NLAS3257AMU3TCG [ONSEMI]
Mux / Demux Analog Switch;
| 型号： | NLAS3257AMU3TCG |
| 厂家： | 
ONSEMI |
| 描述： | Mux / Demux Analog Switch |
| 文件： | 总8页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NLAS3257A
Mux / Demux Analog Switch
The NLAS3257A Mux / Demux Analog Switch is an advanced
high−speed single pole double throw (SPDT) analog switch in
ultra−small footprint.
Features
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MARKING
• High Speed: t = 0.25 ns (Max) @ V = 4.5 V
PD
CC
• R : 7.5 ꢀ, Typ @ V = 4.2 V
ON
CC
DIAGRAM
• C : 7.5 pF, Typ @ V = 3.3 V
ON
CC
• V Range: 1.65 V to 4.5 V
CC
UDFN6
1.0 x 1.0
• Ultra−Small 1 x 1 mm Package
AGM
CASE 517EC
1
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
AG = Specific Device Code
= Date Code
M
Typical Applications
• Mobile Phones, PDAs, Camera
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
B1
GND
B0
1
2
3
6
5
4
S
V
A
CC
Figure 1. UDFN6
(Top View)
A
S
B0
B1
Figure 2. Logic Diagram
Function Table
Input S
Function
A = B0
L
H
A = B1
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
December, 2018 − Rev. 1
NLAS3257A/D
NLAS3257A
Table 1. MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
CC
DC Supply Voltage
−0.5 to +5.5
−0.5 to +5.5
V
Control Input Voltage (S Pin)
V
IN
I/O
IK
V
Switch Input / Output Voltage (A, B0, B1 Pins)
Control Pin DC Input Diode Current (S Pin)
Switch I/O Port DC Diode Current (A, B0, B1 Pins)
On−State Switch Current
−0.5 to V + 0.5
V
CC
I
V
< GND
−50
mA
mA
mA
mA
mA
mA
°C
IN
I
V
< GND or V > V
CC
50
OK
I/O
I/O
I
O
128
Continuous Current Through V or GND
150
CC
I
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
150
CC
I
150
GND
T
STG
−65 to +150
T
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance (Note 1)
260
°C
L
T
150
°C
J
ꢁ
466
269
°C/W
mW
JA
P
D
Power Dissipation in Still Air at 85°C (Note 1)
Moisture Sensitivity
MSL
Level 1
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
>6000
>200
V
Charged Device Model (Note 4)
>2000
I
Latchup Performance Above V and Below GND at 85°C (Note 5)
100
mA
LATCHUP
CC
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA/ JESD22−A114−A
3. Tested to EIA/ JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA / JESD78.
Table 2. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
1.65
0
Max
4.5
Unit
V
V
CC
Positive DC Supply Voltage
V
I
Control Pin Input Voltage (S Pin)
4.5
V
V
Switch Input / Output Voltage (A, B0, B1 Pins)
Operating Free−Air Temperature
0
V
V
I/O
CC
T
−40
+85
°C
ns/V
A
ꢂ
t
/
ꢂ
V
Input Transition Rise or Fall Rate
Control Input
Switch I/O
0
0
20
DC
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NLAS3257A
Table 3. DC ELECTRICAL CHARACTERISTICS (Typical: T = 25°C, V = 3.3 V)
CC
T
A
= −405C to +855C
Min
Typ
Max
Symbol
Parameter
Test Conditions
V
CC
(V)
Unit
V
IH
Control Input, High Voltage
(S Pin)
2.7
3.3
4.2
0.95
1.0
1.25
V
V
IL
Control Input, Low Voltage
(S Pin)
2.7
3.3
4.2
0.3
0.4
0.5
V
I
Control Input, Leakage
Current (S Pin)
0 ≤ V ≤ V
CC
1.65 − 4.5
0.5
20
1.0
ꢃ
A
IN
IN
I
Off State Leakage Current
(B0/B1 Pins)
V
B0
= V or V
IH
B1
V = 4 V
4.5
100
nA
B0/B1_OFF
IN
IL
V
and V = 0.3 V
A
I
On State Leakage Current
(A Pin)
V
= V or V
IH
4.5
20
100
nA
A_ON
IN
IL
V
= 0.3 V or 4 V with
B0
V
= Floating
or
B1
V
= 0.3 V or 4 V with
= Floating
A
B1
V
B0
V = 0.3 V or 4.0 V
I
Power Off Leakage
Current (S Pin)
V
= 0 or 4.5 V
0
100
1.0
nA
Power_OFF
IN
I
Quiescent Supply Current
(V Pin)
CC
V
V
= V or GND,
1.65 − 4.5
0.1
ꢃ
A
CC
IN
IS
CC
= V or GND,
CC
Load
I
= 0 A
ꢂ I
CC
Additional Quiescent
V
IN
V
IS
= V or GND,
3.3
4.2
2.0
3.0
mA
CC
Supply Current (V Pin)
= V or GND,
CC
CC
= 0 A
I
Load
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. ON RESISTANCE (Typical: T = 25°C)
T
A
= −405C to +855C
Min
Typ
Max
Symbol
Parameter
ON−Resistance
Test Conditions
V
CC
(V)
Unit
R
I
= 8 mA,
2.7
3.3
4.2
9.3
8.7
7.5
ꢀ
ON
ON
V
V
V
= 0 V to V
IS
CC
R
ON−Resistance Flatness
Delta ON− Resistance
I
IS
= 8 mA,
2.7
3.3
4.2
3.6
3.3
2.9
ꢀ
ꢀ
FLAT
ON
= 0 V to V
CC
ꢂ
R
I
IS
= 8 mA,
2.7
3.3
4.2
0.8
0.7
0.5
ON
ON
= 0 V to V
CC
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3
NLAS3257A
AC ELECTRICAL CHARACTERISTICS
Table 5. TIMING/FREQUENCY (Typical: T = 25°C, V = 3.3 V, R = 50 ꢀ, C = 5 pF, f = 1 MHz)
CC
L
L
T
A
= −405C to +855C
Min
Typ
Max
Symbol
Parameter
Test Condition
V
CC
(V)
Unit
t
Propagation Delay,
A to Bn or Bn to A
1.65 − 4.5
0.25
ns
PD
t
Turn−ON Time
(See Figures 4 and 5)
(See Figures 4 and 5)
(See Figure 3)
1.65 − 4.5
1.65 − 4.5
1.65 − 4.5
1.65 − 4.5
35
25
ns
ns
ON
t
Turn−OFF Time
OFF
t
Break−Before−Make Time
−3 dB Bandwidth
2.0
ns
BBM
BW
C = 5 pF
L
900
MHz
Table 6. ISOLATION (Typical: T = 25°C, V = 3.3 V, R = 50 ꢀ, C = 5 pF)
CC
L
L
T
A
= −405C to +855C
Min
Typ
Max
Symbol
Parameter
OFF−Isolation
Test Condition
V
(V)
Unit
CC
O
f = 240 MHz
(See Figure 6)
1.65 − 4.5
−21
dB
IRR
X
TALK
Non−Adjacent Channel
Crosstalk
f = 240 MHz
1.65 − 4.5
−21
dB
Table 7. CAPACITANCE (Typical: T = 25°C, V = 3.3 V, f = 1 MHz)
CC
T
A
= −405C to +855C
Min
Typ
Max
2.0
Symbol
Parameter
Control Input Capacitance
ON Capacitance
Test Condition
Unit
pF
C
S pin
IN
C
Switch ON
7.5
pF
ON
A to B0
A to B1
C
OFF Capacitance
Switch OFF
B0 OFF
B1 OFF
2.5
pF
OFF
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4
NLAS3257A
V
CC
DUT
Input
GND
V
Output
CC
V
OUT
0.1 ꢃ F
t
BMM
50 ꢀ
35 pF
90%
90% of V
OH
Output
Switch Select Pin
GND
Figure 3. tBBM (Time Break−Before−Make)
V
CC
Input
50%
50%
90%
DUT
0 V
V
CC
Output
V
OUT
V
0.1 ꢃ F
OH
Open
90%
50 ꢀ
35 pF
Output
V
OL
Input
t
t
OFF
ON
Figure 4. tON/tOFF
V
CC
V
CC
Input
50%
50%
DUT
0 V
50 ꢀ
Output
V
OUT
V
OH
Open
35 pF
Output
V
10%
10%
OL
Input
t
t
ON
OFF
Figure 5. tON/tOFF
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5
NLAS3257A
50 ꢀ
DUT
Reference
Input
50 ꢀ Generator
Transmitted
Output
50 ꢀ
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is
the bandwidth of an On switch. V , Bandwidth and V are independent of the input signal direction.
ISO
ONL
V
OUT
= Off Channel Isolation = 20 Log ǒ Ǔ for V
V
V
at 100 kHz
IN
ISO
V
IN
OUT
V
= On Channel Loss = 20 Log ǒ Ǔ for V
at 100 kHz to 50 MHz
ONL
IN
V
IN
Bandwidth (BW) = the frequency 3 dB below V
ONL
V
CT
= Use V
setup and test to all other switch analog input/outputs terminated with 50 ꢀ
ISO
Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/VONL
DEVICE ORDERING INFORMATION
Device
†
Package
Shipping
NLAS3257AMU3TCG
UDFN6 − 1.0 x 1.0, 0.35P
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6 1x1, 0.35P
CASE 517EC
ISSUE O
DATE 09 NOV 2018
GENERIC
MARKING DIAGRAM*
XXM
XX
M
= Specific Device Code
= Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON00214H
UDFN6 1x1, 0.35P
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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