NLSX5014_18 [ONSEMI]

4-Bit 100 Mb/s Configurable Dual-Supply Level Translator;
NLSX5014_18
型号: NLSX5014_18
厂家: ONSEMI    ONSEMI
描述:

4-Bit 100 Mb/s Configurable Dual-Supply Level Translator

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中文:  中文翻译
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NLSX5014  
4-Bit 100 Mb/s Configurable  
Dual-Supply Level  
Translator  
The NLSX5014 is a 4-bit configurable dual-supply autosensing  
bidirectional level translator that does not require a direction control  
www.onsemi.com  
pin. The I/O V - and I/O V -ports are designed to track two  
CC  
L
different power supply rails, V and V respectively. Both the V  
CC  
L
CC  
MARKING  
DIAGRAMS  
and the V supply rails are configurable from 0.9 V to 4.5 V. This  
L
allows a logic signal on the V side to be translated to either a higher  
L
or a lower logic signal voltage on the V side, and vice-versa.  
UQFN12  
MU SUFFIX  
CASE 523AE  
CC  
AAMG  
The NLSX5014 offers the feature that the values of the V and  
CC  
G
1
V
L
supplies are independent. Design flexibility is maximized  
because V can be set to a value either greater than or less than the  
L
M
G
= Date Code  
= PbFree Package  
V
CC  
supply. In contrast, the majority of competitive auto sense  
translators have a restriction that the value of the V supply must be  
L
(Note: Microdot may be in either location)  
equal to less than (V - 0.4) V.  
CC  
The NLSX5014 has high output current capability, which allows the  
14  
translator to drive high capacitive loads such as most high frequency  
SOIC14  
D SUFFIX  
CASE 751A  
NLSX5014G  
AWLYWW  
14  
EMI filters. Another feature of the NLSX5014 is that each I/O_V and  
Ln  
1
I/O_V  
channel can function as either an input or an output.  
CCn  
1
An Output Enable (EN) input is available to reduce the power  
consumption. The EN pin can be used to disable both I/O ports by  
putting them in 3-state which significantly reduces the supply current  
14  
NLSX  
5014  
ALYWG  
G
TSSOP14  
DT SUFFIX  
CASE 948G  
from both V and V . The EN signal is referenced to the V supply.  
CC  
L
L
14  
1
Features  
1
Wide V , V Operating Range: 0.9 V to 4.5 V  
CC  
L
V and V are independent  
A
=
=
=
=
Assembly Location  
Wafer Lot  
L
CC  
WL, L  
YY, Y  
WW, W  
G or G  
V may be greater than, equal to, or less than V  
L
CC  
Year  
Work Week  
High 100 pF Capacitive Drive Capability  
HighSpeed with 140 Mb/s Guaranteed Date Rate  
= PbFree Package  
(Note: Microdot may be in either location)  
for V , V > 1.8 V  
CC  
L
Low BittoBit Skew  
Overvoltage Tolerant Enable and I/O Pins  
Nonpreferential Powerup Sequencing  
PowerOff Protection  
Small packaging: 1.7 mm x 2.0 mm UQFN12, SOIC14, TSSOP14  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NLSX5014MUTAG  
NLSX5014DR2G  
NLSX5014DTR2G  
UQFN12 3000/Tape & Reel  
(PbFree)  
SO14  
2500/Tape & Reel  
(PbFree)  
Typical Applications  
TSSOP14 2500/Tape & Reel  
(PbFree)  
Mobile Phones, PDAs, Other Portable Devices  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Important Information  
ESD Protection for All Pins:  
HBM (Human Body Model) > 7000 V  
©
Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
April, 2018 Rev. 8  
NLSX5014/D  
NLSX5014  
P
V
L
V
CC  
OneShot  
R1  
+1.8V  
+3.6V  
1k  
N
V
L
V
CC  
OneShot  
NLSX5014  
+1.8 V System  
+3.6 V System  
I/O V  
I/O V  
CC  
L
P
OneShot  
I/O V 1 I/O V  
1
I/O1  
I/O1  
I/On  
L
CC  
I/On  
GND OE  
I/O V n I/O V  
n
R2  
1k  
L
CC  
EN  
GND  
GND  
N
OneShot  
Figure 1. Typical Application Circuit  
Figure 2. Simplified Functional Diagram (1 I/O Line)  
2.5 V  
2.5 V  
3.0 V  
1.8 V  
V
L
V
CC  
V
L
V
CC  
mC  
mC  
Temperature  
Sensor  
Temperature  
Sensor  
NLSX5014  
NLSX5014  
CE  
I/O V 1 I/O V  
1
2
3
CE  
CE  
I/O V 1 I/O V  
1
2
3
CE  
L
CC  
CC  
CC  
L
CC  
CC  
CC  
I/O V 2 I/O V  
I/O V 2 I/O V  
SCK  
SDO  
SCK  
SDI  
SDO  
SCK  
SDO  
SCK  
SDI  
SDO  
L
L
I/O V 3 I/O V  
I/O V 3 I/O V  
L
L
SDI  
I/O V 4 I/O V  
4
SDI  
I/O V 4 I/O V  
4
L
CC  
L
CC  
ANO  
EN  
GND  
ANO  
EN  
GND  
Figure 3. Application Example for VL < VCC  
Figure 4. Application Example for VL > VCC  
www.onsemi.com  
2
NLSX5014  
V
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
EN  
V
L
I/O V 1  
CC  
L
EN  
12  
V
I/O V 2  
I/O V  
I/O V  
1
2
V
L
1
2
3
4
5
11  
10  
9
L
CC  
CC  
I/O V 1  
I/O V  
1
L
CC  
I/O V 3  
CC  
L
I/O V 2  
I/O V  
I/O V  
2
3
L
CC  
I/O V 4  
I/O V  
NC  
3
CC  
L
I/O V 3  
8
L
CC  
NC  
6
7
I/O V  
4
CC  
I/O V 4  
L
I/O V  
4
CC  
8
GND  
GND  
UQFN12  
(Top View)  
TSSOP/SOIC  
(Top View)  
Figure 1. Pin Assignments  
V
L
V
CC  
GND  
EN  
I/O V 1  
I/O V 1  
CC  
L
I/O V 2  
I/O V  
I/O V  
2
3
L
CC  
I/O V 3  
L
CC  
I/O V 4  
I/O V 4  
CC  
L
Figure 2. Logic Diagram  
PIN ASSIGNMENT  
Pins  
FUNCTION TABLE  
Description  
EN  
L
Operating Mode  
HiZ  
V
CC  
L
V
CC  
Input Voltage  
V
V Input Voltage  
L
H
I/O Buses Connected  
GND  
EN  
Ground  
Output Enable  
I/O V  
n
I/O Port, Referenced to V  
CC  
CC  
L
I/O V n  
I/O Port, Referenced to V  
L
www.onsemi.com  
3
NLSX5014  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
0.5 to +5.5  
0.5 to +5.5  
0.5 to +5.5  
0.5 to +5.5  
0.5 to +5.5  
50  
Condition  
Unit  
V
V
Highside DC Supply Voltage  
Lowside DC Supply Voltage  
Referenced DC Input/Output Voltage  
CC  
L
V
V
I/O V  
I/O V  
V
CC  
V
CC  
V Referenced DC Input/Output Voltage  
L
V
L
V
Enable Control Pin DC Input Voltage  
DC Input Diode Current  
V
I
I
I
I
I
I
V < GND  
mA  
mA  
mA  
mA  
mA  
°C  
IK  
I
DC Output Diode Current  
50  
V < GND  
O
OK  
CC  
L
DC Supply Current Through V  
$100  
CC  
DC Supply Current Through V  
$100  
L
DC Ground Current Through Ground Pin  
Storage Temperature  
$100  
GND  
T
STG  
65 to +150  
ESD Rating  
Machine Model  
Human Body Model  
Charged Device Model  
LU Pass  
400  
7000  
2000  
100  
V
V
V
mA  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Highside Positive DC Supply Voltage  
Min  
0.9  
Max  
4.5  
4.5  
4.5  
Unit  
V
V
CC  
V
L
Lowside Positive DC Supply Voltage  
Enable Control Pin Voltage  
0.9  
V
V
I
GND  
V
V
IO  
Bus Input/Output Voltage  
I/O V  
GND  
GND  
4.5  
4.5  
V
CC  
L
I/O V  
T
Operating Temperature Range  
55  
+125  
10  
°C  
A
Dt/DV  
Input Transition Rise or Rate  
0
ns  
V , V from 30% to 70% of V ; V = 3.3 V $ 0.3 V  
I
IO  
CC CC  
Functionaloperation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the  
RecommendedOperating Ranges limits may affect device reliability.  
www.onsemi.com  
4
NLSX5014  
DC ELECTRICAL CHARACTERISTICS  
405C to +855C  
555C to +1255C  
Typ  
Test Conditions  
(Note 1)  
V
(V)  
V (V)  
(Note 3)  
CC  
L
(Note 4)  
(Note 2)  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
I/O V Input HIGH Voltage  
Unit  
V
IHC  
0.9 – 4.5 0.9 – 4.5  
0.9 – 4.5 0.9 – 4.5  
0.9 – 4.5 0.9 – 4.5  
0.9 – 4.5 0.9 – 4.5  
1.2 – 4.5 1.2 – 4.5  
1.2 – 4.5 1.2 – 4.5  
2/3 *  
CC  
2/3 *  
CC  
V
CC  
V
V
V
I/O V Input LOW Voltage  
1/3 *  
2/3 * V  
1/3 *  
V
V
ILC  
IHL  
CC  
V
CC  
V
CC  
V
I/O V Input HIGH Voltage  
2/3 *  
1/3 * V  
L
L
V
L
V
ILL  
I/O V Input LOW Voltage  
1/3 *  
V
L
L
V
L
V
IH  
Control Pin Input HIGH Volt-  
age  
T = +25°C  
2/3 *  
2/3 * V  
V
A
L
V
L
V
IL  
Control Pin Input LOW Volt-  
age  
T = +25°C  
A
1/3 *  
1/3 * V  
V
L
V
L
V
IH  
Control Pin Input HIGH Volt-  
age  
T = +25°C  
A
V
V
< 1.2 V < 1.2  
V
L
V
L
V
CC  
L
V
IL  
Control Pin Input LOW Volt-  
age  
T = +25°C  
A
< 1.2 V < 1.2  
0
0
V
CC  
L
V
OHC  
I/O V Output HIGH Volt-  
I/O V source  
0.9 – 4.5 0.9 – 4.5  
0.9 – 4.5 0.9 – 4.5  
0.9 – 4.5 0.9 – 4.5  
0.9 *  
0.9 *  
V
CC  
CC  
age  
current = 20 mA  
V
CC  
V
CC  
V
I/O V Output LOW Voltage  
I/O V sink  
0.2  
0.2  
V
OLC  
OHL  
CC  
CC  
current = 20 mA  
V
I/O V Output HIGH Voltage  
I/O V source  
0.9 *  
0.9 * V  
V
L
L
L
current = 20 mA  
V
L
V
OLL  
I/O V Output LOW Voltage  
I/O V sink current 0.9 – 4.5 0.9 – 4.5  
0.2  
1
0.2  
2.5  
V
L
L
= 20 mA  
I
V
CC  
Supply Current  
EN = V , I = 0 A, 0.9 – 4.5 0.9 – 4.5  
mA  
QVCC  
L O  
(I/O V = 0 V or  
CC  
V
, I/O V = float)  
CC  
L
or  
(I/O V = float, I/O  
CC  
I
V Supply Current  
L
0.9 – 4.5 0.9 – 4.5  
0.9 – 4.5 0.9 – 4.5  
1
2.5  
1.5  
mA  
mA  
QVL  
V = 0 V or V )  
L
L
I
V
Tristate Output Mode  
T = +25°C,  
0.5  
TSVCC  
CC  
A
Supply Current  
EN = 0 V  
(I/O V = 0 V or  
CC  
V
, I/O V = float)  
CC  
L
I
V Tristate Output Mode  
0.9 – 4.5 0.9 – 4.5  
0.5  
1
1.5  
1.5  
mA  
mA  
or  
TSVL  
L
Supply Current  
(I/O V = float, I/O  
CC  
V = 0 V or V )  
L
L
I
I/O Tristate Output Mode  
Leakage Current  
T = +25°C,  
0.9 – 4.5 0.9 – 4.5  
0.9 – 4.5 0.9 – 4.5  
OZ  
A
EN = 0V  
I
I
Control Pin Input Current  
T = +25°C  
A
1
1
1
1.5  
1.5  
1.5  
mA  
mA  
I
Power Off Leakage Current  
I/O V = 0 to 4.5V,  
0
0
0
OFF  
CC  
I/O V = 0 to 4.5 V 0.9 – 4.5  
1
L
0
0.9 – 4.5  
1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performancemay not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Normal test conditions are V = 0 V, C  
15 pF and C  
15 pF, unless otherwise specified.  
CC  
I
IOVCC  
IOVL  
2. V is the supply voltage associated with the I/O V port, and V ranges from +0.9 V to 4.5 V under normal operating conditions.  
CC  
CC  
3. V is the supply voltage associated with the I/O V port, and V ranges from +0.9 V to 4.5 V under normal operating conditions.  
L
L
L
4. Typical values are for V = +2.8 V, V = +1.8 V and T = +25°C. All units are production tested at T = +25°C. Limits over the operating  
CC  
L
A
A
temperaturerange are guaranteed by design.  
www.onsemi.com  
5
 
NLSX5014  
TIMING CHARACTERISTICS  
555C to +1255C  
Typ  
Test Conditions  
V
(V)  
V (V)  
CC  
L
(Note 8)  
(Note 5)  
(Note 6)  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
(Note 7)  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
Min  
Max  
8.5  
3.5  
8.5  
3.5  
8.5  
3.5  
8.5  
3.5  
Symbol  
Parameter  
I/O V Rise Time  
Unit  
t
C
= 15 pF  
= 15 pF  
= 15 pF  
= 15 pF  
nS  
RVCC  
CC  
IOVCC  
t
I/O V Fall Time  
C
IOVCC  
nS  
nS  
nS  
W
FVCC  
CC  
t
I/O V Rise Time  
C
RVL  
L
IOVL  
t
I/O V Fall Time  
C
FVL  
L
IOVL  
Z
I/O V OneShot  
(Note 9)  
0.9  
1.8  
4.5  
37  
20  
6.0  
OVCC  
CC  
Output Impedance  
Z
OVL  
I/O V OneShot Out-  
(Note 9)  
0.9  
1.8  
4.5  
0.9 – 4.5  
37  
20  
6.0  
W
L
put Impedance  
t
Propagation Delay  
C
C
C
= 15 pF  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
1.0 – 4.5  
1.8 – 4.5  
1.2 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
1.0 – 4.5  
1.8 – 4.5  
1.2 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
1.0 – 4.5  
1.8 – 4.5  
1.2 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
1.0 – 4.5  
1.8 – 4.5  
1.2 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
35  
10  
35  
10  
37  
11  
nS  
PD_VLVCC  
IOVCC  
IOVCC  
IOVCC  
(Driving I/O V  
)
CC  
= 30 pF  
= 50 pF  
= 100 pF  
= 15 pF  
= 30 pF  
= 50 pF  
= 100 pF  
C
IOVCC  
40  
13  
35  
10  
35  
10  
37  
11  
t
Propagation Delay  
C
C
C
nS  
PD_VCCVL  
IOVL  
IOVL  
IOVL  
(Driving I/O V )  
L
C
40  
13  
0.15  
IOVL  
t
SK  
ChanneltoChannel  
Skew  
C
IOVCC  
= 15 pF, C = 15 pF  
IOVL  
nS  
(Note 9)  
I
Input Driver Maximum  
Peak Current  
EN = V ;  
0.9 – 4.5  
0.9 – 4.5  
5.0  
mA  
IN_PEAK  
L
I/O_V = 1 MHz Square Wave,  
CC  
Amplitude = V , or  
CC  
I/O_V = 1 MHz Square Wave,  
L
Amplitude = V (Note 9)  
L
5. Normal test conditions are V = 0 V, C  
15 pF and C  
15 pF, unless otherwise specified.  
CC  
I
IOVCC  
IOVL  
6. V is the supply voltage associated with the I/O V port, and V ranges from +0.9 V to 4.5 V under normal operating conditions.  
CC  
CC  
7. V is the supply voltage associated with the I/O V port, and V ranges from +0.9 V to 4.5 V under normal operating conditions.  
L
L
L
8. Typical values are for V = +2.8 V, V = +1.8 V and T = +25°C. All units are production tested at T = +25°C. Limits over the operating  
CC  
L
A
A
temperaturerange are guaranteed by design.  
9. Guaranteed by design.  
www.onsemi.com  
6
 
NLSX5014  
TIMING CHARACTERISTICS (continued)  
555C to +1255C  
Typ  
Test Conditions  
V
(V)  
V (V)  
(Note 12)  
CC  
L
(Note 13)  
(Note 10)  
(Note 11)  
Min  
Max  
Symbol  
Parameter  
I/O_V Output Enable Time  
Unit  
t
t
C
= 15 pF,  
IOVCC  
0.9 – 4.5  
0.9 – 4.5  
160  
nS  
ENVCC  
CC  
PZH  
I/O_V = V  
L
L
t
C
= 15 pF,  
IOVCC  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
0.9 – 4.5  
130  
160  
130  
210  
175  
210  
175  
PZL  
I/O_V = 0 V  
L
t
I/O_V Output Enable Time  
t
C = 15 pF,  
IOVL  
I/O_V = V  
nS  
nS  
ENVL  
L
PZH  
CC  
CC  
t
C
= 15 pF,  
PZL  
IOVL  
I/O_V = 0 V  
CC  
t
I/O_V Output Disable Time  
t
C = 15 pF,  
IOVCC  
DISVCC  
CC  
PHZ  
I/O_V = V  
L
L
t
C
= 15 pF,  
IOVCC  
PLZ  
PHZ  
I/O_V = 0 V  
L
t
I/O_V Output Disable Time  
t
C = 15 pF,  
IOVL  
I/O_V = V  
nS  
DISVL  
L
CC  
CC  
t
C
= 15 pF,  
PLZ  
IOVL  
I/O_V = 0 V  
CC  
MDR  
Maximum Data Rate  
C
C
C
= 15 pF  
= 30 pF  
= 50 pF  
= 100 pF  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
1.0 – 4.5  
1.8 – 4.5  
1.2 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
0.9 – 4.5  
1.8 – 4.5  
1.0 – 4.5  
1.8 – 4.5  
1.2 – 4.5  
1.8 – 4.5  
50  
140  
40  
mbps  
IO  
IO  
IO  
120  
30  
100  
20  
C
IO  
60  
10.Normal test conditions are V = 0 V, C  
15 pF and C  
15 pF, unless otherwise specified.  
CC  
I
IOVCC  
IOVL  
11. V is the supply voltage associated with the I/O V port, and V ranges from +0.9 V to 4.5 V under normal operating conditions.  
CC  
CC  
12.V is the supply voltage associated with the I/O V port, and V ranges from +0.9 V to 4.5 V under normal operating conditions.  
L
L
L
13.Typical values are for V = +2.8 V, V = +1.8 V and T = +25°C. All units are production tested at T = +25°C. Limits over the operating  
CC  
L
A
A
temperaturerange are guaranteed by design.  
www.onsemi.com  
7
 
NLSX5014  
DYNAMIC POWER CONSUMPTION (T = +25°C)  
A
Symbol  
Parameter  
Test Conditions  
V
CC  
(V)  
V (V)  
L
Typ  
Unit  
(Note 14)  
0.9  
1.5  
1.8  
1.8  
1.8  
2.5  
2.8  
4.5  
0.9  
1.5  
1.8  
1.8  
1.8  
2.5  
2.8  
4.5  
0.9  
1.5  
1.8  
1.8  
1.8  
2.5  
2.8  
4.5  
0.9  
1.5  
1.8  
1.8  
1.8  
2.5  
2.8  
4.5  
(Note 15)  
4.5  
1.8  
1.5  
1.8  
2.8  
2.5  
1.8  
0.9  
4.5  
1.8  
1.5  
1.8  
2.8  
2.5  
1.8  
0.9  
4.5  
1.8  
1.5  
1.8  
2.8  
2.5  
1.8  
0.9  
4.5  
1.8  
1.5  
1.8  
2.8  
2.5  
1.8  
0.9  
(Note 16)  
C
V = Input port,  
CC  
C = 0, f = 1 MHz,  
Load  
39  
20  
17  
14  
13  
14  
13  
19  
37  
30  
29  
29  
29  
30  
29  
19  
29  
29  
29  
29  
29  
30  
29  
35  
21  
18  
18  
14  
13  
14  
13  
30  
pF  
PD_VL  
L
V
= Output Port EN = V (outputs enabled)  
L
V
= Input port,  
C
Load  
= 0, f = 1 MHz,  
pF  
pF  
pF  
CC  
L
V = Output Port EN = V (outputs enabled)  
L
C
V = Input port,  
CC  
C = 0, f = 1 MHz,  
Load  
PD_VCC  
L
V
= Output Port EN = V (outputs enabled)  
L
V
= Input port,  
C
Load  
= 0, f = 1 MHz,  
CC  
L
V = Output Port EN = V (outputs enabled)  
L
14.V  
is the supply voltage associated with the I/O VCC port, and VCC ranges from +0.9 V to 4.5 V under normal operating conditions.  
CC  
15.V is the supply voltage associated with the I/O VL port, and VL ranges from +0.9 V to 4.5 V under normal operating conditions.  
L
16.Typical values are at T = +25°C.  
A
17.C  
and C  
are defined as the value of the IC’s equivalent capacitance from which the operating current can be calculated for the  
PD VL  
PD VCC  
V and V power supplies, respectively. I = I (dynamic) + I (static) I (operating) C x V x f x N  
L
+ I  
where I = I  
CC CC_VCC  
CC  
and N  
CC  
CC  
CC  
CC  
PD  
CC  
IN  
SW  
= total number of outputs switching.  
CC VL  
SW  
www.onsemi.com  
8
 
NLSX5014  
STATIC POWER CONSUMPTION (T = +25°C)  
A
Symbol  
Parameter  
Test Conditions  
V
CC  
(V)  
V (V)  
L
Typ  
Unit  
(Note 18)  
0.9  
1.5  
1.8  
1.8  
1.8  
2.5  
2.8  
4.5  
0.9  
1.5  
1.8  
1.8  
1.8  
2.5  
2.8  
4.5  
0.9  
1.5  
1.8  
1.8  
1.8  
2.5  
2.8  
4.5  
0.9  
1.5  
1.8  
1.8  
1.8  
2.5  
2.8  
4.5  
(Note 19)  
4.5  
1.8  
1.5  
1.8  
2.8  
2.5  
1.8  
0.9  
4.5  
1.8  
1.5  
1.8  
2.8  
2.5  
1.8  
0.9  
4.5  
1.8  
1.5  
1.8  
2.8  
2.5  
1.8  
0.9  
4.5  
1.8  
1.5  
1.8  
2.8  
2.5  
1.8  
0.9  
(Note 20)  
C
V = Input port,  
CC  
C = 0, f = 1 MHz,  
Load  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
pF  
PD_VL  
L
V
= Output Port EN = GND (outputs disabled)  
V
= Input port,  
C
Load  
= 0, f = 1 MHz,  
pF  
pF  
pF  
CC  
L
V = Output Port EN = GND (outputs disabled)  
C
V = Input port,  
CC  
C
Load  
= 0, f = 1 MHz,  
PD_VCC  
L
V
= Output Port EN = GND (outputs disabled)  
V
= Input port,  
C
Load  
= 0, f = 1 MHz,  
CC  
L
V = Output Port EN = GND (outputs disabled)  
18.V  
is the supply voltage associated with the I/O VCC port, and VCC ranges from +0.9 V to 4.5 V under normal operating conditions.  
CC  
19.V is the supply voltage associated with the I/O VL port, and VL ranges from +0.9 V to 4.5 V under normal operating conditions.  
L
20.Typical values are at T = +25°C  
A
www.onsemi.com  
9
 
NLSX5014  
NLSX5014  
NLSX5014  
V
L
V
CC  
V
L
V
CC  
EN  
EN  
I/O V  
I/O V  
L
I/O V  
L
I/O V  
CC  
CC  
Source  
C
IOVL  
C
IOVCC  
Source  
t
v
I/O V  
t
RISE/FALL  
v 3 ns  
RISE/FALL  
I/O V  
CC  
L
3 ns  
90%  
50%  
10%  
90%  
50%  
10%  
t
t
t
t
PD_VCCVL  
PD_VCCVL  
PD_VLVCC  
PD_VLVCC  
I/O V  
I/O V  
CC  
L
90%  
50%  
10%  
90%  
50%  
10%  
t
t
RVCC  
t
t
RVL  
FVCC  
FVL  
Figure 3. Driving I/O VL Test Circuit and Timing  
Figure 4. Driving I/O VCC Test Circuit and Timing  
V
CC  
2xV  
CC  
OPEN  
R
1
PULSE  
GENERATOR  
DUT  
R
T
C
L
R
L
Test  
Switch  
t
t
, t  
Open  
PZH PHZ  
, t  
2 x V  
CC  
PZL PLZ  
C = 15 pF or equivalent (Includes jig and probe capacitance)  
L
R = R = 50 kW or equivalent  
L
T
1
OUT  
R = Z  
of pulse generator (typically 50 W)  
Figure 5. Test Circuit for Enable/Disable Time Measurement  
t
t
F
V
R
L
50%  
EN  
V
CC  
90%  
50%  
Input  
GND  
10%  
GND  
t
t
PLZ  
PZL  
t
t
PHL  
PLH  
HIGH  
IMPEDANCE  
90%  
50%  
10%  
50%  
Output  
Output  
10%  
90%  
V
OL  
t
t
PHZ  
PZH  
t
R
t
F
V
OH  
50%  
Output  
HIGH  
IMPEDANCE  
Figure 6. Timing Definitions for Propagation Delays and Enable/Disable Measurement  
www.onsemi.com  
10  
NLSX5014  
IMPORTANT APPLICATIONS INFORMATION  
Level Translator Architecture  
V pins to a high impedance state. Normal translation  
L
The NLSX5014 autosense translator provides  
bidirectional logic voltage level shifting to transfer data  
in multiple supply voltage systems. These level translators  
operation occurs when the EN pin is equal to a logic high  
signal. The EN pin is referenced to the V supply and has  
L
OverVoltage Tolerant (OVT) protection.  
have two supply voltages, V and V , which set the logic  
L
CC  
UniDirectional versus BiDirectional Translation  
levels on the input and output sides of the translator. When  
used to transfer data from the I/O V to the I/O V ports,  
The NLSX5014 translator can function as  
a
L
CC  
noninverting unidirectional translator. One advantage of  
using the translator as a unidirectional device is that each  
I/O pin can be configured as either an input or output. The  
configurable input or output feature is especially useful in  
applications such as SPI that use multiple unidirectional  
I/O lines to send data to and from a device. The flexible I/O  
port of the auto sense translator simplifies the trace  
connections on the PCB.  
input signals referenced to the V supply are translated to  
L
output signals with a logic level matched to V . In a  
CC  
similar manner, the I/O V to I/O V translation shifts  
CC  
L
input signals with a logic level compatible to V to an  
CC  
output signal matched to V .  
L
The NLSX5014 translator consists of bidirectional  
channels that independently determine the direction of the  
data flow without requiring a directional pin. Oneshot  
circuits are used to detect the rising or falling input signals.  
In addition, the oneshots decrease the rise and fall times  
of the output signal for hightolow and lowtohigh  
transitions.  
Power Supply Guidelines  
The values of the V and V supplies can be set to  
L
CC  
anywhere between 0.9 and 4.5 V. Design flexibility is  
maximized because V may be either greater than or less  
L
than the V supply. In contrast, the majority of the  
competitive auto sense translators has a restriction that the  
CC  
Input Driver Requirements  
Autosense translators such as the NLSX5014 have a  
wide bandwidth, but a relatively small DC output current  
rating. The high bandwidth of the bidirectional I/O circuit  
is used to quickly transform from an input to an output  
driver and vice versa. The I/O ports have a modest DC  
current output specification so that the output driver can be  
over driven when data is sent in the opposite direction. For  
proper operation, the input driver to the autosense  
translator should be capable of driving 2 mA of peak output  
current. The bidirectional configuration of the translator  
results in both input stages being active for a very short time  
period. Although the peak current from the input signal  
circuit is relatively large, the average current is small and  
consistent with a standard CMOS input stage.  
value of the V supply must be equal to less than (V  
L
CC  
0.4) V.  
The sequencing of the power supplies will not damage  
the device during powerup operation. In addition, the I/O  
V
CC  
and I/O V pins are in the high impedance state if  
L
either supply voltage is equal to 0 V. For optimal  
performance, 0.01 to 0.1 mF decoupling capacitors should  
be used on the V and V power supply pins. Ceramic  
L
CC  
capacitors are a good design choice to filter and bypass any  
noise signals on the voltage lines to the ground plane of the  
PCB. The noise immunity will be maximized by placing  
the capacitors as close as possible to the supply and ground  
pins, along with minimizing the PCB connection traces.  
The NLSX5014 translators have a power down feature  
that provides design flexibility. The output ports are  
Enable Input (EN)  
The NLSX5014 translator has an Enable pin (EN) that  
provides tristate operation at the I/O pins. Driving the  
Enable pin to a low logic level minimizes the power  
disabled when either power supply is off (V or V = 0 V).  
This feature causes all of the I/O pins to be in the power  
saving high impedance state.  
L
CC  
consumption of the device and drives the I/O V and I/O  
CC  
www.onsemi.com  
11  
NLSX5014  
PACKAGE DIMENSIONS  
UQFN12 1.7x2.0, 0.4P  
CASE 523AE  
ISSUE A  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
D
A B  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. DIMENSION b APPLIES TO PLATED TERMINAL  
AND IS MEASURED BETWEEN 0.15 AND 0.30 MM  
FROM TERMINAL TIP.  
L1  
PIN 1 REFERENCE  
4. MOLD FLASH ALLOWED ON TERMINALS  
ALONG EDGE OF PACKAGE. FLASH 0.03  
MAX ON BOTTOM SURFACE OF  
TERMINALS.  
5. DETAIL A SHOWS OPTIONAL  
CONSTRUCTION FOR TERMINALS.  
DETAIL A  
E
NOTE 5  
0.10  
0.10  
C
C
2X  
2X  
MILLIMETERS  
TOP VIEW  
DIM MIN  
MAX  
0.55  
0.05  
A
A1  
A3  
b
0.45  
0.00  
0.127 REF  
DETAIL B  
A
0.15  
0.25  
0.05  
0.05  
C
DETAIL B  
OPTIONAL  
CONSTRUCTION  
D
1.70 BSC  
2.00 BSC  
0.40 BSC  
E
e
12X  
C
K
0.20  
----  
0.55  
0.03  
A1  
SEATING  
PLANE  
C
L
0.45  
0.00  
0.15 REF  
A3  
SIDE VIEW  
L1  
L2  
8X  
K
5
1
7
DETAIL A  
12X L  
e
MOUNTING FOOTPRINT  
SOLDERMASK DEFINED  
2.00  
11  
12X  
b
0.10  
1
L2  
M
M
C A B  
C
BOTTOM VIEW  
0.05  
NOTE 3  
0.40  
0.32  
PITCH  
2.30  
11X  
0.22  
12X  
0.69  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
MountingTechniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
12  
NLSX5014  
PACKAGE DIMENSIONS  
SOIC14  
D SUFFIX  
CASE 751A03  
ISSUE L  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C A  
DETAIL A  
h
A
X 45  
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
0.10  
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
SOLDERING FOOTPRINT*  
6.50  
14X  
1.18  
1
1.27  
PITCH  
14X  
0.58  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
MountingTechniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
13  
NLSX5014  
PACKAGE DIMENSIONS  
TSSOP14  
DT SUFFIX  
CASE 948G  
ISSUE C  
NOTES:  
14X K REF  
1. DIMENSIONING AND TOLERANCING PER  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
S
0.15 (0.006) T U  
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
L
N
U−  
PIN 1  
IDENT.  
F
7
1
DETAIL E  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
S
K
0.15 (0.006) T U  
A
V−  
K1  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
A
B
C
D
F
G
H
J
4.90  
4.30  
−−−  
0.05  
0.50  
0.65 BSC  
0.50  
0.09  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION NN  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
W−  
C
J1 0.09  
0.19  
K
0.10 (0.004)  
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
SEATING  
PLANE  
T−  
H
G
DETAIL E  
D
0
8
0
8
_
_
_
_
SOLDERING FOOTPRINT  
7.06  
1
0.65  
PITCH  
01.34X6  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
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NLSX5014/D  

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ONSEMI

NLSXN5004MU2TAG

4-Bit 100 Mb/s Configurable Dual-Supply Level Translator
ONSEMI

NLT02-15-RA

Telecomm/Datacomm
ETC

NLT02-40-PA

Telecomm/Datacomm
ETC

NLT02-40-RA

Telecomm/Datacomm
ETC

NLT06-15-NA

Telecomm/Datacomm
ETC

NLT06-15-PA

Telecomm/Datacomm
ETC

NLT06-15-RA

Telecomm/Datacomm
ETC