NLV14011UBDG [ONSEMI]

UB-Suffix Series CMOS Gates;
NLV14011UBDG
型号: NLV14011UBDG
厂家: ONSEMI    ONSEMI
描述:

UB-Suffix Series CMOS Gates

栅 光电二极管 逻辑集成电路 触发器
文件: 总6页 (文件大小:144K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC14001UB, MC14011UB  
UB-Suffix Series  
CMOS Gates  
The UB Series logic gates are constructed with P and N channel  
enhancement mode devices in a single monolithic structure  
(Complementary MOS). Their primary use is where low power  
dissipation and/or high noise immunity is desired. The UB set of  
CMOS gates are inverting non−buffered functions.  
http://onsemi.com  
Features  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
Linear and Oscillator Applications  
SOIC−14  
D SUFFIX  
CASE 751A  
Capable of Driving Two Low−Power TTL Loads or One  
Low−Power Schottky TTL Load Over the Rated Temperature Range  
Double Diode Protection on All Inputs  
MARKING DIAGRAM  
Pin−for−Pin Replacements for Corresponding CD4000 Series UB  
14  
Suffix Devices  
140xxUG  
AWLYWW  
NLV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
1
This Device is Pb−Free and is RoHS Compliant  
xx  
A
WL, L  
YY, Y  
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
= Year  
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
Symbol  
Parameter  
Value  
0.5 to +18.0  
Unit  
V
WW, W = Work Week  
= Pb−Free Package  
V
DD  
DC Supply Voltage Range  
G
V , V  
in out  
Input or Output Voltage Range  
(DC or Transient)  
0.5 to V + 0.5  
V
DD  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
I , I  
in out  
Input or Output Current  
(DC or Transient) per Pin  
10  
mA  
P
D
Power Dissipation, per Package  
(Note 1)  
500  
mW  
T
Ambient Temperature Range  
Storage Temperature Range  
55 to +125  
65 to +150  
260  
°C  
°C  
°C  
A
T
stg  
T
Lead Temperature  
L
(8−Second Soldering)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Temperature Derating: “D/DW” Package: –7.0 mW/_C From 65_C To 125_C  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
high−impedance circuit. For proper operation, V and V should be constrained  
in  
out  
to the range V (V or V ) V .  
SS  
in  
out  
DD  
Unused inputs must always be tied to an appropriate logic voltage level  
(e.g., either V or V ). Unused outputs must be left open.  
SS  
DD  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
July, 2014 − Rev. 10  
MC14001UB/D  
 
MC14001UB, MC14011UB  
LOGIC DIAGRAMS  
MC14001UB  
Quad 2−Input  
NOR Gate  
MC14011UB  
Quad 2−Input  
NAND Gate  
1
1
2
3
3
2
5
5
4
4
6
6
8
8
10  
11  
10  
11  
9
9
12  
12  
13  
13  
V
= PIN 14  
= PIN 7  
FOR ALL DEVICES  
DD  
V
SS  
PIN ASSIGNMENTS  
MC14001UB  
MC14011UB  
Quad 2−Input NOR Gate  
Quad 2−Input NAND Gate  
IN 1  
IN 2  
1
2
3
4
5
6
14  
V
IN 1  
IN 2  
1
2
3
4
5
6
14  
V
DD  
A
DD  
A
13 IN 2  
12 IN 1  
13 IN 2  
12 IN 1  
A
D
A
D
D
OUT  
OUT  
A
A
D
OUT  
IN 1  
IN 2  
11 OUT  
10 OUT  
OUT  
IN 1  
IN 2  
11 OUT  
10 OUT  
B
D
C
B
D
C
B
B
B
B
9
8
IN 2  
IN 1  
9
8
IN 2  
IN 1  
C
C
V
SS  
7
V
SS  
7
C
C
http://onsemi.com  
2
MC14001UB, MC14011UB  
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V  
)
SS  
− 55_C  
25_C  
125_C  
Typ  
V
DD  
(Note 2)  
Vdc  
Min  
Max  
Min  
Max  
Min  
Max  
Characteristic  
Output Voltage  
Symbol  
Unit  
“0” Level  
“1” Level  
“0” Level  
V
OL  
5.0  
10  
15  
0.05  
0.05  
0.05  
0
0
0
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
Vdc  
V
in  
= V or 0  
DD  
V
in  
= 0 or V  
V
OH  
5.0  
10  
15  
4.95  
9.95  
14.95  
4.95  
9.95  
14.95  
5.0  
10  
15  
4.95  
9.95  
14.95  
Vdc  
Vdc  
DD  
Input Voltage  
(V = 4.5 Vdc)  
V
IL  
5.0  
10  
15  
1.0  
2.0  
2.5  
2.25  
4.50  
6.75  
1.0  
2.0  
2.5  
1.0  
2.0  
2.5  
O
(V = 9.0 Vdc)  
O
(V = 13.5 Vdc)  
O
(V = 0.5 Vdc)  
“1” Level  
Source  
Sink  
V
5.0  
10  
15  
4.0  
8.0  
12.5  
4.0  
8.0  
12.5  
2.75  
5.50  
8.25  
4.0  
8.0  
12.5  
Vdc  
O
IH  
(V = 1.0 Vdc)  
O
(V = 1.5 Vdc)  
O
Output Drive Current  
I
mAdc  
OH  
(V = 2.5 Vdc)  
5.0  
5.0  
10  
–1.0  
–0.25  
–0.62  
–1.8  
–0.75  
–0.2  
–0.4  
–1.5  
–1.7  
–0.36  
–0.9  
–0.55  
–0.14  
–0.15  
–1.0  
OH  
(V = 4.6 Vdc)  
OH  
(V = 9.5 Vdc)  
OH  
(V = 13.5 Vdc)  
OH  
15  
–3.5  
(V = 0.4 Vdc)  
I
OL  
5.0  
10  
15  
0.64  
1.6  
4.2  
0.51  
1.1  
3.4  
0.88  
2.25  
8.8  
0.36  
0.7  
2.4  
mAdc  
OL  
(V = 0.5 Vdc)  
OL  
(V = 1.5 Vdc)  
OL  
Input Current  
Input Capacitance  
I
15  
0.1  
0.00001  
5.0  
0.1  
7.5  
1.0  
mAdc  
in  
C
pF  
in  
(V = 0)  
in  
Quiescent Current  
(Per Package)  
I
5.0  
10  
15  
0.25  
0.5  
1.0  
0.0005  
0.0010  
0.0015  
0.25  
0.5  
1.0  
7.5  
15  
30  
mAdc  
mAdc  
DD  
Total Supply Current (Notes 3, 4)  
(Dynamic plus Quiescent,  
I
T
5.0  
10  
15  
I = (0.3 mA/kHz) f + I /N  
T DD  
I = (0.6 mA/kHz) f + I /N  
T
DD  
Per Gate C = 50 pF)  
I = (0.8 mA/kHz) f + I /N  
T
L
DD  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.  
3. The formulas given are for the typical characteristics only at 25_C.  
4. To calculate total supply current at loads other than 50 pF:  
I (C ) = I (50 pF) + (C − 50) Vfk  
T
L
T
L
where: I is in mH (per package), C in pF, V = (V − V ) in volts, f in kHz is input frequency, and k = 0.001 x the number of exercised gates  
T
L
DD  
SS  
per package.  
SWITCHING CHARACTERISTICS (Note 5) (C = 50 pF, T = 25_C)  
L
A
Characteristic  
Symbol  
V
DD  
Min  
Typ  
Max  
Unit  
Vdc  
(Note 6)  
Output Rise Time  
t
ns  
TLH  
THL  
t
t
t
= (3.0 ns/pF) C + 30 ns  
= (1.5 ns/pF) C + 15 ns  
= (1.1 ns/pF) C + 10 ns  
5.0  
10  
15  
180  
90  
65  
360  
180  
130  
TLH  
TLH  
TLH  
L
L
L
Output Fall Time  
t
ns  
ns  
t
t
t
= (1.5 ns/pF) C + 25 ns  
= (0.75 ns/pF) C + 12.5 ns  
= (0.55 ns/pF) C + 9.5 ns  
5.0  
10  
15  
100  
50  
40  
200  
100  
80  
THL  
THL  
THL  
L
L
L
Propagation Delay Time  
t
, t  
PLH PHL  
t
t
t
, t  
= (1.7 ns/pF) C + 30 ns  
= (0.66 ns/pF) C + 22 ns  
L
= (0.50 ns/pF) C + 15 ns  
L
5.0  
10  
15  
90  
50  
40  
180  
100  
80  
PLH PHL  
L
, t  
PLH PHL  
, t  
PLH PHL  
5. The formulas given are for the typical characteristics only at 25_C.  
6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.  
http://onsemi.com  
3
 
MC14001UB, MC14011UB  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC14001UBDG  
SOIC−14  
(Pb−Free)  
55 Units / Rail  
55 Units / Rail  
NLV14001UBDG*  
MC14001UBDR2G  
NLV14001UBDR2G*  
SOIC−14  
(Pb−Free)  
SOIC−14  
(Pb−Free)  
2500 / Tape & Reel  
2500 / Tape & Reel  
SOIC−14  
(Pb−Free)  
MC14011UBDG  
SOIC−14  
(Pb−Free)  
55 Units / Rail  
55 Units / Rail  
NLV14011UBDG*  
MC14011UBDR2G  
NLV14011UBDR2G*  
SOIC−14  
(Pb−Free)  
SOIC−14  
(Pb−Free)  
2500 / Tape & Reel  
2500 / Tape & Reel  
SOIC−14  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP  
Capable.  
20 ns  
20 ns  
V
DD  
V
INPUT  
DD  
14  
90%  
50%  
10%  
INPUT  
*
OUTPUT  
PULSE  
GENERATOR  
0 V  
V
t
t
PLH  
PHL  
C
OH  
L
90%  
50%  
10%  
OUTPUT  
INVERTING  
V
OL  
7
V
SS  
*All unused inputs of AND, NAND gates must be  
t
t
TLH  
THL  
connected to V  
.
DD  
All unused inputs of OR, NOR gates must be  
connected to V  
.
SS  
Figure 1. Switching Time Test Circuit and Waveforms  
http://onsemi.com  
4
MC14001UB, MC14011UB  
MC14001UB CIRCUIT SCHEMATIC  
MC14011UB CIRCUIT SCHEMATIC  
(1/4 of Device Shown)  
V
DD  
3
14 10  
14 V  
DD  
1
2
8
9
3, 4, 10, 11  
1, 6, 8, 13  
2, 5, 9, 12  
6
5
13  
12  
7 V  
SS  
4
7
11  
V
SS  
16  
14  
12  
10  
8.0  
6.0  
4.0  
2.0  
0
16  
14  
V
= 15 Vdc  
V
= 15 Vdc  
DD  
T = +ꢀ25°C  
DD  
Unused input  
connected to  
A
Unused input  
b
a
connected to  
.
V
SS  
.
12  
V
SS  
a
One input only  
Both inputs  
10 Vdc  
10 Vdc  
a T = +ꢀ125°C  
A
10  
b
b T = -ꢀ55°C  
A
8.0  
6.0  
4.0  
8.0  
6.0  
b
a
a
b
5.0 Vdc  
5.0 Vdc  
15 Vdc  
10 Vdc  
a
b
4.0  
2.0  
0
a
b
a
b
2.0  
0
0
2.0 4.0 6.0 8.0 10 12 14 16  
0
2.0 4.0 6.0 8.0 10 12 14 16  
V , INPUT VOLTAGE (Vdc)  
in  
V , INPUT VOLTAGE (Vdc)  
in  
Figure 2. Typical Voltage and  
Current Transfer Characteristics  
Figure 3. Typical Voltage Transfer  
Characteristics versus Temperature  
10  
8.0  
6.0  
4.0  
2.0  
0
0
-ꢀ2.0  
-ꢀ4.0  
-ꢀ6.0  
-ꢀ8.0  
-ꢀ10  
c
a
15 Vdc  
b
a
c
V
= -ꢀ5.0 Vdc  
GS  
b
V
= 10 Vdc  
GS  
a
b
a T = -ꢀ55°C  
b T = +ꢀ25°C  
T = +ꢀ125°C  
A
c
A
c
A
a T = -ꢀ55°C  
b T = +ꢀ25°C  
c
A
c
A
T = +ꢀ125°C  
A
b
-ꢀ10 Vdc  
a
c
c
-ꢀ15 Vdc  
b
b
5.0 Vdc  
a
a
-ꢀ10  
-ꢀ8.0  
-ꢀ6.0  
-ꢀ4.0  
-ꢀ2.0  
0
0
2.0  
4.0  
, DRAIN VOLTAGE (Vdc)  
DS  
6.0  
8.0  
10  
V
DS  
, DRAIN VOLTAGE (Vdc)  
V
Figure 4. Typical Output Source Characteristics  
Figure 5. Typical Output Sink Characteristics  
http://onsemi.com  
5
MC14001UB, MC14011UB  
PACKAGE DIMENSIONS  
SOIC−14 NB  
CASE 751A−03  
ISSUE K  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C A  
DETAIL A  
h
A
X 45  
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
SOLDERING FOOTPRINT*  
6.50  
14X  
1.18  
1
1.27  
PITCH  
14X  
0.58  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and the  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed  
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation  
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets  
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,  
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which  
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or  
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable  
copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
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Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MC14001UB/D  

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