NLV74HC125ADTR2G [ONSEMI]

Quad 3-State Noninverting Buffers;
NLV74HC125ADTR2G
型号: NLV74HC125ADTR2G
厂家: ONSEMI    ONSEMI
描述:

Quad 3-State Noninverting Buffers

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MC74HC125A,  
MC74HC126A  
Quad 3-State Noninverting  
Buffers  
High−Performance Silicon−Gate CMOS  
http://onsemi.com  
The MC74HC125A and MC74HC126A are identical in pinout to  
the LS125 and LS126. The device inputs are compatible with standard  
CMOS outputs; with pullup resistors, they are compatible with  
LSTTL outputs.  
The HC125A and HC126A noninverting buffers are designed to be  
used with 3−state memory address drivers, clock drivers, and other  
bus−oriented systems. The devices have four separate output enables  
that are active−low (HC125A) or active−high (HC126A).  
SOIC−14 NB  
D SUFFIX  
CASE 751A  
TSSOP−14  
DT SUFFIX  
CASE 948G  
PIN ASSIGNMENT  
Features  
OE1  
A1  
1
2
14  
13 OE4  
12  
V
CC  
Output Drive Capability: 15 LSTTL Loads  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2.0 to 6.0 V  
Y1  
3
4
A4  
OE2  
11 Y4  
Low Input Current: 1.0 mA  
A2  
Y2  
5
6
10 OE3  
High Noise Immunity Characteristic of CMOS Devices  
In Compliance with the JEDEC Standard No. 7 A Requirements  
Chip Complexity: 72 FETs or 18 Equivalent Gates  
9
8
A3  
Y3  
GND  
7
NLV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
MARKING DIAGRAMS  
14  
14  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
HC  
12xA  
ALYWG  
G
HC12xAG  
AWLYWW  
Compliant  
LOGIC DIAGRAM  
1
1
HC125A  
HC126A  
SOIC−14 NB  
TSSOP−14  
Active−Low Output Enables  
Active−High Output Enables  
x
= 5, 6  
A
L, WL  
Y, YY  
= Assembly Location  
= Wafer Lot  
= Year  
2
3
2
3
A1  
A1  
Y1  
Y2  
Y3  
Y1  
Y2  
Y3  
1
5
1
5
W, WW = Work Week  
OE1  
A2  
OE1  
A2  
G or G  
= Pb−Free Package  
6
6
(Note: Microdot may be in either location)  
4
9
4
9
OE2  
A3  
OE2  
A3  
FUNCTION TABLE  
HC125A  
HC126A  
8
8
Inputs Output  
Inputs Output  
A
OE  
Y
A
OE  
Y
10  
12  
10  
12  
OE3  
A4  
OE3  
A4  
H
L
X
L
L
H
H
L
Z
H
L
X
H
H
L
H
L
Z
11  
11  
Y4  
Y4  
13  
13  
OE4  
OE4  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
PIN 14 = V  
CC  
PIN 7 = GND  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
August, 2014 − Rev. 15  
MC74HC125A/D  
MC74HC125A, MC74HC126A  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high−impedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
–0.5 to +7.0  
CC  
V
–0.5 to V + 0.5  
V
in  
out  
CC  
V
–0.5 to V + 0.5  
V
CC  
I
20  
35  
75  
mA  
mA  
mA  
mW  
in  
I
DC Output Current, per Pin  
out  
CC  
cuit. For proper operation, V and  
in  
V
out  
should be constrained to the  
I
DC Supply Current, V and GND Pins  
CC  
range GND v (V or V ) v V  
.
in  
out  
CC  
P
D
Power Dissipation in Still Air  
SOIC Package†  
TSSOP Package†  
500  
450  
Unused inputs must always be  
tied to an appropriate logic voltage  
level (e.g., either GND or V ).  
Unused outputs must be left open.  
T
Storage Temperature  
–65 to +150  
_C  
_C  
CC  
stg  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
(SOIC or TSSOP Package)  
L
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of  
these limits are exceeded, device functionality should not be assumed, damage may occur and  
reliability may be affected.  
†Derating: SOIC Package: –7 mW/_C from 65_ to 125_C  
TSSOP Package: –6.1 mW/_C from 65_ to 125_C  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
DC Supply Voltage (Referenced to GND)  
Min  
2.0  
0
Max  
Unit  
V
V
CC  
6.0  
V , V  
in out  
DC Input Voltage, Output Voltage  
(Referenced to GND)  
V
CC  
V
T
Operating Temperature, All Package Types  
–55  
+125  
_C  
A
t , t  
r
Input Rise and Fall Time  
(Figure 1)  
V
CC  
V
CC  
V
CC  
= 2.0 V  
= 4.5 V  
= 6.0 V  
0
0
0
1000  
500  
400  
ns  
f
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
http://onsemi.com  
2
MC74HC125A, MC74HC126A  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
V
CC  
–55 to  
V
25_C  
Symbol  
Parameter  
Test Conditions  
= V – 0.1 V  
|I | v 20 mA  
v 85_C v 125_C  
Unit  
V
IH  
Minimum High−Level Input Voltage  
V
2.0  
3.0  
4.5  
6.0  
1.5  
2.1  
1.5  
2.1  
1.5  
2.1  
V
out  
CC  
out  
3.15  
4.2  
3.15  
4.2  
3.15  
4.2  
V
Maximum Low−Level Input Voltage  
V
= 0.1 V  
2.0  
3.0  
4.5  
6.0  
0.5  
0.9  
1.35  
1.8  
0.5  
0.9  
1.35  
1.8  
0.5  
0.9  
1.35  
1.8  
V
V
IL  
out  
|I | v 20 mA  
out  
V
OH  
Minimum High−Level Output  
Voltage  
V
in  
= V  
IH  
2.0  
4.5  
6.0  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
|I | v 20 mA  
out  
V
= V  
|I | v 3.6 mA  
3.0  
4.5  
6.0  
2.48  
3.98  
5.48  
2.34  
3.84  
5.34  
2.2  
3.7  
5.2  
in  
IH  
IL  
out  
|I | v 6.0 mA  
out  
|I | v 7.8 mA  
out  
V
OL  
Maximum Low−Level Output  
Voltage  
V
in  
= V  
2.0  
4.5  
6.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
|I | v 20 mA  
out  
V
= V  
|I | v 3.6 mA  
3.0  
4.5  
6.0  
0.26  
0.26  
0.26  
0.33  
0.33  
0.33  
0.4  
0.4  
0.4  
in  
IL  
out  
|I | v 6.0 mA  
out  
|I | v 7.8 mA  
out  
I
Maximum Input Leakage Current  
V
in  
= V or GND  
6.0  
6.0  
0.1  
0.5  
1.0  
5.0  
1.0  
10  
mA  
mA  
in  
CC  
I
Maximum Three−State Leakage  
Current  
Output in High−Impedance State  
= V or V  
OZ  
V
in  
IL  
IH  
V
out  
= V or GND  
CC  
I
Maximum Quiescent Supply Current  
(per Package)  
V
= V or GND  
= 0 mA  
6.0  
4.0  
40  
160  
mA  
CC  
in  
CC  
I
out  
AC ELECTRICAL CHARACTERISTICS (C = 50 pF, Input t = t = 6.0 ns)  
L
r
f
Guaranteed Limit  
–55 to  
V
CC  
25_C  
v 85_C  
v 125_C  
V
Symbol  
Parameter  
Unit  
t
t
t
,
Maximum Propagation Delay, Input A to Output Y  
(Figures 1 and 3)  
2.0  
3.0  
4.5  
6.0  
90  
36  
18  
15  
115  
45  
135  
60  
ns  
PLH  
t
PHL  
23  
20  
27  
23  
,
Maximum Propagation Delay, Output Enable to Y  
(Figures 2 and 4)  
2.0  
3.0  
4.5  
6.0  
120  
45  
24  
150  
60  
30  
180  
80  
36  
ns  
ns  
ns  
PLZ  
t
PHZ  
20  
26  
31  
,
Maximum Propagation Delay, Output Enable to Y  
(Figures 2 and 4)  
2.0  
3.0  
4.5  
6.0  
90  
36  
18  
15  
115  
45  
23  
135  
60  
27  
PZL  
t
PZH  
20  
23  
t
,
Maximum Output Transition Time, Any Output  
(Figures 1 and 3)  
2.0  
3.0  
4.5  
6.0  
60  
22  
12  
10  
75  
28  
15  
13  
90  
34  
18  
15  
TLH  
t
THL  
C
Maximum Input Capacitance  
10  
15  
10  
15  
10  
15  
pF  
pF  
in  
C
Maximum 3−State Output Capacitance (Output in High−Impedance State)  
out  
Typical @ 25°C, V = 5.0 V  
CC  
30  
C
Power Dissipation Capacitance (Per Buffer)*  
pF  
PD  
2
* Used to determine the no−load dynamic power consumption: P = C  
V
f + I  
V
.
D
PD CC  
CC CC  
http://onsemi.com  
3
MC74HC125A, MC74HC126A  
SWITCHING WAVEFORMS  
V
CC  
OE (HC125A)  
OE (HC126A)  
50%  
50%  
t
t
f
r
GND  
V
CC  
90%  
50%  
10%  
V
CC  
INPUT A  
GND  
GND  
t
PHL  
t
PLH  
t
t
PZL  
PLZ  
90%  
50%  
10%  
OUTPUT Y  
HIGH  
IMPEDANCE  
50%  
OUTPUT Y  
OUTPUT Y  
10%  
90%  
V
OL  
t
t
THL  
TLH  
t
t
PZH  
PHZ  
V
OH  
50%  
HIGH  
Figure 1.  
IMPEDANCE  
Figure 2.  
TEST POINT  
TEST POINT  
OUTPUT  
CONNECT TO V WHEN  
CC  
1 kW  
TESTING t AND t  
PLZ  
OUTPUT  
PZL.  
CONNECT TO GND WHEN  
TESTING t and t  
DEVICE  
UNDER  
TEST  
DEVICE  
UNDER  
TEST  
PHZ  
PZH.  
C *  
L
C *  
L
*Includes all probe and jig capacitance  
*Includes all probe and jig capacitance  
Figure 3. Test Circuit  
Figure 4. Test Circuit  
V
CC  
OE  
A
Y
HC125A  
(1/4 OF THE DEVICE)  
V
CC  
OE  
A
Y
HC126A  
(1/4 OF THE DEVICE)  
http://onsemi.com  
4
MC74HC125A, MC74HC126A  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74HC125ADG  
SOIC−14 NB  
(Pb−Free)  
55 Units / Rail  
2500 / Tape & Reel  
96 Units / Rail  
MC74HC125ADR2G  
MC74HC125ADTG  
SOIC−14 NB  
(Pb−Free)  
TSSOP−14  
(Pb−Free)  
MC74HC125ADTR2G  
MC74HC126ADG  
TSSOP−14  
(Pb−Free)  
2500 / Tape & Reel  
55 Units / Rail  
SOIC−14 NB  
(Pb−Free)  
MC74HC126ADR2G  
MC74HC126ADTR2G  
NLV74HC125ADG*  
NLV74HC125ADR2G*  
NLV74HC125ADTG*  
NLV74HC125ADTR2G*  
NLV74HC126ADR2G*  
NLV74HC126ADTR2G*  
SOIC−14 NB  
(Pb−Free)  
2500 / Tape & Reel  
2500 / Tape & Reel  
55 Units / Rail  
TSSOP−14  
(Pb−Free)  
SOIC−14 NB  
(Pb−Free)  
SOIC−14 NB  
(Pb−Free)  
2500 / Tape & Reel  
55 Units / Rail  
TSSOP−14  
(Pb−Free)  
TSSOP−14  
(Pb−Free)  
2500 / Tape & Reel  
2500 / Tape & Reel  
2500 / Tape & Reel  
SOIC−14 NB  
(Pb−Free)  
TSSOP−14  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP  
Capable  
http://onsemi.com  
5
MC74HC125A, MC74HC126A  
PACKAGE DIMENSIONS  
TSSOP−14  
CASE 948G  
ISSUE B  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
14X K REF  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
S
0.15 (0.006) T U  
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
L
N
−U−  
PIN 1  
IDENT.  
F
7
1
DETAIL E  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE −W−.  
S
K
0.15 (0.006) T U  
A
K1  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
−V−  
A
B
C
D
F
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION N−N  
G
H
J
J1  
K
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
−W−  
C
K1 0.19  
0.10 (0.004)  
L
M
6.40 BSC  
0.252 BSC  
SEATING  
−T−  
H
G
0
8
0
8
DETAIL E  
_
_
_
_
D
PLANE  
SOLDERING FOOTPRINT*  
7.06  
1
0.65  
PITCH  
14X  
0.36  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
6
MC74HC125A, MC74HC126A  
PACKAGE DIMENSIONS  
SOIC−14 NB  
CASE 751A−03  
ISSUE K  
NOTES:  
D
A
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
B
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C A  
DETAIL A  
h
A
X 45  
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
SOLDERING FOOTPRINT*  
6.50  
14X  
1.18  
1
1.27  
PITCH  
14X  
0.58  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and the  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed  
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation  
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets  
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,  
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which  
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or  
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable  
copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MC74HC125A/D  

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Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130_11

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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VISHAY