NP3500SAMCT3G [ONSEMI]
50A, Ultra Low Capacitance TSPD; 50A ，超低电容TSPD
| 型号： | NP3500SAMCT3G |
| 厂家： | 
ONSEMI |
| 描述： | 50A, Ultra Low Capacitance TSPD |
| 文件： | 总7页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NP-SAMC Series
Product Preview
50A, Ultra Low Capacitance
TSPD
The NP−SAMC series of Low Capacitance Thyristor Surge
Protection Devices (TSPD) protect sensitive electronic equipment
from transient overvoltage conditions. Due to their ultra low off−state
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capacitance (C ), they offer minimal signal distortion for high speed
o
equipment such as DSL and T1/E1 circuits. The low nominal offstate
capacitance translates into the extremely low differential capacitance
offering superb linearity with applied voltage or frequency.
The NP−SAMC Series helps designers to comply with the various
regulatory standards and recommendations including:
GR−1089−CORE,IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,
TIA−968−A, FCC Part 68, EN 60950, UL 1950.
ULTRA LOW CAPACITANCE
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
50A, 10x1000ms SURGE
Features
• Ultra Low − Micro Capacitance
• Low Leakage (Transparent)
• High Surge Current Capabilities
• Precise Turn on Voltages
T
R
• Low Voltage Overshoot
• These are Pb−Free Devices
Typical Applications
SMB
JEDEC DO−214AA
CASE 403C
• xDSL Central Office and Customer Premise
• T1/E1
• Other Broadband High Speed Data Transmission Equipment
ELECTRICAL CHARACTERISTICS
MARKING DIAGRAM
C , 2 V,
1 MHz
C , 50 V,
1 MHz
O
O
AYWW
xxxAMG
G
V
V
(BO)
DRM
V
V
pF (Max)
18
pF (Max)
Device
NP0640SAMCT3G
NP0720SAMCT3G
NP0900SAMCT3G
NP1100SAMCT3G
NP1300SAMCT3G
NP1500SAMCT3G
NP1800SAMCT3G
NP2100SAMCT3G
NP2300SAMCT3G
NP2600SAMCT3G
NP3100SAMCT3G
NP3500SAMCT3G
"58
"65
"77
"88
8
8
8
8
8
8
8
8
8
8
8
8
A
Y
WW
xxx
= Assembly Location
= Year
= Work Week
= Specific Device Code
(NPxxx0SAMC)
= Pb−Free Package
18
"75
"98
18
"90
"130
"160
"180
"220
"240
"260
"300
"350
"400
18
"120
"140
"170
"180
"190
"220
"275
"320
18
G
(Note: Microdot may be in either location)
18
18
ORDERING INFORMATION
18
†
18
Device
Package
Shipping
18
NPxxx0SAMCT3G
SMB
(Pb−Free)
2500 Tape &
Reel
18
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
18
G in part number indicates RoHS compliance
Other protection voltages are available upon request
Symmetrical Protection − Values the same in both negative and positive
excursions
(See V−I Curve on page 3)
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
May, 2009 − Rev. P2
NP0640SA/D
NP−SAMC Series
SURGE RATINGS
I
I
TSM
PPS
A
A
di/dt
Waveform (ms)
2x10
150
8x20
150
10x160
90
10x560
10x360
75
10x1000
50
5x310
75
0.1 s
A/ms
60 Hz
Value
50
20
500
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
V
Rating
Value
Unit
Repetitive peak off−state voltage: Rated maximum
(peak) continuous voltage that may be applied in the
off−state conditions including all dc and repetitive
alternating voltage components.
NP0640SAMCT3G
NP0720SAMCT3G
NP0900SAMCT3G
NP1100SAMCT3G
NP1300SAMCT3G
NP1500SAMCT3G
NP1800SAMCT3G
NP2100SAMCT3G
NP2300SAMCT3G
NP2600SAMCT3G
NP3100SAMCT3G
NP3500SAMCT3G
2x10 ms, GR−1089−CORE
8x20 ms, IEC−61000−4−5
10x160 ms, TIA−968−A
10x560 ms, TIA−968−A
$58
$65
$75
$90
$120
$140
$170
$180
$190
$220
$275
$320
150
V
DRM
I
Nonrepetitive peak pulse current: Rated maximum
value of peak impulse pulse current that may be
applied.
A
PPS
150
90
50
10x360 ms, GR−1089−CORE
10x1000 ms, GR−1089−CORE
5x310 ms, ITU−K.20/K.21/K.45
0.1s, 50/60 Hz, full sine wave
75
50
75
I
Nonrepetitive peak on−state current: Rated
maximum (peak) value of ac power frequency
on−state surge current which may be applied for a
specified time or number of ac cycles.
20
A
TSM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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2
NP−SAMC Series
ELECTRICAL CHARACTERISTICS TABLE (T = 25°C unless otherwise noted)
A
Symbol
Rating
Min Typ Max
$77
Unit
V
(BO)
Breakover voltage: The maximum voltage across the device in or at the NP0640SAMCT3G
breakdown region.
V
NP0720SAMCT3G
NP0900SAMCT3G
NP1100SAMCT3G
NP1300SAMCT3G
NP1500SAMCT3G
NP1800SAMCT3G
NP2100SAMCT3G
NP2300SAMCT3G
NP2600SAMCT3G
NP3100SAMCT3G
NP3500SAMCT3G
$88
VDC = 1000 V, dv/dt = 100 V/ms
$98
$130
$160
$180
$220
$240
$260
$300
$350
$400
800
I
Breakover Current: The instantaneous current flowing at the breakover voltage.
mA
mA
mA
(BO)
I
H
Holding Current: The minimum current required to maintain the device in the on−state.
150
I
Off−state Current: The dc value of current that results from the applica-
tion of the off−state voltage
V
D
V
D
= 50 V
2
DRM
= V
5
DRM
V
T
On−state Voltage: The voltage across the device in the on−state condition.
I = 2.2 A (pk), PW = 300 ms, DC = 2%
4
V
T
dv/dt
di/dt
Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below V
will not cause switching from the off−state to the on−state.
) that
5
kV/ms
DRM
Linear Ramp between 0.1 V
and 0.9 V
DRM
DRM
Critical rate of rise of on−state current: rated value of the rate of rise of current which the device
can withstand without damage.
500
A/ms
C
O
Off−state Capacitance
f = 1.0 MHz, V = 1.0 V
NP0640SAMCT3G
NP0720SAMCT3G
NP0900SAMCT3G
NP1100SAMCT3G
NP1300SAMCT3G
NP1500SAMCT3G
NP1800SAMCT3G
NP2100SAMCT3G
NP2300SAMCT3G
NP2600SAMCT3G
NP3100SAMCT3G
NP3500SAMCT3G
18
18
18
18
18
18
18
18
18
18
18
18
pF
, V = −2 Vdc
d
RMS
D
THERMAL CHARACTERISTICS
Symbol
Rating
Value
−65 to +150
−40 to +150
90
Unit
T
Storage Temperature Range
Junction Temperature
°C
°C
STG
T
J
R
0JA
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
°C/W
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3
NP−SAMC Series
ELECTRICAL PARAMETER/RATINGS DEFINITIONS
+I
Symbol
Parameter
I
PPS
V
Repetitive Peak Off−state Voltage
Breakover Voltage
I
DRM
TSM
V
(BO)
I
T
I
Off−state Current
V
T
DRM
I
H
Off−State Region
I
Breakover Current
(BO)
I
(BO)
−Voltage
I
D
+Voltage
I
H
Holding Current
I
DRM
V
On−state Voltage
T
V
(BO)
V
D
I
T
On−state Current
V
DRM
I
Nonrepetitive Peak On−state Current
Nonrepetitive Peak Impulse Current
Off−state Voltage
TSM
I
PPS
V
D
I
D
Off−state Current
−I
Figure 1. Voltage Current Characteristics of TSPD
100
10
1
t = rise time to peak value
t = decay time to half value
f
r
Peak
Value
100
Half Value
50
0
0t
r
t
f
0.1
1
10
100
1000
CURRENT DURATION (s)
TIME (ms)
Figure 2. Nonrepetitive On−State Current vs. Time
Figure 3. Nonrepetitive On−State Impulse vs.
Waveform (IPPS
(ITSM
)
)
Detailed Operating Description
The TSPD or Thyristor Surge Protection Device are
specialized silicon based overvoltage protectors, used to
protect sensitive electronic circuits from damaging
overvoltage transient surges caused by induced lightning
and powercross conditions.
The TSPD protects by switching to a low on state voltage
when the specified protection voltage is exceeded. This is
known as a “crowbar” effect. When an overvoltage occurs,
the crowbar device changes from a high−impedance to a
low−impedance state. This low−impedance state then offers
a path to ground, shunting unwanted surges away from the
sensitive circuits.
This crowbar action defines the TSPD’s two states of
functionality: Open Circuit and Short Circuit.
Open Circuit – The TSPD must remain transparent during
normal circuit operation. The device looks like an open
across the two wire line.
Short Circuit – When a transient surge fault exceeds the
TSPD protection voltage threshold, the devices switches on,
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4
NP−SAMC Series
and shorts the transient to ground, safely protecting the
circuit.
TSPD’s are useful in helping designers meet safety and
regulatory standards in Telecom equipment including
GR−1089−CORE,ITU−K.20, ITU−K.21, ITU−K.45, FCC
Part 68, UL1950, and EN 60950.
ON Semiconductor offers a full range of these products in
the NP series product line.
I
(OP)
+
+
•TSPD looks like an open
•Circuit operates normally
Protected
V
−
TSPD
(OP)
Equipment
−
Normal Circuit Operation
DEVICE SELECTION
When selecting a TSPD use the following key selection
parameters.
•Fault voltage greater than V occurs
•TSPD shorts fault to ground
•After short duration events the O/V
switches back to an open condition
bo
I
(Fault)
+
+
Off−State Voltage VDRM
I
Protected
(Fault)
V
TSPD
(Fault)
Choose a TSPD that has an Off−State Voltage greater than
the normal system operating voltage. The protector should
not operate under these conditions:
Example:
Equipment •Worst case (Fail/Safe)
−
−
•O/V permanent short
•Equipment protected
Operation during a Fault
Figure 4. Normal and Fault Conditions
Vbat = 48 Vmax
Vring = 150 Vrms = 150*1.414 = 212 V peak
The electrical characteristics of the TSPD help the user to
define the protection threshold for the circuit. During the
open circuit condition the device must remain transparent;
V
should be greater than the peak value of these two
DRM
components:
this is defined by the I
. The I
should be as low as
VDRM > 212 + 48 = 260 VDRM
DRM
DRM
possible. The typical value is less than 5 mA.
The circuit operating voltage and protection voltage must
be understood and considered during circuit design. The
Breakover Voltage V(BO)
Verify that the TSPD Breakover Voltage is a value less
than the peak voltage rating of the circuit it is protecting.
Example: Relay breakdown voltage, SLIC maximum
voltage, or coupling capacitor maximum rated voltage.
V
(BO)
is the guaranteed maximum voltage that the protected
circuit will see, this is also known as the protection voltage.
The V is the guaranteed maximum voltage that will
DRM
keep the TSPD in its normal open circuit state. The TSPD
is typically a 20−30% higher than the V . Based
Peak Pulse Current Ipps
V
(BO)
DRM
Choose a Peak Pulse current value which will exceed the
anticipated surge currents in testing. In some cases the 100 A
“C” series device may be needed when little or no series
resistance is used. When a series current limiter is used in the
circuit a lower current level of “A” or “B” may be used. To
determine the peak current divide the maximum surge
current by the series resistance.
on these characteristics it is critical to choose devices which
have a V higher than the normal circuit operating
DRM
voltage, and a V
which is less than the failure threshold
(BO)
of the protected equipment circuit. A low on−state voltage
V allows the TSPD to conduct large amounts of surge
t
current (500 A) in a small package size.
Once a transient surge has passed and the operating
voltage and currents have dropped to their normal level the
TSPD changes back to its open circuit state.
Hold Current (IH)
The Hold Current must be greater than the maximum
system generated current. If it is not then the TSPD will
remain in a shorted condition, even after a transient event
has passed.
Transient Surge
Equipment Failure Threshold
TSPD Protection Voltage
Upper Limit
Normal System
Operating Voltage
TSPD Transparent
(open)
TSPD Protection
(short)
TSPD Transparent
(open)
Time
Figure 5. Protection During a Transient Surge
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5
NP−SAMC Series
TYPICAL APPLICATIONS
Tip
NP3100SAMC
Voice
DSL
NP3100SAMC
Ring
Figure 6. ADSL
NP1800SAMC
NP1800SAMC
NP0640SAMC
NP0640SAMC
TX
POWER
RX
NP1800SAMC
NP1800SAMC
NP0640SAMC
NP0640SAMC
Figure 7. T1/E1
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6
NP−SAMC Series
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.06
3.30
1.90
1.96
MAX
4.57
3.81
2.41
2.11
0.152
0.30
1.27
D
B
A
B
C
D
H
J
0.160
0.130
0.075
0.077
0.180
0.150
0.095
0.083
0.0020 0.0060 0.051
0.006
0.030
0.012
0.050
0.15
0.76
K
P
S
0.020 REF
0.51 REF
0.205
0.220
5.21
5.59
C
H
J
K
P
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury
or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an
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NP0640SC/D
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