NOA1211CUTAG [ONSEMI]
Ambient Light Sensor with Dark Current Compensation;
| 型号： | NOA1211CUTAG |
| 厂家： | 
ONSEMI |
| 描述： | Ambient Light Sensor with Dark Current Compensation |
| 文件： | 总9页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDD
GB2ꢀGB1
NOA1211
Ambient Light Sensor with
Dark Current Compensation
Description
The NOA1211 is a very low power ambient light sensor (ALS) with
an analog current output and a power down mode to conserve power.
Designed primarily for handheld device applications, the active power
dissipation of this chip is less than 8 mA at dark and its quiescent
current consumption is less than 200 pA in power down mode. The
device can operate over a very wide range of voltages from 2 V to
5.5 V. The NOA1211 employs proprietary CMOS image sensing
technology from ON Semiconductor, including built−in dynamic dark
current compensation to provide large signal to noise ratio (SNR) and
wide dynamic range (DR) over the entire operating temperature range.
The photopic optical filter provides a light response similar to that of
the human eye. Together the photopic light response and dark current
compensation insures accurate light level detection.
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CUDFN6
CU SUFFIX
CASE 505AE
PIN ASSIGNMENT
Features
VDD
VSS
GB1
1
2
3
6
IOUT
NC
• Senses Ambient Light and Provides an Output Current Proportional
to the Ambient Light Intensity
5
4
• Photopic Spectral Response
• Dynamic Dark Current Compensation
GB2
• Two Selectable Output Current Gain Modes
• Power Down Mode
(Top View)
• Less than 18 mA at 100 lux Active Power Consumption in Normal
Operation (Less than 8 mA at Dark)
ORDERING INFORMATION
†
• Less than 200 pA Quiescent Power Dissipation in Power Down
Mode at All Light Levels
• Linear Response Over the Full Operating Range
Device
Package
Shipping
2500 /
Tape & Reel
NOA1211CUTAG* CUDFN6
(Pb−Free)
• Senses Intensity of Ambient Light from ~0 lux to Over 100,000 lux
• Wide Operating Voltage Range (2 V to 5.5 V)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
• Wide Operating Temperature Range (−40°C to 85°C)
• Drop−in Replacement Device in 1.6 x 1.6 mm Package
*Temperature Range: −40°C to 85°C.
• These Devices are Pb−Free, Halogen Free/BFR Free
Vin = 2 to 5.5V
and are RoHS Compliant
PDB
C1
1m
Applications
hn
• Saves display power in applications such as:
♦ Cell Phones, PDAs, MP3 players, GPS
♦ Cameras, Video Recorders
Photo
Diode
Amp
ADC
IOUT
♦ Mobile Devices with Displays or Backlit Keypads
♦ Laptops, Notebooks, Digital Signage
♦ LCD TVs and Monitors, Digital Picture Frames
RL
CL
IC2
VSS
NOA1211
IC1
♦ Automobile Dashboard Displays and Infotainment
♦ LED Indoor/Outdoor Residential and Street Lights
Figure 1. Typical Application Circuit
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
March, 2011 − Rev. 0
NOA1211/D
NOA1211
PDB
‘0’
GB2 GB1
VOUT
Amp
IOUT
n
h
RL
Photo
Diode
Reference
Diode
Figure 2. Simplified Block Diagram Configured for M−Gain and Power−Down
Table 1. PIN FUNCTION DESCRIPTION
Pin
1
Pin Name
VDD
VSS
Description
Power pin.
2
Ground pin.
3
GB1
In conjunction with GB2, selects between two gain modes and power down.
In conjunction with GB1, selects between two gain modes and power down.
Not connected. This may be connected to ground or left floating.
Analog current output.
4
GB2
5
NC
6
IOUT
VSS
EP
Exposed pad, internally connected to ground. Should be connected to ground.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Input power supply
V
DD
6
Input voltage range
V
IN
−0.3 to V + 0.3
V
DD
Output voltage range
V
OUT
−0.3 to V + 0.2
V
DD
Output current range
I
0 to 15
−40 to 85
−40 to 85
2
mA
°C
°C
kV
V
o
Maximum Junction Temperature
Storage Temperature
T
J(max)
T
STG
ESD Capability, Human Body Model (Note 1)
ESD Capability, Charged Device Model (Note 1)
ESD Capability, Machine Model (Note 1)
Moisture Sensitivity Level
ESD
ESD
HBM
750
CDM
ESD
150
V
MM
MSL
5
−
Lead Temperature Soldering (Note 2)
T
260
°C
SLD
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Charged Device Model tested per ESD−STM5.3.1−1999
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating: v 100 mA per JEDEC standard: JESD78
2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
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2
NOA1211
Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise specified, these specifications apply over VDD = 5.5 V, −40°C <
T < 85°C)
A
Rating
Test Conditions
Symbol
Min
2
Typ
3.0
8
Max
5.5
Unit
V
Power supply voltage
V
DD
Power supply current
V
V
= 3.0 V, Ev = 0 lux, M−Gain
= 3.0 V, Ev = 100 lux, M−Gain
I
6
12
mA
mA
nA
mA
mA
nA
nm
DD
DD_0
Power supply current
I
13
14
18
DD
DD_100
Power down current
All light levels
I
0.2
5.2
0.52
1
5
DD_PD
Output current, medium−gain
Output current, low−gain
Dark output current, medium−gain
Wavelength of maximum response
Ev = 100 lux, white LED
Ev = 100 lux, white LED
I
2.66
7.98
0.798
o_med
I
0.266
o_low
V
DD
= 3.0 V, Ev = 0 lux
I
o_dark
l
540
1.0
m
White LED/fluorescent current
ratio
Ev = 100 lux
Ev = 100 lux
r
LF
Incandescent/fluorescent current
ratio
r
IF
1.45
Maximum output voltage
Power down time
Ev = 100 lux, R = 220 kW, M−Gain
V
V
–0.4
V –0.1
DD
V
DD
V
ms
ms
V
L
OMAX
DD
Ev = 100 lux, M−Gain to PD
Ev = 100 lux, PD to M−Gain
t
1.5
PD
Wake up time
t
wu
300
Low level input voltage
V
IL
−0.2
0.25
V
DD
High level input voltage
V
IH
0.75
VDD
V
DD
0.2
+
V
Operating free−air temperature
range
T
A
−40
85
°C
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3
NOA1211
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
ALS
Human Eye
Fluorescent
(5000K)
White LED
(5600K)
Fluorescent
(2700K)
Incandescent
(2850K)
200 300
400
500
600
700
800
900 1000
0
0.5
1
1.5
2
WAVELENGTH (nm)
Ratio
Figure 3. Spectral Response (Normalized)
Figure 4. Light Source Dependency (Normalized to
Flouroscent Light, Medium Gain Mode)
10000
1000
100
10000
V
DD
= 3.3 V
No Load
1 kW Load
10 kW Load
100 kW Load
1000
10
1
100
10
0.1
0.01
0.001
0.0001
0.00001
Medium Gain
Low Gain
V
DD
= 3.3 V
1
0.01 0.1
1
10
100 1000 10000100000 1000000
Ev (lux)
1
10
100
1000
Ev (lux)
10000 100000
Figure 5. Output Current vs. Ev
Figure 6. Output Current vs. Ev (Medium Gain)
60
50
40
30
20
6
White LED (5600K)
White LED (5600K)
5
4
3
2
10
0
1
0
0
200
400
600
Ev (lux)
800
1000
0
20
40
60
80
100
Ev (lux)
Figure 7. Output Current vs. Ev, 0−1000 lux
Figure 8. Output Current vs. Ev, 0−100 lux
(Medium Gain Mode)
(Medium Gain Mode)
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4
NOA1211
TYPICAL CHARACTERISTICS
0
0
−10
1.0
10
−10
1.0
10
−20
20
−20
20
−30
−40
−50
30
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
−30
30
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
40
−40
40
50
−50
−60
−70
−80
50
−60
60
70
80
60
70
80
−70
−80
−90
90
−90
90
−100
100
−100
100
Q
−110
−120
−130
−140
110
120
130
140
Q
−110
−120
−130
−140
110
120
130
140
SIDE VIEW
END VIEW
o
−90
90o
o
−90
90o
1
2
3
6
−150
150
5
4
−160
160
−170
170
−150
150
180
−160
160
TOP VIEW
−170
170
TOP VIEW
180
Figure 9. Output Current vs. Angle (End View,
Normalized, Medium Gain Mode)
Figure 10. Output Current vs. Angle (End View,
Normalized, Medium Gain Mode)
0.7
0.6
0.5
0.4
0.3
0.2
1.6
1.4
1.2
1.0
V
DD
= 3.3 V
V
DD
= 3.3 V
0.8
0.6
0.4
0.2
0.0
0.1
0.0
Medium Gain Mode
Low Gain Mode
−60 −40
−20
0
20
40
60
80
100
−60 −40
−20
0
20
40
60
80
100
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Output Current at 0 lux vs.
Temperature (Medium Gain)
Figure 12. Output Current at 100 lux vs.
Temperature (Medium Gain)
10
9
8
7
6
5
4
3
2
1
0
20
18
16
14
12
10
8
V
= 3.3 V
V
DD
= 3.3 V
DD
6
4
2
0
−60 −40
−20
0
20
40
60
80
100
−60 −40
−20
0
20
40
60
80
100
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 13. Supply Current at 0 lux vs.
Temperature (Medium Gain)
Figure 14. Supply Current at 100 lux vs.
Temperature (Medium Gain)
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NOA1211
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
White LED (5600K)
70
60
50
40
30
20
0.2
0.0
10
0
0
1
2
3
4
5
6
0
200
400
600
800
1000
V
DD
(V)
Lux (Ev)
Figure 15. Output Current at 100 lux vs. Supply
Voltage (Medium Gain)
Figure 16. Supply Current vs. Ev (Medium Gain)
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
V
DD
(V)
Figure 17. Supply Current vs. Supply Voltage
(Medium Gain)
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6
NOA1211
DESCRIPTION OF OPERATION
Ambient Light Sensor Architecture
transmits photons in the visible spectrum which are
primarily detected by the human eye and exhibits excellent
IR rejection. The photo response of this sensor is as shown
in Figure 3.
The ambient light signal detected by the photo diode is
converted to an analog output current by an amplifier with
programmable gain. Table 4 shows the gain setting and the
corresponding light sensitivity.
The NOA1211 employs a sensitive photo diode fabricated
in ON Semiconductor’s standard CMOS process
technology. The major components of this sensor are as
shown in Figure 2 . The photons which are to be detected
pass through an ON Semiconductor proprietary color filter
limiting extraneous photons and thus performing as a band
pass filter on the incident wave front. The filter only
Table 4. PROGRAMMABLE GAIN SETTINGS
GB2
GB1
Mode
Output Current @ 100 lux
Output Current @ 1000 lux
Saturation
−
0
1
1
0
0
1
Power Down
Medium Gain
Low Gain
−
−
5.2 mA
0.52 mA
52 mA
5.26 mA
~100,000 lux
> 100,000 lux
Power Down Mode
maximum desired E as shown in Equation 3. Equation 4
V
This device can be placed in a power down mode by
setting GB1 and GB2 to logic low level.
In order for proper operation of this mode GB1 and GB2
should stay low 1.5 ms.
computes the value for R (Medium−Gain mode).
L
ǒ
Ǔ
(eq. 3)
(eq. 4)
VOMAX + 5.2 mAń100 lux * EVMAX * RL
ǒ
Ǔ
ǒ
Ǔ
RL + VDD * 0.4 V ńEVMAX * 100 luxń5.2 mA
For example, consider a 5 V supply with a desired E
External Component Selection
VMAX
= 1000 lux, the value of R would be 88.5 kW. The value for
The NOA1211 outputs a current in direct response to the
incident illumination. In many applications it is desirable to
convert the output current into voltage. It may also be
desirable to filter the effects of 50/60 Hz flicker or other light
source transients.
L
R
L
can easily be computed for different NOA1211 gain
ranges by substituting the appropriate output current at
100 lux from Table 4.
The optional capacitor C can be used to form a low−pass
L
filter to remove 50/60 Hz filter or other unwanted noise
sources as computed with Equation 5.
Conversion from current to voltage may be accomplished
by adding load resistor R to the output. The value of R is
L
L
bounded on the high side by the potential output saturation
CL + 1ń2pfcRL
(eq. 5)
of the amplifier at high ambient light levels. R is bounded
L
For our example, to filter out 60Hz flicker the value of C
would be 30 nF.
L
on the low side by the output current limiting of the internal
amplifier and to minimize power consumption.
Equation 1 describes the relationship of light input to
current output for the Medium−Gain mode.
Power Supply Bypassing and Printed Circuit Board
Design
Power supply bypass and decoupling can typically be
handled with a low cost 0.1 mF to 1.0 mF capacitor.
The exposed pad on the bottom of the package is internally
connected to VSS pin 2 and should be soldered to the printed
circuit board.
ǒ
Ǔ
(eq. 1)
IOUT + 5.2 mAń100 lux * EV
By adding R to the output, I
voltage according to Equation 2.
is converted into a
L
OUT
ǒ
Ǔ
(eq. 2)
VOUT + IOUT * RL + 5.2 mAń100 lux * EV * RL
The range of the output voltage is limited by the output
stage to the V parameter value of V – 0.4 V at the
OMAX
DD
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7
NOA1211
PACKAGE DIMENSIONS
CUDFN6, 1.6x1.6
CASE 505AE−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND
IS MEASURED BETWEEN 0.15 AND 0.30mm FROM
THE TERMINAL TIP.
2X
0.10 C
D
A B
6
1
4
3
2X
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS
WELL AS THE TERMINALS.
q
0.10
C
d
MILLIMETERS
E
DIM
A
MIN
0.55
0.00
MAX
0.65
0.05
A
A1
A3
b
0.20 REF
0.15
0.25
A1
1.60 BSC
D
TOP VIEW
---
1.00
0.10
1.20
d
DETAIL A
D2
E
1.60 BSC
DETAIL A
0.40
0.60
E2
e
0.08
C
0.50 BSC
A3
0.20
---
K
L
0.25
5
0.35
5
q
4
10
0.05
C
SEATING
PLANE
NOTE 4
C
END VIEW
SIDE VIEW
D2
MOUNTING FOOTPRINT
6X
1.20
0.52
M
0.10
C A B
1
3
0.60
1.90
E2
K
M
0.10
C A B
6
4
1
6X
b
6X
6X
L
0.25
0.10 M
C
C
A
B
0.50
e
PITCH
M
NOTE 3
0.05
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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