
DC Input Voltage
DC Output Voltage
−0.5 to +6.5
−0.5 to +6.5
V
V
IN
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
−0.5 to V + 0.5
V
CC
−0.5 to +6.5
−0.5 to +6.5
Power−Down Mode (V = 0 V)
CC
I
DC Input Diode Current
V
< GND
< GND
−50
−50
mA
mA
mA
mA
°C
IK
IN
I
DC Output Diode Current
V
OUT
OK
I
DC Output Source/Sink Current
DC Supply Current per Supply Pin or Ground Pin
Storage Temperature Range
50
OUT
I
or I
100
CC
GND
T
−65 to +150
260
STG
T
Lead Temperature, 1 mm from Case for 10 secs
Junction Temperature Under Bias
Thermal Resistance (Note 2)
°C
L
T
+150
°C
J
q
US8
UQFN8
UDFN8
250
208
111
°C/W
JA
P
D
Power Dissipation in Still Air
US8
UDFN8
UQFN8
250
601
1127
mW
MSL
Moisture Sensitivity
Level 1
−
−
V
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage (Note 3)
Human Body Model
Charged Device Model
2000
1000
I
Latchup Performance (Note 4)
$100
mA
Latchup
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Applicable to devices with outputs that may be tri−stated.
2. Measured with minimum pad spacing on an FR4 board, using 10mm−by−1inch, 2 ounce copper trace no air flow.
3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recommends that ESD qualification to
EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A.
4. Tested to EIA/JESD78 Class II.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
1.65
0
Max
5.5
Unit
V
V
CC
Positive DC Supply Voltage
DC Input Voltage
V
IN
5.5
V
V
OUT
DC Output Voltage
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
0
0
0
V
CC
5.5
5.5
Power−Down Mode (V = 0 V)
CC
T
Operating Temperature Range
Input Rise and Fall Time
−55
+125
°C
A
t , t
r
V = 1.65 V to 1.95 V
CC
0
0
0
0
20
20
10
5
ns/V
f
V
CC
V
CC
V
CC
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
NL27WZ02
DC ELECTRICAL CHARACTERISTICS
T
A
= 255C
Typ
−555C 3 T 3 1255C
A
V
(V)
CC
Min
Max
Min
Max
Symbol
Parameter
Condition
Units
1.65 to 1.95 0.65 V
−
−
−
−
−
−
0.65 V
−
−
V
High−Level Input
V
CC
CC
CC
IH
Voltage
2.3 to 5.5
1.65 to 1.95
2.3 to 5.5
0.70 V
0.70 V
CC
−
−
0.35 V
−
−
0.35 V
V
Low−Level Input
Voltage
V
V
CC
CC
IL
0.30 V
0.30 V
CC
CC
V
OH
High−Level Output
Voltage
V
= V or V
IH IL
IN
I
= −100 mA
= −4 mA
1.65 to 5.5
1.65
2.3
V
CC
− 0.1
V
−
−
−
−
−
−
−
V − 0.1
CC
1.29
−
−
−
−
−
−
−
OH
OH
CC
I
1.29
1.4
I
= −8 mA
1.9
2.2
2.4
2.3
3.8
1.9
2.2
2.4
2.3
3.8
OH
2.1
2.4
2.7
2.5
4.0
I
= −12 mA
= −16 mA
= −24 mA
= −32 mA
2.7
OH
I
3.0
OH
I
3.0
OH
I
4.5
OH
V
OL
Low−Level Output
Voltage
V
= V or V
V
IN
IH
IL
I
= 100 mA
= 4 mA
1.65 to 5.5
1.65
2.3
−
−
−
−
−
−
−
−*
0.08
0.2
0.22
0.28
0.38
0.42
0.1
0.24
0.3
0.4
0.4
0.55
0.55
−
−
−
−
−
−
−
0.1
0.24
0.3
0.4
0.4
0.55
0.55
OL
OL
I
I
OL
= 8 mA
OL
I
= 12 mA
= 16 mA
= 24 mA
= 32 mA
2.7
I
3.0
OL
I
3.0
OL
I
4.5
OL
I
Input Leakage Current
V
= 5.5 V or GND
= 5.5 V or
1.65 to 5.5
0
−
−
−
−
0.1
1.0
−
−
1.0
10
mA
mA
IN
IN
I
Power Off Leakage
Current
V
V
OFF
IN
OUT
= 5.5 V
I
Quiescent Supply
Current
V
IN
= V or GND
5.5
−
−
1.0
−
10
mA
CC
CC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)
r
f
T
A
= 25°C
Typ
7.4
T = −55 to 125°C
A
Min
−
Max
9.5
5.4
3.9
3.1
4.8
3.7
Min
−
Max
9.7
5.8
4.3
3.3
5.2
4.0
Symbol
Parameter
V
(V)
Test Conditions
C = 15 pF
Units
CC
t
,
Propagation Delay
1.8 0.15
2.5 0.2
3.3 0.3
5.0 0.5
3.3 0.3
5.0 0.5
ns
PLH
L
t
R = 1 MW
PHL
D
−
3.3
−
R = Open
1
−
2.6
−
−
1.9
−
C = 50 pF,
−
3.2
−
L
D
R
= 500 W, R = Open
1
−
2.5
−
CAPACITIVE CHARACTERISTICS (t = t = 3.0 ns)
R
F
Symbol
Parameter
Input Capacitance
Output Capacitance
Condition
Typical
2.5
Units
pF
C
V
V
= 5.5 V, V = 0 V or V
IN
IN
CC
CC
CC
C
= 5.5 V, V = 0 V or V
2.5
pF
OUT
CC
IN
C
Power Dissipation Capacitance
(Note 5)
10 MHz, V = 3.3 V, V = 0 V or V
CC
9
11
pF
PD
CC
IN
10 MHz, V = 5.5 V, V = 0 V or V
CC
IN
CC
5. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
PD
Average operating current can be obtained by the equation: I
) = C ꢀ V ꢀ f + I . C is used to determine the no−load dynamic
CC(OPR
PD CC in CC PD
2
power consumption; P = C ꢀ V
ꢀ f + I ꢀ V
.
D
PD
CC
in
CC
CC
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4
NL27WZ02
OPEN
Test
Switch
C , pF
L
R , W R , W
L 1
2 x V
DUT
GND
Position
CC
t
/ t
Open
See AC Characteristics Table
PLH PHL
R
1
L
t
/ t
2 x V
50
50
500
500
500
500
PLZ PZL
CC
t
/ t
GND
OUTPUT
PHZ PZH
X = Don’t Care
R
R
T
C *
L
C includes probe and jig capacitance
L
R is Z
of pulse generator (typically 50 W)
T
OUT
f = 1 MHz
Figure 3. Test Circuit
V
CC
t = 3 ns
r
t = 3 ns
f
V
CC
90%
90%
INPUT
V
mi
V
mi
V
mi
V
mi
INPUT
GND
~V
10%
10%
GND
t
t
PLZ
PZL
t
t
PLH
PHL
CC
V
OH
V
OUTPUT
OUTPUT
mo
V
V
V
V
OUTPUT
OUTPUT
mo
mo
V
OL
+ V
OL
Y
V
V
V
OL
t
t
PHZ
PZH
t
t
PLH
PHL
V
OH
Y
OH
V
OH
− V
V
mo
mo
mo
V
OL
~0 V
Figure 4. Switching Waveforms
V , V
mo
t
, t
t
, t , t , t
PZL PLZ PZH PHZ
V
CC
, V
V
mi
, V
V , V
Y
PLH PHL
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
V
CC
V
CC
V
CC
V
CC
/2
/2
/2
/2
(V − V )/2
V
CC
V
CC
V
CC
V
CC
/2
/2
/2
/2
0.15
0.15
0.3
OH
OL
(V − V )/2
OH
OL
(V − V )/2
OH
OL
(V − V )/2
0.3
OH
OL
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5
NL27WZ02
DEVICE ORDERING INFORMATION
Pin 1 Orientation
(See below)
†
Device
Packages
Specific Device Code
Shipping
NL27WZ02USG
US8
US8
L3
L1
Q4
Q4
3000 / Tape & Reel
3000 / Tape & Reel
NLV27WZ02USG*
(In Development)
NL27WZ02MQ1TCG
(In Development)
UQFN8, 1.6 x 1.6, 0.5P
UDFN8, 1.95 x 1.0, 0.5P
UDFN8, 1.45 x 1.0, 0.5P
UQFN8, 1.4 x 1.2, 0.5P
SM8
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
NL27WZ02MU1TCG
(In Development)
NL27WZ02MU3TCG
(In Development)
NL27WZ02MQ2TCG
(In Development)
NL27WZ02
(In Development)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
Pin 1 Orientation in Tape and Reel
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6
NL27WZ02
PACKAGE DIMENSIONS
US8
US SUFFIX
CASE 493−02
ISSUE B
−X−
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
8
5
J
−Y−
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION “A” DOES NOT INCLUDE MOLD
FLASH, PROTRUSION OR GATE BURR.
MOLD FLASH. PROTRUSION AND GATE
BURR SHALL NOT EXCEED 0.140 MM
(0.0055”) PER SIDE.
4. DIMENSION “B” DOES NOT INCLUDE
INTER−LEAD FLASH OR PROTRUSION.
INTER−LEAD FLASH AND PROTRUSION
SHALL NOT E3XCEED 0.140 (0.0055”) PER
SIDE.
DETAIL E
B
L
5. LEAD FINISH IS SOLDER PLATING WITH
THICKNESS OF 0.0076−0.0203 MM.
(300−800 “).
6. ALL TOLERANCE UNLESS OTHERWISE
SPECIFIED 0.0508 (0.0002 “).
1
4
R
G
S
U
P
MILLIMETERS
INCHES
DIM
A
B
C
D
F
G
H
J
K
L
M
N
P
R
S
MIN
1.90
2.20
0.60
0.17
0.20
0.50 BSC
0.40 REF
0.10
MAX
2.10
2.40
0.90
0.25
0.35
MIN
MAX
0.083
0.094
0.035
0.010
0.014
C
0.075
0.087
0.024
0.007
0.008
0.020 BSC
0.016 REF
H
−T−
0.10 (0.004)
T
K
SEATING
D
N
PLANE
R 0.10 TYP
M
0.10 (0.004)
T
X Y
0.18
0.10
3.20
6
0.004
0.007
0.004
0.126
6
V
0.00
3.00
0
0.000
0.118
0
M
_
_
_
_
5
10
5
10
_
_
_
_
0.23
0.23
0.37
0.60
0.34
0.33
0.47
0.80
0.010
0.009
0.015
0.024
0.013
0.013
0.019
0.031
F
DETAIL E
U
V
0.12 BSC
0.005 BSC
SOLDERING FOOTPRINT*
3.8
0.015
1.8
0.07
0.50
0.0197
0.30
0.012
1.0
0.0394
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
7
NL27WZ02
PACKAGE DIMENSIONS
UDFN8, 1.45x1, 0.35P
CASE 517BZ
ISSUE O
NOTES:
A B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM TERMINAL TIP.
4. PACKAGE DIMENSIONS EXCLUSIVE OF
BURRS AND MOLD FLASH.
PIN ONE
REFERENCE
E
2X
0.10
C
MILLIMETERS
DIM MIN
MAX
0.55
0.05
A
A1
A3
b
0.45
0.00
0.13 REF
2X
0.10
C
TOP VIEW
SIDE VIEW
0.15
0.25
A3
0.05
C
C
D
1.45 BSC
E
e
1.00 BSC
0.35 BSC
A
L
L1
0.25
0.30
0.35
0.40
0.05
A1
RECOMMENDED
SEATING
PLANE
C
SOLDERING FOOTPRINT*
7X
8X
0.48
0.22
e/2
e
7X L
4
1
8
L1
1.18
1
5
0.53
0.35
8X b
PKG
PITCH
M
OUTLINE
0.10
C A B
DIMENSIONS: MILLIMETERS
M
NOTE 3
C
0.05
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
8
NL27WZ02
PACKAGE DIMENSIONS
UDFN8, 1.95x1, 0.5P
CASE 517CA
ISSUE O
NOTES:
A B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM TERMINAL TIP.
4. PACKAGE DIMENSIONS EXCLUSIVE OF
BURRS AND MOLD FLASH.
PIN ONE
REFERENCE
E
2X
0.10
C
MILLIMETERS
DIM MIN
MAX
0.55
0.05
A
A1
A3
b
0.45
0.00
0.13 REF
2X
0.10
C
TOP VIEW
SIDE VIEW
0.15
0.25
A3
0.05
C
C
D
1.95 BSC
E
e
1.00 BSC
0.50 BSC
A
L
L1
0.25
0.30
0.35
0.40
0.05
A1
SEATING
PLANE
RECOMMENDED
C
SOLDERING FOOTPRINT*
07.4X9
8X
0.30
e/2
e
4
7X L
1
L1
1.24
8
5
1
8X b
0.54
0.50
PITCH
PKG
M
M
OUTLINE
0.10
0.05
C A B
DIMENSIONS: MILLIMETERS
NOTE 3
C
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
9
NL27WZ02
PACKAGE DIMENSIONS
UQFN8, 1.4x1.2, 0.4P
CASE 523AS
ISSUE A
NOTES:
L
L
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM THE TERMINAL TIP.
L1
PIN ONE
REFERENCE
DETAIL A
E
MILLIMETERS
2X
ALTERNATE
0.10
0.10
C
CONSTRUCTIONS
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
A
2X
C
TOP VIEW
EXPOSED Cu
MOLD CMPD
A3
b
0.13 REF
0.15
0.25
D
E
e
L
1.40 BSC
1.20 BSC
0.40 BSC
A
DETAIL B
(A3)
DETAIL B
0.05
0.05
C
C
0.20
−−−
0.40
0.15
0.50
ALTERNATE
L1
L2 0.30
CONSTRUCTION
8X
A1
SOLDERING FOOTPRINT*
SEATING
PLANE
C
SIDE VIEW
1.61
0.55
L
L2
2
4
DETAIL A
1
7X
0.45
1
1.40
8
6
e
6X b
M
M
0.10
0.05
C A B
0.40
C
NOTE 3
BOTTOM VIEW
PITCH
8X
0.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
10
NL27WZ02
PACKAGE DIMENSIONS
UQFN8, 1.6x1.6, 0.5P
CASE 523AN
ISSUE O
NOTES:
A
B
D
MOLD CMPD
EXPOSED Cu
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
PIN ONE
A3
REFERENCE
E
2X
MILLIMETERS
A1
0.10
C
DETAIL B
DIM MIN
0.45
A1 0.00
MAX
0.60
0.05
OPTIONAL
A
2X
CONSTRUCTION
0.10
C
A3
b
D
0.13 REF
0.15
0.25
TOP VIEW
1.60 BSC
L1
L3
E
e
1.60 BSC
0.50 BSC
A
(A3)
DETAIL B
L
L1
0.35
−−−
0.45
0.15
0.05
C
C
L3 0.25
0.35
b
(0.15)
0.05
SOLDERING FOOTPRINT*
(0.10)
SIDE VIEW
SEATING
PLANE
DETAIL A
C
A1
OPTIONAL
1.70
0.50
PITCH
CONSTRUCTION
8X
1
L3
8X L
e
5
3
1
0.35
1.70
7
8
DETAIL A
8X b
7X
0.25
8X
0.10 C A B
0.53
NOTE 3
C
0.05
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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