NLAS4783BMN1R2G [ONSEMI]

Triple SPDT 1.0 ohm RON Switch; 三重SPDT 1.0欧姆RON开关
NLAS4783BMN1R2G
型号: NLAS4783BMN1R2G
厂家: ONSEMI    ONSEMI
描述:

Triple SPDT 1.0 ohm RON Switch
三重SPDT 1.0欧姆RON开关

复用器 开关 复用器或开关 信号电路 光电二极管 输出元件
文件: 总10页 (文件大小:86K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NLAS4783B  
Triple SPDT 1.0 W RON  
Switch  
The NLAS4783B is a triple independent low R  
SPDT analog  
ON  
switch with ENABLE. This device is designed for low operating  
voltage, high current switching of speaker output for cell phone  
applications. It can switch a balanced stereo output. The NLAS4783B  
can handle a balanced microphone/speaker/ring−tone generator in a  
monophone mode. The device contains a break−before−make feature.  
http://onsemi.com  
MARKING  
DIAGRAM  
Features  
16  
Single Supply Operation  
1
1.65 to 4.5 V V  
CC  
NLAB  
4783  
ALYWG  
G
Function Directly from LiON Battery  
Tiny 3 x 3 mm 16−Pin QFN Package  
Meets JEDEC MO−220 Specifications  
Low Static Power  
OVT on Logic Address and Enable Inputs  
This is a Pb−Free Device*  
QFN−16  
CASE 485AE  
1
A
L
Y
= Assembly Location  
= Wafer Lot  
= Year  
W = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Typical Applications  
Cell Phone Speaker/Microphone Switching  
Ringtone−Chip/Amplifier Switching  
Three Unbalanced (Single−Ended) Switches  
Stereo Balanced (Push−Pull) Switching  
PIN CONNECTIONS  
Y0 Y1 Vcc  
Y
16  
15  
14  
13  
Important Information  
ESD Protection:  
Human Body Model (HBM) > 8000 V  
Machine Model (MM) > 400 V  
Ringtone−Chip/Amplifier Switching  
1
2
3
4
12  
11  
10  
9
Z1  
Z
X
X1  
X0  
A
Continuous Current Rating Through each Switch 300 mA  
Conforms to: JEDEC MO−220, Issue H, Variation VEED−6  
Pin−for−Pin Compatible with MAX4783  
Z0  
ENABLE  
5
6
7
8
NC GND  
C
B
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 0  
NLAS4783B/D  
NLAS4783B  
X, Y, or Z  
X0, Y0, or Z0  
ENABLE  
LOGIC  
X1, Y1, or Z1  
A, B, or C  
Figure 1. Input Equivalent Circuit  
PIN FUNCTION DESCRIPTION  
QFN PIN #  
Symbol  
Description  
15  
16  
1
Y1  
Analog Switch Y Normally Open Input  
Analog Switch Y Normally Closed Input  
Analog Switch Z Normally Open Input  
Analog Switch Z Output  
Y0  
Z1  
2
Z
3
Z0  
Analog Switch Z Normally Closed Input  
4
ENABLE  
Digital Enable Input. Normally connect to GND. Drive to logic high to set all switches off.  
No Connection. Not internally connected.  
Ground  
5
NC  
GND  
C
6
7
Digital Address C Input  
8
B
Digital Address B Input  
9
A
Digital Address A Input  
10  
11  
12  
13  
14  
X0  
X1  
X
Analog Switch X Normally Closed Input  
Analog Switch X Normally Open Input  
Analog Switch X Output  
Y
Analog Switch Y Output  
V
Positive Analog and Digital Supply Voltage Input  
CC  
http://onsemi.com  
2
NLAS4783B  
TRUTH TABLE/SWITCH PROGRAMMING  
Select Input  
C
X
B
X
A
X
Enable Input  
H
All Switches Open  
X−X0  
Y−Y0  
Z−Z0  
L
L
L
L
L
L
L
L
L
L
L
L
L
H
L
X−X1  
Y−Y0  
Z−Z0  
X−X0  
Y−Y1  
Z−Z0  
L
H
H
L
X−X1  
Y−Y1  
Z−Z0  
L
H
L
X−X0  
Y−Y0  
Z−Z1  
H
H
H
H
X−X1  
Y−Y0  
Z−Z1  
L
H
L
X−X0  
Y−Y1  
Z−Z1  
H
H
X−X1  
Y−Y1  
Z−Z1  
H
1. Input and output pins are identical and interchangeable. Both pins can be considered input or output. Bidirectional signal pass.  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Positive DC Supply Voltage  
*0.5 to )5.5  
CC  
V
Analog Input Voltage (V , V , or V  
)
*0.5 to V  
CC  
V
IS  
IN  
NO  
NC  
COM  
V
Digital Select Input Voltage  
*0.5 to )5.5  
$300  
V
I
Continuous DC Current from COM to NC/NO  
mA  
mA  
mA  
anl1  
I
Peak Current from COM to NC/NO, 10 Duty Cycles (Note 2)  
$500  
anl−pk 1  
I
Continuous DC Current into COM/NC/NO with Respect to V or GND  
$100  
clmp  
CC  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
2. Defined as 10% ON, 90% off duty cycle.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
1.65  
Max  
Unit  
V
V
Positive DC Supply Voltage  
4.5  
CC  
V
Analog Input Voltage (V , V , or V  
)
V
V
V
IS  
NO  
NC  
COM  
CC  
CC  
V
Digital Select Input Voltage  
V
IN  
T
Operating Temperature Range  
Input Rise or Fall Time, SELECT  
*40  
85  
°C  
ns/V  
A
t , t  
r
V
V
= 1.6−2.7 V  
= 3.0−4.5 V  
20  
10  
f
CC  
CC  
http://onsemi.com  
3
 
NLAS4783B  
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)  
Guaranteed Limit  
*405C to 255C  
t855C  
Symbol  
Parameter  
Condition  
V
Unit  
CC  
V
Minimum High−Level Input  
Voltage, Select Inputs  
1.65  
2.7  
3.6  
4.3  
1.0  
1.4  
1.8  
2.2  
1.0  
1.4  
1.8  
2.2  
V
IH  
V
Maximum Low−Level Input  
Voltage, Select Inputs  
1.65  
2.7  
3.6  
4.3  
0.4  
0.5  
0.6  
0.8  
0.4  
0.5  
0.6  
0.8  
V
IL  
I
Maximum Input Leakage  
Current, Select Inputs  
V
V
= 4.5 V or GND  
= 4.5 V or GND  
4.3  
$ 0.1  
$ 1.0  
A
IN  
IN  
I
Power Off Leakage Current  
0
$0.5  
$2.0  
A  
A  
OFF  
IN  
I
Maximum Quiescent Supply  
Current (Note 3)  
Select and V = V or GND  
1.65 to 4.5  
$ 1.0  
$ 2.0  
CC  
IS  
CC  
DC ELECTRICAL CHARACTERISTICS − Analog Section  
Guaranteed Maximum Limit  
−405C to 255C  
t855C  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
NC/NO On−Resistance  
Condition  
v V or V w V  
IH  
V
Unit  
CC  
R
ON  
V
V
2.7 − 4.3  
1.0  
1.2  
IN  
IS  
IL  
IN  
(Note 3)  
= GND to V  
CC  
I
I v 100 mA  
IN  
R
FLAT  
NC/NO On−Resistance Flatness  
(Notes 3, 5)  
I
= 100 mA  
2.7 − 4.3  
0.2  
0.2  
COM  
V
= 0 to V  
CC  
IS  
R
On−Resistance Match Between Channels  
(Notes 3 and 4)  
V
= 0.5 V ;  
CC  
= 100 mA  
2.7 − 4.3  
4.3  
0.4  
10  
0.6  
ON  
IS  
I
COM  
I
NC or NO Off Leakage Current (Note 3)  
V
= V or V  
IH  
−10  
−10  
−100  
−100  
100  
nA  
NC(OFF)  
IN  
IL  
I
V
V
or V = 0.3 V  
NO NC  
NO(OFF)  
= 4.0 V  
COM  
I
COM ON  
V
= V or V  
IH  
4.3  
10  
100  
nA  
COM(ON)  
IN  
IL  
Leakage Current  
(Note 3)  
V
V
0.3 V or 4.0 V with  
floating or  
NO  
NC  
V
V
0.3 V or 4.0 V with  
floating  
NC  
NO  
V
= 0.3 V or 4.0 V  
COM  
3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.  
4. R − R between NC1 and NC2 or between NO1 and NO2.  
R
ON = ON(MAX)  
ON(MIN)  
5. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analog  
signal ranges.  
http://onsemi.com  
4
 
NLAS4783B  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)  
r
f
Guaranteed Maximum Limit  
*405C to 255C  
t855C  
V
(V)  
V
IS  
CC  
(V) Min Typ* Max Min Max  
Symbol  
Parameter  
Turn−On Time  
Test Conditions  
R = 50 ꢁ ꢃ C = 35 pF  
Unit  
t
2.3 − 4.5  
1.5  
25  
15  
27  
20  
ns  
ON  
L
L
(Figures 3 and 4)  
t
Turn−Off Time  
R = 50 ꢁ ꢃ C = 35 pF  
2.3 − 4.5  
3.0  
1.5  
ns  
ns  
OFF  
L
L
(Figures 3 and 4)  
V = 3.0  
IS  
t
Minimum Break−Before−Make Time  
BBM  
1.5  
2.0  
8.0  
R = 300 ꢁ ꢃ C = 35 pF  
L
L
(Figure 2)  
Typical @ 25, V = 4.5 V  
CC  
C
Control Pin Input Capacitance  
SN Port Capacitance  
5.0  
75  
pF  
pF  
pF  
IN  
C
SN  
C
D Port Capacitance When Switch is Enabled  
240  
D
*Typical Characteristics are at 25°C.  
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)  
255C  
V
(V)  
CC  
Typical  
Symbol  
Parameter  
Condition  
centered between V and GND  
Unit  
BW  
Maximum On−Channel −3dB  
V
1.65 − 4.5  
17  
MHz  
IN  
CC  
Bandwidth or Minimum Frequency (Figure 5)  
Response  
V
Maximum Feed−through On Loss  
V
V
= 0 dBm @ 100 kHz to 50 MHz  
1.65 − 4.5  
1.65 − 4.5  
1.65 − 4.5  
4.5  
−0.10  
−62  
dB  
dB  
pC  
%
ONL  
IN  
IN  
centered between V and GND (Figure 5)  
CC  
V
Off−Channel Isolation  
f = 100 kHz; V = 1 V RMS; C = 5 nF  
IS L  
ISO  
V
centered between V and GND(Figure 5) (Note 6)  
CC  
IN  
Q
Charge Injection Select Input to  
Common I/O  
V
V
GND, R = 0 , C = 1 nF  
50  
IN = CC to  
IS  
L
Q = C x V  
(Figure 6)  
OUT  
L
THD  
VCT  
Total Harmonic Distortion THD +  
Noise  
F
= 20 Hz to 20 kHz, R = R  
= 600 , C = 50 pF  
0.008  
−62  
IS  
L
gen  
L
V
= 2 V RMS  
IS  
Channel−to−Channel Crosstalk  
f = 100 kHz; V = 1 V RMS, C = 5 pF, R = 50 ꢁ  
1.65 − 4.5  
dB  
IS  
L
L
V
centered between V and GND (Figure 5)  
CC  
IN  
6. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.  
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5
NLAS4783B  
V
CC  
DUT  
Input  
GND  
V
Output  
CC  
V
OUT  
0.1 F  
t
BMM  
50 ꢁ  
35 pF  
90%  
90% of V  
OH  
Output  
Switch Select Pin  
GND  
Figure 2. tBBM (Time Break−Before−Make)  
V
CC  
Input  
50%  
50%  
90%  
DUT  
0 V  
V
Output  
CC  
V
OUT  
V
0.1 F  
OH  
Open  
90%  
50 ꢁ  
35 pF  
Output  
V
OL  
Input  
t
t
OFF  
ON  
Figure 3. tON/tOFF  
V
V
CC  
CC  
Input  
50%  
50%  
DUT  
0 V  
50 ꢁ  
Output  
V
OUT  
V
OH  
Open  
35 pF  
Output  
V
10%  
10%  
OL  
Input  
t
t
ON  
OFF  
Figure 4. tON/tOFF  
http://onsemi.com  
6
NLAS4783B  
50 ꢁ  
DUT  
Reference  
Input  
50 Generator  
Transmitted  
Output  
50 ꢁ  
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is  
the bandwidth of an On switch. V , Bandwidth and V are independent of the input signal direction.  
ISO  
ONL  
V
OUT  
= Off Channel Isolation = 20 Log ǒ Ǔ  
V
V
for V at 100 kHz  
IN  
ISO  
V
IN  
OUT  
V
= On Channel Loss = 20 Log ǒ Ǔ  
for V at 100 kHz to 50 MHz  
ONL  
IN  
V
IN  
Bandwidth (BW) = the frequency 3 dB below V  
ONL  
V
= Use V  
setup and test to all other switch analog input/outputs terminated with 50 ꢁ  
ISO  
CT  
Figure 5. Off Channel Isolation/On Channel Loss (BW)/Crosstalk  
(On Channel to Off Channel)/VONL  
DUT  
V
CC  
V
Open  
Output  
IN  
GND  
C
L
Output  
Off  
V
OUT  
Off  
On  
V
IN  
Figure 6. Charge Injection: (Q)  
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7
NLAS4783B  
1.2  
1.0  
0.8  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
85°C  
25°C  
85°C  
25°C  
−40°C  
−40°C  
0.6  
0.4  
0.2  
0
0
0.0  
0
0.5  
1.0 1.5  
2.0 2.5 3.0 3.5 4.0  
(V)  
4.5  
0.5  
1.0  
1.5  
(V)  
2.0  
2.5  
3.0  
V
V
IN  
IN  
Figure 8. RON vs. VIN vs. Temperature  
@ VCC = 3.0 V  
Figure 7. On−Resistance vs. Input Voltage  
@ VCC = 4.3 V  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0.008  
85°C  
25°C  
0.007  
0.006  
0.005  
0.004  
0.003  
0.002  
−40°C  
0.001  
0
0.0  
0.5  
1.0  
1.5  
2.0  
(V)  
2.5  
3.0  
3.5  
4.0  
10  
100  
1000  
10000  
100000  
V
FREQUENCY (Hz)  
IN  
Figure 9. RON vs. VIN vs. Temperature  
@ VCC = 3.6 V  
Figure 10. Total Harmonic Distortion vs.  
Frequency  
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8
NLAS4783B  
ORDERING INFORMATION  
Device Nomenclature  
Circuit  
Indicator  
Device  
Function  
Package Tape & Reel  
Device Order  
Number  
Suffix  
Suffix  
Technology  
Package Type  
Tape & Reel Size  
NLAS4783BMN1R2G  
NL  
AS  
4783B  
MN1  
R2G  
QFN  
(Pb−Free)  
3000 Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
9
NLAS4783B  
PACKAGE DIMENSIONS  
QFN−16 (3 x 3 x 0.85 mm)  
CASE 485AE−01  
ISSUE O  
D
A
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
B
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.25 AND 0.30 MM FROM TERMINAL.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
5. OUTLINE MEETS JEDEC DIMENSIONS PER  
MO−220, VARIATION VEED−6.  
PIN 1  
LOCATION  
E
MILLIMETERS  
DIM MIN  
0.800 0.900 1.000  
A1 0.000 0.025 0.050  
NOM  
MAX  
A
0.15  
C
TOP VIEW  
A3  
b
D
0.200 REF  
0.180 0.250 0.300  
3.00 BSC  
0.15  
C
D2 1.250  
E
1.40 1.550  
3.00 BSC  
(A3)  
E2 1.250  
e
1.40 1.550  
0.500 BSC  
0.10  
0.08  
C
C
K
L
0.200  
−−−  
−−−  
A
0.300 0.400 0.500  
SEATING  
PLANE  
16 X  
SIDE VIEW  
A1  
C
D2  
e
16X  
L
EXPOSED PAD  
5
8
NOTE 5  
4
9
E2  
K
16X  
12  
1
16  
13  
16X b  
0.10  
0.05  
C
C
A
B
BOTTOM VIEW  
NOTE 3  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
NLAS4783B/D  

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