NP1800SDMCT3G [ONSEMI]
High Current TSPD; 高电流TSPD
| 型号： | NP1800SDMCT3G |
| 厂家： | 
ONSEMI |
| 描述： | High Current TSPD |
| 文件： | 总6页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NP-SDMC Series
High Current TSPD
The NP−SDMC series of High Current Thyristor Surge Protection
Devices (TSPD) protect sensitive electronic equipment from transient
overvoltage conditions. The high current withstand of these devices
offer protection in extreme environments and provide a solution for
GR−1089 balanced “Y” configurations.
The NP−SDMC Series helps designers to comply with the various
regulatory standards and recommendations including:
GR−1089−CORE,IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,
TIA−968−A,FCC Part 68, EN 60950, UL 1950.
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HIGH CURRENT (200A)
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
Features
• Low Leakage (Transparent)
• High Surge Current Capabilities
• Precise Turn on Voltages
• These are Pb−Free Devices
T
R
Typical Applications
• Central Office
• Rugged Modems
• Bottom Element in “Y” Configurations
SMB
JEDEC DO−214AA
CASE 403C
ELECTRICAL CHARACTERISTICS
C , 2 V,
1 MHz
C , 50 V,
1 MHz
O
O
MARKING DIAGRAM
V
DRM
V
(BO)
V
V
pF (Max)
pF (Max)
Device
AYWW
xxxDMG
G
NP0720SDMCT3G
NP1300SDMCT3G
NP1500SDMCT3G
NP1800SDMCT3G
NP3100SDMCT3G
65
88
65
65
65
65
65
30
30
30
30
30
120
140
170
275
160
180
220
350
A
Y
WW
xxx
= Assembly Location
= Year
= Work Week
= Specific Device Code
(NPxxx0SDMC)
= Pb−Free Package
G in part number indicates RoHS compliance
Other protection voltages are available upon request
Symmetrical Protection − Values the same in both negative and positive excursions
(See V−I Curve on page 3)
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
NPxxxxSDMCT3G
SMB
(Pb−Free)
2500 Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 0
NP3100SD/D
NP−SDMC Series
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
V
Rating
Value
$65
$120
$140
$170
$275
1000
200
Unit
Repetitive peak off−state voltage: Rated maximum
(peak) continuous voltage that may be applied in the
off−state conditions including all dc and repetitive
alternating voltage components.
NP0720SDMCT3G
V
DRM
NP1300SDMCT3G
NP1500SDMCT3G
NP1800SDMCT3G
NP3100SDMCT3G
I
Nonrepetitive peak pulse current: Rated maximum
value of peak impulse pulse current that may be
applied.
A
A
2x10 ms, GR−1089−CORE
10x1000 ms, GR−1089−CORE
0.0167s, 50/60 Hz, full sine wave
0.1s, 50/60 Hz, full sine wave
1000s, 50/60 Hz, full sine wave
PPS
I
Non−repetitive peak on−state current: Rated
maximum (peak) value of ac power frequency
on−state surge current which may be applied for a
specified time or number of ac cycles.
60
TSM
30
2.2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS TABLE (T = 25°C unless otherwise noted)
A
Symbol
Rating
Min Typ Max
Unit
V
(BO)
Breakover voltage: The maximum voltage across the device in or at the NP0720SDMCT3G
breakdown region.
DC
$88
V
NP1300SDMCT3G
NP1500SDMCT3G
NP1800SDMCT3G
NP3100SDMCT3G
$160
V
= 1000 V, dv/dt = 100 V/ms
$180
$220
$350
I
Breakover Current: The instantaneous current flowing at the breakover voltage.
800
mA
mA
mA
(BO)
I
H
Holding Current: The minimum current required to maintain the device in the on−state.
150
I
Off−state Current: The dc value of current that results from the applica-
tion of the off−state voltage
V
= 50 V
2
DRM
D
D
V
= V
5
DRM
V
T
On−state Voltage: The voltage across the device in the on−state condition.
I = 2.2 A (pk), PW = 300 ms, DC = 2%
4
V
T
dv/dt
di/dt
Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below V
will not cause switching from the off−state to the on−state.
) that
5
kV/ms
DRM
Linear Ramp between 0.1 V
and 0.9 V
DRM
DRM
Critical rate of rise of on−state current: rated value of the rate of rise of current which the device
can withstand without damage.
500
65
A/ms
C
Off−state Capacitance
pF
O
f = 1.0 MHz, V = 1.0 V
, V = −2 Vdc
D
d
RMS
THERMAL CHARACTERISTICS
Symbol
Rating
Value
−65 to +150
−40 to +150
90
Unit
T
Storage Temperature Range
Operating Temperature Range
°C
°C
STG
T
J
R
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
°C/W
0JA
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2
NP−SDMC Series
+I
ELECTRICAL PARAMETER/RATINGS DEFINITIONS
Symbol
Parameter
I
PPS
V
Repetitive Peak Off−state Voltage
Breakover Voltage
DRM
I
TSM
V
I
(BO)
I
(BO)
I
T
Off−state Current
V
T
DRM
I
I
H
V
Off−State Region
(BO)
I
Breakover Current
(BO)
D
V
DRM
I
H
Holding Current
−Voltage
+Voltage
V
T
On−state Voltage
V
D
I
DRM
I
T
On−state Current
I
Nonrepetitive Peak On−state Current
Nonrepetitive Peak Impulse Current
Off−state Voltage
TSM
I
PPS
V
D
I
D
Off−state Current
−I
Figure 1. Voltage Current Characteristics of TSPD
100
10
1
t = rise time to peak value
t = decay time to half value
f
r
Peak
Value
100
Half Value
50
0
0t
r
t
f
0.1
1
10
100
1000
CURRENT DURATION (s)
TIME (ms)
Figure 2. Nonrepetitive On−State Current vs. Time
Figure 3. Nonrepetitive On−State Impulse vs.
Waveform (IPPS
(ITSM
)
)
Detailed Operating Description
The TSPD or Thyristor Surge Protection Device are
specialized silicon based overvoltage protectors, used to
protect sensitive electronic circuits from damaging
overvoltage transient surges caused by induced lightning
and powercross conditions.
The TSPD protects by switching to a low on state voltage
when the specified protection voltage is exceeded. This is
known as a “crowbar” effect. When an overvoltage occurs,
the crowbar device changes from a high−impedance to a
low−impedance state. This low−impedance state then offers
a path to ground, shunting unwanted surges away from the
sensitive circuits.
This crowbar action defines the TSPD’s two states of
functionality: Open Circuit and Short Circuit.
Open Circuit – The TSPD must remain transparent during
normal circuit operation. The device looks like an open
across the two wire line.
Short Circuit – When a transient surge fault exceeds the
TSPD protection voltage threshold, the devices switches on,
and shorts the transient to ground, safely protecting the
circuit.
I
(OP)
+
+
STSPD looks like an open
SCircuit operates normally
Protected
V
−
TSPD
(OP)
Equipment
−
Normal Circuit Operation
SFault voltage greater than V occurs
bo
I
(Fault)
STSPD shorts fault to ground
SAfter short duration events the O/V
switches back to an open condition
SWorst case (Fail/Safe)
+
+
I
Protected
(Fault)
V
TSPD
(Fault)
Equipment
−
−
SO/V permanent short
SEquipment protected
Operation during a Fault
Figure 4. Normal and Fault Conditions
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3
NP−SDMC Series
The electrical characteristics of the TSPD help the user to
define the protection threshold for the circuit. During the
open circuit condition the device must remain transparent;
TSPD’s are useful in helping designers meet safety and
regulatory standards in Telecom equipment including
GR−1089−CORE,ITU−K.20, ITU−K.21, ITU−K.45, FCC
Part 68, UL1950, and EN 60950.
this is defined by the I
. The I
should be as low as
DRM
DRM
possible. The typical value is less than 5 mA.
The circuit operating voltage and protection voltage must
be understood and considered during circuit design. The
ON Semiconductor offers a full range of these products in
the NP series product line.
DEVICE SELECTION
When selecting a TSPD use the following key selection
parameters.
V
(BO)
is the guaranteed maximum voltage that the protected
circuit will see, this is also known as the protection voltage.
The V is the guaranteed maximum voltage that will
DRM
keep the TSPD in its normal open circuit state. The TSPD
is typically a 20−30% higher than the V . Based
Off−State Voltage VDRM
V
(BO)
DRM
Choose a TSPD that has an Off−State Voltage greater than
the normal system operating voltage. The protector should
not operate under these conditions:
Example:
on these characteristics it is critical to choose devices which
have a V higher than the normal circuit operating
DRM
voltage, and a V
which is less than the failure threshold
(BO)
of the protected equipment circuit. A low on−state voltage
Vbat = 48 Vmax
V allows the TSPD to conduct large amounts of surge
t
Vring = 150 Vrms = 150*1.414 = 212 V peak
current (500 A) in a small package size.
Once a transient surge has passed and the operating
voltage and currents have dropped to their normal level the
TSPD changes back to its open circuit state.
V
should be greater than the peak value of these two
DRM
components:
VDRM > 212 + 48 = 260 VDRM
Transient Surge
Breakover Voltage V(BO)
Verify that the TSPD Breakover Voltage is a value less
than the peak voltage rating of the circuit it is protecting.
Example: Relay breakdown voltage, SLIC maximum
voltage, or coupling capacitor maximum rated voltage.
Equipment Failure Threshold
TSPD Protection Voltage
Upper Limit
Peak Pulse Current Ipps
Choose a Peak Pulse current value which will exceed the
anticipated surge currents in testing.
Normal System
Operating Voltage
Hold Current (IH)
TSPD Transparent
(open)
TSPD Protection
(short)
TSPD Transparent
(open)
The Hold Current must be greater than the maximum
system generated current. If it is not then the TSPD will
remain in a shorted condition, even after a transient event
has passed.
Time
Figure 5. Protection During a Transient Surge
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4
NP−SDMC Series
TYPICAL APPLICATION
Tip
Testing:
Tip − Ground
Ring − Ground
Tip and Ring to Ground Simultaneously
Surge
Waveforms
Ring
NP3100SCMC
NP3100SCMC
NP3100SDMC
200A
Figure 6.
• 200 A 10 x 1000 ms Needed for GR−1089
• Bottom Element in “Y” Configuration
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5
NP−SDMC Series
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.06
3.30
1.90
1.96
MAX
4.57
3.81
2.41
2.11
0.152
0.30
1.27
D
B
A
B
C
D
H
J
0.160
0.130
0.075
0.077
0.180
0.150
0.095
0.083
0.0020 0.0060 0.051
0.006
0.030
0.012
0.050
0.15
0.76
K
P
S
0.020 REF
0.51 REF
0.205
0.220
5.21
5.59
C
H
J
K
P
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NP3100SD/D
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